CN102498543B - 图案化基底的方法 - Google Patents

图案化基底的方法 Download PDF

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Publication number
CN102498543B
CN102498543B CN201080040495.0A CN201080040495A CN102498543B CN 102498543 B CN102498543 B CN 102498543B CN 201080040495 A CN201080040495 A CN 201080040495A CN 102498543 B CN102498543 B CN 102498543B
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CN
China
Prior art keywords
resist
particle
substrate
layer
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201080040495.0A
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English (en)
Chinese (zh)
Other versions
CN102498543A (zh
Inventor
派崔克·M·马汀
史蒂芬·D·卡尔森
丹尼尔·吴
朴正旭
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication of CN102498543A publication Critical patent/CN102498543A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
CN201080040495.0A 2009-08-20 2010-08-20 图案化基底的方法 Expired - Fee Related CN102498543B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23538309P 2009-08-20 2009-08-20
US61/235,383 2009-08-20
US12/859,606 US8912097B2 (en) 2009-08-20 2010-08-19 Method and system for patterning a substrate
US12/859,606 2010-08-19
PCT/US2010/046146 WO2011022635A2 (en) 2009-08-20 2010-08-20 Methods and system for patterning a substrate

Publications (2)

Publication Number Publication Date
CN102498543A CN102498543A (zh) 2012-06-13
CN102498543B true CN102498543B (zh) 2015-01-21

Family

ID=43063371

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080040495.0A Expired - Fee Related CN102498543B (zh) 2009-08-20 2010-08-20 图案化基底的方法

Country Status (6)

Country Link
US (1) US8912097B2 (https=)
JP (1) JP5716026B2 (https=)
KR (1) KR101662028B1 (https=)
CN (1) CN102498543B (https=)
TW (1) TW201129882A (https=)
WO (1) WO2011022635A2 (https=)

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US8778603B2 (en) 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
US8883649B2 (en) 2011-03-23 2014-11-11 International Business Machines Corporation Sidewall image transfer process
KR20130015145A (ko) * 2011-08-02 2013-02-13 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
WO2013111812A1 (ja) * 2012-01-27 2013-08-01 旭化成株式会社 微細凹凸構造体、ドライエッチング用熱反応型レジスト材料、モールドの製造方法及びモールド
CN103456606B (zh) * 2012-06-04 2016-04-06 中芯国际集成电路制造(上海)有限公司 一种用于形成硬掩膜层的方法
US8716133B2 (en) * 2012-08-23 2014-05-06 International Business Machines Corporation Three photomask sidewall image transfer method
CN103681232B (zh) * 2012-09-04 2017-06-13 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US9128384B2 (en) 2012-11-09 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a pattern
FR3000601B1 (fr) * 2012-12-28 2016-12-09 Commissariat Energie Atomique Procede de formation des espaceurs d'une grille d'un transistor
WO2014159427A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc Resist hardening and development processes for semiconductor device manufacturing
US9541846B2 (en) 2013-09-06 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Homogeneous thermal equalization with active device
CN104517813A (zh) * 2013-09-29 2015-04-15 中芯国际集成电路制造(上海)有限公司 双重图形的形成方法
US20150187915A1 (en) * 2013-12-26 2015-07-02 Samsung Electronics Co., Ltd. Method for fabricating fin type transistor
KR102185281B1 (ko) * 2014-01-09 2020-12-01 삼성전자 주식회사 자기 정렬 더블 패터닝 공정을 이용하여 반도체 소자의 패턴을 형성하는 방법
JP2015141929A (ja) 2014-01-27 2015-08-03 マイクロン テクノロジー， インク． 半導体装置及びその製造方法
US9754785B2 (en) 2015-01-14 2017-09-05 Samsung Electronics Co., Ltd. Methods of manufacturing semiconductor devices
KR102323251B1 (ko) 2015-01-21 2021-11-09 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조방법
KR102343859B1 (ko) * 2015-01-29 2021-12-28 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US9941125B2 (en) 2015-08-31 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
KR102323660B1 (ko) 2015-10-13 2021-11-08 삼성전자주식회사 반도체 소자 제조 방법
US9984889B2 (en) * 2016-03-08 2018-05-29 Varian Semiconductor Equipment Associates, Inc. Techniques for manipulating patterned features using ions
KR102216380B1 (ko) * 2016-12-08 2021-02-17 주식회사 원익아이피에스 반도체 소자의 패터닝 방법
US10545408B2 (en) 2017-08-18 2020-01-28 Varian Semiconductor Equipment Associates, Inc. Performance improvement of EUV photoresist by ion implantation
US10354874B2 (en) 2017-11-14 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Directional processing to remove a layer or a material formed over a substrate
US10312089B1 (en) * 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for controlling an end-to-end distance in semiconductor device
US20190198325A1 (en) 2017-12-22 2019-06-27 International Business Machines Corporation Extreme ultraviolet (euv) lithography patterning methods utilizing euv resist hardening
CN110528003B (zh) * 2018-05-25 2020-10-27 北京航空航天大学 一种涂层的复合制备方法
WO2020209939A1 (en) * 2019-04-08 2020-10-15 Applied Materials, Inc. Methods for modifying photoresist profiles and tuning critical dimensions
KR20240000897A (ko) 2022-06-24 2024-01-03 삼성전자주식회사 반도체 장치 제조 방법
TWI847663B (zh) * 2023-04-24 2024-07-01 南亞科技股份有限公司 半導體結構的形成方法
TWI885942B (zh) * 2023-04-24 2025-06-01 南亞科技股份有限公司 半導體結構的形成方法

