KR101503127B1 - 벌크 규소를 연마하기 위한 조성물 및 방법 - Google Patents

벌크 규소를 연마하기 위한 조성물 및 방법 Download PDF

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KR101503127B1
KR101503127B1 KR1020127009596A KR20127009596A KR101503127B1 KR 101503127 B1 KR101503127 B1 KR 101503127B1 KR 1020127009596 A KR1020127009596 A KR 1020127009596A KR 20127009596 A KR20127009596 A KR 20127009596A KR 101503127 B1 KR101503127 B1 KR 101503127B1
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weight
polishing composition
acid
silica
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KR20120064706A (ko
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브라이언 레이스
존 클라크
라몬 존스
제프리 길리랜드
마이클 화이트
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캐보트 마이크로일렉트로닉스 코포레이션
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/129Preparing bulk and homogeneous wafers by polishing

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020127009596A 2009-09-16 2010-09-13 벌크 규소를 연마하기 위한 조성물 및 방법 Active KR101503127B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/462,638 2009-09-16
US12/462,638 US8883034B2 (en) 2009-09-16 2009-09-16 Composition and method for polishing bulk silicon
PCT/US2010/048587 WO2011034808A2 (en) 2009-09-16 2010-09-13 Composition and method for polishing bulk silicon

Publications (2)

Publication Number Publication Date
KR20120064706A KR20120064706A (ko) 2012-06-19
KR101503127B1 true KR101503127B1 (ko) 2015-03-16

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KR1020127009596A Active KR101503127B1 (ko) 2009-09-16 2010-09-13 벌크 규소를 연마하기 위한 조성물 및 방법

Country Status (9)

Country Link
US (2) US8883034B2 (https=)
EP (1) EP2478064B1 (https=)
JP (1) JP5749719B2 (https=)
KR (1) KR101503127B1 (https=)
CN (1) CN102725373B (https=)
MY (1) MY169952A (https=)
SG (1) SG179158A1 (https=)
TW (1) TWI484007B (https=)
WO (1) WO2011034808A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
US9425037B2 (en) * 2011-01-21 2016-08-23 Cabot Microelectronics Corporation Silicon polishing compositions with improved PSD performance
JP5957802B2 (ja) * 2011-05-09 2016-07-27 日立化成株式会社 シリコン膜用cmpスラリー
CN102816530B (zh) * 2011-06-08 2016-01-27 安集微电子(上海)有限公司 一种化学机械抛光液
JP2013004839A (ja) * 2011-06-20 2013-01-07 Shin Etsu Handotai Co Ltd シリコンウェーハの研磨方法
US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
KR20160054466A (ko) 2013-09-10 2016-05-16 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
JP6250454B2 (ja) * 2014-03-27 2017-12-20 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物
US9873833B2 (en) 2014-12-29 2018-01-23 Versum Materials Us, Llc Etchant solutions and method of use thereof
US9758697B2 (en) * 2015-03-05 2017-09-12 Cabot Microelectronics Corporation Polishing composition containing cationic polymer additive
WO2016143323A1 (ja) * 2015-03-11 2016-09-15 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
US9631122B1 (en) 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
JP6572288B2 (ja) * 2017-11-22 2019-09-04 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物
JP7575878B2 (ja) * 2020-03-24 2024-10-30 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法、および研磨方法
TWI880128B (zh) * 2020-07-20 2025-04-11 美商Cmc材料有限責任公司 矽晶圓拋光組合物及方法
CN113182938B (zh) * 2021-03-01 2023-02-03 燕山大学 金刚石复相材料表面的加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222780A (ja) * 2000-11-24 2002-08-09 Wacker Siltronic G Fuer Halbleitermaterialien Ag シリコンウェハの表面ポリッシング法
JP2005347737A (ja) * 2004-05-07 2005-12-15 Nissan Chem Ind Ltd シリコンウェハー用研磨組成物
JP2006183037A (ja) * 2004-12-01 2006-07-13 Shin Etsu Handotai Co Ltd 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
JP2009054935A (ja) * 2007-08-29 2009-03-12 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物および研磨方法

