KR101825751B1 - 가공 방법 - Google Patents

가공 방법 Download PDF

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Publication number
KR101825751B1
KR101825751B1 KR1020120078181A KR20120078181A KR101825751B1 KR 101825751 B1 KR101825751 B1 KR 101825751B1 KR 1020120078181 A KR1020120078181 A KR 1020120078181A KR 20120078181 A KR20120078181 A KR 20120078181A KR 101825751 B1 KR101825751 B1 KR 101825751B1
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KR
South Korea
Prior art keywords
holding
protective tape
workpiece
wafer
wheel
Prior art date
Application number
KR1020120078181A
Other languages
English (en)
Korean (ko)
Other versions
KR20130011945A (ko
Inventor
마사유키 가와세
미츠루 이쿠시마
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20130011945A publication Critical patent/KR20130011945A/ko
Application granted granted Critical
Publication of KR101825751B1 publication Critical patent/KR101825751B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
KR1020120078181A 2011-07-20 2012-07-18 가공 방법 KR101825751B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-158895 2011-07-20
JP2011158895A JP5890977B2 (ja) 2011-07-20 2011-07-20 加工方法

Publications (2)

Publication Number Publication Date
KR20130011945A KR20130011945A (ko) 2013-01-30
KR101825751B1 true KR101825751B1 (ko) 2018-02-05

Family

ID=47530610

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120078181A KR101825751B1 (ko) 2011-07-20 2012-07-18 가공 방법

Country Status (4)

Country Link
JP (1) JP5890977B2 (zh)
KR (1) KR101825751B1 (zh)
CN (1) CN102886829B (zh)
TW (1) TWI534879B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6125357B2 (ja) * 2013-07-08 2017-05-10 株式会社ディスコ ウエーハの加工方法
JP2015041687A (ja) * 2013-08-21 2015-03-02 株式会社ディスコ ウエーハの加工方法
CN105448750A (zh) * 2014-08-28 2016-03-30 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置
KR101532591B1 (ko) * 2015-02-02 2015-06-30 에이피텍(주) 두께 정밀 가공이 가능한 반도체용 알루미늄 기판 평면 절삭 가공 장치
CN106206383A (zh) * 2016-09-05 2016-12-07 江苏纳沛斯半导体有限公司 薄膜形成方法和半导体结构
JP6720043B2 (ja) * 2016-10-05 2020-07-08 株式会社ディスコ 加工方法
JP6999322B2 (ja) * 2017-07-31 2022-01-18 株式会社ディスコ ウエーハの研削方法
KR102005191B1 (ko) * 2018-05-03 2019-07-29 일윤주식회사 Led패키지용 형광층 평탄화 장치
JPWO2022158485A1 (zh) * 2021-01-21 2022-07-28
CN113070803A (zh) * 2021-04-30 2021-07-06 天津亿众飞扬科技有限公司 一种半自动金属字面打磨抛光机

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182015A (ja) * 2007-01-24 2008-08-07 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2009043931A (ja) * 2007-08-08 2009-02-26 Disco Abrasive Syst Ltd ウェーハの裏面研削方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4249827B2 (ja) * 1998-12-04 2009-04-08 株式会社ディスコ 半導体ウェーハの製造方法
JP4465760B2 (ja) * 1999-12-14 2010-05-19 富士電機システムズ株式会社 縦型半導体装置の製造方法
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
JP2004311576A (ja) * 2003-04-03 2004-11-04 Toshiba Corp 半導体装置の製造方法
JP4261260B2 (ja) * 2003-06-26 2009-04-30 日東電工株式会社 半導体ウエハの研削方法および半導体ウエハ研削用粘着シート
JP4416108B2 (ja) * 2003-11-17 2010-02-17 株式会社ディスコ 半導体ウェーハの製造方法
JP2009004406A (ja) * 2007-06-19 2009-01-08 Disco Abrasive Syst Ltd 基板の加工方法
JP2009054920A (ja) * 2007-08-29 2009-03-12 Disco Abrasive Syst Ltd 半導体ウェーハの加工方法
JP2011109067A (ja) * 2009-10-19 2011-06-02 Denso Corp 半導体装置の製造方法
JP5500942B2 (ja) * 2009-10-28 2014-05-21 株式会社ディスコ ウエーハの加工方法
JP2011108746A (ja) * 2009-11-13 2011-06-02 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5877663B2 (ja) * 2011-07-07 2016-03-08 株式会社ディスコ ウエーハの研削方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182015A (ja) * 2007-01-24 2008-08-07 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2009043931A (ja) * 2007-08-08 2009-02-26 Disco Abrasive Syst Ltd ウェーハの裏面研削方法

Also Published As

Publication number Publication date
JP5890977B2 (ja) 2016-03-22
KR20130011945A (ko) 2013-01-30
CN102886829A (zh) 2013-01-23
JP2013026380A (ja) 2013-02-04
TW201308415A (zh) 2013-02-16
TWI534879B (zh) 2016-05-21
CN102886829B (zh) 2016-05-11

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