JP7299685B2 - 膜形成装置、膜形成方法および物品製造方法 - Google Patents
膜形成装置、膜形成方法および物品製造方法 Download PDFInfo
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Description
Claims (15)
- 基板の上に膜を形成する膜形成装置であって、
前記基板を保持する基板保持部と、
前記基板の上に配置された硬化性組成物と平坦面とを接触させる駆動部と、
前記基板保持部に設けられ、前記基板を介して前記硬化性組成物を加熱する加熱部と、
前記硬化性組成物が前記平坦面にならった状態で前記硬化性組成物を硬化させることによって前記硬化性組成物の硬化物からなる膜を形成する硬化部と、
前記基板保持部を第1位置および第2位置に配置する移動機構と、を備え、
前記第1位置は、前記基板保持部が前記基板を受け取る位置であり、前記第2位置は、前記硬化部が前記硬化性組成物を硬化させる位置であり、
前記加熱部は、前記基板保持部が前記第1位置に配置されている状態において、前記基板保持部の基板保持面が目標温度に維持されるように制御される、
ことを特徴とする膜形成装置。 - 前記加熱部は、前記基板保持部が前記第1位置に配置されてから前記第2位置において前記硬化性組成物が前記平坦面にならうまでの間、前記基板保持面が目標温度に維持されるように制御される、
ことを特徴とする請求項1に記載の膜形成装置。 - 前記加熱部は、前記硬化性組成物を100°Cから200°Cまでの温度範囲内における温度に加熱する、
ことを特徴とする請求項1又は2に記載の膜形成装置。 - 前記基板は、複数のショット領域を有し、前記平坦面は、前記複数のショット領域の全域をカバーする大きさを有する、
ことを特徴とする請求項1乃至3のいずれか1項に記載の膜形成装置。 - 前記基板の上に前記硬化性組成物を供給する供給部を更に備える、
ことを特徴とする請求項1乃至4のいずれか1項に記載の膜形成装置。 - 前記供給部は、前記硬化性組成物を吐出する吐出口を含み、前記基板と前記吐出口との相対位置を変更しながら前記吐出口から前記硬化性組成物を吐出することによって前記基板の上に前記硬化性組成物を配置する、
ことを特徴とする請求項5に記載の膜形成装置。 - 前記供給部は、前記基板の上に前記硬化性組成物をスピンコートするスピンコータを含む、
ことを特徴とする請求項5に記載の膜形成装置。 - 前記供給部は、前記基板が有するパターンに応じて決定された制御情報に基づいて前記基板の上に前記硬化性組成物を配置する、
ことを特徴とする請求項5又は6に記載の膜形成装置。 - 前記硬化部は、紫外線によって前記硬化性組成物を硬化させる、
ことを特徴とする請求項1乃至8のいずれか1項に記載の膜形成装置。 - 前記硬化部は、前記基板の上の前記硬化性組成物に対する紫外線の照射領域を変更する変更部を含む、
ことを特徴とする請求項8に記載の膜形成装置。 - 前記駆動部は、前記基板の膜形成領域の一部分の上の前記硬化性組成物と前記平坦面とを接触させた後に、前記硬化性組成物と前記平坦面との接触領域を拡大させ、
前記硬化部は、前記接触領域の拡大に応じて前記照射領域を変更する、
ことを特徴とする請求項10に記載の膜形成装置。 - 請求項1乃至11のいずれか1項に記載の膜形成装置によって基板の上に硬化性組成物の硬化物からなる膜を形成する工程と、
前記膜の上にフォトレジスト膜を配置する工程と、
前記フォトレジスト膜を露光および現像プロセスによってパターニングしてフォトレジストパターンを形成する工程と、
前記フォトレジストパターンを使って前記基板を処理する工程と、
を含み、前記基板から物品を製造することを特徴とする物品製造方法。 - 基板の上に膜を形成する膜形成方法であって、
前記基板を保持する基板保持面を有する基板保持部が第1位置に配置された状態で、前記基板保持部に設けられた加熱部によって前記基板保持面を目標温度に維持する工程と、
前記第1位置に配置された前記基板保持部の前記基板保持面が前記目標温度に維持された状態で、前記基板保持面の上に、硬化性組成物が配置された前記基板を配置する工程と、
前記基板を保持した前記基板保持面を前記第1位置から第2位置に搬送する工程と、
前記第2位置において、前記基板の上に配置された前記硬化性組成物と平坦面とを接触させる工程と、
前記第2位置において、前記基板保持部に設けられた前記加熱部による前記基板保持面の加熱によって前記基板を介して前記硬化性組成物が加熱され、これにより前記硬化性組成物の粘性が低下して前記硬化性組成物が前記平坦面にならった状態で、前記硬化性組成物を硬化させることによって前記硬化性組成物の硬化物からなる膜を形成する工程と、
を含むことを特徴とする膜形成方法。 - 前記基板保持部が前記第1位置に配置されてから前記第2位置において前記硬化性組成物が前記平坦面にならうまでの間、前記基板保持面が目標温度に維持される、
ことを特徴とする請求項13に記載の膜形成方法。 - 請求項14又は15に記載の膜形成方法によって基板の上に硬化性組成物の硬化物からなる膜を形成する工程と、
前記膜の上にフォトレジスト膜を配置する工程と、
前記フォトレジスト膜を露光および現像プロセスによってパターニングしてフォトレジストパターンを形成する工程と、
前記フォトレジストパターンを使って前記基板を処理する工程と、
を含み、前記基板から物品を製造することを特徴とする物品製造方法。
