KR101556628B1 - 고체 촬상 장치와 그 제조 방법, 및 카메라 - Google Patents
고체 촬상 장치와 그 제조 방법, 및 카메라 Download PDFInfo
- Publication number
- KR101556628B1 KR101556628B1 KR1020090005041A KR20090005041A KR101556628B1 KR 101556628 B1 KR101556628 B1 KR 101556628B1 KR 1020090005041 A KR1020090005041 A KR 1020090005041A KR 20090005041 A KR20090005041 A KR 20090005041A KR 101556628 B1 KR101556628 B1 KR 101556628B1
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- film
- semiconductor layer
- opening
- solid
- imaging device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008010904A JP4609497B2 (ja) | 2008-01-21 | 2008-01-21 | 固体撮像装置とその製造方法、及びカメラ |
| JPJP-P-2008-010904 | 2008-01-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090080490A KR20090080490A (ko) | 2009-07-24 |
| KR101556628B1 true KR101556628B1 (ko) | 2015-10-01 |
Family
ID=40637205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090005041A Expired - Fee Related KR101556628B1 (ko) | 2008-01-21 | 2009-01-21 | 고체 촬상 장치와 그 제조 방법, 및 카메라 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8300127B2 (enExample) |
| EP (1) | EP2081229B1 (enExample) |
| JP (1) | JP4609497B2 (enExample) |
| KR (1) | KR101556628B1 (enExample) |
| CN (2) | CN101494234B (enExample) |
| TW (1) | TWI407554B (enExample) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4609497B2 (ja) * | 2008-01-21 | 2011-01-12 | ソニー株式会社 | 固体撮像装置とその製造方法、及びカメラ |
| US8293122B2 (en) * | 2009-01-21 | 2012-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual metal for a backside package of backside illuminated image sensor |
| JP2010182790A (ja) * | 2009-02-04 | 2010-08-19 | Fujifilm Corp | 固体撮像素子、撮像装置、固体撮像素子の製造方法 |
| JP2010182789A (ja) * | 2009-02-04 | 2010-08-19 | Fujifilm Corp | 固体撮像素子、撮像装置、固体撮像素子の製造方法 |
| US8426938B2 (en) * | 2009-02-16 | 2013-04-23 | Samsung Electronics Co., Ltd. | Image sensor and method of fabricating the same |
| JP5985136B2 (ja) | 2009-03-19 | 2016-09-06 | ソニー株式会社 | 半導体装置とその製造方法、及び電子機器 |
| JP2010238848A (ja) * | 2009-03-31 | 2010-10-21 | Sony Corp | 固体撮像装置および電子機器 |
| JP2010267736A (ja) * | 2009-05-13 | 2010-11-25 | Panasonic Corp | 固体撮像素子 |
| JP5306123B2 (ja) * | 2009-09-11 | 2013-10-02 | 株式会社東芝 | 裏面照射型固体撮像装置 |
| JP2011086709A (ja) * | 2009-10-14 | 2011-04-28 | Toshiba Corp | 固体撮像装置及びその製造方法 |
| JP5442394B2 (ja) | 2009-10-29 | 2014-03-12 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP5568969B2 (ja) * | 2009-11-30 | 2014-08-13 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP2011124946A (ja) * | 2009-12-14 | 2011-06-23 | Panasonic Corp | 固体撮像素子およびこれを備えたカメラ |
| JP5566093B2 (ja) * | 2009-12-18 | 2014-08-06 | キヤノン株式会社 | 固体撮像装置 |
| JP5489705B2 (ja) * | 2009-12-26 | 2014-05-14 | キヤノン株式会社 | 固体撮像装置および撮像システム |
| KR20110077451A (ko) * | 2009-12-30 | 2011-07-07 | 삼성전자주식회사 | 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치 |
| JP5446915B2 (ja) * | 2010-01-21 | 2014-03-19 | セイコーエプソン株式会社 | 生体情報検出器及び生体情報測定装置 |
| JP5630027B2 (ja) * | 2010-01-29 | 2014-11-26 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器、半導体装置 |
| JP2011198854A (ja) * | 2010-03-17 | 2011-10-06 | Fujifilm Corp | 光電変換膜積層型固体撮像素子及び撮像装置 |
| JP5853351B2 (ja) * | 2010-03-25 | 2016-02-09 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び電子機器 |
