TWI703677B - 用於加工基板的裝置 - Google Patents
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Abstract
一種用於加工基板的裝置(100),其具有:至少一真空室(10),在其中一規定的氣壓可被調節;用於加熱該基板的加熱構件;及佈置於該真空室(10)外部的雷射構件(20),其中該雷射構件(20)可相對於該基板運動,其中藉由該雷射構件(20),該佈置於該真空室(10)內之基板的至少一腔室可透過熔化基板材料而閉鎖。
Description
本發明係有關於一種用於加工基板的裝置。
在先前技術中揭露了若干雷射加工設備,在該等雷射加工設備中,加工時用所需的氣體在開放式的系統中沖洗待加工的基板。用氣體沖洗可有助於冷卻基板或運走工藝產品。
DE 42 38 826 C1公開了用於照射帶兩室系統之基板的裝置,其中在超高真空下鍛化矽基板。其中,雷射源佈置於該裝置的外部,待加工的矽基板位於第一真空室中,用於相對於該矽基板而改變雷射輻射的位置之運動的鏡子位於第二真空室中。進而透過兩扇窗戶使得來自外部的雷射輻射照在佈置於第一真空室中的矽基板上。
為製造薄膜晶體管(TFT)而使用雷射熔化已被揭露。在TFT中,多晶矽形成活性層,透過加熱並結晶作為起始材料的非晶矽層形成此活性層。由於將玻璃用作低熔點的基板材料,因而較佳地使用基板之具有較低熱負荷的方法,如:雷射熔化。
在US 6 797 651 B2中對用於雷射熔化矽而製造具有平滑表面之多晶矽層的方法及裝置進行了說明。為此在真空室中,在範圍為1.3 x 103Pa至1.3Pa的壓力下進行該雷射熔化。如此便能產生具有較低表面粗糙
度的多晶矽層。在此裝置中,透過壁室窗戶使得聚焦的雷射光束對準壁室內的物體。該壁室包括惰性氣體輸入口、用於產生真空的泵與壓力控制器,以控制所述的壓力範圍。所使用的惰性氣體自組別氮氣(N 2)、氬氣及氖氣中選擇。
因此本發明之目的在於,提供一種用於加工基板的改良裝置。
根據第一態樣,本發明用以達成上述目的之解決方案為一種用於加工基板的裝置,其具有:至少一真空室,在其中一規定的氣壓可被調節;用於加熱該基板的加熱構件;及佈置於該真空室外部的雷射構件,其中該雷射構件可相對於該基板運動,其中藉由該雷射構件,該佈置於該真空室內之基板的至少一腔室可透過熔化基板材料而閉鎖。
以此種方式實現可加熱真空製程室與雷射加工構件的組合,藉由其可在確切規定的環境壓力下閉鎖基板中的接入開口。從而可製造具有確切規定的腔室內壓之MEMS元件。
該裝置之有利的改良方案為附屬項之內容。
該裝置之一種有利的改良方案特徵在於,該加熱構件佈置於該真空室中。如此便能實現真空室與加熱構件之節省空間的組合。
該裝置之另一有利的改良方案特徵在於,該加熱構件佈置於分開的加熱室中。如此便能提供更多的加熱性能,其中按情況可加熱更多
數量的基板。
該裝置之另一有利的改良方案特徵在於,藉由該加熱構件,一或多個基板可被同時加熱。如此便能實現對基板有效且省時的加工。
該裝置之另一有利的改良方案特徵在於,其另具用於保持該基板的保持構件。如此便能實現基板相對於雷射構件之較高的調整或定位精確度。
該裝置之另一有利的改良方案特徵在於,該保持構件構建為機械保持構件、真空保持構件或靜電保持構件。以此種方式,為該保持構件提供不同的技術可能性,針對該基板的不同固定方案可透過該等技術可能性實現。
該裝置之另一有利的改良方案在於,該雷射構件設計為近紅外範圍內的雷射器。從而提供雷射熔化基板材料的有效可能性,以達成閉鎖腔室的接入開口之目的。
