WO2008139848A1 - フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法 - Google Patents
フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法 Download PDFInfo
- Publication number
- WO2008139848A1 WO2008139848A1 PCT/JP2008/057718 JP2008057718W WO2008139848A1 WO 2008139848 A1 WO2008139848 A1 WO 2008139848A1 JP 2008057718 W JP2008057718 W JP 2008057718W WO 2008139848 A1 WO2008139848 A1 WO 2008139848A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photomask
- photomask substrate
- substrate
- pair
- reference plane
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B23/00—Re-forming shaped glass
- C03B23/02—Re-forming glass sheets
- C03B23/023—Re-forming glass sheets by bending
- C03B23/025—Re-forming glass sheets by bending by gravity
- C03B23/0252—Re-forming glass sheets by bending by gravity by gravity only, e.g. sagging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08751903.9A EP2146244B1 (en) | 2007-05-09 | 2008-04-22 | Fabricatiion method of a photomask substrate |
KR1020147007728A KR101497886B1 (ko) | 2007-05-09 | 2008-04-22 | 포토마스크용 기판, 포토마스크용 기판의 성형 부재, 포토마스크용 기판의 제조 방법, 포토마스크, 및 포토마스크를 사용한 노광 방법 |
CN2008800153743A CN101681092B (zh) | 2007-05-09 | 2008-04-22 | 光罩用基板、光罩用基板的成形构件、光罩用基板的制造方法、光罩、及使用光罩的曝光方法 |
JP2009514063A JP5304644B2 (ja) | 2007-05-09 | 2008-04-22 | フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法 |
US12/591,121 US8153336B2 (en) | 2007-05-09 | 2009-11-09 | Photomask substrate, photomask substrate forming member, photomask substrate fabricating method, photomask, and exposing method that uses the photomask |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007124126 | 2007-05-09 | ||
JP2007-124126 | 2007-05-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/591,121 Continuation US8153336B2 (en) | 2007-05-09 | 2009-11-09 | Photomask substrate, photomask substrate forming member, photomask substrate fabricating method, photomask, and exposing method that uses the photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008139848A1 true WO2008139848A1 (ja) | 2008-11-20 |
Family
ID=40002066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/057718 WO2008139848A1 (ja) | 2007-05-09 | 2008-04-22 | フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8153336B2 (ja) |
EP (1) | EP2146244B1 (ja) |
JP (1) | JP5304644B2 (ja) |
KR (2) | KR101497886B1 (ja) |
CN (1) | CN101681092B (ja) |
TW (1) | TWI430018B (ja) |
WO (1) | WO2008139848A1 (ja) |
Cited By (12)
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US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US8446579B2 (en) | 2008-05-28 | 2013-05-21 | Nikon Corporation | Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method |
US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
US8462317B2 (en) | 2007-10-16 | 2013-06-11 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US8520291B2 (en) | 2007-10-16 | 2013-08-27 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US8675177B2 (en) | 2003-04-09 | 2014-03-18 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas |
