JP5349588B2 - 適応ナノトポグラフィ・スカルプティング - Google Patents

適応ナノトポグラフィ・スカルプティング Download PDF

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Publication number
JP5349588B2
JP5349588B2 JP2011513482A JP2011513482A JP5349588B2 JP 5349588 B2 JP5349588 B2 JP 5349588B2 JP 2011513482 A JP2011513482 A JP 2011513482A JP 2011513482 A JP2011513482 A JP 2011513482A JP 5349588 B2 JP5349588 B2 JP 5349588B2
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polymerizable material
nanotopography
pattern
template
substrate
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Japanese (ja)
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JP2011529626A (ja
JP2011529626A5 (enExample
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パンガ，アヴィナッシュ
スリーニヴァッサン，シトルガタ・ヴイ
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University of Texas System
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University of Texas System
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
JP2011513482A 2008-06-09 2009-06-05 適応ナノトポグラフィ・スカルプティング Active JP5349588B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US6000708P 2008-06-09 2008-06-09
US61/060,007 2008-06-09
US12/479,200 2009-06-05
US12/479,200 US8394282B2 (en) 2008-06-09 2009-06-05 Adaptive nanotopography sculpting
PCT/US2009/003420 WO2009151560A2 (en) 2008-06-09 2009-06-05 Adaptive nanotopography sculpting

Publications (3)

Publication Number Publication Date
JP2011529626A JP2011529626A (ja) 2011-12-08
JP2011529626A5 JP2011529626A5 (enExample) 2012-07-12
JP5349588B2 true JP5349588B2 (ja) 2013-11-20

Family

ID=41323556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011513482A Active JP5349588B2 (ja) 2008-06-09 2009-06-05 適応ナノトポグラフィ・スカルプティング

Country Status (6)

Country Link
US (1) US8394282B2 (enExample)
EP (1) EP2304501A2 (enExample)
JP (1) JP5349588B2 (enExample)
KR (1) KR101653195B1 (enExample)
CN (1) CN102089708A (enExample)
WO (1) WO2009151560A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10331028B2 (en) 2015-11-12 2019-06-25 Toshiba Memory Corporation Imprinting apparatus, recording medium, and imprinting method

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US9718096B2 (en) 2013-08-19 2017-08-01 Board Of Regents, The University Of Texas System Programmable deposition of thin films of a user-defined profile with nanometer scale accuracy
JP6495283B2 (ja) * 2013-08-19 2019-04-03 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム ナノメータスケール精度を有するユーザ定義プロファイルのプログラム可能な薄膜蒸着
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JP7033994B2 (ja) 2018-04-11 2022-03-11 キヤノン株式会社 成形装置及び物品の製造方法
US10894420B2 (en) 2018-04-11 2021-01-19 Canon Kabushiki Kaisha Ejection-material injecting method, ejection-material ejection apparatus, and imprinting apparatus
JP7071231B2 (ja) * 2018-06-28 2022-05-18 キヤノン株式会社 平坦化装置、平坦化方法、物品製造方法及び液滴配置パターンデータの作成方法
JP7195789B2 (ja) * 2018-06-29 2022-12-26 キヤノン株式会社 平坦化装置、及び物品の製造方法
JP7218114B2 (ja) * 2018-07-12 2023-02-06 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
JP7150535B2 (ja) * 2018-09-13 2022-10-11 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
JP7299685B2 (ja) * 2018-10-11 2023-06-28 キヤノン株式会社 膜形成装置、膜形成方法および物品製造方法
JP7237519B2 (ja) * 2018-10-25 2023-03-13 キヤノン株式会社 型を用いて基板上の組成物を成形する成形装置、成形方法、および物品の製造方法
US11204549B2 (en) * 2018-10-26 2021-12-21 Canon Kabushiki Kaisha Superstrate with an offset mesa and methods of using the same
JP7129315B2 (ja) 2018-11-05 2022-09-01 キヤノン株式会社 平坦化層形成装置、平坦化方法、および、物品製造方法
CN109445247B (zh) * 2018-11-16 2020-06-19 京东方科技集团股份有限公司 压印模板及其制备方法和压印方法
JP7171394B2 (ja) 2018-11-29 2022-11-15 キヤノン株式会社 成形装置、成形方法、および物品の製造方法
TWI794566B (zh) 2018-12-13 2023-03-01 德克薩斯大學系統董事會 用以修改基板的系統及方法
WO2020136057A1 (en) * 2018-12-28 2020-07-02 Inl - International Iberian Nanotechnology Laboratory Method for patterning a surface of a substrate
JP7267783B2 (ja) * 2019-03-07 2023-05-02 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
US11209730B2 (en) * 2019-03-14 2021-12-28 Canon Kabushiki Kaisha Methods of generating drop patterns, systems for shaping films with the drop pattern, and methods of manufacturing an article with the drop pattern
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US10331028B2 (en) 2015-11-12 2019-06-25 Toshiba Memory Corporation Imprinting apparatus, recording medium, and imprinting method

Also Published As

Publication number Publication date
JP2011529626A (ja) 2011-12-08
WO2009151560A3 (en) 2010-01-28
US20100012622A1 (en) 2010-01-21
KR20110025951A (ko) 2011-03-14
CN102089708A (zh) 2011-06-08
KR101653195B1 (ko) 2016-09-01
US8394282B2 (en) 2013-03-12
WO2009151560A2 (en) 2009-12-17
EP2304501A2 (en) 2011-04-06

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