KR101888604B1 - 발광 소자 및 발광 소자 패키지 - Google Patents

발광 소자 및 발광 소자 패키지 Download PDF

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Publication number
KR101888604B1
KR101888604B1 KR1020110111308A KR20110111308A KR101888604B1 KR 101888604 B1 KR101888604 B1 KR 101888604B1 KR 1020110111308 A KR1020110111308 A KR 1020110111308A KR 20110111308 A KR20110111308 A KR 20110111308A KR 101888604 B1 KR101888604 B1 KR 101888604B1
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KR
South Korea
Prior art keywords
light emitting
layer
disposed
bragg reflection
electrode
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Expired - Fee Related
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KR1020110111308A
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English (en)
Korean (ko)
Other versions
KR20130046754A (ko
Inventor
김성균
주현승
홍기석
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엘지이노텍 주식회사
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Publication date
Priority to KR1020110111308A priority Critical patent/KR101888604B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to EP12190234.0A priority patent/EP2587542B1/en
Priority to JP2012237130A priority patent/JP6133040B2/ja
Priority to US13/662,348 priority patent/US9165977B2/en
Priority to TW101139757A priority patent/TWI575775B/zh
Priority to CN201210421187.3A priority patent/CN103094435B/zh
Publication of KR20130046754A publication Critical patent/KR20130046754A/ko
Application granted granted Critical
Publication of KR101888604B1 publication Critical patent/KR101888604B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020110111308A 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지 Expired - Fee Related KR101888604B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020110111308A KR101888604B1 (ko) 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지
JP2012237130A JP6133040B2 (ja) 2011-10-28 2012-10-26 発光素子及び発光素子パッケージ
US13/662,348 US9165977B2 (en) 2011-10-28 2012-10-26 Light emitting device and light emitting device package including series of light emitting regions
TW101139757A TWI575775B (zh) 2011-10-28 2012-10-26 發光裝置及發光裝置封裝
EP12190234.0A EP2587542B1 (en) 2011-10-28 2012-10-26 Light emitting device and light emitting device package
CN201210421187.3A CN103094435B (zh) 2011-10-28 2012-10-29 发光器件及发光器件封装

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110111308A KR101888604B1 (ko) 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지

Publications (2)

Publication Number Publication Date
KR20130046754A KR20130046754A (ko) 2013-05-08
KR101888604B1 true KR101888604B1 (ko) 2018-08-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110111308A Expired - Fee Related KR101888604B1 (ko) 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지

Country Status (6)

Country Link
US (1) US9165977B2 (enExample)
EP (1) EP2587542B1 (enExample)
JP (1) JP6133040B2 (enExample)
KR (1) KR101888604B1 (enExample)
CN (1) CN103094435B (enExample)
TW (1) TWI575775B (enExample)

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CN103390713B (zh) * 2013-07-19 2016-04-13 深圳大道半导体有限公司 带光反射层的半导体发光器件
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TWI678001B (zh) * 2013-08-27 2019-11-21 晶元光電股份有限公司 具有複數個發光結構之發光元件
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CN110047865B (zh) * 2013-09-03 2024-02-23 晶元光电股份有限公司 具有多个发光结构的发光元件
TWI478387B (zh) * 2013-10-23 2015-03-21 隆達電子股份有限公司 發光二極體結構
KR102156376B1 (ko) * 2014-02-21 2020-09-15 엘지이노텍 주식회사 발광 소자
KR102156375B1 (ko) * 2014-02-21 2020-09-16 엘지이노텍 주식회사 발광 소자
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
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US9806152B2 (en) * 2016-03-04 2017-10-31 Pakal Technologies Llc Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
KR101760317B1 (ko) * 2016-05-02 2017-07-21 순천대학교 산학협력단 발광장치
CN114864781B (zh) * 2016-07-20 2025-02-25 苏州立琻半导体有限公司 半导体器件
KR102550007B1 (ko) * 2016-11-30 2023-07-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드
KR20180073866A (ko) * 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102737500B1 (ko) * 2016-12-27 2024-12-04 삼성전자주식회사 발광소자 패키지
US10553759B2 (en) * 2017-07-13 2020-02-04 Epistar Corporation Light-emitting device
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
DE102018101393A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
JP6717324B2 (ja) * 2018-02-27 2020-07-01 日亜化学工業株式会社 発光素子
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
US12684903B2 (en) 2021-03-31 2026-07-14 Nichia Corporation Method of manufacturing light-emitting element and light-emitting element
JP7339559B2 (ja) * 2021-05-20 2023-09-06 日亜化学工業株式会社 発光素子
JP7784328B2 (ja) * 2022-03-08 2025-12-11 スタンレー電気株式会社 半導体発光素子、半導体発光装置及び半導体発光装置モジュール
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Also Published As

Publication number Publication date
TW201318214A (zh) 2013-05-01
CN103094435B (zh) 2017-04-26
EP2587542B1 (en) 2018-02-28
CN103094435A (zh) 2013-05-08
JP2013098562A (ja) 2013-05-20
KR20130046754A (ko) 2013-05-08
TWI575775B (zh) 2017-03-21
JP6133040B2 (ja) 2017-05-24
US20130105845A1 (en) 2013-05-02
US9165977B2 (en) 2015-10-20
EP2587542A1 (en) 2013-05-01

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