CN103094435B - 发光器件及发光器件封装 - Google Patents

发光器件及发光器件封装 Download PDF

Info

Publication number
CN103094435B
CN103094435B CN201210421187.3A CN201210421187A CN103094435B CN 103094435 B CN103094435 B CN 103094435B CN 201210421187 A CN201210421187 A CN 201210421187A CN 103094435 B CN103094435 B CN 103094435B
Authority
CN
China
Prior art keywords
light emitting
layer
emitting device
semiconductor layer
distributed bragg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210421187.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN103094435A (zh
Inventor
朱炫承
洪奇锡
其他发明人请求不公开姓名
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103094435A publication Critical patent/CN103094435A/zh
Application granted granted Critical
Publication of CN103094435B publication Critical patent/CN103094435B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
CN201210421187.3A 2011-10-28 2012-10-29 发光器件及发光器件封装 Active CN103094435B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110111308A KR101888604B1 (ko) 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지
KR10-2011-0111308 2011-10-28

Publications (2)

Publication Number Publication Date
CN103094435A CN103094435A (zh) 2013-05-08
CN103094435B true CN103094435B (zh) 2017-04-26

Family

ID=47115528

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210421187.3A Active CN103094435B (zh) 2011-10-28 2012-10-29 发光器件及发光器件封装

Country Status (6)

