KR101512524B1 - 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리 - Google Patents

반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리 Download PDF

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KR101512524B1
KR101512524B1 KR1020097022752A KR20097022752A KR101512524B1 KR 101512524 B1 KR101512524 B1 KR 101512524B1 KR 1020097022752 A KR1020097022752 A KR 1020097022752A KR 20097022752 A KR20097022752 A KR 20097022752A KR 101512524 B1 KR101512524 B1 KR 101512524B1
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gas
showerhead electrode
plenum
electrode
fluid communication
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KR20100016083A (ko
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안드레아스 피셔
라진더 딘드사
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램 리써치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020097022752A 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리 Active KR101512524B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/730,298 US8069817B2 (en) 2007-03-30 2007-03-30 Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US11/730,298 2007-03-30
PCT/US2008/003970 WO2008121288A1 (en) 2007-03-30 2008-03-27 Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147032332A Division KR101570633B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리

Publications (2)

Publication Number Publication Date
KR20100016083A KR20100016083A (ko) 2010-02-12
KR101512524B1 true KR101512524B1 (ko) 2015-04-15

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Application Number Title Priority Date Filing Date
KR1020147032332A Active KR101570633B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리
KR1020097022752A Active KR101512524B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리

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KR1020147032332A Active KR101570633B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리

Country Status (6)

Country Link
US (2) US8069817B2 (enExample)
JP (2) JP5656626B2 (enExample)
KR (2) KR101570633B1 (enExample)
CN (1) CN101663417B (enExample)
TW (2) TWI503444B (enExample)
WO (1) WO2008121288A1 (enExample)

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JP2010524205A (ja) 2010-07-15
US20080242085A1 (en) 2008-10-02
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CN101663417A (zh) 2010-03-03
JP5826353B2 (ja) 2015-12-02
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