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Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004114382A1 (ja) | 2003-06-20 | 2004-12-29 | Matsushita Electric Industrial Co. Ltd. | パターン形成方法及び半導体装置の製造方法 |
JP2005532576A (ja) | 2002-02-27 | 2005-10-27 | ブルーワー サイエンス アイ エヌ シー. | 多層リソグラフィープロセスに関する新規な平坦化方法 |
JP2007536750A (ja) | 2004-05-07 | 2007-12-13 | オブデュキャット、アクチボラグ | 定温インプリントリソグラフィー方法 |
JP2008018570A (ja) | 2006-07-11 | 2008-01-31 | Nakano Seisakusho:Kk | 誘電体表面微細成型方法及び装置ならびに誘電体接合方法及び装置 |
JP2009128759A (ja) | 2007-11-27 | 2009-06-11 | Hitachi Chem Co Ltd | 感光性エレメント及びその製造方法 |
JP2010243920A (ja) | 2009-04-08 | 2010-10-28 | Panasonic Electric Works Co Ltd | 微細樹脂構造体及び光電回路基板の製造方法、微細樹脂構造体及び光電回路基板 |
JP2011529626A (ja) | 2008-06-09 | 2011-12-08 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 適応ナノトポグラフィ・スカルプティング |
US20130113086A1 (en) | 2011-11-08 | 2013-05-09 | Brewer Science Inc. | Self-leveling planarization materials for microelectronic topography |
JP2015533692A (ja) | 2012-09-18 | 2015-11-26 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 型押し加工する方法および装置 |
JP2015012280A5 (ja) | 2013-07-02 | 2016-08-18 | ||
JP2016219679A (ja) | 2015-05-25 | 2016-12-22 | 株式会社東芝 | 基板平坦化方法および滴下量算出方法 |
JP2017139257A (ja) | 2016-02-01 | 2017-08-10 | キヤノン株式会社 | インプリント装置、制御方法及び物品の製造方法 |
JP2017162929A (ja) | 2016-03-08 | 2017-09-14 | 東芝メモリ株式会社 | パターン形成方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5941836A (ja) * | 1982-09-02 | 1984-03-08 | Toshiba Corp | 塗布材塗布方法 |
US5434107A (en) | 1994-01-28 | 1995-07-18 | Texas Instruments Incorporated | Method for planarization |
MXPA02002594A (es) * | 1999-09-09 | 2002-08-30 | Allied Signal Inc | Aparato y metodo mejorados para la planarizacion de circuitos integrados. |
CA2380114C (en) * | 2002-04-04 | 2010-01-19 | Obducat Aktiebolag | Imprint method and device |
TW200504928A (en) * | 2003-06-20 | 2005-02-01 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor device |
JP2005101201A (ja) * | 2003-09-24 | 2005-04-14 | Canon Inc | ナノインプリント装置 |
US7775785B2 (en) * | 2006-12-20 | 2010-08-17 | Brewer Science Inc. | Contact planarization apparatus |
JP4989234B2 (ja) * | 2007-01-09 | 2012-08-01 | 東芝機械株式会社 | 転写装置 |
US9330933B2 (en) * | 2008-06-11 | 2016-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for planarizing a polymer layer |
JP2011199232A (ja) * | 2010-03-17 | 2011-10-06 | Sanei Kagaku Kk | プリント配線板及びその製造方法 |
