CN103003914A - 使用离子植入修改衬底图案特征的方法及系统 - Google Patents

使用离子植入修改衬底图案特征的方法及系统 Download PDF

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Publication number
CN103003914A
CN103003914A CN2011800239110A CN201180023911A CN103003914A CN 103003914 A CN103003914 A CN 103003914A CN 2011800239110 A CN2011800239110 A CN 2011800239110A CN 201180023911 A CN201180023911 A CN 201180023911A CN 103003914 A CN103003914 A CN 103003914A
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CN
China
Prior art keywords
substrate
plasma
features
ions
photoresist features
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Pending
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CN2011800239110A
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English (en)
Chinese (zh)
Inventor
卢多维克·葛特
派崔克·M·马汀
提摩太·J·米勒
维克拉姆·辛
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN103003914A publication Critical patent/CN103003914A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2011800239110A 2010-03-15 2011-03-16 使用离子植入修改衬底图案特征的方法及系统 Pending CN103003914A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34026810P 2010-03-15 2010-03-15
US13/046,136 2011-03-11
US13/046,136 US8778603B2 (en) 2010-03-15 2011-03-11 Method and system for modifying substrate relief features using ion implantation
PCT/US2011/028583 WO2011116039A1 (en) 2010-03-15 2011-03-16 Method and system for modifying substrate patterned features using ion implantation

Publications (1)

Publication Number Publication Date
CN103003914A true CN103003914A (zh) 2013-03-27

Family

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Family Applications (1)

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CN2011800239110A Pending CN103003914A (zh) 2010-03-15 2011-03-16 使用离子植入修改衬底图案特征的方法及系统

Country Status (5)

Country Link
US (2) US8778603B2 (https=)
JP (1) JP5728566B2 (https=)
CN (1) CN103003914A (https=)
TW (1) TWI532073B (https=)
WO (1) WO2011116039A1 (https=)

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CN106033715A (zh) * 2015-03-11 2016-10-19 上海凯世通半导体股份有限公司 FinFET的掺杂方法
CN106571291A (zh) * 2015-10-09 2017-04-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种图形转移方法
CN107785253A (zh) * 2016-08-24 2018-03-09 朗姆研究公司 利用侧边溅射的线边缘粗糙表面改进
CN109791874A (zh) * 2016-09-22 2019-05-21 瓦里安半导体设备公司 使用方向性离子形成图案化特征的技术
CN109923655A (zh) * 2016-11-01 2019-06-21 瓦里安半导体设备公司 可拆卸的衬底平面结构环
TWI883050B (zh) * 2019-10-01 2025-05-11 荷蘭商Ａｓｍｌ荷蘭公司 用於對準及接合組件之正反兩用長型元件、用於極紫外線（ｅｕｖ）輻射源之容器、微影系統、及用於將裝置接合至容器之方法

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US8778603B2 (en) * 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
US8435727B2 (en) * 2010-10-01 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US8460569B2 (en) 2011-04-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Method and system for post-etch treatment of patterned substrate features
US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
US8906576B2 (en) * 2012-01-25 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Material engineering for high performance Li-ion battery electrodes
US8937019B2 (en) * 2012-04-03 2015-01-20 Varian Semiconductor Equipment Associates, Inc. Techniques for generating three dimensional structures
US9297063B2 (en) 2012-04-26 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Plasma potential modulated ion implantation system
CN103632936B (zh) * 2012-08-20 2016-02-17 中芯国际集成电路制造(上海)有限公司 离子注入的方法
US9232628B2 (en) 2013-02-20 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Method and system for plasma-assisted ion beam processing
US8952344B2 (en) 2013-03-14 2015-02-10 Varian Semiconductor Equipment Associates Techniques for processing photoresist features using ions
US20160064239A1 (en) 2014-08-28 2016-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Integrated Circuit Patterning
CN106033728B (zh) * 2015-03-11 2019-07-09 上海凯世通半导体股份有限公司 FinFET的掺杂方法
CN106033729B (zh) * 2015-03-11 2019-04-02 上海凯世通半导体股份有限公司 FinFET的掺杂方法
US10658184B2 (en) 2016-12-15 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern fidelity enhancement with directional patterning technology
US9865433B1 (en) * 2016-12-19 2018-01-09 Varian Semiconductor Equipment Associats, Inc. Gas injection system for ion beam device
US10431462B2 (en) * 2017-02-15 2019-10-01 Lam Research Corporation Plasma assisted doping on germanium
US10312089B1 (en) 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for controlling an end-to-end distance in semiconductor device
US10522349B2 (en) 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
US11854818B2 (en) * 2021-05-04 2023-12-26 Applied Materials, Inc. Angled etch for surface smoothing

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US20090263751A1 (en) * 2008-04-22 2009-10-22 Swaminathan Sivakumar Methods for double patterning photoresist
WO2010114961A2 (en) * 2009-04-03 2010-10-07 Varian Semiconductor Equipment Associates Plasma processing apparatus

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106033715A (zh) * 2015-03-11 2016-10-19 上海凯世通半导体股份有限公司 FinFET的掺杂方法
CN106033715B (zh) * 2015-03-11 2019-03-22 上海临港凯世通半导体有限公司 FinFET的掺杂方法
CN106571291A (zh) * 2015-10-09 2017-04-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种图形转移方法
CN106571291B (zh) * 2015-10-09 2019-10-29 北京北方华创微电子装备有限公司 一种图形转移方法
CN107785253A (zh) * 2016-08-24 2018-03-09 朗姆研究公司 利用侧边溅射的线边缘粗糙表面改进
CN107785253B (zh) * 2016-08-24 2021-12-10 朗姆研究公司 利用侧边溅射的线边缘粗糙表面改进
CN109791874A (zh) * 2016-09-22 2019-05-21 瓦里安半导体设备公司 使用方向性离子形成图案化特征的技术
CN109791874B (zh) * 2016-09-22 2022-11-29 瓦里安半导体设备公司 将衬底及设置在其上的层图案化以及形成器件结构的方法
CN109923655A (zh) * 2016-11-01 2019-06-21 瓦里安半导体设备公司 可拆卸的衬底平面结构环
CN109923655B (zh) * 2016-11-01 2023-04-11 瓦里安半导体设备公司 离子束设备
TWI883050B (zh) * 2019-10-01 2025-05-11 荷蘭商Ａｓｍｌ荷蘭公司 用於對準及接合組件之正反兩用長型元件、用於極紫外線（ｅｕｖ）輻射源之容器、微影系統、及用於將裝置接合至容器之方法

Also Published As

Publication number Publication date
US20110223546A1 (en) 2011-09-15
US9767987B2 (en) 2017-09-19
TWI532073B (zh) 2016-05-01
WO2011116039A1 (en) 2011-09-22
TW201145354A (en) 2011-12-16
US8778603B2 (en) 2014-07-15
US20140306127A1 (en) 2014-10-16
JP2013527595A (ja) 2013-06-27
JP5728566B2 (ja) 2015-06-03

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