JP5716026B2 - 基板のパターニング方法及びそのシステム - Google Patents

基板のパターニング方法及びそのシステム Download PDF

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JP5716026B2
JP5716026B2 JP2012525726A JP2012525726A JP5716026B2 JP 5716026 B2 JP5716026 B2 JP 5716026B2 JP 2012525726 A JP2012525726 A JP 2012525726A JP 2012525726 A JP2012525726 A JP 2012525726A JP 5716026 B2 JP5716026 B2 JP 5716026B2
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substrate
resist
particles
layer
array
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Japanese (ja)
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JP2013502726A5 (https=
JP2013502726A (ja
Inventor
エム マーティン パトリック
エム マーティン パトリック
ディー カールソン スティーブン
ディー カールソン スティーブン
オー ダニエル
オー ダニエル
パク ジュン−ウック
パク ジュン−ウック
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
JP2012525726A 2009-08-20 2010-08-20 基板のパターニング方法及びそのシステム Expired - Fee Related JP5716026B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23538309P 2009-08-20 2009-08-20
US61/235,383 2009-08-20
US12/859,606 US8912097B2 (en) 2009-08-20 2010-08-19 Method and system for patterning a substrate
US12/859,606 2010-08-19
PCT/US2010/046146 WO2011022635A2 (en) 2009-08-20 2010-08-20 Methods and system for patterning a substrate

Publications (3)

Publication Number Publication Date
JP2013502726A JP2013502726A (ja) 2013-01-24
JP2013502726A5 JP2013502726A5 (https=) 2013-08-22
JP5716026B2 true JP5716026B2 (ja) 2015-05-13

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JP2012525726A Expired - Fee Related JP5716026B2 (ja) 2009-08-20 2010-08-20 基板のパターニング方法及びそのシステム

Country Status (6)

Country Link
US (1) US8912097B2 (https=)
JP (1) JP5716026B2 (https=)
KR (1) KR101662028B1 (https=)
CN (1) CN102498543B (https=)
TW (1) TW201129882A (https=)
WO (1) WO2011022635A2 (https=)

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WO2013111812A1 (ja) * 2012-01-27 2013-08-01 旭化成株式会社 微細凹凸構造体、ドライエッチング用熱反応型レジスト材料、モールドの製造方法及びモールド
CN103456606B (zh) * 2012-06-04 2016-04-06 中芯国际集成电路制造(上海)有限公司 一种用于形成硬掩膜层的方法
US8716133B2 (en) * 2012-08-23 2014-05-06 International Business Machines Corporation Three photomask sidewall image transfer method
CN103681232B (zh) * 2012-09-04 2017-06-13 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US9128384B2 (en) 2012-11-09 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a pattern
FR3000601B1 (fr) * 2012-12-28 2016-12-09 Commissariat Energie Atomique Procede de formation des espaceurs d'une grille d'un transistor
WO2014159427A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc Resist hardening and development processes for semiconductor device manufacturing
US9541846B2 (en) 2013-09-06 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Homogeneous thermal equalization with active device
CN104517813A (zh) * 2013-09-29 2015-04-15 中芯国际集成电路制造(上海)有限公司 双重图形的形成方法
US20150187915A1 (en) * 2013-12-26 2015-07-02 Samsung Electronics Co., Ltd. Method for fabricating fin type transistor
KR102185281B1 (ko) * 2014-01-09 2020-12-01 삼성전자 주식회사 자기 정렬 더블 패터닝 공정을 이용하여 반도체 소자의 패턴을 형성하는 방법
JP2015141929A (ja) 2014-01-27 2015-08-03 マイクロン テクノロジー， インク． 半導体装置及びその製造方法
US9754785B2 (en) 2015-01-14 2017-09-05 Samsung Electronics Co., Ltd. Methods of manufacturing semiconductor devices
KR102323251B1 (ko) 2015-01-21 2021-11-09 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조방법
KR102343859B1 (ko) * 2015-01-29 2021-12-28 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US9941125B2 (en) 2015-08-31 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
KR102323660B1 (ko) 2015-10-13 2021-11-08 삼성전자주식회사 반도체 소자 제조 방법
US9984889B2 (en) * 2016-03-08 2018-05-29 Varian Semiconductor Equipment Associates, Inc. Techniques for manipulating patterned features using ions
KR102216380B1 (ko) * 2016-12-08 2021-02-17 주식회사 원익아이피에스 반도체 소자의 패터닝 방법
US10545408B2 (en) 2017-08-18 2020-01-28 Varian Semiconductor Equipment Associates, Inc. Performance improvement of EUV photoresist by ion implantation
US10354874B2 (en) 2017-11-14 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Directional processing to remove a layer or a material formed over a substrate
US10312089B1 (en) * 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for controlling an end-to-end distance in semiconductor device
US20190198325A1 (en) 2017-12-22 2019-06-27 International Business Machines Corporation Extreme ultraviolet (euv) lithography patterning methods utilizing euv resist hardening
CN110528003B (zh) * 2018-05-25 2020-10-27 北京航空航天大学 一种涂层的复合制备方法
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TWI885942B (zh) * 2023-04-24 2025-06-01 南亞科技股份有限公司 半導體結構的形成方法

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Also Published As

Publication number Publication date
WO2011022635A3 (en) 2011-04-21
US20110300711A1 (en) 2011-12-08
KR20120046311A (ko) 2012-05-09
WO2011022635A2 (en) 2011-02-24
KR101662028B1 (ko) 2016-10-05
US8912097B2 (en) 2014-12-16
CN102498543A (zh) 2012-06-13
CN102498543B (zh) 2015-01-21
JP2013502726A (ja) 2013-01-24
TW201129882A (en) 2011-09-01

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