KR101662028B1 - 기판의 패터닝 방법 및 시스템 - Google Patents

기판의 패터닝 방법 및 시스템 Download PDF

Info

Publication number
KR101662028B1
KR101662028B1 KR1020127007102A KR20127007102A KR101662028B1 KR 101662028 B1 KR101662028 B1 KR 101662028B1 KR 1020127007102 A KR1020127007102 A KR 1020127007102A KR 20127007102 A KR20127007102 A KR 20127007102A KR 101662028 B1 KR101662028 B1 KR 101662028B1
Authority
KR
South Korea
Prior art keywords
substrate
resist
particles
layer
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127007102A
Other languages
English (en)
Korean (ko)
Other versions
KR20120046311A (ko
Inventor
패트릭 엠. 마틴
스티븐 디. 칼슨
오다니엘
박정욱
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20120046311A publication Critical patent/KR20120046311A/ko
Application granted granted Critical
Publication of KR101662028B1 publication Critical patent/KR101662028B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
KR1020127007102A 2009-08-20 2010-08-20 기판의 패터닝 방법 및 시스템 Expired - Fee Related KR101662028B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23538309P 2009-08-20 2009-08-20
US61/235,383 2009-08-20
US12/859,606 US8912097B2 (en) 2009-08-20 2010-08-19 Method and system for patterning a substrate
US12/859,606 2010-08-19
PCT/US2010/046146 WO2011022635A2 (en) 2009-08-20 2010-08-20 Methods and system for patterning a substrate

Publications (2)

Publication Number Publication Date
KR20120046311A KR20120046311A (ko) 2012-05-09
KR101662028B1 true KR101662028B1 (ko) 2016-10-05

Family

ID=43063371

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127007102A Expired - Fee Related KR101662028B1 (ko) 2009-08-20 2010-08-20 기판의 패터닝 방법 및 시스템

Country Status (6)

Country Link
US (1) US8912097B2 (https=)
JP (1) JP5716026B2 (https=)
KR (1) KR101662028B1 (https=)
CN (1) CN102498543B (https=)
TW (1) TW201129882A (https=)
WO (1) WO2011022635A2 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8778603B2 (en) 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
US8883649B2 (en) 2011-03-23 2014-11-11 International Business Machines Corporation Sidewall image transfer process
KR20130015145A (ko) * 2011-08-02 2013-02-13 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
WO2013111812A1 (ja) * 2012-01-27 2013-08-01 旭化成株式会社 微細凹凸構造体、ドライエッチング用熱反応型レジスト材料、モールドの製造方法及びモールド
CN103456606B (zh) * 2012-06-04 2016-04-06 中芯国际集成电路制造(上海)有限公司 一种用于形成硬掩膜层的方法
US8716133B2 (en) * 2012-08-23 2014-05-06 International Business Machines Corporation Three photomask sidewall image transfer method
CN103681232B (zh) * 2012-09-04 2017-06-13 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US9128384B2 (en) 2012-11-09 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a pattern
FR3000601B1 (fr) * 2012-12-28 2016-12-09 Commissariat Energie Atomique Procede de formation des espaceurs d'une grille d'un transistor
WO2014159427A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc Resist hardening and development processes for semiconductor device manufacturing
US9541846B2 (en) 2013-09-06 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Homogeneous thermal equalization with active device
CN104517813A (zh) * 2013-09-29 2015-04-15 中芯国际集成电路制造(上海)有限公司 双重图形的形成方法
US20150187915A1 (en) * 2013-12-26 2015-07-02 Samsung Electronics Co., Ltd. Method for fabricating fin type transistor
KR102185281B1 (ko) * 2014-01-09 2020-12-01 삼성전자 주식회사 자기 정렬 더블 패터닝 공정을 이용하여 반도체 소자의 패턴을 형성하는 방법
JP2015141929A (ja) 2014-01-27 2015-08-03 マイクロン テクノロジー， インク． 半導体装置及びその製造方法
US9754785B2 (en) 2015-01-14 2017-09-05 Samsung Electronics Co., Ltd. Methods of manufacturing semiconductor devices
KR102323251B1 (ko) 2015-01-21 2021-11-09 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조방법
KR102343859B1 (ko) * 2015-01-29 2021-12-28 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US9941125B2 (en) 2015-08-31 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
KR102323660B1 (ko) 2015-10-13 2021-11-08 삼성전자주식회사 반도체 소자 제조 방법
US9984889B2 (en) * 2016-03-08 2018-05-29 Varian Semiconductor Equipment Associates, Inc. Techniques for manipulating patterned features using ions
KR102216380B1 (ko) * 2016-12-08 2021-02-17 주식회사 원익아이피에스 반도체 소자의 패터닝 방법
US10545408B2 (en) 2017-08-18 2020-01-28 Varian Semiconductor Equipment Associates, Inc. Performance improvement of EUV photoresist by ion implantation
US10354874B2 (en) 2017-11-14 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Directional processing to remove a layer or a material formed over a substrate
US10312089B1 (en) * 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for controlling an end-to-end distance in semiconductor device
US20190198325A1 (en) 2017-12-22 2019-06-27 International Business Machines Corporation Extreme ultraviolet (euv) lithography patterning methods utilizing euv resist hardening
CN110528003B (zh) * 2018-05-25 2020-10-27 北京航空航天大学 一种涂层的复合制备方法
WO2020209939A1 (en) * 2019-04-08 2020-10-15 Applied Materials, Inc. Methods for modifying photoresist profiles and tuning critical dimensions
KR20240000897A (ko) 2022-06-24 2024-01-03 삼성전자주식회사 반도체 장치 제조 방법
TWI847663B (zh) * 2023-04-24 2024-07-01 南亞科技股份有限公司 半導體結構的形成方法
TWI885942B (zh) * 2023-04-24 2025-06-01 南亞科技股份有限公司 半導體結構的形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000235969A (ja) 1999-02-15 2000-08-29 Sony Corp 半導体装置の製造方法
JP2001265011A (ja) * 2000-03-17 2001-09-28 Sanyo Electric Co Ltd 半導体装置の製造方法
US20080305443A1 (en) * 2007-06-11 2008-12-11 Hiroko Nakamura Pattern forming method using relacs process

