JP2013502726A - 基板のパターニング方法及びそのシステム - Google Patents
基板のパターニング方法及びそのシステム Download PDFInfo
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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Abstract
Description
Claims (21)
- 隣接するレジストフィーチャー間の第1ピッチと第1ギャップ幅により画定されるレジストフィーチャーの配列を設け、各レジストフィーチャーが上部及び側部を有する工程と、
前記レジストフィーチャーの配列に粒子を取り込ませ、前記レジストフィーチャーの配列が硬化する工程と、
前記硬化したレジストフィーチャーの配列の前記側部にサイドウォールを設ける工程と、
前記硬化したレジストフィーチャーの配列を除去し、前記基板上に配置され、分離したサイドウォールの配列が形成される工程と、を具える基板のパターニング方法。 - 前記サイドウォールを設ける工程は、
前記上部及び前記側部にスペーサー層を設ける工程、及び、前記スペーサー層の一部を除去し、前記上部及び前記基板を露出する工程を含む請求項1に記載の方法。 - 前記方法は、
前記基板の露出した部分をエッチングする工程と、
前記サイドウォールを除去する工程と、をさらに具え、
前記エッチングされた基板が、前記第1ピッチの半分に相当する第2ピッチをもつ基板フィーチャーの配列を有する請求項1に記載の方法。 - 前記基板が、
第1表面からなる上面を有するSiON材料を含む上層と、
該上層の下に配置されたカーボン材料を含む中間層と、
該中間層の下に配置されたハードマスク層と、
該ハードマスク層の下に配置された前記基板の下部と、
該基板の下部の下に配置された前記基板の底部と、を具える請求項3に記載の方法。 - 前記基板がシリコンウエハーからなり、
前記下部が、ポリシリコン層、金属層及び絶縁層のうちの一種又は二種以上を含み、
前記基板フィーチャーの配列が、ポリシリコン、金属及び絶縁物のうちの一種又は二種以上を含む請求項4に記載の方法。 - 前記粒子は、荷電粒子及び非荷電粒子のうちの一種であって、前記粒子が亜原子粒子、原子粒子及び分子粒子のうちの一種である請求項1に記載の方法。
- 前記粒子は、ビームラインイオン注入方式、プラズマアシスト添加(PLAD)方式、プラズマイオン注入(PILL)方式、ファーネス、化学気相成長(CVD)方式、プラズマ化学気相成長(PECVD)方式、原子層成長(ALD)方式及び分子線エピタキシー(MBE)方式のうちの一つの手段によって、前記レジストフィーチャーの配列に取り込まれる請求項6に記載の方法。
- 前記粒子は、パターンの施されたレジストに取り込まれる際、およそ100eV〜100keVの範囲の運動エネルギーを有する請求項6に記載の方法。
- 前記粒子は、前記基板に対して傾斜角をもって取り込まれる請求項6に記載の方法。
- 前記粒子が、ヘリウム(He)、ネオン(Ne)、アルゴン(Ar)、クリプトン(Kr)、キセノン (Xe)、ラドン(Rn)、窒素(N)、酸素(O)、ケイ素(Si)、ホウ素(B)、水素(H)、炭素(C)、 鉄(Fe), リチウム(Li)、クロム(Cr)、ニッケル(Ni), ヒ素(As)及びカルボランのうちの一種である請求項6に記載の方法。
- 前記基板がシリコンを含み、前記粒子がヘリウム(He)、ネオン(Ne)、アルゴン(Ar)、クリプトン(Kr)、キセノン (Xe)、ラドン(Rn)、窒素(N)及び酸素(O) のうちの一種である請求項9に記載の方法。
- 前記粒子の運動エネルギー及び前記傾斜角を設定して、前記側部と前記上部に沿って配置される硬化した外周部と、該外周部及び前記基板により画定される領域の内側に配置される実質的には硬化していない内部とを有する硬化したレジストフィーチャーを形成する請求項9に記載の方法。
- 前記粒子の運動エネルギー及び前記傾斜角を設定して、前記レジストフィーチャーの限界寸法の大幅な縮小をもたらし、前記粒子が前記レジストフィーチャーの配列に取り込まれた後、隣接する前記レジストフィーチャーは、第1ギャップ幅よりも大きい第2ギャップ幅によって分離される請求項9に記載の方法。
- 第1ピリオドの間に、前記粒子が前記基板に対して第1ねじり角をもって取り込まれる請求項9に記載の方法。
- 前記第1ピリオドの後、これに続く一又は二以上の各ピリオドにおいて、第2ねじり角を形成するため前記基板が回転され、該第2ねじり角は、第1ねじり角との間に0°以上〜およそ90°の角度を形成する請求項14に記載の方法。
- 前記基板が、
前記第1表面からなる上面を有する反射防止層と、
該反射防止層の下に配置されたSiON材料を含む上層と、
該上層の下に配置されたカーボン材料を含む中間層と、
該中間層の下に配置されたハードマスク層と、
該ハードマスク層の下に配置された前記基板の下部と、
該基板の下部の下に配置された前記基板の底部と、を具える請求項3に記載の方法。 - 隣接するレジストフィーチャー間の第1ピッチと少なくとも第1ギャップ幅により画定されるレジストフィーチャーの配列を設け、各レジストフィーチャーが上部及び側部を有する工程と、