KR101200562B1 (ko) * | 2011-01-17 | 2012-11-13 | 부산대학교 산학협력단 | 광정렬 일체형 대면적 금속 스탬프의 제조 방법 그리고 그를 이용한 고분자 광소자의 제조 방법 |
JP5880283B2 (ja) * | 2012-05-29 | 2016-03-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2014063791A (ja) * | 2012-09-20 | 2014-04-10 | Tokyo Electron Ltd | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
JP6338328B2 (ja) | 2013-07-02 | 2018-06-06 | キヤノン株式会社 | インプリント装置、インプリント方法および物品の製造方法 |
US11130286B2 (en) * | 2016-09-07 | 2021-09-28 | Canon Kabushiki Kaisha | Three-dimensional manufacturing apparatus, three-dimensional manufactured object producing method, and container for three-dimensional manufacturing apparatus |
-
2018
- 2018-10-11 JP JP2018192812A patent/JP7299685B2/ja active Active
-
2019
- 2019-10-01 EP EP19200694.8A patent/EP3637456B1/en active Active
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- 2019-10-08 KR KR1020190124338A patent/KR102602965B1/ko active IP Right Grant
- 2019-10-10 US US16/597,950 patent/US11275309B2/en active Active
- 2019-10-11 CN CN201910960886.7A patent/CN111048440B/zh active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005532576A (ja) | 2002-02-27 | 2005-10-27 | ブルーワー サイエンス アイ エヌ シー. | 多層リソグラフィープロセスに関する新規な平坦化方法 |
WO2004114382A1 (ja) | 2003-06-20 | 2004-12-29 | Matsushita Electric Industrial Co. Ltd. | パターン形成方法及び半導体装置の製造方法 |
JP2007536750A (ja) | 2004-05-07 | 2007-12-13 | オブデュキャット、アクチボラグ | 定温インプリントリソグラフィー方法 |
JP2008018570A (ja) | 2006-07-11 | 2008-01-31 | Nakano Seisakusho:Kk | 誘電体表面微細成型方法及び装置ならびに誘電体接合方法及び装置 |
JP2009128759A (ja) | 2007-11-27 | 2009-06-11 | Hitachi Chem Co Ltd | 感光性エレメント及びその製造方法 |
JP2011529626A (ja) | 2008-06-09 | 2011-12-08 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 適応ナノトポグラフィ・スカルプティング |
JP2010243920A (ja) | 2009-04-08 | 2010-10-28 | Panasonic Electric Works Co Ltd | 微細樹脂構造体及び光電回路基板の製造方法、微細樹脂構造体及び光電回路基板 |
US20130113086A1 (en) | 2011-11-08 | 2013-05-09 | Brewer Science Inc. | Self-leveling planarization materials for microelectronic topography |
JP2015533692A (ja) | 2012-09-18 | 2015-11-26 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 型押し加工する方法および装置 |
JP2015012280A5 (ja) | 2013-07-02 | 2016-08-18 | ||
JP2016219679A (ja) | 2015-05-25 | 2016-12-22 | 株式会社東芝 | 基板平坦化方法および滴下量算出方法 |
JP2017139257A (ja) | 2016-02-01 | 2017-08-10 | キヤノン株式会社 | インプリント装置、制御方法及び物品の製造方法 |
JP2017162929A (ja) | 2016-03-08 | 2017-09-14 | 東芝メモリ株式会社 | パターン形成方法 |
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