TWI575775B - 發光裝置及發光裝置封裝 - Google Patents

發光裝置及發光裝置封裝 Download PDF

Info

Publication number
TWI575775B
TWI575775B TW101139757A TW101139757A TWI575775B TW I575775 B TWI575775 B TW I575775B TW 101139757 A TW101139757 A TW 101139757A TW 101139757 A TW101139757 A TW 101139757A TW I575775 B TWI575775 B TW I575775B
Authority
TW
Taiwan
Prior art keywords
light
layer
disposed
emitting
light emitting
Prior art date
Application number
TW101139757A
Other languages
English (en)
Chinese (zh)
Other versions
TW201318214A (zh
Inventor
金省均
朱炫承
洪奇錫
Original Assignee
Lg伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg伊諾特股份有限公司 filed Critical Lg伊諾特股份有限公司
Publication of TW201318214A publication Critical patent/TW201318214A/zh
Application granted granted Critical
Publication of TWI575775B publication Critical patent/TWI575775B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8312Electrodes characterised by their shape extending at least partially through the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
TW101139757A 2011-10-28 2012-10-26 發光裝置及發光裝置封裝 TWI575775B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110111308A KR101888604B1 (ko) 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지

Publications (2)

Publication Number Publication Date
TW201318214A TW201318214A (zh) 2013-05-01
TWI575775B true TWI575775B (zh) 2017-03-21

Family

ID=47115528

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101139757A TWI575775B (zh) 2011-10-28 2012-10-26 發光裝置及發光裝置封裝

Country Status (6)

Country Link
US (1) US9165977B2 (enExample)
EP (1) EP2587542B1 (enExample)
JP (1) JP6133040B2 (enExample)
KR (1) KR101888604B1 (enExample)
CN (1) CN103094435B (enExample)
TW (1) TWI575775B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666764B2 (en) * 2012-04-09 2017-05-30 Cree, Inc. Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die
US10388690B2 (en) 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10804316B2 (en) * 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
JP2014127565A (ja) * 2012-12-26 2014-07-07 Toyoda Gosei Co Ltd 半導体発光素子
CN103390713B (zh) * 2013-07-19 2016-04-13 深圳大道半导体有限公司 带光反射层的半导体发光器件
US9847457B2 (en) 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
WO2015016561A1 (en) * 2013-07-29 2015-02-05 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and led module having the same
TWI597864B (zh) 2013-08-27 2017-09-01 晶元光電股份有限公司 具有複數個發光結構之發光元件
TWI678001B (zh) * 2013-08-27 2019-11-21 晶元光電股份有限公司 具有複數個發光結構之發光元件
CN110047865B (zh) * 2013-09-03 2024-02-23 晶元光电股份有限公司 具有多个发光结构的发光元件
TWI478387B (zh) * 2013-10-23 2015-03-21 隆達電子股份有限公司 發光二極體結構
KR102156376B1 (ko) * 2014-02-21 2020-09-15 엘지이노텍 주식회사 발광 소자
KR102156375B1 (ko) * 2014-02-21 2020-09-16 엘지이노텍 주식회사 발광 소자
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
CN108598251B (zh) * 2014-06-10 2021-12-03 世迈克琉明有限公司 半导体发光元件
KR101888608B1 (ko) * 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
US10147849B2 (en) * 2015-05-05 2018-12-04 Xiangneng Hualei Optoelectronic Co., Ltd Manufacturing method of flip-chip structure of group III semiconductor light emitting device
DE102015112538B4 (de) 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
US9806152B2 (en) * 2016-03-04 2017-10-31 Pakal Technologies Llc Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
KR101760317B1 (ko) * 2016-05-02 2017-07-21 순천대학교 산학협력단 발광장치
CN114864781B (zh) * 2016-07-20 2025-02-25 苏州立琻半导体有限公司 半导体器件
KR102550007B1 (ko) * 2016-11-30 2023-07-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드
KR20180073866A (ko) * 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102737500B1 (ko) * 2016-12-27 2024-12-04 삼성전자주식회사 발광소자 패키지
CN114464713B (zh) * 2017-07-13 2025-03-25 晶元光电股份有限公司 发光元件
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
DE102018101393A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
JP6717324B2 (ja) * 2018-02-27 2020-07-01 日亜化学工業株式会社 発光素子
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
JP7339559B2 (ja) * 2021-05-20 2023-09-06 日亜化学工業株式会社 発光素子
JP7784328B2 (ja) * 2022-03-08 2025-12-11 スタンレー電気株式会社 半導体発光素子、半導体発光装置及び半導体発光装置モジュール
WO2025097375A1 (en) * 2023-11-09 2025-05-15 Jade Bird Display (shanghai) Limited Micro led and micro led display panel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100140635A1 (en) * 2008-12-08 2010-06-10 Cree, Inc. Composite high reflectivity layer
WO2010132139A1 (en) * 2009-05-11 2010-11-18 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
EP2374162A1 (en) * 2008-12-08 2011-10-12 Cree, Inc. Light emitting diode with improved light extraction

