KR101477833B1 - 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법 - Google Patents

노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법 Download PDF

Info

Publication number
KR101477833B1
KR101477833B1 KR1020097027565A KR20097027565A KR101477833B1 KR 101477833 B1 KR101477833 B1 KR 101477833B1 KR 1020097027565 A KR1020097027565 A KR 1020097027565A KR 20097027565 A KR20097027565 A KR 20097027565A KR 101477833 B1 KR101477833 B1 KR 101477833B1
Authority
KR
South Korea
Prior art keywords
moving body
exposure
wafer
moving
respect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097027565A
Other languages
English (en)
Korean (ko)
Other versions
KR20100106201A (ko
Inventor
유이치 시바자키
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20100106201A publication Critical patent/KR20100106201A/ko
Application granted granted Critical
Publication of KR101477833B1 publication Critical patent/KR101477833B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975Assembly, maintenance, transport or storage of apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Multimedia (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Transform (AREA)
KR1020097027565A 2007-12-28 2008-12-29 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법 Expired - Fee Related KR101477833B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JPJP-P-2007-340460 2007-12-28
JPJP-P-2007-340641 2007-12-28
JP2007340641 2007-12-28
JP2007340460 2007-12-28
JPJP-P-2008-110766 2008-04-21
JP2008110766 2008-04-21
JPJP-P-2008-303735 2008-11-28
JP2008303735 2008-11-28

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020137022078A Division KR101497862B1 (ko) 2007-12-28 2008-12-29 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법
KR1020137022077A Division KR101525342B1 (ko) 2007-12-28 2008-12-29 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20100106201A KR20100106201A (ko) 2010-10-01
KR101477833B1 true KR101477833B1 (ko) 2014-12-30

Family

ID=40823980

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020097027565A Expired - Fee Related KR101477833B1 (ko) 2007-12-28 2008-12-29 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법
KR1020137022078A Expired - Fee Related KR101497862B1 (ko) 2007-12-28 2008-12-29 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법
KR1020137022077A Expired - Fee Related KR101525342B1 (ko) 2007-12-28 2008-12-29 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020137022078A Expired - Fee Related KR101497862B1 (ko) 2007-12-28 2008-12-29 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법
KR1020137022077A Expired - Fee Related KR101525342B1 (ko) 2007-12-28 2008-12-29 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법

Country Status (6)