| JP5663925B2 (ja) | 2010-03-31 | 2015-02-04 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| US8318580B2 (en) * | 2010-04-29 | 2012-11-27 | Omnivision Technologies, Inc. | Isolating wire bonding in integrated electrical components |
| US8748946B2 (en) * | 2010-04-29 | 2014-06-10 | Omnivision Technologies, Inc. | Isolated wire bond in integrated electrical components |
| JP5582879B2 (ja) * | 2010-06-09 | 2014-09-03 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP5327146B2 (ja) * | 2010-06-17 | 2013-10-30 | ソニー株式会社 | 固体撮像装置とその製造方法、及びカメラ |
| JP2010212735A (ja) * | 2010-06-17 | 2010-09-24 | Sony Corp | 固体撮像装置とその製造方法、及びカメラ |
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| TWI463646B (zh) * | 2010-07-16 | 2014-12-01 | United Microelectronics Corp | 背照式影像感測器 |
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| JP2012084609A (ja) * | 2010-10-07 | 2012-04-26 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
| JP5640630B2 (ja) * | 2010-10-12 | 2014-12-17 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
| JP5716347B2 (ja) * | 2010-10-21 | 2015-05-13 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5857399B2 (ja) * | 2010-11-12 | 2016-02-10 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| US9165970B2 (en) * | 2011-02-16 | 2015-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back side illuminated image sensor having isolated bonding pads |
| JP2012174800A (ja) * | 2011-02-18 | 2012-09-10 | Sony Corp | 半導体装置、製造装置、及び製造方法 |
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| CN103531597B (zh) * | 2012-07-03 | 2016-06-08 | 台湾积体电路制造股份有限公司 | 降低了侧壁引发的泄漏的背面照明图像传感器 |
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| US9247116B2 (en) * | 2014-03-14 | 2016-01-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device with light guiding structure |
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| KR102720747B1 (ko) * | 2015-03-12 | 2024-10-23 | 소니그룹주식회사 | 촬상 장치, 제조 방법 및 전자 기기 |
| JP6176313B2 (ja) * | 2015-12-02 | 2017-08-09 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| JP6650779B2 (ja) * | 2016-02-19 | 2020-02-19 | キヤノン株式会社 | 撮像装置、撮像システム、撮像装置の駆動方法 |
| US10109666B2 (en) * | 2016-04-13 | 2018-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pad structure for backside illuminated (BSI) image sensors |
| JP2018011018A (ja) * | 2016-07-15 | 2018-01-18 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| JP6236181B2 (ja) * | 2017-04-05 | 2017-11-22 | キヤノン株式会社 | 固体撮像装置およびその製造方法 |
| JP6663887B2 (ja) * | 2017-07-11 | 2020-03-13 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| WO2019017147A1 (ja) * | 2017-07-18 | 2019-01-24 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および撮像装置の製造方法 |
| US11227836B2 (en) | 2018-10-23 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad structure for enhanced bondability |
| CN110429091B (zh) * | 2019-07-29 | 2023-03-03 | 上海集成电路研发中心有限公司 | 一种具有挡光结构的全局像元结构及形成方法 |
| JP7603382B2 (ja) * | 2019-11-18 | 2024-12-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像素子の製造方法 |