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5996221A (en) * 1996-12-12 1999-12-07 Lucent Technologies Inc. Method for thermocompression bonding structures
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
EP1700344B1 (en) 2003-12-24 2016-03-02 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light emitting device and lighting module
JP3802911B2 (ja) * 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
EP2143303B1 (en) * 2007-04-02 2012-08-08 Koninklijke Philips Electronics N.V. Driving light emitting diodes
US8536584B2 (en) 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
KR101428053B1 (ko) * 2007-12-13 2014-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
JP5614938B2 (ja) * 2009-02-26 2014-10-29 日亜化学工業株式会社 半導体発光素子
US8476668B2 (en) * 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US9093293B2 (en) * 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
JP5246199B2 (ja) * 2010-03-31 2013-07-24 豊田合成株式会社 Iii族窒化物半導体発光素子
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
JP5793292B2 (ja) * 2010-02-17 2015-10-14 豊田合成株式会社 半導体発光素子
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
WO2011126248A2 (en) * 2010-04-06 2011-10-13 Seoul Opto Device Co., Ltd. Light emitting diode and method of fabricating the same
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR101115539B1 (ko) * 2011-06-10 2012-02-28 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
US8759847B2 (en) * 2011-12-22 2014-06-24 Bridgelux, Inc. White LED assembly with LED string and intermediate node substrate terminals
US9276166B2 (en) * 2012-04-13 2016-03-01 Epistar Corporation Method for forming light-emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100140635A1 (en) * 2008-12-08 2010-06-10 Cree, Inc. Composite high reflectivity layer
EP2374162A1 (en) * 2008-12-08 2011-10-12 Cree, Inc. Light emitting diode with improved light extraction
WO2010132139A1 (en) * 2009-05-11 2010-11-18 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same

Also Published As

Publication number Publication date
US9165977B2 (en) 2015-10-20
TW201318214A (zh) 2013-05-01
CN103094435A (zh) 2013-05-08
KR101888604B1 (ko) 2018-08-14
EP2587542B1 (en) 2018-02-28
US20130105845A1 (en) 2013-05-02
JP6133040B2 (ja) 2017-05-24
CN103094435B (zh) 2017-04-26
EP2587542A1 (en) 2013-05-01
KR20130046754A (ko) 2013-05-08
JP2013098562A (ja) 2013-05-20

Similar Documents

Publication Publication Date Title
TWI575775B (zh) 發光裝置及發光裝置封裝
TWI535061B (zh) 發光裝置
JP6053453B2 (ja) 発光素子
KR102087933B1 (ko) 발광 소자 및 이를 포함하는 발광 소자 어레이
CN104752451B (zh) 发光器件
CN103904095B (zh) 发光器件
JP2014116604A (ja) 発光素子
KR101830719B1 (ko) 발광 소자
KR20140092037A (ko) 발광 소자 패키지