DE102014205466B4 - Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung - Google Patents

Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung Download PDF

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Publication number
DE102014205466B4
DE102014205466B4 DE102014205466.4A DE102014205466A DE102014205466B4 DE 102014205466 B4 DE102014205466 B4 DE 102014205466B4 DE 102014205466 A DE102014205466 A DE 102014205466A DE 102014205466 B4 DE102014205466 B4 DE 102014205466B4
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single crystal
sic
recesses
sic layer
crystal
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German (de)
English (en)
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DE102014205466A1 (de
Inventor
Akihito Ohno
Zempei Kawazu
Nobuyuki Tomita
Takanori Tanaka
Yoichiro Mitani
Kenichi Hamano
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE102014205466.4A 2013-03-26 2014-03-24 Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung Active DE102014205466B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-064365 2013-03-26
JP2013064365A JP6123408B2 (ja) 2013-03-26 2013-03-26 単結晶４Ｈ−ＳｉＣ基板及びその製造方法

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DE102014205466A1 DE102014205466A1 (de) 2014-10-02
DE102014205466B4 true DE102014205466B4 (de) 2017-02-23

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Country Link
US (3) US9422640B2 (https=)
JP (1) JP6123408B2 (https=)
KR (1) KR101607907B1 (https=)
CN (1) CN104078331B (https=)
DE (1) DE102014205466B4 (https=)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
JP5910801B1 (ja) 2014-08-01 2016-04-27 住友電気工業株式会社 エピタキシャルウエハおよびその製造方法
CN106796886B (zh) * 2014-08-29 2020-05-01 住友电气工业株式会社 碳化硅半导体器件和用于制造碳化硅半导体器件的方法
WO2016051975A1 (ja) * 2014-10-01 2016-04-07 住友電気工業株式会社 炭化珪素エピタキシャル基板
JP2016127177A (ja) * 2015-01-06 2016-07-11 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法
US9368415B1 (en) 2015-02-25 2016-06-14 International Business Machines Corporation Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers
JP6690282B2 (ja) * 2016-02-15 2020-04-28 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6672962B2 (ja) * 2016-03-31 2020-03-25 住友電気工業株式会社 炭化珪素半導体基板および半導体装置の製造方法
JP2017122047A (ja) * 2017-03-29 2017-07-13 三菱電機株式会社 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
KR101998138B1 (ko) 2017-04-20 2019-07-09 한국세라믹기술원 자외선 포토루미네선스를 이용한 결정의 폴리타입 분석방법
JP6564151B1 (ja) * 2019-02-28 2019-08-21 株式会社アドマップ ＳｉＣ膜単体構造体
CN114242644B (zh) * 2021-11-17 2024-10-25 中国电子科技集团公司第五十五研究所 一种碳化硅沟槽结构外延填充方法
CN118073397B (zh) * 2022-11-14 2026-03-20 比亚迪股份有限公司 碳化硅外延片及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
US20120280254A1 (en) * 2009-12-14 2012-11-08 Showa Denko K.K. Sic epitaxial wafer and method for manufacturing same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60033829T2 (de) * 1999-09-07 2007-10-11 Sixon Inc. SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
ATE546569T1 (de) * 2002-03-19 2012-03-15 Central Res Inst Elect Verfahren zur herstellung von sic-kristall
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
JP4786223B2 (ja) * 2005-05-24 2011-10-05 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP4933137B2 (ja) * 2006-04-28 2012-05-16 学校法人 名城大学 半導体および半導体製造方法
JP4959763B2 (ja) 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
CN101877309B (zh) * 2009-10-30 2011-09-21 西安电子科技大学 提高4H-SiC基面位错转化率的外延方法
US20110221039A1 (en) 2010-03-12 2011-09-15 Sinmat, Inc. Defect capping for reduced defect density epitaxial articles
JP5693946B2 (ja) 2010-03-29 2015-04-01 エア・ウォーター株式会社 単結晶３Ｃ−ＳｉＣ基板の製造方法
CN102859654B (zh) 2010-05-10 2016-01-13 三菱电机株式会社 碳化硅外延晶片及其制造方法、外延生长用碳化硅块状衬底及其制造方法
JP5678622B2 (ja) * 2010-12-03 2015-03-04 株式会社デンソー 炭化珪素単結晶の製造方法
JP5637086B2 (ja) * 2011-07-07 2014-12-10 三菱電機株式会社 エピタキシャルウエハ及び半導体素子
JP5597174B2 (ja) 2011-09-20 2014-10-01 株式会社日立製作所 アブレイダブルコーティングを有する部材およびガスタービン
JP2013251419A (ja) * 2012-06-01 2013-12-12 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
US20120280254A1 (en) * 2009-12-14 2012-11-08 Showa Denko K.K. Sic epitaxial wafer and method for manufacturing same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Surface Morphology of Silicon Carbide Epitaxial Films", J. A. Powell et al, J. Electronic Materials., Vol. 24(4), 1995, S. 295-301. *

Also Published As

Publication number Publication date
KR101607907B1 (ko) 2016-03-31
JP2014189422A (ja) 2014-10-06
CN104078331B (zh) 2017-03-01
US9752254B2 (en) 2017-09-05
US9903048B2 (en) 2018-02-27
CN104078331A (zh) 2014-10-01
US9422640B2 (en) 2016-08-23
DE102014205466A1 (de) 2014-10-02
KR20140117277A (ko) 2014-10-07
US20140295136A1 (en) 2014-10-02
US20160298262A1 (en) 2016-10-13
JP6123408B2 (ja) 2017-05-10
US20160298264A1 (en) 2016-10-13

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