JP5992179B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP5992179B2 JP5992179B2 JP2012034105A JP2012034105A JP5992179B2 JP 5992179 B2 JP5992179 B2 JP 5992179B2 JP 2012034105 A JP2012034105 A JP 2012034105A JP 2012034105 A JP2012034105 A JP 2012034105A JP 5992179 B2 JP5992179 B2 JP 5992179B2
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- 239000010410 layer Substances 0.000 claims description 302
- 239000004065 semiconductor Substances 0.000 claims description 119
- 239000011241 protective layer Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000000903 blocking effect Effects 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- -1 Si 3 N 4 Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000012777 electrically insulating material Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QCSXNSFTJPBQOI-UHFFFAOYSA-N [Zn+2].[O-2].[Zn+2].[In+3] Chemical compound [Zn+2].[O-2].[Zn+2].[In+3] QCSXNSFTJPBQOI-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 206010019332 Heat exhaustion Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/23—Sheet including cover or casing
- Y10T428/239—Complete cover or casing
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Description
第1電極162乃至168は、サブ発光領域P1〜Pn(n=4)のそれぞれの第2導電型半導体層142上に配置される。図1に示す第1電極162乃至168の形状は、上面視で長方形であるが、これに限定されるものではなく、第1電極162乃至168は様々な形態が可能である。
Claims (18)
- 導電型基板と、
前記導電型基板上に配置され、第1半導体層、第2半導体層、及び前記第1半導体層と
前記第2半導体層との間の活性層を有する複数の発光セルと、
前記第1半導体層の側面及び前記活性層の側面を覆うように配置された保護層と、
一つ以上の前記発光セルの前記第2半導体層を相互接続させる第1電極と
を備え、
前記保護層は、
前記第1半導体層の側面及び前記活性層の側面から前記発光セルのそれぞれの内部に延在する突出部を有し、
前記第1電極は、
前記第2半導体層の上部面及び前記発光セルの側面に配置され、前記第2半導体層の側面と接触する第2電極と、
前記第2半導体層の側面及び前記保護層の側面に配置され、隣接する発光セルのそれぞれの第2電極を相互接続させる接続電極とを有する、発光素子。 - 前記第1半導体層及び前記活性層は、それぞれの側面から内部への第1溝を有し、前記保護層は、前記第1溝に挿入される前記突出部を有する、請求項1に記載の発光素子。
- 前記保護層は、前記第2半導体層の側面の一部をさらに覆うように配置され、
前記保護層が覆う前記第2半導体層の側面の一部は、内部への第2溝を有し、前記第2溝を埋め込むように前記保護層の一部が延在する、請求項1または2に記載の発光素子。 - 前記接続電極は、前記第2半導体層の側面と接触する、請求項1乃至3のいずれかに記載の発光素子。
- 前記第2電極は、前記第2半導体層の縁領域、及び前記発光セルのそれぞれの外側面上に配置される、請求項1乃至4のいずれかに記載の発光素子。
- 前記接続電極は、
前記発光セルのそれぞれの内側面のうち少なくとも一つの内側面上に配置された第1接続電極と、
前記発光セル同士の間に位置する前記導電型基板上に配置された第2接続電極と、を備える、請求項1に記載の発光素子。 - 前記保護層は、前記第2接続電極と前記導電型基板との間に配置された部分を含む、請求項6に記載の発光素子。
- 前記第2電極は、前記第2半導体層の縁領域上に配置されている、請求項1に記載の発光素子。
- 前記導電型基板は、
支持基板と、
前記支持基板上の反射層と、
前記支持基板と前記反射層との間の接合層と、
前記反射層上のオーミック層とを備え、
前記保護層は前記オーミック層上に配置されている、請求項1乃至8のいずれかに記載の発光素子。 - 前記保護層は、前記オーミック層の側面を覆い、
前記保護層は、前記オーミック層の側面から内部に入り込む突起を有する、請求項9に記載の発光素子。 - 前記保護層は、
前記導電型基板の縁領域上に配置された第1サブ保護層と、
前記発光セルのそれぞれの側面の一部を覆うように前記導電型基板上に配置された第2サブ保護層と、
前記発光セルの間に位置する導電型基板上に配置された第3サブ保護層とを備える、請求項1乃至10のいずれかに記載の発光素子。 - 複数のサブ発光領域に区分されるように定義され、個別サブ発光領域に配置された第1半導体層、第2半導体層、及び前記第1半導体層と前記第2半導体層との間に配置された活性層を有する発光構造物と、
前記複数のサブ発光領域のそれぞれにおける発光構造物の側面に配置された保護層と、
一つ以上の前記サブ発光領域の前記第2半導体層を相互接続させる第1電極と、
前記第1半導体層の下部に配置され、前記それぞれのサブ発光領域の前記第1半導体層を共通に接続させる第2電極層とを備え、
前記発光構造物の側面は、
前記発光構造物の上面と隣接する第1面と、
前記発光構造物の下面と隣接し、前記第1面と段差を有する第2面と、
前記第1面と前記第2面とを接続する第3面とを有し、
前記保護層は前記第2面及び前記第3面を覆い、
