KR101497708B1 - 에칭제 - Google Patents
에칭제 Download PDFInfo
- Publication number
- KR101497708B1 KR101497708B1 KR1020080118152A KR20080118152A KR101497708B1 KR 101497708 B1 KR101497708 B1 KR 101497708B1 KR 1020080118152 A KR1020080118152 A KR 1020080118152A KR 20080118152 A KR20080118152 A KR 20080118152A KR 101497708 B1 KR101497708 B1 KR 101497708B1
- Authority
- KR
- South Korea
- Prior art keywords
- plating layer
- copper plating
- etchant
- etching
- weight
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052802 copper Inorganic materials 0.000 claims abstract description 77
- 239000010949 copper Substances 0.000 claims abstract description 77
- 238000005530 etching Methods 0.000 claims abstract description 67
- 238000007747 plating Methods 0.000 claims abstract description 58
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 35
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 34
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 30
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 11
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- 239000000654 additive Substances 0.000 claims abstract description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 7
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 4
- 150000007519 polyprotic acids Polymers 0.000 claims abstract description 4
- 125000003354 benzotriazolyl group Chemical class N1N=NC2=C1C=CC=C2* 0.000 claims abstract 4
- 229920006317 cationic polymer Polymers 0.000 claims description 9
- 229920000083 poly(allylamine) Polymers 0.000 claims description 9
- 230000002542 deteriorative effect Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 238000005507 spraying Methods 0.000 description 8
- -1 amide sulfate Chemical class 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000001737 promoting effect Effects 0.000 description 5
- 150000001565 benzotriazoles Chemical class 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 150000003852 triazoles Chemical class 0.000 description 3
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical group NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WWYDYZMNFQIYPT-UHFFFAOYSA-N ru78191 Chemical compound OC(=O)C(C(O)=O)C1=CC=CC=C1 WWYDYZMNFQIYPT-UHFFFAOYSA-N 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N sulfur dioxide Inorganic materials O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 150000003536 tetrazoles Chemical class 0.000 description 2
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 1
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Substances C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 1
- JNXJYDMXAJDPRV-UHFFFAOYSA-N 2-(benzotriazol-1-yl)butanedioic acid Chemical compound C1=CC=C2N(C(C(O)=O)CC(=O)O)N=NC2=C1 JNXJYDMXAJDPRV-UHFFFAOYSA-N 0.000 description 1
- RCTDIZASAFCTSA-UHFFFAOYSA-N 2-(benzotriazol-1-ylmethyl)butanedioic acid Chemical compound C1=CC=C2N(CC(CC(=O)O)C(O)=O)N=NC2=C1 RCTDIZASAFCTSA-UHFFFAOYSA-N 0.000 description 1
- WVIXTJQLKOLKTQ-UHFFFAOYSA-N 3-(benzotriazol-1-yl)propane-1,2-diol Chemical compound C1=CC=C2N(CC(O)CO)N=NC2=C1 WVIXTJQLKOLKTQ-UHFFFAOYSA-N 0.000 description 1
