KR101653195B1 - 적응적 나노토포그래피 형상제작 - Google Patents

적응적 나노토포그래피 형상제작 Download PDF

Info

Publication number
KR101653195B1
KR101653195B1 KR1020117000107A KR20117000107A KR101653195B1 KR 101653195 B1 KR101653195 B1 KR 101653195B1 KR 1020117000107 A KR1020117000107 A KR 1020117000107A KR 20117000107 A KR20117000107 A KR 20117000107A KR 101653195 B1 KR101653195 B1 KR 101653195B1
Authority
KR
South Korea
Prior art keywords
polymerizable material
topography
drop pattern
template
nanotopography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117000107A
Other languages
English (en)
Korean (ko)
Other versions
KR20110025951A (ko
Inventor
아비나쉬 팡가
시들가타 브이. 스레니바산
Original Assignee
보드 오브 리전츠 더 유니버시티 오브 텍사스 시스템
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 보드 오브 리전츠 더 유니버시티 오브 텍사스 시스템 filed Critical 보드 오브 리전츠 더 유니버시티 오브 텍사스 시스템
Publication of KR20110025951A publication Critical patent/KR20110025951A/ko
Application granted granted Critical
Publication of KR101653195B1 publication Critical patent/KR101653195B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
KR1020117000107A 2008-06-09 2009-06-05 적응적 나노토포그래피 형상제작 Active KR101653195B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US6000708P 2008-06-09 2008-06-09
US61/060,007 2008-06-09
US12/479,200 2009-06-05
US12/479,200 US8394282B2 (en) 2008-06-09 2009-06-05 Adaptive nanotopography sculpting

Publications (2)

Publication Number Publication Date
KR20110025951A KR20110025951A (ko) 2011-03-14
KR101653195B1 true KR101653195B1 (ko) 2016-09-01

Family

ID=41323556

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117000107A Active KR101653195B1 (ko) 2008-06-09 2009-06-05 적응적 나노토포그래피 형상제작

Country Status (6)

Country Link
US (1) US8394282B2 (enExample)
EP (1) EP2304501A2 (enExample)
JP (1) JP5349588B2 (enExample)
KR (1) KR101653195B1 (enExample)
CN (1) CN102089708A (enExample)
WO (1) WO2009151560A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12482662B2 (en) 2022-02-21 2025-11-25 Globalwafers Co., Ltd. Systems and methods for producing epitaxial wafers

