TW201129882A - Method and system for patterning a substrate - Google Patents

Method and system for patterning a substrate

Info

Publication number
TW201129882A
TW201129882A TW099127942A TW99127942A TW201129882A TW 201129882 A TW201129882 A TW 201129882A TW 099127942 A TW099127942 A TW 099127942A TW 99127942 A TW99127942 A TW 99127942A TW 201129882 A TW201129882 A TW 201129882A
Authority
TW
Taiwan
Prior art keywords
array
features
resist features
substrate
sidewalls
Prior art date
Application number
TW099127942A
Other languages
English (en)
Chinese (zh)
Inventor
Patrick M Martin
Steven Carlson
Daniel Oh
Jung-Wook Park
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW201129882A publication Critical patent/TW201129882A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
TW099127942A 2009-08-20 2010-08-20 Method and system for patterning a substrate TW201129882A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23538309P 2009-08-20 2009-08-20
US12/859,606 US8912097B2 (en) 2009-08-20 2010-08-19 Method and system for patterning a substrate

Publications (1)

Publication Number Publication Date
TW201129882A true TW201129882A (en) 2011-09-01

Family

ID=43063371

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099127942A TW201129882A (en) 2009-08-20 2010-08-20 Method and system for patterning a substrate

Country Status (6)

Country Link
US (1) US8912097B2 (https=)
JP (1) JP5716026B2 (https=)
KR (1) KR101662028B1 (https=)
CN (1) CN102498543B (https=)
TW (1) TW201129882A (https=)
WO (1) WO2011022635A2 (https=)

Cited By (5)

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US9755049B2 (en) 2015-01-21 2017-09-05 Samsung Electronics Co., Ltd. Semiconductor devices including active patterns having different pitches and methods of fabricating the same
TWI677011B (zh) * 2015-01-29 2019-11-11 南韓商三星電子股份有限公司 製造半導體裝置的方法
TWI847663B (zh) * 2023-04-24 2024-07-01 南亞科技股份有限公司 半導體結構的形成方法
TWI885942B (zh) * 2023-04-24 2025-06-01 南亞科技股份有限公司 半導體結構的形成方法
TWI914245B (zh) 2023-04-24 2026-02-01 南亞科技股份有限公司 半導體結構的形成方法

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US8778603B2 (en) 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
US8883649B2 (en) 2011-03-23 2014-11-11 International Business Machines Corporation Sidewall image transfer process
KR20130015145A (ko) * 2011-08-02 2013-02-13 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
WO2013111812A1 (ja) * 2012-01-27 2013-08-01 旭化成株式会社 微細凹凸構造体、ドライエッチング用熱反応型レジスト材料、モールドの製造方法及びモールド
CN103456606B (zh) * 2012-06-04 2016-04-06 中芯国际集成电路制造(上海)有限公司 一种用于形成硬掩膜层的方法
US8716133B2 (en) * 2012-08-23 2014-05-06 International Business Machines Corporation Three photomask sidewall image transfer method
CN103681232B (zh) * 2012-09-04 2017-06-13 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US9128384B2 (en) 2012-11-09 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a pattern
FR3000601B1 (fr) * 2012-12-28 2016-12-09 Commissariat Energie Atomique Procede de formation des espaceurs d'une grille d'un transistor
WO2014159427A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc Resist hardening and development processes for semiconductor device manufacturing
US9541846B2 (en) 2013-09-06 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Homogeneous thermal equalization with active device
CN104517813A (zh) * 2013-09-29 2015-04-15 中芯国际集成电路制造(上海)有限公司 双重图形的形成方法
US20150187915A1 (en) * 2013-12-26 2015-07-02 Samsung Electronics Co., Ltd. Method for fabricating fin type transistor
KR102185281B1 (ko) * 2014-01-09 2020-12-01 삼성전자 주식회사 자기 정렬 더블 패터닝 공정을 이용하여 반도체 소자의 패턴을 형성하는 방법
JP2015141929A (ja) 2014-01-27 2015-08-03 マイクロン テクノロジー， インク． 半導体装置及びその製造方法
US9754785B2 (en) 2015-01-14 2017-09-05 Samsung Electronics Co., Ltd. Methods of manufacturing semiconductor devices
US9941125B2 (en) 2015-08-31 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
KR102323660B1 (ko) 2015-10-13 2021-11-08 삼성전자주식회사 반도체 소자 제조 방법
US9984889B2 (en) * 2016-03-08 2018-05-29 Varian Semiconductor Equipment Associates, Inc. Techniques for manipulating patterned features using ions
KR102216380B1 (ko) * 2016-12-08 2021-02-17 주식회사 원익아이피에스 반도체 소자의 패터닝 방법
US10545408B2 (en) 2017-08-18 2020-01-28 Varian Semiconductor Equipment Associates, Inc. Performance improvement of EUV photoresist by ion implantation
US10354874B2 (en) 2017-11-14 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Directional processing to remove a layer or a material formed over a substrate
US10312089B1 (en) * 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for controlling an end-to-end distance in semiconductor device
US20190198325A1 (en) 2017-12-22 2019-06-27 International Business Machines Corporation Extreme ultraviolet (euv) lithography patterning methods utilizing euv resist hardening
CN110528003B (zh) * 2018-05-25 2020-10-27 北京航空航天大学 一种涂层的复合制备方法
WO2020209939A1 (en) * 2019-04-08 2020-10-15 Applied Materials, Inc. Methods for modifying photoresist profiles and tuning critical dimensions
KR20240000897A (ko) 2022-06-24 2024-01-03 삼성전자주식회사 반도체 장치 제조 방법

