JP2009263187A - イットリア焼結体およびプラズマプロセス装置用部材 - Google Patents
イットリア焼結体およびプラズマプロセス装置用部材 Download PDFInfo
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- JP2009263187A JP2009263187A JP2008117505A JP2008117505A JP2009263187A JP 2009263187 A JP2009263187 A JP 2009263187A JP 2008117505 A JP2008117505 A JP 2008117505A JP 2008117505 A JP2008117505 A JP 2008117505A JP 2009263187 A JP2009263187 A JP 2009263187A
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- yttria
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- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 238000012545 processing Methods 0.000 title claims description 13
- 239000013078 crystal Substances 0.000 claims abstract description 84
- 230000001186 cumulative effect Effects 0.000 claims abstract description 28
- 238000009826 distribution Methods 0.000 claims abstract description 13
- 238000005452 bending Methods 0.000 claims description 14
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 239000002245 particle Substances 0.000 abstract description 31
- 210000002381 plasma Anatomy 0.000 description 48
- 238000000034 method Methods 0.000 description 36
- 239000000463 material Substances 0.000 description 33
- 238000005245 sintering Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 19
- 230000007797 corrosion Effects 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 16
- 239000000843 powder Substances 0.000 description 12
- 239000011230 binding agent Substances 0.000 description 10
- 238000010304 firing Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 239000008187 granular material Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000009694 cold isostatic pressing Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000001694 spray drying Methods 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010908 decantation Methods 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 238000001513 hot isostatic pressing Methods 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- -1 magnesium nitride Chemical class 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910001719 melilite Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
【解決手段】イットリアを99.9質量%以上含有し、気孔率が1%以下で、平均結晶粒径が3μm以下であり、かつ、下記(1)式から算出される累積頻度比が3以下であることを特徴とする、1〜20GHzの周波数における誘電損失tanδが1×10-4以下であるイットリア焼結体。累積頻度比=D90/D50・・・(1)但し、上記(1)式中の各記号の意味は下記の通りである。D90:結晶粒の個数基準での粒度分布の小粒径側からの累計が90%となる結晶粒径(μm)D50:結晶粒の個数基準での粒度分布の小粒径側からの累計が50%となる結晶粒径(μm)
【選択図】なし
Description
累積頻度比=D90/D50・・・(1)
但し、上記(1)式中の各記号の意味は下記の通りである。
D90:結晶粒の個数基準での粒度分布の小粒径側からの累計が90%となる結晶粒径(μm)
D50:結晶粒の個数基準での粒度分布の小粒径側からの累計が50%となる結晶粒径(μm)
累積頻度比=D90/D50・・・(1)
但し、上記(1)式中の各記号の意味は下記の通りである。
D90:結晶粒の個数基準での粒度分布の小粒径側からの累計が90%となる結晶粒径(μm)
D50:結晶粒の個数基準での粒度分布の小粒径側からの累計が50%となる結晶粒径(μm)
累積頻度比=D90/D50・・・(1)
但し、上記(1)式中の各記号の意味は下記の通りである。
D90:結晶粒の個数基準での粒度分布の小粒径側からの累計が90%となる結晶粒径(μm)
D50:結晶粒の個数基準での粒度分布の小粒径側からの累計が50%となる結晶粒径(μm)
焼結体試料を粉砕した後、溶解し、ICP発光法および炎光法で不純物元素(Al、Si、Mg、Ca、Fe、Cu、Cr、Ti、Ni、Mo、Li、Na、K)の含有量を測定した。検出された全不純物について検出定量値(ppm)を酸化物の質量に換算し、総量を100%から差し引いて酸化イットリウムの純度(%)を算出した。小数点第2位以下は切り捨てとした。
JIS R 1634に規定される方法に従い、開気孔率Pbを測定した。
焼結体を研削加工により任意の断面で切り出し、その断面を研磨(Ra:0.05μm程度)して鏡面として、それぞれ焼結体の(焼結温度−50)℃の温度で大気熱処理を実施して粒界部分を熱エッチングすることにより、鏡面仕上げ面の結晶粒界を可視化した後、SEM(250〜5000倍)により写真撮影を実施した。
粒径=(長径(作図できる最長線)+短径(長径線の垂直2等分線上の径))/2
JIS R1601に規定される方法に従い、室温における3点曲げ試験を実施し、その時の曲げ強度を測定した。
空洞共振器法にて1G〜20GHzの領域の誘電正接 (tanδ) を測定し、その最大値を採用した。
Claims (4)
- イットリアを99.9質量%以上含有し、気孔率が1%以下で、平均結晶粒径が3μm以下であり、かつ、下記(1)式から算出される累積頻度比が3以下であることを特徴とする、1〜20GHzの周波数における誘電損失tanδが1×10-4以下であるイットリア焼結体。
累積頻度比=D90/D50・・・(1)
但し、上記(1)式中の各記号の意味は下記の通りである。
D90:結晶粒の個数基準での粒度分布の小粒径側からの累計が90%となる結晶粒径(μm)
D50:結晶粒の個数基準での粒度分布の小粒径側からの累計が50%となる結晶粒径(μm) - 曲げ強度が180MPa以上であることを特徴とする、請求項1に記載の1〜20GHzの周波数における誘電損失tanδが1×10-4以下であるイットリア焼結体。
- 平均結晶粒径が2μm以下であることを特徴とする、請求項1または請求項2に記載の1〜20GHzの周波数における誘電損失tanδが1×10-4以下であるイットリア焼結体。
- プラズマプロセス装置に用いられる部材であって、少なくともハロゲン系腐食ガスまたはそのプラズマに曝される部分が、請求項1から請求項3までのいずれかに記載のイットリア焼結体で構成されていることを特徴とするプラズマプロセス装置用部材。
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JP2008117505A JP5466831B2 (ja) | 2008-04-28 | 2008-04-28 | イットリア焼結体およびプラズマプロセス装置用部材 |
KR1020107024538A KR101155799B1 (ko) | 2008-04-28 | 2008-10-08 | 이트리아 소결체 및 플라즈마 프로세스 장치용 부재 |
PCT/JP2008/068262 WO2009133638A1 (ja) | 2008-04-28 | 2008-10-08 | イットリア焼結体およびプラズマプロセス装置用部材 |
CN2008801288697A CN102015577B (zh) | 2008-04-28 | 2008-10-08 | 氧化钇烧结体和等离子体处理装置用构件 |
TW097138980A TWI394735B (zh) | 2008-04-28 | 2008-10-09 | Yttrium sintered body and components for plasma process equipment |
US12/913,073 US8158544B2 (en) | 2008-04-28 | 2010-10-27 | Yttria sintered body and component used for plasma processing apparatus |
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JP (1) | JP5466831B2 (ja) |
KR (1) | KR101155799B1 (ja) |
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JP7420600B2 (ja) | 2019-03-26 | 2024-01-23 | 日本特殊陶業株式会社 | 耐食性部材 |
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Also Published As
Publication number | Publication date |
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CN102015577B (zh) | 2013-12-18 |
KR101155799B1 (ko) | 2012-06-12 |
TWI394735B (zh) | 2013-05-01 |
WO2009133638A1 (ja) | 2009-11-05 |
KR20100135870A (ko) | 2010-12-27 |
US8158544B2 (en) | 2012-04-17 |
JP5466831B2 (ja) | 2014-04-09 |
US20110129684A1 (en) | 2011-06-02 |
TW200944488A (en) | 2009-11-01 |
CN102015577A (zh) | 2011-04-13 |
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