JP6967954B2 - 排気装置、処理装置及び排気方法 - Google Patents
排気装置、処理装置及び排気方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 37
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- 238000013459 approach Methods 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H01J37/32623—Mechanical discharge control means
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- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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Description
まず、本発明の一実施形態に係るバッチ型の処理装置と、比較例に係るバッチ型の処理装置とを比較して説明する。図1(a)は比較例に係るバッチ型の処理装置9の一例であり、図1(b)は本発明の一実施形態に係るバッチ型の処理装置1の一例である。
動翼及び静翼の配置と動作について、図2及び図3を参照しながら説明する。図2(a)は、図1のA1−A1断面を示す図である。図2(b)は、図1のA2−A2断面を示す図である。図3は、図1のB−B断面を示す図である。
次に、排気装置の変形例について図4を参照しながら説明する。図4は、本実施形態の変形例1〜3に係る排気装置を搭載した処理装置1の一例を示す図である。図4(a)は、本実施形態の変形例1に係る排気装置を搭載した処理装置1を示す図である。変形例1に係る処理装置1では、排気装置は、排気機構3とAPC19とターボ分子ポンプ20に加えて、排気機構3の上流側にバッフル板21,22を有する。バッフル板21,22は、処理室101、102毎に載置台12,13を囲むようにそれぞれ設けられる。バッフル板21,22は、排気機構3の上方にて、ウェハWを処理する処理空間(処理室101,102)と排気空間17,18とに処理容器10内を仕切る。バッフル板21,22には複数の貫通孔が形成されている。
次に、本実施形態に係る排気装置を搭載した処理装置1において実行される排気方法の一例について図5を参照しながら説明する。図5は、一実施形態に係る排気処理の一例を示すフローチャートである。本処理は制御部50により制御される。
次に、本実施形態に係るバッチ型の処理装置1の、搬入及び搬出時のウェハWの搬送について、図6〜図9を参照しながら説明する。図6〜図9は、本実施形態に係る処理装置1の搬入及び搬出時のウェハの搬送の一例を示す図である。
3 排気機構
10 処理容器
12、13 載置台
14,15 高周波電源
16 ガス供給部
17,18 排気空間
19 APC
20 ターボ分子ポンプ
21、22 バッフル板
23,24 ガスシャワーヘッド
26,27 給電棒
28 搬入出口
29 壁
30、32 動翼
30a 第1のブレード
30b 第1の基材
31、33 静翼
31a 第2のブレード
31b 第2の基材
40,41 シールド部材
50 制御部
101,102 処理室
Claims (4)
- 真空雰囲気の処理空間にて被処理体に処理を施す処理容器の排気空間において、被処理体よりも外周側に同軸的に配置され、少なくとも一方は回転可能な第1の翼部材と第2の翼部材とを有する排気機構と、
前記排気空間に連通し、前記排気機構の下流側にて前記処理容器内の排気を行う排気部とを有し、
前記処理容器は、前記処理空間を複数の処理室に隔離する壁を有し、前記処理容器の壁には、前記複数の処理室に対応して複数の被処理体の搬入出口が形成され、
前記排気機構は、前記複数の処理室のそれぞれに設けられ、
更に、前記複数の処理室の搬入出口に対応して前記処理容器の壁面に沿って設けられる複数のシールド部材と、
前記複数の処理室に対応して各処理室と前記排気空間とを仕切る、複数の貫通孔が形成された複数のバッフル板と、を有し、
前記複数のシールド部材と前記バッフル板とは、上下に移動又は回転し、前記搬入出口を開閉する、処理装置。 - 前記第1の翼部材は、被処理体の外縁を囲む内部空間を有する第1の基材に外向きに複数の第1のブレードが設けられ、前記第2の翼部材は、前記第1の翼部材を囲む内部空間を有する第2の基材に内向きに複数の第2のブレードが設けられ、
被処理体が載置される載置台の下方は、前記第1の基材及び前記第2の基材の内部空間を貫通する前記処理容器と前記載置台とにより大気空間となっている、
請求項1に記載の処理装置。 - 真空雰囲気の処理空間にて被処理体に処理を施す処理容器の排気空間であって、前記処理容器を複数の処理室に隔離する壁を有する前記処理容器の排気空間において、前記複数の処理室内に載置された複数の被処理体のそれぞれの外周側に同軸的に配置された第1の翼部材と第2の翼部材の組のそれぞれに対して、該第1の翼部材と第2の翼部材の少なくとも一方を回転させ、
前記排気空間に連通し、前記第1の翼部材と前記第2の翼部材の下流側に配置された排気部により前記処理容器内の排気を行い、
所定の条件に基づき、前記回転させる前記第1の翼部材と第2の翼部材との少なくとも一方の単位時間当たりの回転数を変化させ、
前記複数の処理室の圧力を測定し、
前記測定した複数の処理室の圧力の差圧に応じて、各処理室において前記第1の翼部材と第2の翼部材の少なくとも一方の回転をそれぞれ独立して制御する、排気方法。 - 所定の条件は、被処理体を処理するプロセス条件、ガスの給気のタイミング及びガスの排気のタイミングの少なくともいずれかである、
請求項3に記載の排気方法。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017233152A JP6967954B2 (ja) | 2017-12-05 | 2017-12-05 | 排気装置、処理装置及び排気方法 |
TW112102656A TW202324494A (zh) | 2017-12-05 | 2018-11-29 | 電漿處理裝置 |
TW107142626A TWI794346B (zh) | 2017-12-05 | 2018-11-29 | 排氣裝置、處理裝置及排氣方法 |
US16/205,558 US11315770B2 (en) | 2017-12-05 | 2018-11-30 | Exhaust device for processing apparatus provided with multiple blades |
CN201811464877.0A CN110010437B (zh) | 2017-12-05 | 2018-12-03 | 排气装置、处理装置以及排气方法 |
CN202110735397.9A CN113594018A (zh) | 2017-12-05 | 2018-12-03 | 等离子体处理装置 |
KR1020180154550A KR102666761B1 (ko) | 2017-12-05 | 2018-12-04 | 배기 장치, 처리 장치 및 배기 방법 |
US17/342,668 US20210296102A1 (en) | 2017-12-05 | 2021-06-09 | Exhaust device, processing apparatus, and exhausting method |
JP2021174606A JP7204857B2 (ja) | 2017-12-05 | 2021-10-26 | プラズマ処理装置 |
KR1020240061627A KR20240070490A (ko) | 2017-12-05 | 2024-05-10 | 배기 장치, 처리 장치 및 배기 방법 |
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JP2017233152A JP6967954B2 (ja) | 2017-12-05 | 2017-12-05 | 排気装置、処理装置及び排気方法 |
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JP2019102680A JP2019102680A (ja) | 2019-06-24 |
JP2019102680A5 JP2019102680A5 (ja) | 2020-10-08 |
JP6967954B2 true JP6967954B2 (ja) | 2021-11-17 |
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US20210296102A1 (en) | 2021-09-23 |
KR20240070490A (ko) | 2024-05-21 |
US11315770B2 (en) | 2022-04-26 |
CN113594018A (zh) | 2021-11-02 |
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TW202324494A (zh) | 2023-06-16 |
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