該裝置之另一有利的改良方案在於,該雷射構件設計為脈衝雷射器或連續雷射器。藉此,閉鎖MEMS元件腔室的方法可有利地以不同類型之雷射器實現。
該裝置之另一有利的改良方案特徵在於,該雷射構件的波長範圍較佳地處於約1000nm與約1100nm之間,尤佳地處於約1060nm與約1080nm之間。
該裝置之另一有利的改良方案特徵在於,其還具有用於冷卻該基板的冷卻構件。如此便能實現為雷射加工而最佳化之規定的基板溫度。進而可在不同的規定溫度下閉鎖腔室。
該裝置之另一有利的改良方案特徵在於,其還具有傳輸構件,用於在該等各種構件之間傳輸該基板。從而支持基板在各個構件與裝置壁室之間自動、局部的位移,進而支持有效地用該基板製造MEMS元件。
該裝置之另一有利的改良方案特徵在於,該基板材料為矽。
下面根據多個附圖對其他特徵與優點進行詳細說明。在說明書及附圖中所描述以及在申請專利範圍中回溯引用的所有特徵皆構成本發明的內容。相同或功能相同的元件用同一元件符號表示。
10‧‧‧真空室
11‧‧‧真空連接
12‧‧‧玻璃連接
13‧‧‧窗戶
14‧‧‧真空閘
20‧‧‧雷射構件
21‧‧‧第二定位構件
30‧‧‧保持構件
31‧‧‧定位構件
50‧‧‧加熱室、壁室
60‧‧‧傳輸構件
61‧‧‧基板處理器
70‧‧‧冷卻室、壁室
100‧‧‧裝置
200‧‧‧步驟
210‧‧‧步驟
220‧‧‧步驟
230‧‧‧步驟
240‧‧‧步驟
250‧‧‧步驟
圖1為用於加工基板的裝置之橫截面圖;圖2為另一用於加工基板的裝置之橫截面圖;圖3為另一用於加工基板的裝置之橫截面圖;圖4為另一用於加工基板的裝置之俯視圖;以及圖5為加工基板之方法的基本流程。
微機械元件(MEMS元件)可包括第一微機械感應器元件(如:轉速感應器)與第二微機械感應器元件(如:加速感應器)。藉由接合材料可形成形式為較佳地由矽構成之拱形晶體的拱形元件,其與MEMS元件共同實現了接合連接。透過該第一感應器元件可構建一腔室,在該腔室內封閉有規定的內壓。為實現高品質的轉速感應器,要求極低的內壓。
透過該第二感應器元件還可佈置一腔室,在該腔室中封閉有規定的壓力。該等兩個所述的感應器元件可在空間上彼此隔離地佈置於共
同的拱形元件下,並以此種方式實現低成本、節省空間的帶轉速感應器與加速感應器之微機械元件。
本發明提出一種裝置,用其可將基板製造為所述的微機械元件之一種。
圖1為用於加工基板以製造MEMS元件的裝置100的第一實施方案的橫截面圖。該裝置100包括具有調節至雷射構件20的波長之光學窗戶13的真空室10,透過其可使得該佈置在外部的雷射構件20聚焦照射進該真空室10中,並熔化基板材料(如:矽、玻璃),進而可閉鎖基板之腔室的接入開口。矽的熔化有利地在小於約100Pa的壓力中進行。該雷射構件20可構建為近紅外範圍內的脈衝雷射器或連續雷射器(CW雷射器)。
此外,在該真空室10中佈置有保持構件30,藉由其可保持或固定基板(未顯示)。此外,藉由該保持構件30可補償基板的彎曲(英語:waferbow)。該保持構件30例如可實現靜電、機械或真空的保持。第一定位構件31係用於該機版,以相對該裝置100的座標系調整該基板的位置與方向。
為達成此目的,該基板可透過x/y台在固定的雷射光學元件下移動,並可以+/-10pm及10pm以下的定位精度相對於該雷射構件20進行定位。該雷射構件20的雷射光束可替代地藉由掃描光學元件(未顯示)透過該基板受到導引。亦可替代地藉由可移動的鏡子(未顯示)在固定的基板之範圍內移動該雷射構件20的雷射光束(“飛行光學”)。可替代地透過具有圖像處理的攝影機(未顯示)相對於基板調節該雷射構件20的雷射光束。