US8854601B2 (en) | 2005-05-12 | 2014-10-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9097981B2 (en) | 2007-10-12 | 2015-08-04 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US9140992B2 (en) | 2003-10-28 | 2015-09-22 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9164209B2 (en) | 2003-11-20 | 2015-10-20 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction |
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KR101260221B1 (ko) * | 2011-12-01 | 2013-05-06 | 주식회사 엘지화학 | 마스크 |
NL2011592A (en) * | 2012-10-31 | 2014-05-06 | Asml Netherlands Bv | Compensation for patterning device deformation. |
US9027365B2 (en) | 2013-01-08 | 2015-05-12 | Heraeus Quartz America Llc | System and method for forming fused quartz glass |
JP2014141356A (ja) * | 2013-01-22 | 2014-08-07 | Nippon Electric Glass Co Ltd | 結晶化ガラス屈曲板の製造方法 |
JP5582232B1 (ja) * | 2013-07-30 | 2014-09-03 | 日本電気硝子株式会社 | 曲面形状を有するガラス板の製造方法、曲面形状を有するガラス板及び曲面形状を有するガラス板の製造装置 |
JP6257780B2 (ja) | 2013-12-23 | 2018-01-10 | ヘレーウス クオーツ アメリカ エルエルシーHeraeus Quartz America LLC | 不透明な石英ガラス部品を形成するための方法 |
CN112859396B (zh) * | 2015-09-01 | 2024-01-05 | 株式会社尼康 | 光罩保持装置、曝光装置、光罩保持方法、曝光方法 |
CN105511220B (zh) * | 2016-02-04 | 2019-12-27 | 京东方科技集团股份有限公司 | 掩膜版 |
CN106502044B (zh) * | 2017-01-10 | 2020-01-24 | 昆山国显光电有限公司 | 掩膜板及其制造方法 |
DE102020114880A1 (de) * | 2020-06-04 | 2021-12-09 | Gerresheimer Bünde Gmbh | Vorrichtung zum Umformen eines Glaszeuges |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5727262A (en) * | 1980-07-28 | 1982-02-13 | Toshiba Corp | Pattern forming mask |
JPH0344639A (ja) * | 1989-07-12 | 1991-02-26 | Matsushita Electron Corp | フォトマスク |
JPH05326367A (ja) * | 1992-05-21 | 1993-12-10 | Hitachi Ltd | 露光方法、露光装置およびそれに用いるフォトマスク |
JPH09167736A (ja) * | 1995-12-15 | 1997-06-24 | Canon Inc | 走査型露光装置及びそれを用いたデバイス製造方法 |
JPH09251203A (ja) * | 1996-03-14 | 1997-09-22 | Hitachi Ltd | 露光装置 |
JP2000077321A (ja) * | 1998-08-31 | 2000-03-14 | Canon Inc | 投影露光方法及び投影露光装置 |
JP2002053330A (ja) * | 2000-08-10 | 2002-02-19 | Nikon Corp | 合成石英ガラスの成形方法及び合成石英ガラス |
JP2003050458A (ja) * | 2001-05-31 | 2003-02-21 | Toshiba Corp | 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法、マスク基板、露光マスクおよびサーバー |
JP2003075991A (ja) * | 2002-08-19 | 2003-03-12 | Hoya Corp | フォトマスクブランク、フォトマスクブランク用ガラス基板及びフォトマスク |
JP2003192363A (ja) * | 2001-12-26 | 2003-07-09 | Shin Etsu Chem Co Ltd | 合成石英ガラス及びその製造方法 |
JP2003292346A (ja) | 2002-01-31 | 2003-10-15 | Shin Etsu Chem Co Ltd | 大型基板及びその製造方法 |
JP2004359544A (ja) | 2002-01-31 | 2004-12-24 | Shin Etsu Chem Co Ltd | 大型基板の製造方法 |
JP2005262432A (ja) | 2004-02-18 | 2005-09-29 | Shin Etsu Chem Co Ltd | 大型基板の製造方法 |
WO2006013100A2 (en) * | 2004-08-06 | 2006-02-09 | Carl Zeiss Smt Ag | Projection objective for microlithography |
JP2006225249A (ja) * | 2004-10-15 | 2006-08-31 | Toshiba Ceramics Co Ltd | フォトマスク用合成シリカガラス基板の製造方法、その方法によるフォトマスク用合成シリカガラス基板、及びその方法に用いるアニール炉 |
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-
2008
- 2008-04-22 CN CN2008800153743A patent/CN101681092B/zh active Active
- 2008-04-22 JP JP2009514063A patent/JP5304644B2/ja active Active
- 2008-04-22 KR KR1020147007728A patent/KR101497886B1/ko active IP Right Grant
- 2008-04-22 EP EP08751903.9A patent/EP2146244B1/en not_active Not-in-force
- 2008-04-22 KR KR1020097025627A patent/KR101545361B1/ko active IP Right Grant