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US5876903A (en) * 1996-12-31 1999-03-02 Advanced Micro Devices Virtual hard mask for etching
US6423475B1 (en) * 1999-03-11 2002-07-23 Advanced Micro Devices, Inc. Sidewall formation for sidewall patterning of sub 100 nm structures
US20030222345A1 (en) * 2002-05-30 2003-12-04 Christopher Kenyon Stabilization of resist material through ion implantation
US20080286954A1 (en) * 2007-05-14 2008-11-20 Hynix Semiconductor Inc. Method of Forming Pattern of Semiconductor Device
US20080305443A1 (en) * 2007-06-11 2008-12-11 Hiroko Nakamura Pattern forming method using relacs process

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JPH1126356A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体装置の製造方法
JP2000235969A (ja) 1999-02-15 2000-08-29 Sony Corp 半導体装置の製造方法
JP2001265011A (ja) * 2000-03-17 2001-09-28 Sanyo Electric Co Ltd 半導体装置の製造方法
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US6653735B1 (en) 2002-07-30 2003-11-25 Advanced Micro Devices, Inc. CVD silicon carbide layer as a BARC and hard mask for gate patterning
JP2004157424A (ja) * 2002-11-08 2004-06-03 Sony Corp レジストの剥離方法及び半導体装置の製造方法
DE102004058412B4 (de) * 2004-12-03 2017-03-02 Austriamicrosystems Ag Mehrfachmaske und Verfahren zur Herstellung unterschiedlich dotierter Gebiete und Verwendung des Verfahrens
KR100925029B1 (ko) 2006-12-27 2009-11-03 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100858877B1 (ko) 2007-08-13 2008-09-17 주식회사 하이닉스반도체 반도체 소자 제조 방법
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Publication number Priority date Publication date Assignee Title
US5876903A (en) * 1996-12-31 1999-03-02 Advanced Micro Devices Virtual hard mask for etching
US6423475B1 (en) * 1999-03-11 2002-07-23 Advanced Micro Devices, Inc. Sidewall formation for sidewall patterning of sub 100 nm structures
US20030222345A1 (en) * 2002-05-30 2003-12-04 Christopher Kenyon Stabilization of resist material through ion implantation
US20080286954A1 (en) * 2007-05-14 2008-11-20 Hynix Semiconductor Inc. Method of Forming Pattern of Semiconductor Device
US20080305443A1 (en) * 2007-06-11 2008-12-11 Hiroko Nakamura Pattern forming method using relacs process

Also Published As

Publication number Publication date
WO2011022635A3 (en) 2011-04-21
US20110300711A1 (en) 2011-12-08
KR20120046311A (ko) 2012-05-09
WO2011022635A2 (en) 2011-02-24
KR101662028B1 (ko) 2016-10-05
US8912097B2 (en) 2014-12-16
CN102498543A (zh) 2012-06-13
JP2013502726A (ja) 2013-01-24
TW201129882A (en) 2011-09-01
JP5716026B2 (ja) 2015-05-13

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