JP6133040B2 - 発光素子及び発光素子パッケージ - Google Patents

発光素子及び発光素子パッケージ Download PDF

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Publication number
JP6133040B2
JP6133040B2 JP2012237130A JP2012237130A JP6133040B2 JP 6133040 B2 JP6133040 B2 JP 6133040B2 JP 2012237130 A JP2012237130 A JP 2012237130A JP 2012237130 A JP2012237130 A JP 2012237130A JP 6133040 B2 JP6133040 B2 JP 6133040B2
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Japan
Prior art keywords
light emitting
layer
electrode
emitting device
disposed
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JP2012237130A
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English (en)
Japanese (ja)
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JP2013098562A (ja
JP2013098562A5 (enExample
Inventor
キム・ソンキョン
ジュ・ヒョンソンウ
ホン・ジソク
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication of JP2013098562A5 publication Critical patent/JP2013098562A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
JP2012237130A 2011-10-28 2012-10-26 発光素子及び発光素子パッケージ Active JP6133040B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0111308 2011-10-28
KR1020110111308A KR101888604B1 (ko) 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지

Publications (3)

Publication Number Publication Date
JP2013098562A JP2013098562A (ja) 2013-05-20
JP2013098562A5 JP2013098562A5 (enExample) 2016-01-21
JP6133040B2 true JP6133040B2 (ja) 2017-05-24

Family

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Family Applications (1)

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JP2012237130A Active JP6133040B2 (ja) 2011-10-28 2012-10-26 発光素子及び発光素子パッケージ

Country Status (6)

Country Link
US (1) US9165977B2 (enExample)
EP (1) EP2587542B1 (enExample)
JP (1) JP6133040B2 (enExample)
KR (1) KR101888604B1 (enExample)
CN (1) CN103094435B (enExample)
TW (1) TWI575775B (enExample)

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CN104425538B (zh) * 2013-09-03 2019-05-03 晶元光电股份有限公司 具有多个发光结构的发光元件
TWI478387B (zh) * 2013-10-23 2015-03-21 隆達電子股份有限公司 發光二極體結構
KR102156375B1 (ko) * 2014-02-21 2020-09-16 엘지이노텍 주식회사 발광 소자
KR102156376B1 (ko) * 2014-02-21 2020-09-15 엘지이노텍 주식회사 발광 소자
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
CN108598251B (zh) * 2014-06-10 2021-12-03 世迈克琉明有限公司 半导体发光元件
KR101888608B1 (ko) 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
US10147849B2 (en) * 2015-05-05 2018-12-04 Xiangneng Hualei Optoelectronic Co., Ltd Manufacturing method of flip-chip structure of group III semiconductor light emitting device
DE102015112538B4 (de) 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
US9806152B2 (en) * 2016-03-04 2017-10-31 Pakal Technologies Llc Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
KR101760317B1 (ko) * 2016-05-02 2017-07-21 순천대학교 산학협력단 발광장치
US11183614B2 (en) * 2016-07-20 2021-11-23 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device
KR102550007B1 (ko) * 2016-11-30 2023-07-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드
KR20180073866A (ko) * 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102737500B1 (ko) * 2016-12-27 2024-12-04 삼성전자주식회사 발광소자 패키지
CN114464713B (zh) * 2017-07-13 2025-03-25 晶元光电股份有限公司 发光元件
US11552057B2 (en) * 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
DE102018101393A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
JP6717324B2 (ja) * 2018-02-27 2020-07-01 日亜化学工業株式会社 発光素子
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
JP7339559B2 (ja) * 2021-05-20 2023-09-06 日亜化学工業株式会社 発光素子
JP7784328B2 (ja) * 2022-03-08 2025-12-11 スタンレー電気株式会社 半導体発光素子、半導体発光装置及び半導体発光装置モジュール
WO2025097375A1 (en) * 2023-11-09 2025-05-15 Jade Bird Display (shanghai) Limited Micro led and micro led display panel

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Also Published As

Publication number Publication date
CN103094435B (zh) 2017-04-26
EP2587542B1 (en) 2018-02-28
JP2013098562A (ja) 2013-05-20
KR20130046754A (ko) 2013-05-08
TWI575775B (zh) 2017-03-21
CN103094435A (zh) 2013-05-08
TW201318214A (zh) 2013-05-01
US9165977B2 (en) 2015-10-20
KR101888604B1 (ko) 2018-08-14
EP2587542A1 (en) 2013-05-01
US20130105845A1 (en) 2013-05-02

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