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3317582B2 (ja) * 1994-06-01 2002-08-26 菱電セミコンダクタシステムエンジニアリング株式会社 微細パターンの形成方法
US5876903A (en) 1996-12-31 1999-03-02 Advanced Micro Devices Virtual hard mask for etching
JPH1126356A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体装置の製造方法
US6423475B1 (en) 1999-03-11 2002-07-23 Advanced Micro Devices, Inc. Sidewall formation for sidewall patterning of sub 100 nm structures
US6645677B1 (en) * 2000-09-18 2003-11-11 Micronic Laser Systems Ab Dual layer reticle blank and manufacturing process
US6864144B2 (en) 2002-05-30 2005-03-08 Intel Corporation Method of stabilizing resist material through ion implantation
US6653735B1 (en) 2002-07-30 2003-11-25 Advanced Micro Devices, Inc. CVD silicon carbide layer as a BARC and hard mask for gate patterning
JP2004157424A (ja) * 2002-11-08 2004-06-03 Sony Corp レジストの剥離方法及び半導体装置の製造方法
DE102004058412B4 (de) * 2004-12-03 2017-03-02 Austriamicrosystems Ag Mehrfachmaske und Verfahren zur Herstellung unterschiedlich dotierter Gebiete und Verwendung des Verfahrens
KR100925029B1 (ko) 2006-12-27 2009-11-03 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100891247B1 (ko) * 2007-05-14 2009-04-01 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
KR100858877B1 (ko) 2007-08-13 2008-09-17 주식회사 하이닉스반도체 반도체 소자 제조 방법
US8030218B2 (en) * 2008-03-21 2011-10-04 Micron Technology, Inc. Method for selectively modifying spacing between pitch multiplied structures
US8273634B2 (en) * 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000235969A (ja) 1999-02-15 2000-08-29 Sony Corp 半導体装置の製造方法
JP2001265011A (ja) * 2000-03-17 2001-09-28 Sanyo Electric Co Ltd 半導体装置の製造方法
US20080305443A1 (en) * 2007-06-11 2008-12-11 Hiroko Nakamura Pattern forming method using relacs process

Also Published As

Publication number Publication date
WO2011022635A3 (en) 2011-04-21
US20110300711A1 (en) 2011-12-08
KR20120046311A (ko) 2012-05-09
WO2011022635A2 (en) 2011-02-24
US8912097B2 (en) 2014-12-16
CN102498543A (zh) 2012-06-13
CN102498543B (zh) 2015-01-21
JP2013502726A (ja) 2013-01-24
TW201129882A (en) 2011-09-01
JP5716026B2 (ja) 2015-05-13

Similar Documents

Publication Publication Date Title
KR101662028B1 (ko) 기판의 패터닝 방법 및 시스템
JP2013502726A5 (https=)
CN100477125C (zh) 形成非对称侧壁间隔物的方法
US6482726B1 (en) Control trimming of hard mask for sub-100 nanometer transistor gate
US9748148B2 (en) Localized stress modulation for overlay and EPE
WO2011116039A1 (en) Method and system for modifying substrate patterned features using ion implantation
US6472280B2 (en) Method for forming a spacer for semiconductor manufacture
JP2013527595A5 (https=)
US20190384180A1 (en) Extreme ultraviolet (euv) lithography patterning methods utilizing euv resist hardening
US6586303B2 (en) Method for fabricating a mask ROM
JP4745121B2 (ja) 半導体装置製造におけるパターン形成方法
US6531365B2 (en) Anti-spacer structure for self-aligned independent gate implantation
KR100717409B1 (ko) 반사-방지 코팅으로 반도체 메모리 디바이스를 제조하는방법
JP3459658B2 (ja) 局所的埋込み注入及び分離構成体へ適用可能な超高エネルギ注入用の自己整合型マスキング
KR101019987B1 (ko) 상변화 메모리 소자의 다이오드 형성방법
KR20130124149A (ko) 이온 주입을 사용하는 기판 패턴화된 특징부들의 수정 방법 및 시스템
US6689663B1 (en) Methods of code programming a mask ROM
US6875659B2 (en) Methods of code programming a mask ROM
KR20090009388A (ko) 반도체 소자의 제조방법
TW563188B (en) Semiconductor device and method of manufacturing the same
US7144820B2 (en) Method of manufacturing a layer sequence and a method of manufacturing an integrated circuit
CN100395844C (zh) 编码程序化掩膜式只读存储器的方法
JP2001265011A (ja) 半導体装置の製造方法
US20230420255A1 (en) Method of manufacturing semiconductor device
KR100720404B1 (ko) 반도체 소자의 제조방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

A302 Request for accelerated examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

X091 Application refused [patent]
T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20190902

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20200901

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20210820

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20220822

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20240928

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20240928

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20240928

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000