DE102015202575A1 - Vorrichtung zum Bearbeiten eines Substrats - Google Patents

Vorrichtung zum Bearbeiten eines Substrats Download PDF

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Publication number
DE102015202575A1
DE102015202575A1 DE102015202575.6A DE102015202575A DE102015202575A1 DE 102015202575 A1 DE102015202575 A1 DE 102015202575A1 DE 102015202575 A DE102015202575 A DE 102015202575A DE 102015202575 A1 DE102015202575 A1 DE 102015202575A1
Authority
DE
Germany
Prior art keywords
substrate
laser
contraption
vacuum chamber
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102015202575.6A
Other languages
German (de)
English (en)
Inventor
Frank Reichenbach
Jochen Reinmuth
Philip Kappe
Juergen Butz
Jens Frey
Mawuli Ametowobla
Julia Amthor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE102015202575.6A priority Critical patent/DE102015202575A1/de
Priority to ATA50065/2016A priority patent/AT516786B1/de
Priority to TW105103716A priority patent/TWI703677B/zh
Priority to CN201610082140.7A priority patent/CN105895555B/zh
Publication of DE102015202575A1 publication Critical patent/DE102015202575A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02035—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
    • B23K37/047—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work moving work to adjust its position between soldering, welding or cutting steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00492—Processes for surface micromachining not provided for in groups B81C1/0046 - B81C1/00484
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
    • H01L21/786—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2900/00—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Plasma & Fusion (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
DE102015202575.6A 2015-02-12 2015-02-12 Vorrichtung zum Bearbeiten eines Substrats Pending DE102015202575A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102015202575.6A DE102015202575A1 (de) 2015-02-12 2015-02-12 Vorrichtung zum Bearbeiten eines Substrats
ATA50065/2016A AT516786B1 (de) 2015-02-12 2016-02-04 Vorrichtung zum Bearbeiten eines Substrats
TW105103716A TWI703677B (zh) 2015-02-12 2016-02-04 用於加工基板的裝置
CN201610082140.7A CN105895555B (zh) 2015-02-12 2016-02-05 用于加工衬底的设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015202575.6A DE102015202575A1 (de) 2015-02-12 2015-02-12 Vorrichtung zum Bearbeiten eines Substrats

Publications (1)

Publication Number Publication Date
DE102015202575A1 true DE102015202575A1 (de) 2016-08-18

Family

ID=56551981

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102015202575.6A Pending DE102015202575A1 (de) 2015-02-12 2015-02-12 Vorrichtung zum Bearbeiten eines Substrats

Country Status (4)

Country Link
CN (1) CN105895555B (zh)
AT (1) AT516786B1 (zh)
DE (1) DE102015202575A1 (zh)
TW (1) TWI703677B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110085537B (zh) * 2019-04-15 2021-09-24 东莞市中镓半导体科技有限公司 温度可控的用于高温激光剥离的装置
TWI794589B (zh) * 2020-02-21 2023-03-01 海納光電股份有限公司 硬脆板材高溫環境加工裝置及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4238826C1 (de) 1992-11-17 1994-04-28 Microlas Lasersystem Gmbh Vorrichtung zum Bestrahlen eines Substrates
US6797651B2 (en) 2001-02-22 2004-09-28 Sanyo Electric Co., Ltd. Method for manufacturing polycrystalline semiconductor layers and thin-film transistors and laser annealing apparatus

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3573811B2 (ja) * 1994-12-19 2004-10-06 株式会社半導体エネルギー研究所 線状レーザー光の照射方法
JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
US6762072B2 (en) * 2002-03-06 2004-07-13 Robert Bosch Gmbh SI wafer-cap wafer bonding method using local laser energy, device produced by the method, and system used in the method
US20050189621A1 (en) * 2002-12-02 2005-09-01 Cheung Kin P. Processes for hermetically packaging wafer level microscopic structures
GB0510873D0 (en) * 2005-05-27 2005-07-06 Univ Heriot Watt Laser assisted bonding of surfaces
KR100740462B1 (ko) * 2005-09-15 2007-07-18 주식회사 비에스이 지향성 실리콘 콘덴서 마이크로폰
US7599048B2 (en) * 2007-02-09 2009-10-06 Wafermasters, Inc. Optical emission spectroscopy process monitoring and material characterization
KR100859689B1 (ko) * 2007-03-27 2008-09-23 삼성에스디아이 주식회사 레이저 어닐 장치 및 레이저 어닐 방법
CN101301993A (zh) * 2007-05-11 2008-11-12 北京大学 一种mems器件真空封装方法
NL1036460A1 (nl) * 2008-02-20 2009-08-24 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
CN102530844B (zh) * 2012-02-03 2015-02-18 厦门大学 一种微器件的真空封装方法
JP2015084348A (ja) * 2012-02-13 2015-04-30 長州産業株式会社 光起電力素子及びその製造方法
TWI624862B (zh) * 2012-06-11 2018-05-21 應用材料股份有限公司 在脈衝式雷射退火中使用紅外線干涉技術之熔化深度測定
CN103521919B (zh) * 2013-10-15 2016-06-22 江苏大学 一种可实现水下激光焊接和激光喷丸的方法和组合装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4238826C1 (de) 1992-11-17 1994-04-28 Microlas Lasersystem Gmbh Vorrichtung zum Bestrahlen eines Substrates
US6797651B2 (en) 2001-02-22 2004-09-28 Sanyo Electric Co., Ltd. Method for manufacturing polycrystalline semiconductor layers and thin-film transistors and laser annealing apparatus

Also Published As

Publication number Publication date
CN105895555A (zh) 2016-08-24
AT516786B1 (de) 2021-05-15
CN105895555B (zh) 2021-09-07
TW201705370A (zh) 2017-02-01
AT516786A3 (de) 2021-01-15
AT516786A2 (de) 2016-08-15
TWI703677B (zh) 2020-09-01

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