KR101537733B1 - 다결정 MgO 소결체 및 그 제조 방법과 스퍼터링용 MgO 타겟 - Google Patents
다결정 MgO 소결체 및 그 제조 방법과 스퍼터링용 MgO 타겟 Download PDFInfo
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- KR101537733B1 KR101537733B1 KR1020107019026A KR20107019026A KR101537733B1 KR 101537733 B1 KR101537733 B1 KR 101537733B1 KR 1020107019026 A KR1020107019026 A KR 1020107019026A KR 20107019026 A KR20107019026 A KR 20107019026A KR 101537733 B1 KR101537733 B1 KR 101537733B1
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- mgo
- sintered body
- sintering
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- mgo sintered
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/03—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite
- C04B35/04—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite based on magnesium oxide
- C04B35/043—Refractories from grain sized mixtures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/258—Alkali metal or alkaline earth metal or compound thereof
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Claims (10)
- Mg0 원료 분말을 1축 가압 소결하는 공정을 거쳐 얻어지는 다결정 Mg0 소결체로서, 다결정 Mg0 소결체 중의 Mg0의 X선 회절에 의한 강도비가 식(1)로 표시되는 (111)면의 비율 α(111)의 값에 관해, 1축 압력을 가한 면의 값을 αV(111), 1축 압력을 가한 면에 수직인 면의 값을 αH(111)이라고 했을 때, αV(111)/αH(111)>1.5인 다결정 MgO 소결체.
α(111)={-0.4434*(Ra)2+1.4434*Ra}…(1)
여기서, Ra=I(111)/(I(111)+I(200))
I(111): Mg0의 (111)면의 X선 회절 강도
I(200): MgO의 (200)면의 X선 회절 강도 - 제1항에 있어서,
평균 결정 입자경이 30μm이하인 다결정 MgO 소결체. - 제1항 또는 제2항에 있어서,
MgO 순도가 99.99% 이상인 다결정 MgO 소결체. - 제1항 또는 제2항에 기재된 다결정 MgO 소결체로 이루어지는 스퍼터링용 Mg0 타겟.
- 제1항에 기재된 다결정 Mg0 소결체를 제조하는 방법으로서, 입경이 1μm이하인 Mg0 원료 분말을 1축 가압 소결하는 공정과, 이 1축 가압 소결하는 공정 후에 산소가 0.05 부피% 이상 존재하는 분위기 하에서 1273K 이상의 온도에서 1분간 이상 열처리하는 공정을 포함하는 다결정 Mg0 소결체의 제조 방법.
- 제5항에 있어서,
MgO 원료 분말이 Mg(OH)2를 0.01~0.2 질량% 함유하는 다결정 Mg0 소결체의 제조 방법. - 제5항 또는 제6항에 있어서,
MgO 원료 분말의 불순물 농도가 0.01 질량% 미만인 다결정 Mg0 소결체의 제조 방법. - 제5항 또는 제6항에 있어서,
1축 가압 소결하는 공정에서 인가하는 압력이 5MPa 이상인 다결정 Mg0 소결체의 제조 방법. - 제3항에 기재된 다결정 MgO 소결체로 이루어지는 스퍼터링용 MgO 타겟.
- 제7항에 있어서, 1축 가압 소결하는 공정에서 인가하는 압력이 5MPa 이상인 다결정 MgO 소결체의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008016246A JP5231823B2 (ja) | 2008-01-28 | 2008-01-28 | 多結晶MgO焼結体及びその製造方法、並びにスパッタリング用MgOターゲット |
JPJP-P-2008-016246 | 2008-01-28 |
Publications (2)
Publication Number | Publication Date |
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KR20100129282A KR20100129282A (ko) | 2010-12-08 |
KR101537733B1 true KR101537733B1 (ko) | 2015-07-17 |
Family
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Application Number | Title | Priority Date | Filing Date |
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KR1020107019026A Active KR101537733B1 (ko) | 2008-01-28 | 2009-01-27 | 다결정 MgO 소결체 및 그 제조 방법과 스퍼터링용 MgO 타겟 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8454933B2 (ko) |
JP (1) | JP5231823B2 (ko) |
KR (1) | KR101537733B1 (ko) |
CN (1) | CN101925555A (ko) |
DE (1) | DE112009000280B4 (ko) |
TW (1) | TWI464133B (ko) |
WO (1) | WO2009096384A1 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102225862A (zh) * | 2011-04-22 | 2011-10-26 | 辽宁中大超导材料有限公司 | 一种提高烧结体氧化镁靶材体积密度的方法 |
WO2013005690A1 (ja) * | 2011-07-01 | 2013-01-10 | 宇部マテリアルズ株式会社 | スパッタリング用MgOターゲット |
JP5995419B2 (ja) * | 2011-09-01 | 2016-09-21 | 株式会社東芝 | スパッタリングターゲット及びそれを用いた磁気メモリの製造方法 |
CN103917687B (zh) * | 2011-11-04 | 2016-03-30 | 飞罗得陶瓷股份有限公司 | 溅射靶材及其制造方法 |