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
ATE120433T1 (de) 1991-05-28 1995-04-15 Nalco Chemical Co Polierbreie aus silika mit geringem gehalt an natrium und an metallen.
US5230651A (en) * 1991-07-01 1993-07-27 Viskase Corporation Method and apparatus for severing shirred tubular food casing, and article
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
JP2628424B2 (ja) * 1992-01-24 1997-07-09 信越半導体株式会社 ウエーハ面取部の研磨方法及び装置
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5571373A (en) * 1994-05-18 1996-11-05 Memc Electronic Materials, Inc. Method of rough polishing semiconductor wafers to reduce surface roughness
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JPH11349925A (ja) * 1998-06-05 1999-12-21 Fujimi Inc エッジポリッシング用組成物
JP2000080350A (ja) * 1998-09-07 2000-03-21 Speedfam-Ipec Co Ltd 研磨用組成物及びそれによるポリッシング加工方法
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
US6319807B1 (en) * 2000-02-07 2001-11-20 United Microelectronics Corp. Method for forming a semiconductor device by using reverse-offset spacer process
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
US7582221B2 (en) * 2000-10-26 2009-09-01 Shin-Etsu Handotai Co., Ltd. Wafer manufacturing method, polishing apparatus, and wafer
KR100398141B1 (ko) * 2000-10-12 2003-09-13 아남반도체 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용한반도체소자의 제조방법
US6524167B1 (en) * 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
JP2002231700A (ja) * 2001-02-05 2002-08-16 Speedfam Co Ltd ナノトポグラフィ除去方法
JP3664676B2 (ja) * 2001-10-30 2005-06-29 信越半導体株式会社 ウェーハの研磨方法及びウェーハ研磨用研磨パッド
US6685757B2 (en) * 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
EP1394202A3 (en) * 2002-08-26 2004-03-31 JSR Corporation Composition for polishing pad and polishing pad therewith
JP2004128069A (ja) * 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
CN1816422B (zh) 2003-06-03 2011-06-22 尼克斯普勒公司 用于化学机械平整化的功能分级垫的合成
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US7419911B2 (en) * 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
KR100667690B1 (ko) * 2004-11-23 2007-01-12 주식회사 실트론 웨이퍼 슬라이싱 방법 및 장치
JP4845373B2 (ja) * 2004-12-07 2011-12-28 日立化成工業株式会社 研磨液及び研磨方法
KR100662546B1 (ko) * 2005-03-07 2006-12-28 제일모직주식회사 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법
EP1702965A3 (en) * 2005-03-17 2007-07-25 FUJIFILM Corporation Metal chemical mechanical polishing solution and polishing method
EP1871855B1 (en) * 2005-03-25 2010-03-24 DuPont Air Products NanoMaterials L.L.C. Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
TWI256142B (en) * 2005-07-21 2006-06-01 Siliconware Precision Industries Co Ltd Image sensor package, optical glass used thereby, and processing method thereof
JP5072204B2 (ja) 2005-08-31 2012-11-14 信越半導体株式会社 ウエーハの表面のナノトポグラフィを改善する方法及びワイヤソー装置
US7410899B2 (en) * 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
JP2007088258A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属研磨液及びそれを用いる研磨方法
US7265055B2 (en) * 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
EP1813656A3 (en) * 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
US7930058B2 (en) * 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
JP2008181955A (ja) 2007-01-23 2008-08-07 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2008277723A (ja) 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
JP5127316B2 (ja) * 2007-06-22 2013-01-23 旭化成ケミカルズ株式会社 化学機械研磨用組成物
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
CN101492592B (zh) 2008-01-25 2014-01-29 安集微电子(上海)有限公司 一种化学机械抛光液
US8017524B2 (en) 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
JP5297695B2 (ja) * 2008-05-30 2013-09-25 Sumco Techxiv株式会社 スラリー供給装置及び同装置を用いる半導体ウェーハの研磨方法
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222780A (ja) * 2000-11-24 2002-08-09 Wacker Siltronic G Fuer Halbleitermaterialien Ag シリコンウェハの表面ポリッシング法
JP2005347737A (ja) * 2004-05-07 2005-12-15 Nissan Chem Ind Ltd シリコンウェハー用研磨組成物
JP2006183037A (ja) * 2004-12-01 2006-07-13 Shin Etsu Handotai Co Ltd 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
JP2009054935A (ja) * 2007-08-29 2009-03-12 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物および研磨方法

Also Published As

Publication number Publication date
EP2478064A4 (en) 2017-07-05
CN102725373A (zh) 2012-10-10
WO2011034808A3 (en) 2011-07-28
KR20120064706A (ko) 2012-06-19
US9701871B2 (en) 2017-07-11
WO2011034808A2 (en) 2011-03-24
TWI484007B (zh) 2015-05-11
EP2478064A2 (en) 2012-07-25
US8883034B2 (en) 2014-11-11
US20110062376A1 (en) 2011-03-17
TW201129659A (en) 2011-09-01
CN102725373B (zh) 2015-05-06
JP2013505584A (ja) 2013-02-14
US20150028254A1 (en) 2015-01-29
JP5749719B2 (ja) 2015-07-15
SG179158A1 (en) 2012-05-30
EP2478064B1 (en) 2020-02-12
MY169952A (en) 2019-06-19

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