KR101607907B1 - 단결정 4H-SiC 기판 및 그 제조방법 - Google Patents

단결정 4H-SiC 기판 및 그 제조방법 Download PDF

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KR101607907B1
KR101607907B1 KR1020140030851A KR20140030851A KR101607907B1 KR 101607907 B1 KR101607907 B1 KR 101607907B1 KR 1020140030851 A KR1020140030851 A KR 1020140030851A KR 20140030851 A KR20140030851 A KR 20140030851A KR 101607907 B1 KR101607907 B1 KR 101607907B1
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single crystal
sic
concave portion
sic layer
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KR20140117277A (ko
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아키히토 오노
젬페이 카와즈
노부유키 토미타
타카노리 타나카
요이치로 미타니
켄이치 하마노
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미쓰비시덴키 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140030851A 2013-03-26 2014-03-17 단결정 4H-SiC 기판 및 그 제조방법 Active KR101607907B1 (ko)

Applications Claiming Priority (2)

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JPJP-P-2013-064365 2013-03-26
JP2013064365A JP6123408B2 (ja) 2013-03-26 2013-03-26 単結晶４Ｈ−ＳｉＣ基板及びその製造方法

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KR20140117277A KR20140117277A (ko) 2014-10-07
KR101607907B1 true KR101607907B1 (ko) 2016-03-31

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US (3) US9422640B2 (https=)
JP (1) JP6123408B2 (https=)
KR (1) KR101607907B1 (https=)
CN (1) CN104078331B (https=)
DE (1) DE102014205466B4 (https=)

Cited By (1)

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KR20180118018A (ko) 2017-04-20 2018-10-30 한국세라믹기술원 자외선 포토루미네선스를 이용한 결정의 폴리타입 분석방법

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JP5910801B1 (ja) 2014-08-01 2016-04-27 住友電気工業株式会社 エピタキシャルウエハおよびその製造方法
CN106796886B (zh) * 2014-08-29 2020-05-01 住友电气工业株式会社 碳化硅半导体器件和用于制造碳化硅半导体器件的方法
WO2016051975A1 (ja) * 2014-10-01 2016-04-07 住友電気工業株式会社 炭化珪素エピタキシャル基板
JP2016127177A (ja) * 2015-01-06 2016-07-11 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法
US9368415B1 (en) 2015-02-25 2016-06-14 International Business Machines Corporation Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers
JP6690282B2 (ja) * 2016-02-15 2020-04-28 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6672962B2 (ja) * 2016-03-31 2020-03-25 住友電気工業株式会社 炭化珪素半導体基板および半導体装置の製造方法
JP2017122047A (ja) * 2017-03-29 2017-07-13 三菱電機株式会社 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
JP6564151B1 (ja) * 2019-02-28 2019-08-21 株式会社アドマップ ＳｉＣ膜単体構造体
CN114242644B (zh) * 2021-11-17 2024-10-25 中国电子科技集团公司第五十五研究所 一种碳化硅沟槽结构外延填充方法
CN118073397B (zh) * 2022-11-14 2026-03-20 比亚迪股份有限公司 碳化硅外延片及其制备方法和应用

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DE60033829T2 (de) * 1999-09-07 2007-10-11 Sixon Inc. SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
ATE546569T1 (de) * 2002-03-19 2012-03-15 Central Res Inst Elect Verfahren zur herstellung von sic-kristall
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
JP4786223B2 (ja) * 2005-05-24 2011-10-05 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
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KR20180118018A (ko) 2017-04-20 2018-10-30 한국세라믹기술원 자외선 포토루미네선스를 이용한 결정의 폴리타입 분석방법

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JP2014189422A (ja) 2014-10-06
DE102014205466B4 (de) 2017-02-23
CN104078331B (zh) 2017-03-01
US9752254B2 (en) 2017-09-05
US9903048B2 (en) 2018-02-27
CN104078331A (zh) 2014-10-01
US9422640B2 (en) 2016-08-23
DE102014205466A1 (de) 2014-10-02
KR20140117277A (ko) 2014-10-07
US20140295136A1 (en) 2014-10-02
US20160298262A1 (en) 2016-10-13
JP6123408B2 (ja) 2017-05-10
US20160298264A1 (en) 2016-10-13

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