KR101485972B1 - 옵셋 적층된 다이를 구비한 집적회로 패키지 시스템 - Google Patents

옵셋 적층된 다이를 구비한 집적회로 패키지 시스템 Download PDF

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Publication number
KR101485972B1
KR101485972B1 KR20070129217A KR20070129217A KR101485972B1 KR 101485972 B1 KR101485972 B1 KR 101485972B1 KR 20070129217 A KR20070129217 A KR 20070129217A KR 20070129217 A KR20070129217 A KR 20070129217A KR 101485972 B1 KR101485972 B1 KR 101485972B1
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South Korea
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integrated circuit
circuit die
die
layer
interdie
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KR20070129217A
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Korean (ko)
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KR20080058186A (ko
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치 키옹 친
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스태츠 칩팩 엘티디
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Assigned to 주식회사 한국씨티은행 reassignment 주식회사 한국씨티은행 근질권설정등록 Assignors: 스태츠 칩팩 피티이. 엘티디.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/231—Configurations of stacked chips the stacked chips being on both top and bottom sides of an auxiliary carrier having no electrical connection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Semiconductor Integrated Circuits (AREA)
  • Die Bonding (AREA)
KR20070129217A 2006-12-20 2007-12-12 옵셋 적층된 다이를 구비한 집적회로 패키지 시스템 Active KR101485972B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US87113406P 2006-12-20 2006-12-20
US60/871,134 2006-12-20
US11/950,216 2007-12-04
US11/950,216 US8242607B2 (en) 2006-12-20 2007-12-04 Integrated circuit package system with offset stacked die and method of manufacture thereof

Publications (2)

Publication Number Publication Date
KR20080058186A KR20080058186A (ko) 2008-06-25
KR101485972B1 true KR101485972B1 (ko) 2015-01-23

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KR20070129217A Active KR101485972B1 (ko) 2006-12-20 2007-12-12 옵셋 적층된 다이를 구비한 집적회로 패키지 시스템

Country Status (4)

Country Link
US (1) US8242607B2 (https=)
JP (1) JP5263811B2 (https=)
KR (1) KR101485972B1 (https=)
TW (1) TWI499028B (https=)

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KR100886717B1 (ko) * 2007-10-16 2009-03-04 주식회사 하이닉스반도체 적층 반도체 패키지 및 이의 제조 방법
TWI415201B (zh) * 2007-11-30 2013-11-11 矽品精密工業股份有限公司 多晶片堆疊結構及其製法
JP5150243B2 (ja) * 2007-12-27 2013-02-20 株式会社東芝 半導体記憶装置
JP5207868B2 (ja) 2008-02-08 2013-06-12 ルネサスエレクトロニクス株式会社 半導体装置
US8178978B2 (en) 2008-03-12 2012-05-15 Vertical Circuits, Inc. Support mounted electrically interconnected die assembly
US9153517B2 (en) 2008-05-20 2015-10-06 Invensas Corporation Electrical connector between die pad and z-interconnect for stacked die assemblies
JP4776675B2 (ja) * 2008-10-31 2011-09-21 株式会社東芝 半導体メモリカード
KR20100049283A (ko) * 2008-11-03 2010-05-12 삼성전자주식회사 반도체 패키지 및 그 제조 방법
JP5126002B2 (ja) * 2008-11-11 2013-01-23 セイコーエプソン株式会社 半導体装置及び半導体装置の製造方法
KR101013563B1 (ko) * 2009-02-25 2011-02-14 주식회사 하이닉스반도체 스택 패키지
KR20100134354A (ko) * 2009-06-15 2010-12-23 삼성전자주식회사 반도체 패키지, 스택 모듈, 카드 및 전자 시스템
CN102473697B (zh) * 2009-06-26 2016-08-10 伊文萨思公司 曲折配置的堆叠裸片的电互连
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KR20110044077A (ko) * 2009-10-22 2011-04-28 삼성전자주식회사 반도체 패키지 구조물
WO2011056668A2 (en) 2009-10-27 2011-05-12 Vertical Circuits, Inc. Selective die electrical insulation additive process
CN103098206A (zh) * 2010-03-18 2013-05-08 莫塞德技术公司 具有偏移裸片叠层的多芯片封装及其制造方法
KR20110138789A (ko) * 2010-06-22 2011-12-28 하나 마이크론(주) 적층형 반도체 패키지
US8502375B2 (en) 2010-06-29 2013-08-06 Sandisk Technologies Inc. Corrugated die edge for stacked die semiconductor package
KR101686553B1 (ko) * 2010-07-12 2016-12-14 삼성전자 주식회사 반도체 패키지 및 패키지 온 패키지
KR20120024099A (ko) * 2010-09-06 2012-03-14 삼성전자주식회사 멀티-칩 패키지 및 그의 제조 방법
KR101213288B1 (ko) 2011-01-25 2012-12-18 하나 마이크론(주) 계단식 적층구조를 갖는 반도체 패키지 및 그의 제조방법
WO2013071399A1 (en) * 2011-11-14 2013-05-23 Mosaid Technologies Incorporated Package having stacked memory dies with serially connected buffer dies
CN104769714B (zh) 2013-02-26 2018-10-26 晟碟信息科技（上海）有限公司 包括交替形成台阶的半导体裸芯堆叠的半导体器件
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US9825002B2 (en) 2015-07-17 2017-11-21 Invensas Corporation Flipped die stack
US9490195B1 (en) 2015-07-17 2016-11-08 Invensas Corporation Wafer-level flipped die stacks with leadframes or metal foil interconnects
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US9508691B1 (en) 2015-12-16 2016-11-29 Invensas Corporation Flipped die stacks with multiple rows of leadframe interconnects
US10566310B2 (en) 2016-04-11 2020-02-18 Invensas Corporation Microelectronic packages having stacked die and wire bond interconnects
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JP2002359346A (ja) 2001-05-30 2002-12-13 Sharp Corp 半導体装置および半導体チップの積層方法
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Also Published As

Publication number Publication date
US8242607B2 (en) 2012-08-14
TWI499028B (zh) 2015-09-01
US20080150158A1 (en) 2008-06-26
TW200832672A (en) 2008-08-01
KR20080058186A (ko) 2008-06-25
JP2008160119A (ja) 2008-07-10
JP5263811B2 (ja) 2013-08-14

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