KR101858316B1 - 플라즈마 처리 장치 및 그것에 이용하는 배기 구조 - Google Patents

플라즈마 처리 장치 및 그것에 이용하는 배기 구조 Download PDF

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Publication number
KR101858316B1
KR101858316B1 KR1020150060272A KR20150060272A KR101858316B1 KR 101858316 B1 KR101858316 B1 KR 101858316B1 KR 1020150060272 A KR1020150060272 A KR 1020150060272A KR 20150060272 A KR20150060272 A KR 20150060272A KR 101858316 B1 KR101858316 B1 KR 101858316B1
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KR
South Korea
Prior art keywords
plasma
exhaust
chamber
processing
substrate
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KR1020150060272A
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English (en)
Korean (ko)
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KR20150129608A (ko
Inventor
도시히로 도조
야스후미 우츠기
가즈오 사사키
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20150129608A publication Critical patent/KR20150129608A/ko
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Publication of KR101858316B1 publication Critical patent/KR101858316B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020150060272A 2014-05-12 2015-04-29 플라즈마 처리 장치 및 그것에 이용하는 배기 구조 KR101858316B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014098808A JP6305825B2 (ja) 2014-05-12 2014-05-12 プラズマ処理装置およびそれに用いる排気構造
JPJP-P-2014-098808 2014-05-12

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170133384A Division KR101891445B1 (ko) 2014-05-12 2017-10-13 플라즈마 처리 장치 및 그것에 이용하는 배기 구조

Publications (2)

Publication Number Publication Date
KR20150129608A KR20150129608A (ko) 2015-11-20
KR101858316B1 true KR101858316B1 (ko) 2018-05-15

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KR1020150060272A KR101858316B1 (ko) 2014-05-12 2015-04-29 플라즈마 처리 장치 및 그것에 이용하는 배기 구조
KR1020170133384A KR101891445B1 (ko) 2014-05-12 2017-10-13 플라즈마 처리 장치 및 그것에 이용하는 배기 구조

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Country Status (4)

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JP (1) JP6305825B2 (ja)
KR (2) KR101858316B1 (ja)
CN (2) CN105097405B (ja)
TW (1) TWI657476B (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109196619B (zh) * 2016-06-03 2021-10-26 瑞士艾发科技 等离子体蚀刻室和等离子体蚀刻的方法
KR102612248B1 (ko) * 2016-09-05 2023-12-12 세메스 주식회사 기판 처리 장치 및 방법
JP6969182B2 (ja) * 2017-07-06 2021-11-24 東京エレクトロン株式会社 プラズマ処理装置
JP6896565B2 (ja) * 2017-08-25 2021-06-30 東京エレクトロン株式会社 インナーウォール及び基板処理装置
JP6967954B2 (ja) * 2017-12-05 2021-11-17 東京エレクトロン株式会社 排気装置、処理装置及び排気方法
CN109037019B (zh) * 2018-07-03 2020-04-28 深圳市华星光电半导体显示技术有限公司 干蚀刻设备
JP7166147B2 (ja) * 2018-11-14 2022-11-07 東京エレクトロン株式会社 プラズマ処理装置
JP7224192B2 (ja) 2019-01-22 2023-02-17 東京エレクトロン株式会社 プラズマ処理装置
JP7232705B2 (ja) * 2019-05-16 2023-03-03 東京エレクトロン株式会社 プラズマ処理装置
JP7308711B2 (ja) * 2019-09-26 2023-07-14 東京エレクトロン株式会社 プラズマ処理装置
JP7437985B2 (ja) * 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7418285B2 (ja) 2020-05-27 2024-01-19 東京エレクトロン株式会社 基板処理装置とその製造方法、及び排気構造
CN113838730B (zh) * 2020-06-08 2024-05-14 中微半导体设备(上海)股份有限公司 气体遮挡环、等离子体处理装置及调控聚合物分布的方法
CN112233962B (zh) * 2020-09-17 2023-08-18 北京北方华创微电子装备有限公司 套装于基座上的收集组件及半导体腔室
JP7446190B2 (ja) * 2020-09-23 2024-03-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ生成方法
CN112708865B (zh) * 2021-03-29 2021-07-09 上海陛通半导体能源科技股份有限公司 用于改善薄膜均匀性的镀膜设备
JP2023137352A (ja) * 2022-03-18 2023-09-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135739A (ja) 2006-11-15 2008-06-12 Applied Materials Inc プラズマ放射分布の磁気コントロール増強のためのプラズマ閉じ込めバッフルおよび流量平衡器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3150058B2 (ja) * 1994-12-05 2001-03-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
KR100557843B1 (ko) * 2001-08-20 2006-03-10 동경 엘렉트론 주식회사 드라이 현상 방법
JP4330315B2 (ja) * 2002-03-29 2009-09-16 東京エレクトロン株式会社 プラズマ処理装置
JP4255747B2 (ja) * 2003-05-13 2009-04-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN101207001B (zh) * 2006-12-22 2010-05-19 北京北方微电子基地设备工艺研究中心有限责任公司 排气装置及包含该排气装置的反应腔室
JP5168907B2 (ja) * 2007-01-15 2013-03-27 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
KR20090024522A (ko) * 2007-09-04 2009-03-09 주식회사 유진테크 기판처리장치
JP5256866B2 (ja) * 2008-02-05 2013-08-07 東京エレクトロン株式会社 処理装置
JP5230225B2 (ja) * 2008-03-06 2013-07-10 東京エレクトロン株式会社 蓋部品、処理ガス拡散供給装置、及び基板処理装置
JP5217569B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマ処理装置
JP5350043B2 (ja) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101083448B1 (ko) * 2009-10-29 2011-11-14 주식회사 뉴파워 프라즈마 다중 기판처리챔버
JP2012182349A (ja) * 2011-03-02 2012-09-20 Japan Steel Works Ltd:The プラズマ処理装置及び被処理体のプラズマ処理方法
JP2013105664A (ja) * 2011-11-15 2013-05-30 Tokyo Electron Ltd 高周波アンテナ回路及び誘導結合プラズマ処理装置
JP5593418B2 (ja) * 2013-05-08 2014-09-24 東京エレクトロン株式会社 処理容器およびプラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135739A (ja) 2006-11-15 2008-06-12 Applied Materials Inc プラズマ放射分布の磁気コントロール増強のためのプラズマ閉じ込めバッフルおよび流量平衡器

Also Published As

Publication number Publication date
JP2015216260A (ja) 2015-12-03
CN105097405A (zh) 2015-11-25
KR20150129608A (ko) 2015-11-20
TWI657476B (zh) 2019-04-21
CN107845558A (zh) 2018-03-27
KR20170119319A (ko) 2017-10-26
CN105097405B (zh) 2018-01-30
JP6305825B2 (ja) 2018-04-04
CN107845558B (zh) 2019-10-25
KR101891445B1 (ko) 2018-08-23
TW201606845A (zh) 2016-02-16

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