JP2011529626A5 - - Google Patents

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Publication number
JP2011529626A5
JP2011529626A5 JP2011513482A JP2011513482A JP2011529626A5 JP 2011529626 A5 JP2011529626 A5 JP 2011529626A5 JP 2011513482 A JP2011513482 A JP 2011513482A JP 2011513482 A JP2011513482 A JP 2011513482A JP 2011529626 A5 JP2011529626 A5 JP 2011529626A5
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JP
Japan
Prior art keywords
nanotopography
polymerizable material
pattern
desired shape
parasitic effect
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JP2011513482A
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English (en)
Japanese (ja)
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JP5349588B2 (ja
JP2011529626A (ja
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Priority claimed from PCT/US2009/003420 external-priority patent/WO2009151560A2/en
Publication of JP2011529626A publication Critical patent/JP2011529626A/ja
Publication of JP2011529626A5 publication Critical patent/JP2011529626A5/ja
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JP2011513482A 2008-06-09 2009-06-05 適応ナノトポグラフィ・スカルプティング Active JP5349588B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US6000708P 2008-06-09 2008-06-09
US61/060,007 2008-06-09
PCT/US2009/003420 WO2009151560A2 (en) 2008-06-09 2009-06-05 Adaptive nanotopography sculpting
US12/479,200 2009-06-05
US12/479,200 US8394282B2 (en) 2008-06-09 2009-06-05 Adaptive nanotopography sculpting

Publications (3)

Publication Number Publication Date
JP2011529626A JP2011529626A (ja) 2011-12-08
JP2011529626A5 true JP2011529626A5 (enExample) 2012-07-12
JP5349588B2 JP5349588B2 (ja) 2013-11-20

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JP2011513482A Active JP5349588B2 (ja) 2008-06-09 2009-06-05 適応ナノトポグラフィ・スカルプティング

Country Status (6)