- BZOVBIIWPDQIHF-UHFFFAOYSA-N 3-hydroxy-2-methylbenzenesulfonic acid Chemical compound CC1=C(O)C=CC=C1S(O)(=O)=O BZOVBIIWPDQIHF-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KIWBPDUYBMNFTB-UHFFFAOYSA-N Ethyl hydrogen sulfate Chemical compound CCOS(O)(=O)=O KIWBPDUYBMNFTB-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- VRQIXCOIBHRSSE-UHFFFAOYSA-N acetic acid;prop-2-en-1-amine Chemical compound CC([O-])=O.[NH3+]CC=C VRQIXCOIBHRSSE-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 150000001556 benzimidazoles Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000001261 hydroxy acids Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- WGESLFUSXZBFQF-UHFFFAOYSA-N n-methyl-n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCN(C)CC=C WGESLFUSXZBFQF-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2007-306017 | 2007-11-27 | ||
JP2007306017 | 2007-11-27 | ||
JP2008190032A JP5273710B2 (ja) | 2007-11-27 | 2008-07-23 | エッチング剤 |
JPJP-P-2008-190032 | 2008-07-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090054926A KR20090054926A (ko) | 2009-06-01 |
KR101497708B1 true KR101497708B1 (ko) | 2015-03-02 |
Family
ID=40741804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080118152A KR101497708B1 (ko) | 2007-11-27 | 2008-11-26 | 에칭제 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP5273710B2 (ja) |
KR (1) | KR101497708B1 (ja) |
CN (1) | CN101445933B (ja) |
TW (1) | TWI411705B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5531708B2 (ja) | 2010-03-26 | 2014-06-25 | メック株式会社 | 銅のエッチング液および基板の製造方法 |
KR101825493B1 (ko) | 2010-04-20 | 2018-02-06 | 삼성디스플레이 주식회사 | 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법 |
CN104170532B (zh) * | 2012-03-16 | 2017-02-22 | 住友电木株式会社 | 层压板及印刷电路板的制造方法 |
JP6002011B2 (ja) * | 2012-11-26 | 2016-10-05 | 株式会社パイロットコーポレーション | ボールペン |
JP5576525B1 (ja) | 2013-03-29 | 2014-08-20 | メルテックス株式会社 | 銅エッチング液 |
US9301399B2 (en) * | 2013-04-23 | 2016-03-29 | Mitsubishi Gas Chemical Company, Inc. | Method of treating wiring substrate and wiring substrate manufactured by the same |
JP6424559B2 (ja) | 2013-11-22 | 2018-11-21 | 三菱瓦斯化学株式会社 | エッチング用組成物及びそれを用いたプリント配線板の製造方法 |
JP2016119790A (ja) * | 2014-12-22 | 2016-06-30 | 株式会社ノーリツ | 力率改善回路、スイッチング電源装置およびそれを備えた給湯装置 |
CN104928667B (zh) * | 2015-06-08 | 2018-07-20 | 华南理工大学 | 一种基于功能化离子液体的印制电路板处理用棕化液 |
CN108456885B (zh) * | 2017-02-13 | 2022-08-23 | 东进世美肯株式会社 | 蚀刻液组合物以及利用其的金属布线形成方法 |
JP6746518B2 (ja) * | 2017-03-10 | 2020-08-26 | 株式会社Adeka | エッチング液組成物及びエッチング方法 |
JP6949306B2 (ja) | 2017-07-14 | 2021-10-13 | メルテックス株式会社 | 銅エッチング液 |
EP3518631A1 (en) * | 2018-01-29 | 2019-07-31 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Anisotropic etching using highly branched polymers |
CN110913596A (zh) * | 2019-12-10 | 2020-03-24 | 深圳市板明科技有限公司 | 一种减铜微蚀剂及其制备方法 |
KR20220033141A (ko) * | 2020-09-09 | 2022-03-16 | 동우 화인켐 주식회사 | 실리콘 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판 |
CA3110357A1 (en) * | 2021-02-25 | 2022-08-25 | Sixring Inc. | Modified sulfuric acid and uses thereof |
KR20220126436A (ko) * | 2021-03-09 | 2022-09-16 | 주식회사 이엔에프테크놀로지 | 디스플레이 기판용 식각액 |