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JP3317582B2 (ja) * 1994-06-01 2002-08-26 菱電セミコンダクタシステムエンジニアリング株式会社 微細パターンの形成方法
US5876903A (en) 1996-12-31 1999-03-02 Advanced Micro Devices Virtual hard mask for etching
JPH1126356A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体装置の製造方法
US6423475B1 (en) 1999-03-11 2002-07-23 Advanced Micro Devices, Inc. Sidewall formation for sidewall patterning of sub 100 nm structures
JP2000235969A (ja) 1999-02-15 2000-08-29 Sony Corp 半導体装置の製造方法
JP2001265011A (ja) * 2000-03-17 2001-09-28 Sanyo Electric Co Ltd 半導体装置の製造方法
US6645677B1 (en) * 2000-09-18 2003-11-11 Micronic Laser Systems Ab Dual layer reticle blank and manufacturing process
US6864144B2 (en) 2002-05-30 2005-03-08 Intel Corporation Method of stabilizing resist material through ion implantation
US6653735B1 (en) 2002-07-30 2003-11-25 Advanced Micro Devices, Inc. CVD silicon carbide layer as a BARC and hard mask for gate patterning
JP2004157424A (ja) * 2002-11-08 2004-06-03 Sony Corp レジストの剥離方法及び半導体装置の製造方法
DE102004058412B4 (de) * 2004-12-03 2017-03-02 Austriamicrosystems Ag Mehrfachmaske und Verfahren zur Herstellung unterschiedlich dotierter Gebiete und Verwendung des Verfahrens
KR100925029B1 (ko) 2006-12-27 2009-11-03 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100891247B1 (ko) * 2007-05-14 2009-04-01 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
JP4427562B2 (ja) 2007-06-11 2010-03-10 株式会社東芝 パターン形成方法
KR100858877B1 (ko) 2007-08-13 2008-09-17 주식회사 하이닉스반도체 반도체 소자 제조 방법
US8030218B2 (en) * 2008-03-21 2011-10-04 Micron Technology, Inc. Method for selectively modifying spacing between pitch multiplied structures
US8273634B2 (en) * 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9755049B2 (en) 2015-01-21 2017-09-05 Samsung Electronics Co., Ltd. Semiconductor devices including active patterns having different pitches and methods of fabricating the same
TWI677011B (zh) * 2015-01-29 2019-11-11 南韓商三星電子股份有限公司 製造半導體裝置的方法
TWI913294B (zh) 2020-07-27 2026-02-01 美商應用材料股份有限公司 高蝕刻選擇性非晶碳膜
TWI847663B (zh) * 2023-04-24 2024-07-01 南亞科技股份有限公司 半導體結構的形成方法
TWI885942B (zh) * 2023-04-24 2025-06-01 南亞科技股份有限公司 半導體結構的形成方法
TWI914245B (zh) 2023-04-24 2026-02-01 南亞科技股份有限公司 半導體結構的形成方法

Also Published As

Publication number Publication date
WO2011022635A3 (en) 2011-04-21
US20110300711A1 (en) 2011-12-08
KR20120046311A (ko) 2012-05-09
WO2011022635A2 (en) 2011-02-24
KR101662028B1 (ko) 2016-10-05
US8912097B2 (en) 2014-12-16
CN102498543A (zh) 2012-06-13
CN102498543B (zh) 2015-01-21
JP2013502726A (ja) 2013-01-24
JP5716026B2 (ja) 2015-05-13

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