KR102612248B1 - 기판 처리 장치 및 방법 - Google Patents
기판 처리 장치 및 방법 Download PDFInfo
- Publication number
- KR102612248B1 KR102612248B1 KR1020160113576A KR20160113576A KR102612248B1 KR 102612248 B1 KR102612248 B1 KR 102612248B1 KR 1020160113576 A KR1020160113576 A KR 1020160113576A KR 20160113576 A KR20160113576 A KR 20160113576A KR 102612248 B1 KR102612248 B1 KR 102612248B1
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- Prior art keywords
- chamber
- substrate
- fluid
- heater
- substrate processing
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title description 9
- 239000012530 fluid Substances 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 9
- 230000002265 prevention Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims 2
- 239000003517 fume Substances 0.000 description 10
- 239000000356 contaminant Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
- H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Solid Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
13 : 기판용 히터 15 : 프레임
17 : 배기부 18 : 유로
19 : 유체 유입부 21 : 유체용 히터
23 : 차단부 25 : 이물질 방지부
100 : 기판 처리 장치
Claims (8)
- 챔버;
기판을 가열하도록 상기 챔버 저면에 배치되는 기판용 히터;
상기 챔버 상부를 개방시키도록 구비되는 배기부;
상기 배기부에 연통되도록 구비되고, 외부로부터 상기 챔버 내부로 유체를 유입시킬 수 있는 유로가 형성되도록 상기 배기부의 내측면에서부터 상기 챔버 상측 내측면, 및 상기 챔버의 내측면 일부까지 계속적으로 이어짐과 아울러 마주하도록 구비되는 유체 유입부; 및
상기 유로를 통하여 유입되는 유체를 가열하는 유체용 히터를 포함하되,
상기 유체용 히터는 상기 챔버 내부 상측에서 하측으로 바라볼 수 있게 상기 유체 유입부 중에서 상기 챔버 상측 내측면과 마주하는 부분에 면접하도록 배치시키는 것을 특징으로 하는 기판 처리 장치. - 제1 항에 있어서,
상기 기판용 히터 아래의 챔버를 차단시키는 차단부를 더 포함하는 것을 특징으로 하는 기판 처리 장치. - 제2 항에 있어서,
상기 차단부는 상기 기판용 히터를 둘러싸면서 상기 챔버 내측 벽면까지 연장되는 구조를 갖도록 구비되는 것을 특징으로 하는 기판 처리 장치. - 삭제
- 삭제
- 제1 항에 있어서,
상기 배기부로부터 상기 챔버 내부로 이물질이 떨어지는 것을 방지하도록 상기 배기부 아래의 챔버 내부에 이물질 방지부가 더 구비되는 것을 특징으로 하는 기판 처리 장치. - 챔버 내에 배치되는 기판용 히터에 놓이는 기판을 가열시키는 가열 공정이 이루어지는 기판 처리 방법에 있어서,
상기 기판을 가열시킬 때 상기 챔버 상부로부터 상기 챔버 벽면을 따라 더운 공기를 유입시키는 단계; 및
상기 챔버 내부로 유입시킨 상기 더운 공기를 상기 챔버 상부에 구비되는 배기부를 통하여 상기 챔버 외부로 배시키는 단계를 포함하고, 그리고
상기 챔버 벽면을 따라 유입되는 더운 공기를 가열시키는 단계를 더 포함하되, 상기 챔버 벽면 중에서 상기 챔버 내부 상측에서 하측을 바라볼 수 있게 상기 챔버 상측 내측면과 마주하는 부분에 면접하도록 배치되는 유체용 히터를 사용하여 상기 챔버 벽면을 따라 유입되는 더운 공기를 가열시키는 것을 특징으로 하는 기판 처리 방법. - 삭제
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KR1020160113576A KR102612248B1 (ko) | 2016-09-05 | 2016-09-05 | 기판 처리 장치 및 방법 |
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KR20180026821A KR20180026821A (ko) | 2018-03-14 |
KR102612248B1 true KR102612248B1 (ko) | 2023-12-12 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124096A (ja) * | 1998-10-16 | 2000-04-28 | Matsushita Electric Ind Co Ltd | 熱処理炉装置 |
KR101440307B1 (ko) * | 2012-09-17 | 2014-09-18 | 주식회사 유진테크 | 기판처리장치 |
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KR100484945B1 (ko) * | 2002-08-12 | 2005-04-22 | 주성엔지니어링(주) | 멀티 홀 앵글드 가스분사 시스템을 갖는 반도체소자 제조장치 |
JP6305825B2 (ja) * | 2014-05-12 | 2018-04-04 | 東京エレクトロン株式会社 | プラズマ処理装置およびそれに用いる排気構造 |
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- 2016-09-05 KR KR1020160113576A patent/KR102612248B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124096A (ja) * | 1998-10-16 | 2000-04-28 | Matsushita Electric Ind Co Ltd | 熱処理炉装置 |
KR101440307B1 (ko) * | 2012-09-17 | 2014-09-18 | 주식회사 유진테크 | 기판처리장치 |
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