CN114016031B (zh) * | 2021-10-22 | 2024-05-17 | 深圳市松柏实业发展有限公司 | 快速蚀刻液及其制备方法 |
CN115141629B (zh) * | 2022-06-15 | 2023-06-02 | 湖北兴福电子材料股份有限公司 | TiN去除液 |
Citations (4)
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---|---|---|---|---|
JP2002060980A (ja) * | 2000-08-23 | 2002-02-28 | Nippon Peroxide Co Ltd | 銅及び銅合金の表面粗面化処理液 |
KR20050110699A (ko) * | 2003-03-25 | 2005-11-23 | 아토테크더치랜드게엠베하 | 구리 표면 에칭용 용액 및 구리 표면 상에 금속을침착시키는 방법 |
KR20070112273A (ko) * | 2005-04-14 | 2007-11-22 | 쇼와 덴코 가부시키가이샤 | 연마 조성물 |
KR20080061386A (ko) * | 2005-09-30 | 2008-07-02 | 캐보트 마이크로일렉트로닉스 코포레이션 | 표면 평탄화를 위한 조성물 및 방법 |
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JP2884935B2 (ja) * | 1992-08-17 | 1999-04-19 | 日立化成工業株式会社 | ニッケル又はニッケル合金のエッチング液及びこのエッチング液を用いる方法並びにこのエッチング液を用いて配線板を製造する方法 |
JPH11140669A (ja) * | 1997-11-04 | 1999-05-25 | Ebara Densan Ltd | エッチング液 |
JP2005150757A (ja) * | 1998-08-31 | 2005-06-09 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
JP2003338676A (ja) * | 2002-05-20 | 2003-11-28 | Mec Kk | 銅配線基板の製造方法 |
TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
JP2004031446A (ja) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
JP4241018B2 (ja) * | 2002-12-06 | 2009-03-18 | メック株式会社 | エッチング液 |
JP4434632B2 (ja) * | 2003-06-10 | 2010-03-17 | 三菱瓦斯化学株式会社 | プリント配線板の製造方法 |
TWI288046B (en) * | 2003-11-14 | 2007-10-11 | Showa Denko Kk | Polishing composition and polishing method |
JP4280171B2 (ja) * | 2004-01-27 | 2009-06-17 | 日本パーオキサイド株式会社 | 銅及び銅合金の表面粗化処理液 |
JP4488188B2 (ja) * | 2004-06-29 | 2010-06-23 | 三菱瓦斯化学株式会社 | セミアディティブ法プリント配線基板製造用エッチング液 |
JP4430990B2 (ja) * | 2004-06-29 | 2010-03-10 | 株式会社荏原電産 | セミアディティブ工法用回路形成エッチング液 |
JP2006210492A (ja) * | 2005-01-26 | 2006-08-10 | Hitachi Chem Co Ltd | プリント配線板の製造方法 |
WO2007047454A2 (en) * | 2005-10-14 | 2007-04-26 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
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2008
- 2008-07-23 JP JP2008190032A patent/JP5273710B2/ja active Active
- 2008-11-13 TW TW097143843A patent/TWI411705B/zh not_active IP Right Cessation
- 2008-11-25 CN CN2008101791141A patent/CN101445933B/zh not_active Expired - Fee Related
- 2008-11-26 KR KR1020080118152A patent/KR101497708B1/ko active IP Right Grant
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002060980A (ja) * | 2000-08-23 | 2002-02-28 | Nippon Peroxide Co Ltd | 銅及び銅合金の表面粗面化処理液 |
KR20050110699A (ko) * | 2003-03-25 | 2005-11-23 | 아토테크더치랜드게엠베하 | 구리 표면 에칭용 용액 및 구리 표면 상에 금속을침착시키는 방법 |
KR20070112273A (ko) * | 2005-04-14 | 2007-11-22 | 쇼와 덴코 가부시키가이샤 | 연마 조성물 |
KR20080061386A (ko) * | 2005-09-30 | 2008-07-02 | 캐보트 마이크로일렉트로닉스 코포레이션 | 표면 평탄화를 위한 조성물 및 방법 |
Also Published As
Publication number | Publication date |
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TWI411705B (zh) | 2013-10-11 |
TW200923130A (en) | 2009-06-01 |
JP5273710B2 (ja) | 2013-08-28 |
CN101445933B (zh) | 2013-04-10 |
JP5505847B2 (ja) | 2014-05-28 |
JP2013167024A (ja) | 2013-08-29 |
CN101445933A (zh) | 2009-06-03 |
KR20090054926A (ko) | 2009-06-01 |
JP2009149971A (ja) | 2009-07-09 |
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