WO2013099832A1 (ja) * | 2011-12-27 | 2013-07-04 | Jx日鉱日石金属株式会社 | スパッタリング用焼結体酸化マグネシウムターゲット及びその製造方法 |
WO2014156497A1 (ja) * | 2013-03-29 | 2014-10-02 | Jx日鉱日石金属株式会社 | MgO-TiO焼結体ターゲット及びその製造方法 |
CN103243305B (zh) * | 2013-04-22 | 2015-06-10 | 兰州空间技术物理研究所 | 一种二次电子发射薄膜的制备方法 |
KR102188417B1 (ko) * | 2017-03-31 | 2020-12-08 | 제이엑스금속주식회사 | 스퍼터링 타깃 및 그 제조 방법 |
US10704139B2 (en) * | 2017-04-07 | 2020-07-07 | Applied Materials, Inc. | Plasma chamber target for reducing defects in workpiece during dielectric sputtering |
DE102017121452B9 (de) * | 2017-09-15 | 2024-04-04 | Refratechnik Holding Gmbh | Verfahren zur Herstellung einer porösen Sintermagnesia, Versatz zur Herstellung eines grobkeramischen feuerfesten Erzeugnisses mit einer Körnung aus der Sintermagnesia, Verwendung des Versatzes zur Herstellung des Erzeugnisses sowie Verfahren zur Herstellung des Erzeugnisses |
WO2019177086A1 (ja) * | 2018-03-15 | 2019-09-19 | 宇部マテリアルズ株式会社 | MgO焼結体及びスパッタリングターゲット |
KR102441220B1 (ko) | 2018-09-13 | 2022-09-08 | 제이엑스금속주식회사 | MgO 소결체 스퍼터링 타깃 |
JP7108046B2 (ja) * | 2018-10-10 | 2022-07-27 | Jx金属株式会社 | 酸化マグネシウムスパッタリングターゲット |
JP6855646B1 (ja) * | 2019-12-10 | 2021-04-07 | 黒崎播磨株式会社 | スライディングノズルプレート用耐火物及びその製造方法 |
US11227751B1 (en) | 2020-07-01 | 2022-01-18 | Applied Materials, Inc. | Plasma chamber target for reducing defects in workpiece during dielectric sputtering |
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JPH10158826A (ja) * | 1996-12-04 | 1998-06-16 | Mitsubishi Materials Corp | MgOターゲット及びその製造方法 |
JPH11139862A (ja) * | 1997-11-04 | 1999-05-25 | Sumitomo Metal Mining Co Ltd | 高密度MgO焼結体及びその製造方法 |
JP2006069811A (ja) * | 2004-08-31 | 2006-03-16 | Tateho Chem Ind Co Ltd | 単結晶酸化マグネシウム焼結体及びプラズマディスプレイパネル用保護膜 |
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2008
- 2008-01-28 JP JP2008016246A patent/JP5231823B2/ja active Active
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2009
- 2009-01-23 TW TW098102979A patent/TWI464133B/zh active
- 2009-01-27 KR KR1020107019026A patent/KR101537733B1/ko active Active
- 2009-01-27 US US12/811,541 patent/US8454933B2/en active Active
- 2009-01-27 DE DE112009000280.3T patent/DE112009000280B4/de active Active
- 2009-01-27 CN CN2009801034002A patent/CN101925555A/zh active Pending
- 2009-01-27 WO PCT/JP2009/051259 patent/WO2009096384A1/ja active Application Filing
Patent Citations (4)
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JPH10158826A (ja) * | 1996-12-04 | 1998-06-16 | Mitsubishi Materials Corp | MgOターゲット及びその製造方法 |
JPH11139862A (ja) * | 1997-11-04 | 1999-05-25 | Sumitomo Metal Mining Co Ltd | 高密度MgO焼結体及びその製造方法 |
KR20060056393A (ko) * | 2003-09-26 | 2006-05-24 | 가부시끼가이샤 도시바 | 스퍼터링 타깃과 그것을 이용한 Si 산화막의 제조 방법 |
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Also Published As
Publication number | Publication date |
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TWI464133B (zh) | 2014-12-11 |
WO2009096384A1 (ja) | 2009-08-06 |
DE112009000280B4 (de) | 2017-05-04 |
US8454933B2 (en) | 2013-06-04 |
KR20100129282A (ko) | 2010-12-08 |
US20100294657A1 (en) | 2010-11-25 |
JP5231823B2 (ja) | 2013-07-10 |
JP2009173502A (ja) | 2009-08-06 |
TW200948743A (en) | 2009-12-01 |
CN101925555A (zh) | 2010-12-22 |
DE112009000280T5 (de) | 2011-02-24 |
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