為在移動速度較高時同時提高定位精確度,可將x/y台或轉動台與掃描光學元件進行組合。
在該真空室10中可安裝有真空連接11與玻璃連接12,用以調節該真空室10內規定的壓力。此外,該真空室10還可包括真空閘14,該真空閘允許對該真空室10以真空兼容的方式進行裝載及卸載。
為加熱基板,該保持構件30可藉由加熱構件(未顯示)被加熱,較佳地在加熱範圍約100℃至500℃之間,且較佳地對其進行控制。藉由可加熱的保持構件30可在雷射閉鎖過程之前將基材加熱或乾燥或蒸發。如此便能以規定的方式對基板進行預處理,從而在閉鎖雷射後較好地保持規定的內壓。為達成此目的,亦可有利地對真空室10進行通風並泵吸(英語:pump-and purge process),如此便能以此種方式為改良的基材清潔過程提供支持。
為閉鎖腔室的接入開口,將該微機械元件的矽局部有限制地熔化。為熔化矽,較佳地安裝近紅外範圍內的連續雷射器(CW雷射器)。有利地,為在規定的氣壓下閉鎖接入開口而使用波長約>500nm的IR雷射器(紅外雷射器)。此種雷射器的紅外輻射極深地穿透入矽基板中,從而實現對接入開口極深且可靠的閉鎖。
此外有利地,安裝作為雷射構件20的脈衝雷射器,其脈衝長小於約100μs,脈衝與暫停時間內的平均性能小於60kW,以便有利地儘可能低地保持MEMS結構的熱應力。
該裝置100可選地可具有另一雷射室(未顯示),在該雷射室中藉由雷射鑽孔產生通向MEMS腔室的入口(未顯示)。
圖2為用於加工基板的裝置100之另一方案。在此情況下,該雷射構件20包括用於該雷射構件20的第二定位構件21,藉由該第二定位構件可相對於該基板在該真空室10中定位該雷射構件20。在此情況下,毋需用於保持構件30的定位構件31。
此外有利地,可將一個以上的MEMS結構敷設在至少兩個氣密隔離的腔室中,並用該雷射構件20的雷射脈衝閉鎖至少一腔室。在該等腔室中,可對不同的壓力進行調節。可在第一腔室中透過接合法來界定內含壓力,或者,可在第二腔室中透過雷射閉鎖過程進行界定。可替代地透過雷射閉鎖分別實現該等腔室中之不同的內壓。有利地,在該二分開的腔室中分別佈置有至少一加速感應器或轉速感應器或磁場感應器或壓力感應器。
可選地,可針對該裝置100安裝位於上游之分開的加熱室50,並在規定的氣壓或真空條件下運輸MEMS元件。透過精確的壓力控制以及將不同氣體連接至該真空室10上,可在具有不同互相隔離的腔室的MEMS芯片上,對不同的腔室內壓與氣體氣壓進行調節。透過在閉鎖前用該分開的加熱室50對MEMS元件進行額外加熱,可更好地避免閉鎖後透過排氣提高壓力。
該分開的加熱室50之另一優點在於,提高該機器的總通過量。透過壁室10、50與70之間的真空閘14,可分別調節並控制該等壁室10、50與70的不同處理要求(如:溫度參數、時間參數、壓力參數)。
圖3為此種改良裝置100的橫截面圖。該位於上游之分開的加熱室50可接收一或多個基板,其中在真空下、在規定的氣壓下或透過泵
吸與通風循環(英語:pumpe and purge)可進行加熱。該位於上游之加熱室50可同樣具有真空連接11與玻璃連接12,用於調節該加熱室50內規定的氣壓。
該加熱室50主要用於對基板表面進行有針對性的排氣,以在溫度的作用下並藉由製程氣體將吸附物自基板的表面上分開。此點係在微機械元件的整個使用壽命內實現穩定內壓的必要之舉。在此情況下,必須在真空(或惰性氣體)條件下確保該基板自加熱室50至真空室10的傳輸。為達成此目的,安裝了額外的傳輸構件60。