| KR102784209B1 (ko) | 2020-01-30 | 2025-03-24 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| US11652127B2 (en) * | 2020-04-17 | 2023-05-16 | Taiwan Semiconductor Manufacturing Company Limited | Image sensor device and methods of forming the same |
| US20230411431A1 (en) * | 2022-05-17 | 2023-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked cmos image sensor and method of manufacturing the same |
| CN119208344B (zh) * | 2024-11-25 | 2025-04-04 | 浙江创芯集成电路有限公司 | 一种背照式工艺流程的优化方法及半导体器件 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006129298A (ja) | 2004-10-29 | 2006-05-18 | Sony Corp | Cmos固体撮像素子 |
| WO2007055141A1 (ja) | 2005-11-11 | 2007-05-18 | Nikon Corporation | 反射防止膜を有する固体撮像装置および表示装置並びにその製造方法 |
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| JP4776752B2 (ja) * | 2000-04-19 | 2011-09-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4040261B2 (ja) * | 2001-03-22 | 2008-01-30 | 富士フイルム株式会社 | 固体撮像装置とその駆動方法 |
| JP4383959B2 (ja) * | 2003-05-28 | 2009-12-16 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
| JP4046069B2 (ja) * | 2003-11-17 | 2008-02-13 | ソニー株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
| JP4432502B2 (ja) * | 2004-01-20 | 2010-03-17 | ソニー株式会社 | 半導体装置 |
| JP4389626B2 (ja) * | 2004-03-29 | 2009-12-24 | ソニー株式会社 | 固体撮像素子の製造方法 |
| JP2005347707A (ja) | 2004-06-07 | 2005-12-15 | Sony Corp | 固体撮像素子及びその製造方法 |
| JP2005353631A (ja) | 2004-06-08 | 2005-12-22 | Sony Corp | 固体撮像装置の製造方法 |
| JP4466213B2 (ja) * | 2004-06-14 | 2010-05-26 | ソニー株式会社 | 固体撮像装置の製造方法 |
| TWI382455B (zh) * | 2004-11-04 | 2013-01-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
| JP4714502B2 (ja) * | 2005-04-26 | 2011-06-29 | パナソニック株式会社 | 固体撮像装置 |
| KR100731128B1 (ko) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
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| JP2007299840A (ja) * | 2006-04-28 | 2007-11-15 | Fujifilm Corp | Ccd型固体撮像素子及びその製造方法 |
| JP4697068B2 (ja) | 2006-06-27 | 2011-06-08 | ソニー株式会社 | 無線通信システム、無線通信装置及び無線通信方法、並びにコンピュータ・プログラム |
| JP2008172580A (ja) * | 2007-01-12 | 2008-07-24 | Toshiba Corp | 固体撮像素子及び固体撮像装置 |
| JP4609497B2 (ja) * | 2008-01-21 | 2011-01-12 | ソニー株式会社 | 固体撮像装置とその製造方法、及びカメラ |
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- 2009-01-20 EP EP09000727A patent/EP2081229B1/en not_active Not-in-force
- 2009-01-21 KR KR1020090005041A patent/KR101556628B1/ko not_active Expired - Fee Related
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006129298A (ja) | 2004-10-29 | 2006-05-18 | Sony Corp | Cmos固体撮像素子 |
| WO2007055141A1 (ja) | 2005-11-11 | 2007-05-18 | Nikon Corporation | 反射防止膜を有する固体撮像装置および表示装置並びにその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101494234B (zh) | 2011-01-26 |
| CN102130140A (zh) | 2011-07-20 |
| TW200939465A (en) | 2009-09-16 |
| JP4609497B2 (ja) | 2011-01-12 |
| EP2081229B1 (en) | 2013-03-20 |
| KR20090080490A (ko) | 2009-07-24 |
| US20110261223A1 (en) | 2011-10-27 |
| JP2009176777A (ja) | 2009-08-06 |
| EP2081229A2 (en) | 2009-07-22 |
| US8363136B2 (en) | 2013-01-29 |
| EP2081229A3 (en) | 2010-08-11 |
| TWI407554B (zh) | 2013-09-01 |
| US20090185060A1 (en) | 2009-07-23 |
| US8300127B2 (en) | 2012-10-30 |
| CN102130140B (zh) | 2015-06-17 |
| CN101494234A (zh) | 2009-07-29 |
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