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4892026B2 (ja) * 2009-03-19 2012-03-07 株式会社東芝 パターン形成方法
GB2480806B (en) * 2010-05-27 2016-01-06 Inca Digital Printers Ltd Printing method and apparatus
JP5935453B2 (ja) * 2012-03-30 2016-06-15 大日本印刷株式会社 基板の製造方法、および、ナノインプリントリソグラフィ用テンプレートの製造方法
US9718096B2 (en) 2013-08-19 2017-08-01 Board Of Regents, The University Of Texas System Programmable deposition of thin films of a user-defined profile with nanometer scale accuracy
JP6495283B2 (ja) * 2013-08-19 2019-04-03 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム ナノメータスケール精度を有するユーザ定義プロファイルのプログラム可能な薄膜蒸着
JP6437387B2 (ja) * 2015-05-25 2018-12-12 東芝メモリ株式会社 基板平坦化方法
CA3001848C (en) * 2015-10-15 2023-09-19 Board Of Regents, The University Of Texas System Versatile process for precision nanoscale manufacturing
US10331028B2 (en) * 2015-11-12 2019-06-25 Toshiba Memory Corporation Imprinting apparatus, recording medium, and imprinting method
EP3458807B1 (en) 2016-05-20 2023-09-13 Board Of Regents The University Of Texas System Precision alignment of the substrate coordinate system relative to the inkjet coordinate system
US9993962B2 (en) * 2016-05-23 2018-06-12 Canon Kabushiki Kaisha Method of imprinting to correct for a distortion within an imprint system
WO2018027069A1 (en) * 2016-08-03 2018-02-08 Board Of Regents, The University Of Texas System Roll-to-roll programmable film imprint lithography
CN109564875B (zh) * 2016-08-11 2023-04-21 东京毅力科创株式会社 基底的基于蚀刻的平坦化方法
US9997348B2 (en) * 2016-09-28 2018-06-12 International Business Machines Corporation Wafer stress control and topography compensation
WO2018067677A1 (en) * 2016-10-04 2018-04-12 Tokyo Electron Limited Facilitation of spin-coat planarization over feature topography during substrate fabrication
US10079152B1 (en) 2017-02-24 2018-09-18 Canon Kabushiki Kaisha Method for forming planarized etch mask structures over existing topography
US11520226B2 (en) 2017-05-12 2022-12-06 Canon Kabushiki Kaisha Imprint method, imprint apparatus, imprint system, and method of manufacturing article
US10580659B2 (en) * 2017-09-14 2020-03-03 Canon Kabushiki Kaisha Planarization process and apparatus
KR102369538B1 (ko) 2017-09-28 2022-03-03 캐논 가부시끼가이샤 성형 장치 및 물품 제조 방법
US10895806B2 (en) * 2017-09-29 2021-01-19 Canon Kabushiki Kaisha Imprinting method and apparatus
KR102426957B1 (ko) 2017-10-17 2022-08-01 캐논 가부시끼가이샤 임프린트 장치, 및 물품의 제조 방법
US11126083B2 (en) 2018-01-24 2021-09-21 Canon Kabushiki Kaisha Superstrate and a method of using the same
US10606171B2 (en) * 2018-02-14 2020-03-31 Canon Kabushiki Kaisha Superstrate and a method of using the same
JP7241548B2 (ja) * 2018-02-19 2023-03-17 キヤノン株式会社 インプリント装置、平坦化層形成装置、形成装置、制御方法、および、物品製造方法
US10553501B2 (en) * 2018-03-28 2020-02-04 Canon Kabushiki Kaisha Apparatus for use in forming an adaptive layer and a method of using the same
JP7033994B2 (ja) 2018-04-11 2022-03-11 キヤノン株式会社 成形装置及び物品の製造方法
US10894420B2 (en) 2018-04-11 2021-01-19 Canon Kabushiki Kaisha Ejection-material injecting method, ejection-material ejection apparatus, and imprinting apparatus
JP7071231B2 (ja) * 2018-06-28 2022-05-18 キヤノン株式会社 平坦化装置、平坦化方法、物品製造方法及び液滴配置パターンデータの作成方法
JP7195789B2 (ja) * 2018-06-29 2022-12-26 キヤノン株式会社 平坦化装置、及び物品の製造方法
JP7218114B2 (ja) * 2018-07-12 2023-02-06 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
JP7150535B2 (ja) * 2018-09-13 2022-10-11 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
JP7299685B2 (ja) * 2018-10-11 2023-06-28 キヤノン株式会社 膜形成装置、膜形成方法および物品製造方法
JP7237519B2 (ja) * 2018-10-25 2023-03-13 キヤノン株式会社 型を用いて基板上の組成物を成形する成形装置、成形方法、および物品の製造方法
US11204549B2 (en) * 2018-10-26 2021-12-21 Canon Kabushiki Kaisha Superstrate with an offset mesa and methods of using the same
JP7129315B2 (ja) 2018-11-05 2022-09-01 キヤノン株式会社 平坦化層形成装置、平坦化方法、および、物品製造方法
CN109445247B (zh) * 2018-11-16 2020-06-19 京东方科技集团股份有限公司 压印模板及其制备方法和压印方法
JP7171394B2 (ja) 2018-11-29 2022-11-15 キヤノン株式会社 成形装置、成形方法、および物品の製造方法
TWI794566B (zh) 2018-12-13 2023-03-01 德克薩斯大學系統董事會 用以修改基板的系統及方法
WO2020136057A1 (en) * 2018-12-28 2020-07-02 Inl - International Iberian Nanotechnology Laboratory Method for patterning a surface of a substrate
JP7267783B2 (ja) * 2019-03-07 2023-05-02 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
US11209730B2 (en) * 2019-03-14 2021-12-28 Canon Kabushiki Kaisha Methods of generating drop patterns, systems for shaping films with the drop pattern, and methods of manufacturing an article with the drop pattern
JP7278828B2 (ja) * 2019-03-26 2023-05-22 キヤノン株式会社 成形方法、成形装置、インプリント方法、および物品の製造方法
US12044962B2 (en) 2019-04-19 2024-07-23 Canon Kabushiki Kaisha Forming apparatus, forming method, and article manufacturing method
JP7336303B2 (ja) * 2019-07-31 2023-08-31 キヤノン株式会社 物品製造方法、膜形成方法、型製造方法、物品製造システム、情報処理方法およびプログラム
US11550216B2 (en) 2019-11-25 2023-01-10 Canon Kabushiki Kaisha Systems and methods for curing a shaped film
US11567401B2 (en) * 2019-12-20 2023-01-31 Canon Kabushiki Kaisha Nanofabrication method with correction of distortion within an imprint system
EP4077567A1 (en) 2019-12-20 2022-10-26 3M Innovative Properties Company Method of applying filament adhesive
US11562924B2 (en) * 2020-01-31 2023-01-24 Canon Kabushiki Kaisha Planarization apparatus, planarization process, and method of manufacturing an article
US11656546B2 (en) * 2020-02-27 2023-05-23 Canon Kabushiki Kaisha Exposure apparatus for uniform light intensity and methods of using the same
US11455436B2 (en) 2020-03-25 2022-09-27 Tokyo Electron Limited Predicting across wafer spin-on planarization over a patterned topography
US11752519B2 (en) * 2020-06-19 2023-09-12 Canon Kabushiki Kaisha Planarization method and photocurable composition
JP7730625B2 (ja) * 2020-09-01 2025-08-28 キヤノン株式会社 成形装置、成形方法、およびテンプレート
JP7507641B2 (ja) 2020-09-08 2024-06-28 キヤノン株式会社 成形装置及び物品の製造方法
JP7634961B2 (ja) * 2020-10-28 2025-02-25 キヤノン株式会社 成形方法、成形装置、成形システム及び物品の製造方法
JP7532234B2 (ja) * 2020-12-10 2024-08-13 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
JP7646447B2 (ja) 2021-05-13 2025-03-17 キヤノン株式会社 基板処理装置、基板処理方法、及び物品の製造方法
JP7652645B2 (ja) * 2021-06-30 2025-03-27 キヤノン株式会社 平坦化装置、および物品製造方法
US12194671B2 (en) 2021-07-30 2025-01-14 Canon Kabushiki Kaisha Information processing apparatus, molding apparatus, molding method, and article manufacturing method
US12195382B2 (en) 2021-12-01 2025-01-14 Canon Kabushiki Kaisha Superstrate and a method of using the same
US12300522B2 (en) * 2021-12-21 2025-05-13 Canon Kabushiki Kaisha Apparatus including a substrate chuck, a dispenser, and a planarization head and methods of using the same
JP7781668B2 (ja) 2022-02-22 2025-12-08 キヤノン株式会社 搬送装置、基板処理装置、搬送方法および物品製造方法
JP2023175231A (ja) 2022-05-30 2023-12-12 キヤノン株式会社 成形装置、成形方法及び物品の製造方法
US12325046B2 (en) * 2022-06-28 2025-06-10 Canon Kabushiki Kaisha Superstrate including a body and layers and methods of forming and using the same
US12153342B2 (en) 2022-08-30 2024-11-26 Canon Kabushiki Kaisha Nanofabrication method with correction of distortion within an imprint system
WO2024249853A2 (en) * 2023-06-02 2024-12-05 Board Of Regents, The University Of Texas System Area-specific cleaning methods for bonding applications
US20250133786A1 (en) * 2023-10-24 2025-04-24 Micron Technology, Inc. Additive approaches to modifying wafer geometry
JP2025160767A (ja) 2024-04-10 2025-10-23 キヤノン株式会社 平坦化装置、および物品製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7060977B1 (en) 2002-05-14 2006-06-13 Nanoink, Inc. Nanolithographic calibration methods
WO2008066562A2 (en) * 2006-04-03 2008-06-05 Molecular Imprints, Inc. Imprint lithography method and system