Country Link
US (5) US9229333B2 (enExample)
JP (12) JP5088588B2 (enExample)
KR (3) KR101477833B1 (enExample)
CN (4) CN102566320B (enExample)
TW (7) TWI640840B (enExample)
WO (1) WO2009084244A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101648289B1 (ko) 2006-08-31 2016-08-12 가부시키가이샤 니콘 이동체 구동 시스템 및 이동체 구동 방법, 패턴 형성 장치 및 방법, 노광 장치 및 방법, 디바이스 제조 방법, 그리고 결정 방법
TWI597585B (zh) * 2006-08-31 2017-09-01 尼康股份有限公司 Exposure method and exposure apparatus, and device manufacturing method
US20080094592A1 (en) 2006-08-31 2008-04-24 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
EP2071614B1 (en) 2006-09-01 2018-06-20 Nikon Corporation Exposure method and apparatus
SG174102A1 (en) 2006-09-01 2011-09-29 Nikon Corp Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
CN102566320B (zh) 2007-12-28 2015-01-28 株式会社尼康 曝光装置、曝光方法以及器件制造方法
US8493547B2 (en) * 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8514395B2 (en) * 2009-08-25 2013-08-20 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
JP2011168028A (ja) * 2010-02-22 2011-09-01 Ricoh Co Ltd 画像形成装置
CN102608861A (zh) * 2011-01-19 2012-07-25 上海华虹Nec电子有限公司 一种改善硅片周边光刻胶形貌的方法
CN102540896B (zh) * 2012-02-29 2013-07-17 清华大学 化学机械抛光传输机器人的非线性模糊结合递归控制系统
CN102591205B (zh) * 2012-02-29 2013-07-31 清华大学 化学机械抛光传输机器人的递归优化控制系统
WO2014029601A1 (en) 2012-08-23 2014-02-27 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and displacement measurement system
US9958424B2 (en) * 2012-10-01 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of identifying airborne molecular contamination source
WO2014054689A1 (ja) 2012-10-02 2014-04-10 株式会社ニコン 移動体装置、露光装置、及びデバイス製造方法
US9772564B2 (en) * 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
KR102080875B1 (ko) * 2013-01-23 2020-04-16 삼성디스플레이 주식회사 스테이지 이송 장치 및 이를 이용한 스테이지 위치 측정 방법
CN104111596A (zh) * 2013-04-16 2014-10-22 上海微电子装备有限公司 用于光刻设备的全局调平的装置和方法
JP6193611B2 (ja) 2013-04-30 2017-09-06 キヤノン株式会社 描画装置、及び物品の製造方法
JP2014216631A (ja) * 2013-04-30 2014-11-17 キヤノン株式会社 描画装置、及び物品の製造方法
KR102688211B1 (ko) 2015-02-23 2024-07-24 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법
CN111158220A (zh) 2015-02-23 2020-05-15 株式会社尼康 测量装置及方法、光刻系统、曝光装置及方法
TWI702474B (zh) 2015-02-23 2020-08-21 日商尼康股份有限公司 基板處理系統及基板處理方法、以及元件製造方法
CN105045042B (zh) * 2015-04-23 2017-06-16 清华大学 一种硅片台曝光区域六自由度位移测量方法
HK1248833A1 (zh) * 2015-09-30 2018-10-19 株式会社尼康 曝光装置及曝光方法、以及平面显示器制造方法
HK1249192A1 (zh) 2015-09-30 2018-10-26 株式会社尼康 曝光装置、平面显示器之制造方法、以及元件制造方法
CN205427436U (zh) * 2016-03-23 2016-08-03 北京京东方光电科技有限公司 显示器件的对位检测设备及曝光工艺系统
US11099490B2 (en) * 2016-07-07 2021-08-24 Asml Netherlands B.V. Inspection substrate and an inspection method
TWI604290B (zh) * 2016-10-31 2017-11-01 智泰科技股份有限公司 具有空間位置誤差補償的數值控制工具機
JP6909021B2 (ja) * 2017-03-07 2021-07-28 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
JP6945316B2 (ja) * 2017-03-24 2021-10-06 キヤノン株式会社 検出装置、パターン形成装置、取得方法、検出方法、および物品製造方法
CN106950801A (zh) * 2017-04-16 2017-07-14 合肥芯碁微电子装备有限公司 一种无掩膜激光直写光刻设备的快速边缘曝光方法
US10522557B2 (en) 2017-10-30 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Surface topography by forming spacer-like components
CN109957504B (zh) * 2017-12-14 2022-08-02 长春长光华大智造测序设备有限公司 便于初始对准的高通量基因测序仪硅片及初始对准方法
KR20190092906A (ko) 2018-01-31 2019-08-08 김믿음 칼날 배수구망
US10591815B2 (en) * 2018-06-28 2020-03-17 Applied Materials, Inc. Shifting of patterns to reduce line waviness
KR102592792B1 (ko) * 2018-08-23 2023-10-24 에이에스엠엘 네델란즈 비.브이. 대상물 로딩 프로세스를 캘리브레이션하는 스테이지 장치 및 방법
