JP5728566B2 - イオン注入を用いて基板のパターン化特徴を変更するための方法及びシステム - Google Patents

イオン注入を用いて基板のパターン化特徴を変更するための方法及びシステム Download PDF

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JP5728566B2
JP5728566B2 JP2013500167A JP2013500167A JP5728566B2 JP 5728566 B2 JP5728566 B2 JP 5728566B2 JP 2013500167 A JP2013500167 A JP 2013500167A JP 2013500167 A JP2013500167 A JP 2013500167A JP 5728566 B2 JP5728566 B2 JP 5728566B2
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substrate
ions
plasma
patterned resist
features
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JP2013527595A5 (https=
JP2013527595A (ja
Inventor
ゴデ ルドヴィック
ゴデ ルドヴィック
エム マーティン パトリック
エム マーティン パトリック
ジェイ ミラー ティモシー
ジェイ ミラー ティモシー
シング ヴィクラム
シング ヴィクラム
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2013500167A 2010-03-15 2011-03-16 イオン注入を用いて基板のパターン化特徴を変更するための方法及びシステム Active JP5728566B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34026810P 2010-03-15 2010-03-15
US13/046,136 2011-03-11
US13/046,136 US8778603B2 (en) 2010-03-15 2011-03-11 Method and system for modifying substrate relief features using ion implantation
PCT/US2011/028583 WO2011116039A1 (en) 2010-03-15 2011-03-16 Method and system for modifying substrate patterned features using ion implantation

Publications (3)

Publication Number Publication Date
JP2013527595A JP2013527595A (ja) 2013-06-27
JP2013527595A5 JP2013527595A5 (https=) 2014-05-01
JP5728566B2 true JP5728566B2 (ja) 2015-06-03

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JP2013500167A Active JP5728566B2 (ja) 2010-03-15 2011-03-16 イオン注入を用いて基板のパターン化特徴を変更するための方法及びシステム

Country Status (5)

Country Link
US (2) US8778603B2 (https=)
JP (1) JP5728566B2 (https=)
CN (1) CN103003914A (https=)
TW (1) TWI532073B (https=)
WO (1) WO2011116039A1 (https=)

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US8435727B2 (en) * 2010-10-01 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US8460569B2 (en) 2011-04-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Method and system for post-etch treatment of patterned substrate features
US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
US8906576B2 (en) * 2012-01-25 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Material engineering for high performance Li-ion battery electrodes
US8937019B2 (en) * 2012-04-03 2015-01-20 Varian Semiconductor Equipment Associates, Inc. Techniques for generating three dimensional structures
US9297063B2 (en) 2012-04-26 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Plasma potential modulated ion implantation system
CN103632936B (zh) * 2012-08-20 2016-02-17 中芯国际集成电路制造(上海)有限公司 离子注入的方法
US9232628B2 (en) 2013-02-20 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Method and system for plasma-assisted ion beam processing
US8952344B2 (en) 2013-03-14 2015-02-10 Varian Semiconductor Equipment Associates Techniques for processing photoresist features using ions
US20160064239A1 (en) 2014-08-28 2016-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Integrated Circuit Patterning
CN106033715B (zh) * 2015-03-11 2019-03-22 上海临港凯世通半导体有限公司 FinFET的掺杂方法
CN106033728B (zh) * 2015-03-11 2019-07-09 上海凯世通半导体股份有限公司 FinFET的掺杂方法
CN106033729B (zh) * 2015-03-11 2019-04-02 上海凯世通半导体股份有限公司 FinFET的掺杂方法
CN106571291B (zh) * 2015-10-09 2019-10-29 北京北方华创微电子装备有限公司 一种图形转移方法
US9852924B1 (en) * 2016-08-24 2017-12-26 Lam Research Corporation Line edge roughness improvement with sidewall sputtering
US10229832B2 (en) * 2016-09-22 2019-03-12 Varian Semiconductor Equipment Associates, Inc. Techniques for forming patterned features using directional ions
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US10431462B2 (en) * 2017-02-15 2019-10-01 Lam Research Corporation Plasma assisted doping on germanium
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US10522349B2 (en) 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
TWI883050B (zh) * 2019-10-01 2025-05-11 荷蘭商Ａｓｍｌ荷蘭公司 用於對準及接合組件之正反兩用長型元件、用於極紫外線（ｅｕｖ）輻射源之容器、微影系統、及用於將裝置接合至容器之方法
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Also Published As

Publication number Publication date
US20110223546A1 (en) 2011-09-15
US9767987B2 (en) 2017-09-19
TWI532073B (zh) 2016-05-01
WO2011116039A1 (en) 2011-09-22
TW201145354A (en) 2011-12-16
CN103003914A (zh) 2013-03-27
US8778603B2 (en) 2014-07-15
US20140306127A1 (en) 2014-10-16
JP2013527595A (ja) 2013-06-27

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