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736424A (en) * 1987-02-27 1998-04-07 Lucent Technologies Inc. Device fabrication involving planarization
EP0683511B1 (en) * 1994-05-18 2000-02-23 AT&T Corp. Device fabrication involving planarization
JP2002014477A (ja) * 2000-06-28 2002-01-18 Nec Corp 基板表面の平坦化方法
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
US6844272B2 (en) * 2002-03-01 2005-01-18 Euv Limited Liability Corporation Correction of localized shape errors on optical surfaces by altering the localized density of surface or near-surface layers
US6796628B2 (en) * 2002-11-07 2004-09-28 Pitney Bowes Inc. Contour correcting printer
EP1768846B1 (en) * 2004-06-03 2010-08-11 Molecular Imprints, Inc. Fluid dispensing and drop-on-demand dispensing for nano-scale manufacturing
US7105452B2 (en) * 2004-08-13 2006-09-12 Molecular Imprints, Inc. Method of planarizing a semiconductor substrate with an etching chemistry
US7041604B2 (en) * 2004-09-21 2006-05-09 Molecular Imprints, Inc. Method of patterning surfaces while providing greater control of recess anisotropy
US7235424B2 (en) * 2005-07-14 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for enhanced CMP planarization using surrounded dummy design
US20070138699A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US7360851B1 (en) * 2006-02-15 2008-04-22 Kla-Tencor Technologies Corporation Automated pattern recognition of imprint technology
JP2007296783A (ja) * 2006-05-01 2007-11-15 Canon Inc 加工装置及び方法、並びに、デバイス製造方法
JP2008091782A (ja) * 2006-10-04 2008-04-17 Toshiba Corp パターン形成用テンプレート、パターン形成方法、及びナノインプリント装置
US20090014917A1 (en) 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7060977B1 (en) 2002-05-14 2006-06-13 Nanoink, Inc. Nanolithographic calibration methods
WO2008066562A2 (en) * 2006-04-03 2008-06-05 Molecular Imprints, Inc. Imprint lithography method and system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12482662B2 (en) 2022-02-21 2025-11-25 Globalwafers Co., Ltd. Systems and methods for producing epitaxial wafers

