JP2013527595A5 - - Google Patents

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JP2013527595A5
JP2013527595A5 JP2013500167A JP2013500167A JP2013527595A5 JP 2013527595 A5 JP2013527595 A5 JP 2013527595A5 JP 2013500167 A JP2013500167 A JP 2013500167A JP 2013500167 A JP2013500167 A JP 2013500167A JP 2013527595 A5 JP2013527595 A5 JP 2013527595A5
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Japan
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substrate
plasma
ions
plasma sheath
resist features
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JP2013500167A
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Japanese (ja)
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JP2013527595A (ja
JP5728566B2 (ja
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Priority claimed from US13/046,136 external-priority patent/US8778603B2/en
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JP2013500167A 2010-03-15 2011-03-16 イオン注入を用いて基板のパターン化特徴を変更するための方法及びシステム Active JP5728566B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34026810P 2010-03-15 2010-03-15
US13/046,136 2011-03-11
US13/046,136 US8778603B2 (en) 2010-03-15 2011-03-11 Method and system for modifying substrate relief features using ion implantation
PCT/US2011/028583 WO2011116039A1 (en) 2010-03-15 2011-03-16 Method and system for modifying substrate patterned features using ion implantation

Publications (3)

Publication Number Publication Date
JP2013527595A JP2013527595A (ja) 2013-06-27
JP2013527595A5 true JP2013527595A5 (https=) 2014-05-01
JP5728566B2 JP5728566B2 (ja) 2015-06-03

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JP2013500167A Active JP5728566B2 (ja) 2010-03-15 2011-03-16 イオン注入を用いて基板のパターン化特徴を変更するための方法及びシステム

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US (2) US8778603B2 (https=)
JP (1) JP5728566B2 (https=)
CN (1) CN103003914A (https=)
TW (1) TWI532073B (https=)
WO (1) WO2011116039A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8778603B2 (en) * 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
US8435727B2 (en) * 2010-10-01 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US8460569B2 (en) 2011-04-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Method and system for post-etch treatment of patterned substrate features
US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
US8906576B2 (en) * 2012-01-25 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Material engineering for high performance Li-ion battery electrodes
US8937019B2 (en) * 2012-04-03 2015-01-20 Varian Semiconductor Equipment Associates, Inc. Techniques for generating three dimensional structures
US9297063B2 (en) 2012-04-26 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Plasma potential modulated ion implantation system
CN103632936B (zh) * 2012-08-20 2016-02-17 中芯国际集成电路制造(上海)有限公司 离子注入的方法
US9232628B2 (en) 2013-02-20 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Method and system for plasma-assisted ion beam processing
US8952344B2 (en) 2013-03-14 2015-02-10 Varian Semiconductor Equipment Associates Techniques for processing photoresist features using ions
US20160064239A1 (en) 2014-08-28 2016-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Integrated Circuit Patterning
CN106033715B (zh) * 2015-03-11 2019-03-22 上海临港凯世通半导体有限公司 FinFET的掺杂方法
CN106033728B (zh) * 2015-03-11 2019-07-09 上海凯世通半导体股份有限公司 FinFET的掺杂方法
CN106033729B (zh) * 2015-03-11 2019-04-02 上海凯世通半导体股份有限公司 FinFET的掺杂方法
CN106571291B (zh) * 2015-10-09 2019-10-29 北京北方华创微电子装备有限公司 一种图形转移方法
US9852924B1 (en) * 2016-08-24 2017-12-26 Lam Research Corporation Line edge roughness improvement with sidewall sputtering
US10229832B2 (en) * 2016-09-22 2019-03-12 Varian Semiconductor Equipment Associates, Inc. Techniques for forming patterned features using directional ions
US20180122670A1 (en) * 2016-11-01 2018-05-03 Varian Semiconductor Equipment Associates, Inc. Removable substrate plane structure ring
US10658184B2 (en) 2016-12-15 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern fidelity enhancement with directional patterning technology
US9865433B1 (en) * 2016-12-19 2018-01-09 Varian Semiconductor Equipment Associats, Inc. Gas injection system for ion beam device
US10431462B2 (en) * 2017-02-15 2019-10-01 Lam Research Corporation Plasma assisted doping on germanium
US10312089B1 (en) 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for controlling an end-to-end distance in semiconductor device
US10522349B2 (en) 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
TWI883050B (zh) * 2019-10-01 2025-05-11 荷蘭商Ａｓｍｌ荷蘭公司 用於對準及接合組件之正反兩用長型元件、用於極紫外線（ｅｕｖ）輻射源之容器、微影系統、及用於將裝置接合至容器之方法
US11854818B2 (en) * 2021-05-04 2023-12-26 Applied Materials, Inc. Angled etch for surface smoothing