Country Link
US (1) US9165977B2 (enExample)
EP (1) EP2587542B1 (enExample)
JP (1) JP6133040B2 (enExample)
KR (1) KR101888604B1 (enExample)
CN (1) CN103094435B (enExample)
TW (1) TWI575775B (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666764B2 (en) * 2012-04-09 2017-05-30 Cree, Inc. Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die
US10804316B2 (en) * 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10388690B2 (en) 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
JP2014127565A (ja) * 2012-12-26 2014-07-07 Toyoda Gosei Co Ltd 半導体発光素子
CN103390713B (zh) * 2013-07-19 2016-04-13 深圳大道半导体有限公司 带光反射层的半导体发光器件
WO2015016561A1 (en) * 2013-07-29 2015-02-05 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and led module having the same
US9847457B2 (en) 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
TWI678001B (zh) * 2013-08-27 2019-11-21 晶元光電股份有限公司 具有複數個發光結構之發光元件
TWI597864B (zh) 2013-08-27 2017-09-01 晶元光電股份有限公司 具有複數個發光結構之發光元件
CN110047865B (zh) * 2013-09-03 2024-02-23 晶元光电股份有限公司 具有多个发光结构的发光元件
TWI478387B (zh) * 2013-10-23 2015-03-21 隆達電子股份有限公司 發光二極體結構
KR102156376B1 (ko) * 2014-02-21 2020-09-15 엘지이노텍 주식회사 발광 소자
KR102156375B1 (ko) * 2014-02-21 2020-09-16 엘지이노텍 주식회사 발광 소자
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
US10008635B2 (en) * 2014-06-10 2018-06-26 Semicon Light Co., Ltd. Semiconductor light-emitting element
KR101888608B1 (ko) * 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
US10147849B2 (en) * 2015-05-05 2018-12-04 Xiangneng Hualei Optoelectronic Co., Ltd Manufacturing method of flip-chip structure of group III semiconductor light emitting device
DE102015112538B4 (de) 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
US9806152B2 (en) * 2016-03-04 2017-10-31 Pakal Technologies Llc Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
KR101760317B1 (ko) * 2016-05-02 2017-07-21 순천대학교 산학협력단 발광장치
CN114864781B (zh) * 2016-07-20 2025-02-25 苏州立琻半导体有限公司 半导体器件
KR102550007B1 (ko) * 2016-11-30 2023-07-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드
KR20180073866A (ko) * 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102737500B1 (ko) * 2016-12-27 2024-12-04 삼성전자주식회사 발광소자 패키지
US10553759B2 (en) * 2017-07-13 2020-02-04 Epistar Corporation Light-emitting device
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
DE102018101393A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
JP6717324B2 (ja) * 2018-02-27 2020-07-01 日亜化学工業株式会社 発光素子
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
US12684903B2 (en) 2021-03-31 2026-07-14 Nichia Corporation Method of manufacturing light-emitting element and light-emitting element
JP7339559B2 (ja) * 2021-05-20 2023-09-06 日亜化学工業株式会社 発光素子
JP7784328B2 (ja) * 2022-03-08 2025-12-11 スタンレー電気株式会社 半導体発光素子、半導体発光装置及び半導体発光装置モジュール
CN122228740A (zh) * 2023-11-09 2026-06-16 上海显耀显示科技股份有限公司 微led和微led显示面板
US20260239794A1 (en) * 2025-01-22 2026-08-13 Seoul Viosys Co., Ltd. Light emitting module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101897046A (zh) * 2007-12-13 2010-11-24 Lg伊诺特有限公司 半导体发光器件及其制造方法
EP2341543A1 (en) * 2009-12-31 2011-07-06 Seoul Opto Device Co., Ltd. Light emitting device and method of fabricating the same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5996221A (en) * 1996-12-12 1999-12-07 Lucent Technologies Inc. Method for thermocompression bonding structures
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
EP1700344B1 (en) * 2003-12-24 2016-03-02 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light emitting device and lighting module
JP3802911B2 (ja) * 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
RU2462841C2 (ru) * 2007-04-02 2012-09-27 Конинклейке Филипс Электроникс Н.В. Управление светодиодами
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US7915629B2 (en) * 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
JP5614938B2 (ja) * 2009-02-26 2014-10-29 日亜化学工業株式会社 半導体発光素子
US9093293B2 (en) * 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US8476668B2 (en) * 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
JP5246199B2 (ja) * 2010-03-31 2013-07-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP5793292B2 (ja) * 2010-02-17 2015-10-14 豊田合成株式会社 半導体発光素子
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
WO2011126248A2 (en) * 2010-04-06 2011-10-13 Seoul Opto Device Co., Ltd. Light emitting diode and method of fabricating the same
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR101115539B1 (ko) * 2011-06-10 2012-02-28 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
US8759847B2 (en) * 2011-12-22 2014-06-24 Bridgelux, Inc. White LED assembly with LED string and intermediate node substrate terminals
US9276166B2 (en) * 2012-04-13 2016-03-01 Epistar Corporation Method for forming light-emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101897046A (zh) * 2007-12-13 2010-11-24 Lg伊诺特有限公司 半导体发光器件及其制造方法
EP2341543A1 (en) * 2009-12-31 2011-07-06 Seoul Opto Device Co., Ltd. Light emitting device and method of fabricating the same

Also Published As

Publication number Publication date
TW201318214A (zh) 2013-05-01
EP2587542B1 (en) 2018-02-28
CN103094435A (zh) 2013-05-08
JP2013098562A (ja) 2013-05-20
KR20130046754A (ko) 2013-05-08
TWI575775B (zh) 2017-03-21
JP6133040B2 (ja) 2017-05-24
KR101888604B1 (ko) 2018-08-14
US20130105845A1 (en) 2013-05-02
US9165977B2 (en) 2015-10-20
EP2587542A1 (en) 2013-05-01

Similar Documents

Publication Publication Date Title
US9165977B2 (en) Light emitting device and light emitting device package including series of light emitting regions
US9640583B2 (en) Light emitting device and light emitting device array
US9620682B2 (en) Light emitting device
US9153622B2 (en) Series of light emitting regions with an intermediate pad
CN103855180B (zh) 发光器件
EP2750192A2 (en) Light emitting diode device
CN103400920A (zh) 发光器件、发光器件制造方法、发光器件封装和照明系统
KR101830719B1 (ko) 발광 소자
KR20140092037A (ko) 발광 소자 패키지

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210817

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address