- 2008-04-22 WO PCT/JP2008/057718 patent/WO2008139848A1/ja active Application Filing
- 2008-05-08 TW TW097116955A patent/TWI430018B/zh active
-
2009
- 2009-11-09 US US12/591,121 patent/US8153336B2/en not_active Expired - Fee Related
Patent Citations (15)
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JPS5727262A (en) * | 1980-07-28 | 1982-02-13 | Toshiba Corp | Pattern forming mask |
JPH0344639A (ja) * | 1989-07-12 | 1991-02-26 | Matsushita Electron Corp | フォトマスク |
JPH05326367A (ja) * | 1992-05-21 | 1993-12-10 | Hitachi Ltd | 露光方法、露光装置およびそれに用いるフォトマスク |
JPH09167736A (ja) * | 1995-12-15 | 1997-06-24 | Canon Inc | 走査型露光装置及びそれを用いたデバイス製造方法 |
JPH09251203A (ja) * | 1996-03-14 | 1997-09-22 | Hitachi Ltd | 露光装置 |
JP2000077321A (ja) * | 1998-08-31 | 2000-03-14 | Canon Inc | 投影露光方法及び投影露光装置 |
JP2002053330A (ja) * | 2000-08-10 | 2002-02-19 | Nikon Corp | 合成石英ガラスの成形方法及び合成石英ガラス |
JP2003050458A (ja) * | 2001-05-31 | 2003-02-21 | Toshiba Corp | 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法、マスク基板、露光マスクおよびサーバー |
JP2003192363A (ja) * | 2001-12-26 | 2003-07-09 | Shin Etsu Chem Co Ltd | 合成石英ガラス及びその製造方法 |
JP2003292346A (ja) | 2002-01-31 | 2003-10-15 | Shin Etsu Chem Co Ltd | 大型基板及びその製造方法 |
JP2004359544A (ja) | 2002-01-31 | 2004-12-24 | Shin Etsu Chem Co Ltd | 大型基板の製造方法 |
JP2003075991A (ja) * | 2002-08-19 | 2003-03-12 | Hoya Corp | フォトマスクブランク、フォトマスクブランク用ガラス基板及びフォトマスク |
JP2005262432A (ja) | 2004-02-18 | 2005-09-29 | Shin Etsu Chem Co Ltd | 大型基板の製造方法 |
WO2006013100A2 (en) * | 2004-08-06 | 2006-02-09 | Carl Zeiss Smt Ag | Projection objective for microlithography |
JP2006225249A (ja) * | 2004-10-15 | 2006-08-31 | Toshiba Ceramics Co Ltd | フォトマスク用合成シリカガラス基板の製造方法、その方法によるフォトマスク用合成シリカガラス基板、及びその方法に用いるアニール炉 |
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US9164209B2 (en) | 2003-11-20 | 2015-10-20 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction |
US10281632B2 (en) | 2003-11-20 | 2019-05-07 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction |
US9429848B2 (en) | 2004-02-06 | 2016-08-30 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
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US9140990B2 (en) | 2004-02-06 | 2015-09-22 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
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US10007194B2 (en) | 2004-02-06 | 2018-06-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10234770B2 (en) | 2004-02-06 | 2019-03-19 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
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Publication number | Publication date |
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US8153336B2 (en) | 2012-04-10 |
EP2146244B1 (en) | 2016-03-16 |
TWI430018B (zh) | 2014-03-11 |
CN101681092B (zh) | 2012-07-25 |
TW200903145A (en) | 2009-01-16 |
KR20140057353A (ko) | 2014-05-12 |
EP2146244A4 (en) | 2010-04-28 |
CN101681092A (zh) | 2010-03-24 |
US20100062350A1 (en) | 2010-03-11 |
KR101497886B1 (ko) | 2015-03-04 |
KR20100023854A (ko) | 2010-03-04 |
EP2146244A1 (en) | 2010-01-20 |
KR101545361B1 (ko) | 2015-08-19 |
JP5304644B2 (ja) | 2013-10-02 |
JPWO2008139848A1 (ja) | 2010-07-29 |
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