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US (1) US8394282B2 (enExample)
EP (1) EP2304501A2 (enExample)
JP (1) JP5349588B2 (enExample)
KR (1) KR101653195B1 (enExample)
CN (1) CN102089708A (enExample)
WO (1) WO2009151560A2 (enExample)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4892026B2 (ja) * 2009-03-19 2012-03-07 株式会社東芝 パターン形成方法
GB2480806B (en) * 2010-05-27 2016-01-06 Inca Digital Printers Ltd Printing method and apparatus
JP5935453B2 (ja) * 2012-03-30 2016-06-15 大日本印刷株式会社 基板の製造方法、および、ナノインプリントリソグラフィ用テンプレートの製造方法
US9718096B2 (en) 2013-08-19 2017-08-01 Board Of Regents, The University Of Texas System Programmable deposition of thin films of a user-defined profile with nanometer scale accuracy
EP3036048B8 (en) * 2013-08-19 2025-04-02 Board of Regents, The University of Texas System Programmable deposition of thin films of a user-defined profile with nanometer scale accuracy
JP6437387B2 (ja) * 2015-05-25 2018-12-12 東芝メモリ株式会社 基板平坦化方法
EP3362189B1 (en) * 2015-10-15 2024-12-04 Board of Regents, The University of Texas System Versatile process for depositing thin films
US10331028B2 (en) * 2015-11-12 2019-06-25 Toshiba Memory Corporation Imprinting apparatus, recording medium, and imprinting method
KR102353875B1 (ko) 2016-05-20 2022-01-21 더 보드 오브 리젠츠 오브 더 유니버시티 오브 텍사스 시스템 잉크제트 좌표계에 대한 기판 좌표계의 정밀 정렬
US9993962B2 (en) * 2016-05-23 2018-06-12 Canon Kabushiki Kaisha Method of imprinting to correct for a distortion within an imprint system
JP7041121B2 (ja) * 2016-08-03 2022-03-23 ボード オブ リージェンツ，ザ ユニバーシティ オブ テキサス システム 半導体平坦化用及びインプリントリソグラフィ用ウェハスケールプログラマブル膜
US9991133B2 (en) * 2016-08-11 2018-06-05 Tokyo Electron Limited Method for etch-based planarization of a substrate
US9997348B2 (en) * 2016-09-28 2018-06-12 International Business Machines Corporation Wafer stress control and topography compensation
KR102399364B1 (ko) * 2016-10-04 2022-05-18 도쿄엘렉트론가부시키가이샤 기판 제조 동안의 피처 토포그래피에 대한 스핀 코트 평탄화의 용이화
US10079152B1 (en) 2017-02-24 2018-09-18 Canon Kabushiki Kaisha Method for forming planarized etch mask structures over existing topography
US11520226B2 (en) 2017-05-12 2022-12-06 Canon Kabushiki Kaisha Imprint method, imprint apparatus, imprint system, and method of manufacturing article
US10580659B2 (en) * 2017-09-14 2020-03-03 Canon Kabushiki Kaisha Planarization process and apparatus
KR102369538B1 (ko) 2017-09-28 2022-03-03 캐논 가부시끼가이샤 성형 장치 및 물품 제조 방법
US10895806B2 (en) * 2017-09-29 2021-01-19 Canon Kabushiki Kaisha Imprinting method and apparatus
KR102426957B1 (ko) 2017-10-17 2022-08-01 캐논 가부시끼가이샤 임프린트 장치, 및 물품의 제조 방법
US11126083B2 (en) 2018-01-24 2021-09-21 Canon Kabushiki Kaisha Superstrate and a method of using the same
US10606171B2 (en) * 2018-02-14 2020-03-31 Canon Kabushiki Kaisha Superstrate and a method of using the same
JP7241548B2 (ja) * 2018-02-19 2023-03-17 キヤノン株式会社 インプリント装置、平坦化層形成装置、形成装置、制御方法、および、物品製造方法
US10553501B2 (en) * 2018-03-28 2020-02-04 Canon Kabushiki Kaisha Apparatus for use in forming an adaptive layer and a method of using the same
JP7033994B2 (ja) 2018-04-11 2022-03-11 キヤノン株式会社 成形装置及び物品の製造方法
US10894420B2 (en) 2018-04-11 2021-01-19 Canon Kabushiki Kaisha Ejection-material injecting method, ejection-material ejection apparatus, and imprinting apparatus
JP7071231B2 (ja) * 2018-06-28 2022-05-18 キヤノン株式会社 平坦化装置、平坦化方法、物品製造方法及び液滴配置パターンデータの作成方法
JP7195789B2 (ja) * 2018-06-29 2022-12-26 キヤノン株式会社 平坦化装置、及び物品の製造方法
JP7218114B2 (ja) * 2018-07-12 2023-02-06 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
JP7150535B2 (ja) * 2018-09-13 2022-10-11 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
JP7299685B2 (ja) * 2018-10-11 2023-06-28 キヤノン株式会社 膜形成装置、膜形成方法および物品製造方法
JP7237519B2 (ja) * 2018-10-25 2023-03-13 キヤノン株式会社 型を用いて基板上の組成物を成形する成形装置、成形方法、および物品の製造方法
US11204549B2 (en) * 2018-10-26 2021-12-21 Canon Kabushiki Kaisha Superstrate with an offset mesa and methods of using the same
JP7129315B2 (ja) 2018-11-05 2022-09-01 キヤノン株式会社 平坦化層形成装置、平坦化方法、および、物品製造方法
CN109445247B (zh) * 2018-11-16 2020-06-19 京东方科技集团股份有限公司 压印模板及其制备方法和压印方法
JP7171394B2 (ja) 2018-11-29 2022-11-15 キヤノン株式会社 成形装置、成形方法、および物品の製造方法
WO2020123929A1 (en) 2018-12-13 2020-06-18 Board Of Regents, The University Of Texas System System and method for modification of substrates
EP3903338A1 (en) * 2018-12-28 2021-11-03 INL - International Iberian Nanotechnology Laboratory Method for patterning a surface of a substrate
JP7267783B2 (ja) * 2019-03-07 2023-05-02 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
US11209730B2 (en) * 2019-03-14 2021-12-28 Canon Kabushiki Kaisha Methods of generating drop patterns, systems for shaping films with the drop pattern, and methods of manufacturing an article with the drop pattern
JP7278828B2 (ja) * 2019-03-26 2023-05-22 キヤノン株式会社 成形方法、成形装置、インプリント方法、および物品の製造方法
US12044962B2 (en) 2019-04-19 2024-07-23 Canon Kabushiki Kaisha Forming apparatus, forming method, and article manufacturing method