傾斜角がおよそ5〜85°、ねじり角がおよそ5〜85°で粒子の流束を受けるよう基板を設定する工程と、
高温でのプロセスに耐えうるレジストフィーチャーの硬化した外周部の層を形成するのに十分な粒子の運動エネルギー及びドーズ量を規定する工程と、
前記レジストフィーチャーの限界寸法の大幅な縮小をもたらすよう十分な粒子の流束を規定し、粒子の流束にさらされた後、隣接する前記レジストフィーチャーが前記第1ギャップ幅よりも大きい第2ギャップ幅によって分離される工程と、を具える基板のパターニング方法。 - 前記方法は、
前記レジストフィーチャーの縮小が横方向優先となるよう前記傾斜角及びねじり角を設定する工程、及び
レジストフィーチャーの硬さが非対称になるよう前記傾斜角及びねじり角を設定する工程、のうち一又は二以上をさらに具える請求項17に記載の方法。 - レジストフィーチャーの配列についてCD値のセットを受けるように設定され、該レジストフィーチャーの配列が隣接するレジストフィーチャー間の第1ピッチと少なくとも第1ギャップ幅により画定され、各レジストフィーチャーが上部及び側部を有するユーザーインターフェイスと、
CD値の該セットに基づき、粒子照射パラメータのセットをディスプレイに出力する操作が可能であり、該照射パラメータが、基板との傾斜角、基板とのねじり角、粒子のエネルギー及び粒子のドーズ量のうちの一又は二以上を含むプログラムと、を具える基板のパターニングを制御するためのコンピュータシステム。 - 前記コンピュータシステムが、粒子照射を実行するために設定されたツールへ前記照射パラメータを自動的に出力するよう設定された請求項19に記載のコンピュータシステム。
- 前記ユーザーインターフェイスが、さらに熱パラメータのセットを受けるように設定され、前記プログラムが、該熱パラメータにより前記粒子照射パラメータを調整するように設定された請求項19記載のコンピュータシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23538309P | 2009-08-20 | 2009-08-20 | |
US61/235,383 | 2009-08-20 | ||
US12/859,606 US8912097B2 (en) | 2009-08-20 | 2010-08-19 | Method and system for patterning a substrate |
US12/859,606 | 2010-08-19 | ||
PCT/US2010/046146 WO2011022635A2 (en) | 2009-08-20 | 2010-08-20 | Methods and system for patterning a substrate |
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JP2013502726A true JP2013502726A (ja) | 2013-01-24 |
JP2013502726A5 JP2013502726A5 (ja) | 2013-08-22 |
JP5716026B2 JP5716026B2 (ja) | 2015-05-13 |
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US (1) | US8912097B2 (ja) |
JP (1) | JP5716026B2 (ja) |
KR (1) | KR101662028B1 (ja) |
CN (1) | CN102498543B (ja) |
TW (1) | TW201129882A (ja) |
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US9318416B2 (en) | 2014-01-27 | 2016-04-19 | Micron Technology, Inc. | Semiconductor device including conductive layer with conductive plug |
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US20110300711A1 (en) | 2011-12-08 |
WO2011022635A3 (en) | 2011-04-21 |
US8912097B2 (en) | 2014-12-16 |
JP5716026B2 (ja) | 2015-05-13 |
CN102498543A (zh) | 2012-06-13 |
TW201129882A (en) | 2011-09-01 |
KR20120046311A (ko) | 2012-05-09 |
WO2011022635A2 (en) | 2011-02-24 |
CN102498543B (zh) | 2015-01-21 |
KR101662028B1 (ko) | 2016-10-05 |
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