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358061A (ja) * 2000-04-12 2001-12-26 Mitsubishi Electric Corp 半導体装置の製造方法
JP2003347734A (ja) * 2002-05-23 2003-12-05 Konica Minolta Holdings Inc ビアホール形成方法
US6875659B2 (en) * 2002-08-12 2005-04-05 Macronix International Co., Ltd. Methods of code programming a mask ROM
JP2006278006A (ja) 2005-03-28 2006-10-12 Japan Atomic Energy Agency イオン源引き出し領域におけるプラズマ境界面制御方法及びそのイオン源
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
JP5108489B2 (ja) * 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
US8063437B2 (en) * 2007-07-27 2011-11-22 Panasonic Corporation Semiconductor device and method for producing the same
JP5329865B2 (ja) * 2008-07-31 2013-10-30 パナソニック株式会社 半導体装置及びその製造方法
JP5578782B2 (ja) * 2008-03-31 2014-08-27 東京エレクトロン株式会社 プラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
US20090263751A1 (en) 2008-04-22 2009-10-22 Swaminathan Sivakumar Methods for double patterning photoresist
JP2010010417A (ja) * 2008-06-27 2010-01-14 Panasonic Corp プラズマドーピング方法及びプラズマドーピング装置
US7767977B1 (en) * 2009-04-03 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Ion source
US8623171B2 (en) 2009-04-03 2014-01-07 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
US8603591B2 (en) * 2009-04-03 2013-12-10 Varian Semiconductor Ewuipment Associates, Inc. Enhanced etch and deposition profile control using plasma sheath engineering
US8188445B2 (en) * 2009-04-03 2012-05-29 Varian Semiconductor Equipment Associates, Inc. Ion source
US8101510B2 (en) * 2009-04-03 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
US8912097B2 (en) * 2009-08-20 2014-12-16 Varian Semiconductor Equipment Associates, Inc. Method and system for patterning a substrate
US8778603B2 (en) * 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
US8435727B2 (en) * 2010-10-01 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US8716682B2 (en) * 2011-04-04 2014-05-06 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for multiple slot ion implantation
US8460569B2 (en) * 2011-04-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Method and system for post-etch treatment of patterned substrate features
US20120263887A1 (en) * 2011-04-13 2012-10-18 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for ion-assisted atomic layer deposition
US8778465B2 (en) * 2011-05-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Ion-assisted direct growth of porous materials
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
US9118001B2 (en) * 2012-07-11 2015-08-25 Varian Semiconductor Equipment Associates, Inc. Techniques for treating sidewalls of patterned structures using angled ion treatment
US9236257B2 (en) * 2013-03-13 2016-01-12 Varian Semiconductor Equipment Associates, Inc. Techniques to mitigate straggle damage to sensitive structures
US9520267B2 (en) * 2014-06-20 2016-12-13 Applied Mateirals, Inc. Bias voltage frequency controlled angular ion distribution in plasma processing
US9396965B2 (en) * 2014-08-05 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for anisotropic metal etching
US9460961B2 (en) * 2014-08-05 2016-10-04 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for anisotropic metal etching

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