JP7336303B2 (ja) * 2019-07-31 2023-08-31 キヤノン株式会社 物品製造方法、膜形成方法、型製造方法、物品製造システム、情報処理方法およびプログラム
US11550216B2 (en) 2019-11-25 2023-01-10 Canon Kabushiki Kaisha Systems and methods for curing a shaped film
EP4077567A1 (en) 2019-12-20 2022-10-26 3M Innovative Properties Company Method of applying filament adhesive
US11567401B2 (en) * 2019-12-20 2023-01-31 Canon Kabushiki Kaisha Nanofabrication method with correction of distortion within an imprint system
US11562924B2 (en) * 2020-01-31 2023-01-24 Canon Kabushiki Kaisha Planarization apparatus, planarization process, and method of manufacturing an article
US11656546B2 (en) * 2020-02-27 2023-05-23 Canon Kabushiki Kaisha Exposure apparatus for uniform light intensity and methods of using the same
US11455436B2 (en) 2020-03-25 2022-09-27 Tokyo Electron Limited Predicting across wafer spin-on planarization over a patterned topography
US11752519B2 (en) * 2020-06-19 2023-09-12 Canon Kabushiki Kaisha Planarization method and photocurable composition
JP7730625B2 (ja) * 2020-09-01 2025-08-28 キヤノン株式会社 成形装置、成形方法、およびテンプレート
JP7507641B2 (ja) 2020-09-08 2024-06-28 キヤノン株式会社 成形装置及び物品の製造方法
JP7668627B2 (ja) * 2020-09-30 2025-04-25 キヤノン株式会社 膜形成方法、物品の製造方法、供給装置、膜形成装置、および基板
JP7634961B2 (ja) * 2020-10-28 2025-02-25 キヤノン株式会社 成形方法、成形装置、成形システム及び物品の製造方法
JP7532234B2 (ja) * 2020-12-10 2024-08-13 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
JP7646447B2 (ja) 2021-05-13 2025-03-17 キヤノン株式会社 基板処理装置、基板処理方法、及び物品の製造方法
JP7743209B2 (ja) 2021-06-08 2025-09-24 キヤノン株式会社 成形装置、成形方法及び物品の製造方法
JP7652645B2 (ja) * 2021-06-30 2025-03-27 キヤノン株式会社 平坦化装置、および物品製造方法
TWI906524B (zh) 2021-07-30 2025-12-01 日商佳能股份有限公司 資訊處理設備、成型設備、成型方法及物品製造方法
US12195382B2 (en) 2021-12-01 2025-01-14 Canon Kabushiki Kaisha Superstrate and a method of using the same
US12300522B2 (en) * 2021-12-21 2025-05-13 Canon Kabushiki Kaisha Apparatus including a substrate chuck, a dispenser, and a planarization head and methods of using the same
US12482662B2 (en) 2022-02-21 2025-11-25 Globalwafers Co., Ltd. Systems and methods for producing epitaxial wafers
JP7781668B2 (ja) 2022-02-22 2025-12-08 キヤノン株式会社 搬送装置、基板処理装置、搬送方法および物品製造方法
JP7851189B2 (ja) 2022-05-30 2026-04-24 キヤノン株式会社 成形装置、成形方法及び物品の製造方法
US12325046B2 (en) * 2022-06-28 2025-06-10 Canon Kabushiki Kaisha Superstrate including a body and layers and methods of forming and using the same
US12153342B2 (en) 2022-08-30 2024-11-26 Canon Kabushiki Kaisha Nanofabrication method with correction of distortion within an imprint system
KR20260018921A (ko) * 2023-06-02 2026-02-09 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 본딩 애플리케이션들에 대한 영역-특정 세정 방법들
JP2025001320A (ja) * 2023-06-20 2025-01-08 キヤノン株式会社 成形システム、成形方法、及び物品の製造方法
US20250133786A1 (en) * 2023-10-24 2025-04-24 Micron Technology, Inc. Additive approaches to modifying wafer geometry
JP2025160767A (ja) 2024-04-10 2025-10-23 キヤノン株式会社 平坦化装置、および物品製造方法
TW202610004A (zh) * 2024-07-24 2026-03-01 日商佳能股份有限公司 雙鑲嵌的配線溝與通孔的形成方法及半導體裝置的製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736424A (en) * 1987-02-27 1998-04-07 Lucent Technologies Inc. Device fabrication involving planarization
EP0683511B1 (en) * 1994-05-18 2000-02-23 AT&T Corp. Device fabrication involving planarization
JP2002014477A (ja) * 2000-06-28 2002-01-18 Nec Corp 基板表面の平坦化方法
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
US6844272B2 (en) * 2002-03-01 2005-01-18 Euv Limited Liability Corporation Correction of localized shape errors on optical surfaces by altering the localized density of surface or near-surface layers
US7060977B1 (en) * 2002-05-14 2006-06-13 Nanoink, Inc. Nanolithographic calibration methods
US6796628B2 (en) * 2002-11-07 2004-09-28 Pitney Bowes Inc. Contour correcting printer
KR101193918B1 (ko) * 2004-06-03 2012-10-29 몰레큘러 임프린츠 인코퍼레이티드 나노-스케일 제조공정을 위한 유체 배분방법과 필요에 따른액적 배분방법
US20070228593A1 (en) 2006-04-03 2007-10-04 Molecular Imprints, Inc. Residual Layer Thickness Measurement and Correction
US7105452B2 (en) * 2004-08-13 2006-09-12 Molecular Imprints, Inc. Method of planarizing a semiconductor substrate with an etching chemistry
US7041604B2 (en) * 2004-09-21 2006-05-09 Molecular Imprints, Inc. Method of patterning surfaces while providing greater control of recess anisotropy
US7235424B2 (en) * 2005-07-14 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for enhanced CMP planarization using surrounded dummy design
US20070138699A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US7360851B1 (en) * 2006-02-15 2008-04-22 Kla-Tencor Technologies Corporation Automated pattern recognition of imprint technology
JP2007296783A (ja) * 2006-05-01 2007-11-15 Canon Inc 加工装置及び方法、並びに、デバイス製造方法
JP2008091782A (ja) * 2006-10-04 2008-04-17 Toshiba Corp パターン形成用テンプレート、パターン形成方法、及びナノインプリント装置
US20090014917A1 (en) 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography

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