JP7278138B2 (ja) * 2019-04-18 2023-05-19 キヤノン株式会社 基板処理装置、物品製造方法、基板処理方法、基板処理システム、管理装置、およびプログラム
US11764111B2 (en) * 2019-10-24 2023-09-19 Texas Instruments Incorporated Reducing cross-wafer variability for minimum width resistors
JP7495814B2 (ja) * 2020-05-13 2024-06-05 キヤノン株式会社 インプリント装置、および物品の製造方法
JP2023000112A (ja) * 2021-06-17 2023-01-04 キオクシア株式会社 計測装置および計測プログラム
CN113506746B (zh) * 2021-06-28 2024-03-19 华虹半导体(无锡)有限公司 解决超级结工艺打标区域高台阶差的方法
JP7753075B2 (ja) * 2021-12-06 2025-10-14 キヤノン株式会社 光源装置、リソグラフィ装置、及び物品の製造方法
CN114256207A (zh) * 2021-12-13 2022-03-29 浙江大学杭州国际科创中心 晶圆表面标记制作方法及扫描电镜内晶圆的定位方法
WO2024003608A1 (en) * 2022-06-26 2024-01-04 Nova Ltd Moving apparatus along multiple axes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0545886A (ja) * 1991-08-12 1993-02-26 Nikon Corp 角形基板の露光装置
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP5376267B2 (ja) 2007-12-28 2013-12-25 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JPH07270122A (ja) * 1994-03-30 1995-10-20 Canon Inc 変位検出装置、該変位検出装置を備えた露光装置およびデバイスの製造方法
JPH07335529A (ja) * 1994-06-09 1995-12-22 Nikon Corp 投影露光装置
US5715064A (en) 1994-06-17 1998-02-03 International Business Machines Corporation Step and repeat apparatus having enhanced accuracy and increased throughput
US5677758A (en) 1995-02-09 1997-10-14 Mrs Technology, Inc. Lithography System using dual substrate stages
JP3237522B2 (ja) 1996-02-05 2001-12-10 ウシオ電機株式会社 ウエハ周辺露光方法および装置
JP4029180B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
KR20030096435A (ko) 1996-11-28 2003-12-31 가부시키가이샤 니콘 노광장치 및 노광방법
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
EP0900412B1 (en) 1997-03-10 2005-04-06 ASML Netherlands B.V. Lithographic apparatus comprising a positioning device having two object holders
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
EP1063742A4 (en) 1998-03-11 2005-04-20 Nikon Corp ULTRAVIOLET LASER DEVICE AND EXPOSURE APPARATUS COMPRISING SUCH A ULTRAVIOLET LASER DEVICE
JP2000068192A (ja) 1998-08-18 2000-03-03 Nikon Corp 露光装置、露光方法及び位置検出方法
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
TWI223734B (en) 1999-12-21 2004-11-11 Asml Netherlands Bv Crash prevention in positioning apparatus for use in lithographic projection apparatus
KR20010085493A (ko) 2000-02-25 2001-09-07 시마무라 기로 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US7561270B2 (en) * 2000-08-24 2009-07-14 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
WO2002019401A1 (en) * 2000-08-29 2002-03-07 Nikon Corporation Exposure method and device
US6611316B2 (en) 2001-02-27 2003-08-26 Asml Holding N.V. Method and system for dual reticle image exposure
JP2002280283A (ja) * 2001-03-16 2002-09-27 Canon Inc 基板処理装置
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JP2003037153A (ja) * 2001-07-25 2003-02-07 Nikon Corp 保持装置、ステージ装置、および露光装置ならびに半導体デバイス
KR20050025626A (ko) * 2002-07-31 2005-03-14 가부시키가이샤 니콘 위치계측방법, 위치제어방법, 노광방법 및 노광장치,그리고 디바이스 제조방법
TWI242691B (en) 2002-08-23 2005-11-01 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
KR100967835B1 (ko) 2002-12-13 2010-07-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 층상 스폿 조사 방법 및 장치에서의 액체 제거
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
KR101442361B1 (ko) 2003-02-26 2014-09-23 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
EP2722702A3 (en) 2003-05-06 2014-07-23 Nikon Corporation Projection optical system, and exposure apparatus and exposure method
KR101134957B1 (ko) 2003-06-19 2012-04-10 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