Also Published As

Publication number Publication date
JP2011529626A (ja) 2011-12-08
WO2009151560A3 (en) 2010-01-28
US20100012622A1 (en) 2010-01-21
KR20110025951A (ko) 2011-03-14
JP5349588B2 (ja) 2013-11-20
CN102089708A (zh) 2011-06-08
US8394282B2 (en) 2013-03-12
WO2009151560A2 (en) 2009-12-17
EP2304501A2 (en) 2011-04-06

Similar Documents

Publication Publication Date Title
KR101653195B1 (ko) 적응적 나노토포그래피 형상제작
US7140861B2 (en) Compliant hard template for UV imprinting
JP7336373B2 (ja) 型を製造する方法、型、インプリント方法、インプリント装置及び物品の製造方法
CN102203671B (zh) 压印工艺的分离阶段中的应变和动力学控制
US10580659B2 (en) Planarization process and apparatus
US20120189780A1 (en) Controlling Thickness of Residual Layer
JP2012504336A (ja) インプリント・リソグラフィ用の粒子削減
KR20120125473A (ko) 고 콘트라스트 정렬 마크를 갖는 주형
JP7278381B2 (ja) 液滴パターンを生成する方法、液滴パターンを有する膜を成形するためのシステム、および、液滴パターンを使って物品を製造する方法
KR20170056457A (ko) 반전 톤 패터닝 방법
JP7222606B2 (ja) エッチングマスク構造を形成するための方法
KR20210052256A (ko) 슈퍼스트레이트 척, 사용 방법 및 물품의 제조 방법
KR102795773B1 (ko) 임프린트 시스템 내의 왜곡의 보정을 갖는 나노제조 방법
Sakai High volume semiconductor manufacturing using nanoimprint lithography
KR20180062361A (ko) 템플릿의 위치를 조정하기 위한 시스템 및 방법
TWI423306B (zh) 適應性奈米形貌刻蝕技術
JP2007287951A (ja) 基板の加工方法、パターン領域を有する部材の製造方法
Sreenivasan et al. Adaptive nanotopography sculpting
US11249405B2 (en) System and method for improving the performance of a nanoimprint system
CN116056865B (zh) 成型装置及物品制造方法
US12085852B2 (en) Template, method of forming a template, apparatus and method of manufacturing an article
JP2023171283A (ja) 平坦化プロセス、装置、及び物品製造方法
TW202530872A (zh) 使用及製造具有台面側壁塗層的奈米壓印模板的方法
Singhal et al. Inkjet-based adaptive planarization (Conference Presentation)

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20190809

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10