該裝置100可選地可具有冷卻室70,以在加熱至加工溫度(英語:handling temperature)後冷卻該基板。如此便能藉由該冷卻室70將基板的溫度調節至規定的溫度,以隨後在該真空室10中透過雷射熔化進行閉鎖。
該設備在多個壁室存在的情況下可具有可自動操作的傳輸構件60,其可配設用於在該裝置100的不同壁室之間傳輸基板的基板處理器61(英語:Substrate handler)。
如4為此種改良裝置100的俯視圖。可辨識居中佈置的傳輸構件60,該基板可藉由該傳輸構件移動至該等壁室10、50與70並在各個壁室之間移動。在該傳輸構件60與該等壁室10、50與70之間可分別安裝有一真空閘14。
圖4顯示操作該裝置100的方法之基本流程。
在第一步驟200中,將基板裝載入該真空室10。
在步驟210中,對該真空室10內之真空進行調節。
在步驟220中,相對於該雷射構件20校準該基板。
在步驟230中,相對於該雷射構件20對MEMS元件之腔室的接入開口進行定位。
在步驟240中,用該雷射構件20加工基板,以達成閉鎖基板腔室的接入開口之目的。
在步驟250中,自該裝置100的真空室10卸載該基板。
按情況可多次反覆進行步驟230與240,直至基板上所有的腔室被閉鎖,此點透過反向箭頭顯示。
不言而喻,可採用該方法的多個改良方案,其中根據要求適當地調節各個加工步驟及其在各個壁室中的順序。
總之,本發明提供了一種裝置,用其可有利地,透過藉由雷射光束閉鎖腔室的接入開口來製造MEMS元件。如此便能透過組合可加熱的真空製程室與雷射器來有效製造所述元件。
本發明之裝置並非僅限於前述之具體實施例。因此,相關領域通常知識者認識到,該裝置可以多個此前未公開或僅部分公開的改良方案而實現。有鑒於此,相關領域通常知識者可適當地改變前述特徵或將其加以組合,而不偏離本發明的核心。
10‧‧‧真空室
11‧‧‧真空連接
12‧‧‧玻璃連接
13‧‧‧窗戶
14‧‧‧真空閘
20‧‧‧雷射構件
30‧‧‧保持構件
31‧‧‧定位構件
100‧‧‧裝置
Claims (10)
- 一種用於加工基板的裝置(100),其具有:至少一真空室(10),在其中一規定的氣壓可被調節;用於加熱該基板的加熱構件;及佈置於該真空室(10)外部的雷射構件(20),其中該雷射構件(20)可相對於該基板運動,其中藉由該雷射構件(20),該佈置於該真空室(10)內之基板的至少一腔室可透過熔化基板材料而閉鎖。
- 如申請專利範圍第1項之裝置(100),其特徵在於,該加熱構件佈置於該真空室(10)中。
- 如申請專利範圍第1項之裝置(100),其特徵在於,該加熱構件佈置於分開的加熱室(50)中。
- 如前述申請專利範圍第1至3項中任一項之裝置(100),其特徵在於,藉由該加熱構件,一或多個基板可被同時加熱。
- 如前述申請專利範圍第1至3項中任一項之裝置(100),另具有用於保持該基板的保持構件(30)。
- 如申請專利範圍第5項之裝置(100),其特徵在於,該保持構件(30)構建為機械保持構件、真空保持構件或靜電保持構件。
- 如前述申請專利範圍第1至3項中任一項之裝置(100),其特徵在於,該雷射構件(20)設計為近紅外範圍內的雷射器。
- 如前述申請專利範圍第1至3項中任一項之裝置(100),其還具有用於冷卻該基板的冷卻構件(70)。
- 如申請專利範圍第3項之裝置(100),其還具有傳輸構件(60),用於 在規定的氣壓下在該等各種構件(10,50,70)之間傳輸該基板。
- 一種如前述申請專利範圍中任一項之裝置(100)的應用,用於用該基板製造微機械元件。
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