JP4492239B2 (ja) * 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US7102729B2 (en) * 2004-02-03 2006-09-05 Asml Netherlands B.V. Lithographic apparatus, measurement system, and device manufacturing method
JP2005317916A (ja) 2004-03-30 2005-11-10 Canon Inc 露光装置及びデバイス製造方法
US7566893B2 (en) 2004-06-22 2009-07-28 Nikon Corporation Best focus detection method, exposure method, and exposure apparatus
KR100550352B1 (ko) * 2004-07-02 2006-02-08 삼성전자주식회사 반도체 기판의 노광방법 및 이를 이용하는 노광 장치
JP4747545B2 (ja) * 2004-09-30 2011-08-17 株式会社ニコン ステージ装置及び露光装置並びにデバイス製造方法
TWI538013B (zh) * 2004-11-18 2016-06-11 尼康股份有限公司 A position measuring method, a position control method, a measuring method, a loading method, an exposure method and an exposure apparatus, and a device manufacturing method
KR100585170B1 (ko) * 2004-12-27 2006-06-02 삼성전자주식회사 트윈 기판 스테이지를 구비한 스캐너 장치, 이를 포함하는반도체 사진 설비 및 상기 설비를 이용한 반도체 소자의제조방법
US20060139595A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness
JP2006278820A (ja) * 2005-03-30 2006-10-12 Nikon Corp 露光方法及び装置
JP4677267B2 (ja) * 2005-04-04 2011-04-27 キヤノン株式会社 平面ステージ装置及び露光装置
US7161659B2 (en) * 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7515281B2 (en) 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100555568C (zh) 2005-04-28 2009-10-28 株式会社尼康 曝光方法及曝光装置、以及元件制造方法
JP4410216B2 (ja) 2005-05-24 2010-02-03 エーエスエムエル ネザーランズ ビー.ブイ. 2ステージ・リソグラフィ装置及びデバイス製造方法
TWI457977B (zh) * 2005-12-28 2014-10-21 尼康股份有限公司 A pattern forming method and a pattern forming apparatus, and an element manufacturing method
KR101442381B1 (ko) 2006-01-19 2014-09-22 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 패턴 형성 장치, 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
EP3115844B1 (en) * 2006-02-21 2018-08-15 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US8908145B2 (en) 2006-02-21 2014-12-09 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
KR101400571B1 (ko) 2006-02-21 2014-05-28 가부시키가이샤 니콘 측정 장치 및 방법, 처리 장치 및 방법, 패턴 형성 장치 및방법, 노광 장치 및 방법, 그리고 디바이스 제조 방법
US7310132B2 (en) 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI454859B (zh) * 2006-03-30 2014-10-01 尼康股份有限公司 移動體裝置、曝光裝置與曝光方法以及元件製造方法
CN100504614C (zh) * 2006-04-14 2009-06-24 上海微电子装备有限公司 步进扫描光刻机双台交换定位系统
US7483120B2 (en) 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
TWI425318B (zh) * 2006-06-09 2014-02-01 尼康股份有限公司 移動體裝置、曝光裝置和曝光方法以及元件製造方法
US20080094592A1 (en) 2006-08-31 2008-04-24 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
TWI597585B (zh) 2006-08-31 2017-09-01 尼康股份有限公司 Exposure method and exposure apparatus, and device manufacturing method
KR101648289B1 (ko) 2006-08-31 2016-08-12 가부시키가이샤 니콘 이동체 구동 시스템 및 이동체 구동 방법, 패턴 형성 장치 및 방법, 노광 장치 및 방법, 디바이스 제조 방법, 그리고 결정 방법
EP2071614B1 (en) 2006-09-01 2018-06-20 Nikon Corporation Exposure method and apparatus
SG174102A1 (en) 2006-09-01 2011-09-29 Nikon Corp Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
CN100468212C (zh) * 2006-09-22 2009-03-11 上海微电子装备有限公司 双台定位交换系统
JP2007274881A (ja) * 2006-12-01 2007-10-18 Nikon Corp 移動体装置、微動体及び露光装置
US7903866B2 (en) * 2007-03-29 2011-03-08 Asml Netherlands B.V. Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0545886A (ja) * 1991-08-12 1993-02-26 Nikon Corp 角形基板の露光装置
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
KR20080066836A (ko) * 2005-11-09 2008-07-16 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP5376267B2 (ja) 2007-12-28 2013-12-25 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法