前記発光構造物の前記第1面、前記第2面の一部、及び前記第3面は、前記第2半導体層の側面であり、前記発光構造物の前記第2面の残りの一部は、前記活性層及び前記第1半導体層の側面であり、
前記第1電極は、
前記第2半導体層の上部面及び前記発光セルの側面に配置され、前記第2半導体層の側面と接触する第2電極と、
前記第2半導体層の側面及び前記保護層の側面に配置され、隣接する発光セルのそれぞれの第2電極を相互接続させる接続電極とを有する、発光素子。 - 前記接続電極は、前記第2半導体層の側面と接触する、請求項12に記載の発光素子。
- 前記保護層の外側面は、前記第1面と同一平面上に位置する、請求項12または13に記載の発光素子。
- 前記保護層は、前記第2面と隣接する前記発光構造物の下面の縁領域を覆う、請求項12乃至14のいずれかに記載の発光素子。
- 前記保護層は、前記第1電極が前記活性層及び前記第1半導体層と電気的に接触することを防ぐ、請求項1乃至15のいずれかに記載の発光素子。
- 前記第2電極層は、前記発光構造物の下に配置される導電型基板を含む、請求項12に記載の発光素子。
- 前記第2電極は、前記第2半導体層の縁領域、及び前記発光セルのそれぞれの外側面上に配置される、請求項12乃至17のいずれかに記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0053183 | 2011-06-02 | ||
KR1020110053183A KR101799451B1 (ko) | 2011-06-02 | 2011-06-02 | 발광 소자 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012253318A JP2012253318A (ja) | 2012-12-20 |
JP2012253318A5 JP2012253318A5 (ja) | 2015-04-02 |
JP5992179B2 true JP5992179B2 (ja) | 2016-09-14 |
Family
ID=45819139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012034105A Active JP5992179B2 (ja) | 2011-06-02 | 2012-02-20 | 発光素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8748916B2 (ja) |
EP (1) | EP2530748B1 (ja) |
JP (1) | JP5992179B2 (ja) |
KR (1) | KR101799451B1 (ja) |
CN (1) | CN102810550B (ja) |
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TWI723886B (zh) * | 2013-03-18 | 2021-04-01 | 晶元光電股份有限公司 | 發光元件 |
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JP2015028967A (ja) | 2013-07-30 | 2015-02-12 | 株式会社東芝 | 半導体発光素子及び発光装置 |
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CN104953000B (zh) * | 2014-03-27 | 2019-02-15 | 首尔伟傲世有限公司 | 发光二极管及发光装置 |
KR102374671B1 (ko) * | 2015-03-13 | 2022-03-16 | 서울바이오시스 주식회사 | 발광 다이오드 |
TWI531098B (zh) * | 2014-06-27 | 2016-04-21 | 錼創科技股份有限公司 | 覆晶式發光二極體封裝結構及晶圓封裝結構 |
CN104638069A (zh) * | 2015-02-04 | 2015-05-20 | 映瑞光电科技(上海)有限公司 | 垂直型led芯片结构及其制作方法 |
KR102322692B1 (ko) | 2015-05-29 | 2021-11-05 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 자외선 발광소자 |
US11341426B2 (en) | 2015-11-27 | 2022-05-24 | Photonic Inc. | Systems, devices, and methods to interact with quantum information stored in spins |
CN105742417B (zh) * | 2016-03-09 | 2018-09-18 | 映瑞光电科技(上海)有限公司 | 一种垂直led芯片结构及其制备方法 |
US11024773B2 (en) * | 2016-11-07 | 2021-06-01 | Goertek. Inc | Micro-LED with vertical structure, display device, electronics apparatus and manufacturing method |
KR20180052256A (ko) * | 2016-11-10 | 2018-05-18 | 엘지이노텍 주식회사 | 반도체 소자 |
KR102618112B1 (ko) * | 2018-07-23 | 2023-12-27 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
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CN111308799B (zh) * | 2019-11-13 | 2021-05-07 | Tcl华星光电技术有限公司 | 阵列基板 |
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TWM382586U (en) * | 2009-10-29 | 2010-06-11 | Ind Tech Res Inst | Hermetic light emitting device |
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EP2530748A1 (en) | 2012-12-05 |
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