Also Published As

Publication number Publication date
HK1169861A1 (en) 2013-02-08
US10274831B2 (en) 2019-04-30
CN104133347B (zh) 2016-05-18
JP6071118B2 (ja) 2017-02-01
JPWO2009084244A1 (ja) 2011-05-12
KR20130105925A (ko) 2013-09-26
JP2012216870A (ja) 2012-11-08
TWI547769B (zh) 2016-09-01
HK1169716A1 (en) 2013-02-01
US20140362356A1 (en) 2014-12-11
JP2014232882A (ja) 2014-12-11
CN101681809B (zh) 2012-04-25
JP2012209581A (ja) 2012-10-25
CN104133347A (zh) 2014-11-05
JP5376268B2 (ja) 2013-12-25
US20090268178A1 (en) 2009-10-29
TWI602033B (zh) 2017-10-11
HK1199108A1 (zh) 2015-06-19
KR101525342B1 (ko) 2015-06-10
CN102540767A (zh) 2012-07-04
JP2012235148A (ja) 2012-11-29
US20180004097A1 (en) 2018-01-04
JP6422002B2 (ja) 2018-11-14
JP5088588B2 (ja) 2012-12-05
JP2017201426A (ja) 2017-11-09
JP6332840B2 (ja) 2018-05-30
TWI643035B (zh) 2018-12-01
JP2016075927A (ja) 2016-05-12
TWI454851B (zh) 2014-10-01
KR20100106201A (ko) 2010-10-01
TW201443579A (zh) 2014-11-16
CN101681809A (zh) 2010-03-24
US20170255108A1 (en) 2017-09-07
HK1137093A1 (en) 2010-07-16
JP5376267B2 (ja) 2013-12-25
TW201907243A (zh) 2019-02-16
KR101497862B1 (ko) 2015-03-04
JP2019012292A (ja) 2019-01-24
JP6429047B2 (ja) 2018-11-28
JP2017215599A (ja) 2017-12-07
TW201635046A (zh) 2016-10-01
TW201802616A (zh) 2018-01-16
US10310384B2 (en) 2019-06-04
JP2014003310A (ja) 2014-01-09
JP5854340B2 (ja) 2016-02-09
TW201802617A (zh) 2018-01-16
TWI563344B (enExample) 2016-12-21
CN102566320B (zh) 2015-01-28
US20180004098A1 (en) 2018-01-04
CN102566320A (zh) 2012-07-11
US9690205B2 (en) 2017-06-27
JP6071086B2 (ja) 2017-02-01
WO2009084244A1 (ja) 2009-07-09
JP2017083863A (ja) 2017-05-18
KR20130105924A (ko) 2013-09-26
TWI640840B (zh) 2018-11-11
TW200942980A (en) 2009-10-16
CN102540767B (zh) 2015-05-20
JP2016033686A (ja) 2016-03-10
US9229333B2 (en) 2016-01-05
TW201443578A (zh) 2014-11-16
JP5376266B2 (ja) 2013-12-25
JP5679130B2 (ja) 2015-03-04

Similar Documents

Publication Publication Date Title
KR101477833B1 (ko) 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법
KR101477465B1 (ko) 이동체 구동 시스템 및 이동체 구동 방법, 패턴 형성 장치 및 방법, 노광 장치 및 방법, 디바이스 제조 방법, 그리고 결정 방법
HK1199108B (en) Exposure apparatus, exposure method
HK1137093B (en) Exposure apparatus, exposure method and device manufacturing method
HK1169716B (en) Exposure apparatus, moving body driving system, pattern forming apparatus, and exposure method
HK1169861B (en) Exposure apparatus, exposure method and device manufacturing method

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A107 Divisional application of patent
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20171120

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20181219

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20191217

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20201224

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20201224

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000