CN102566320B - 曝光装置、曝光方法以及器件制造方法 - Google Patents
曝光装置、曝光方法以及器件制造方法 Download PDFInfo
- Publication number
- CN102566320B CN102566320B CN201210037442.4A CN201210037442A CN102566320B CN 102566320 B CN102566320 B CN 102566320B CN 201210037442 A CN201210037442 A CN 201210037442A CN 102566320 B CN102566320 B CN 102566320B
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- Prior art keywords
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- moving body
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Multimedia (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Optical Transform (AREA)
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007340641 | 2007-12-28 | ||
| JP2007-340641 | 2007-12-28 | ||
| JP2007-340460 | 2007-12-28 | ||
| JP2007340460 | 2007-12-28 | ||
| JP2008-110766 | 2008-04-21 | ||
| JP2008110766 | 2008-04-21 | ||
| JP2008-303735 | 2008-11-28 | ||
| JP2008303735 | 2008-11-28 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800195892A Division CN101681809B (zh) | 2007-12-28 | 2008-12-29 | 曝光装置、曝光方法以及器件制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102566320A CN102566320A (zh) | 2012-07-11 |
| CN102566320B true CN102566320B (zh) | 2015-01-28 |
Family
ID=40823980
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210037442.4A Expired - Fee Related CN102566320B (zh) | 2007-12-28 | 2008-12-29 | 曝光装置、曝光方法以及器件制造方法 |
| CN2008800195892A Expired - Fee Related CN101681809B (zh) | 2007-12-28 | 2008-12-29 | 曝光装置、曝光方法以及器件制造方法 |
| CN201210035719.XA Expired - Fee Related CN102540767B (zh) | 2007-12-28 | 2008-12-29 | 曝光装置、移动体驱动系统、图案形成装置、以及曝光方法 |
| CN201410382226.2A Expired - Fee Related CN104133347B (zh) | 2007-12-28 | 2008-12-29 | 曝光装置、曝光方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800195892A Expired - Fee Related CN101681809B (zh) | 2007-12-28 | 2008-12-29 | 曝光装置、曝光方法以及器件制造方法 |
| CN201210035719.XA Expired - Fee Related CN102540767B (zh) | 2007-12-28 | 2008-12-29 | 曝光装置、移动体驱动系统、图案形成装置、以及曝光方法 |
| CN201410382226.2A Expired - Fee Related CN104133347B (zh) | 2007-12-28 | 2008-12-29 | 曝光装置、曝光方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US9229333B2 (enExample) |
| JP (12) | JP5088588B2 (enExample) |
| KR (3) | KR101477833B1 (enExample) |
| CN (4) | CN102566320B (enExample) |
| TW (7) | TWI640840B (enExample) |
| WO (1) | WO2009084244A1 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101648289B1 (ko) | 2006-08-31 | 2016-08-12 | 가부시키가이샤 니콘 | 이동체 구동 시스템 및 이동체 구동 방법, 패턴 형성 장치 및 방법, 노광 장치 및 방법, 디바이스 제조 방법, 그리고 결정 방법 |
| TWI597585B (zh) * | 2006-08-31 | 2017-09-01 | 尼康股份有限公司 | Exposure method and exposure apparatus, and device manufacturing method |
| US20080094592A1 (en) | 2006-08-31 | 2008-04-24 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
| EP2071614B1 (en) | 2006-09-01 | 2018-06-20 | Nikon Corporation | Exposure method and apparatus |
| SG174102A1 (en) | 2006-09-01 | 2011-09-29 | Nikon Corp | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method |
| CN102566320B (zh) | 2007-12-28 | 2015-01-28 | 株式会社尼康 | 曝光装置、曝光方法以及器件制造方法 |
| US8493547B2 (en) * | 2009-08-25 | 2013-07-23 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US8514395B2 (en) * | 2009-08-25 | 2013-08-20 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
| JP2011168028A (ja) * | 2010-02-22 | 2011-09-01 | Ricoh Co Ltd | 画像形成装置 |
| CN102608861A (zh) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | 一种改善硅片周边光刻胶形貌的方法 |
| CN102540896B (zh) * | 2012-02-29 | 2013-07-17 | 清华大学 | 化学机械抛光传输机器人的非线性模糊结合递归控制系统 |
| CN102591205B (zh) * | 2012-02-29 | 2013-07-31 | 清华大学 | 化学机械抛光传输机器人的递归优化控制系统 |
| WO2014029601A1 (en) | 2012-08-23 | 2014-02-27 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and displacement measurement system |
| US9958424B2 (en) * | 2012-10-01 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of identifying airborne molecular contamination source |
| WO2014054689A1 (ja) | 2012-10-02 | 2014-04-10 | 株式会社ニコン | 移動体装置、露光装置、及びデバイス製造方法 |
| US9772564B2 (en) * | 2012-11-12 | 2017-09-26 | Nikon Corporation | Exposure apparatus and exposure method, and device manufacturing method |
| KR102080875B1 (ko) * | 2013-01-23 | 2020-04-16 | 삼성디스플레이 주식회사 | 스테이지 이송 장치 및 이를 이용한 스테이지 위치 측정 방법 |
| CN104111596A (zh) * | 2013-04-16 | 2014-10-22 | 上海微电子装备有限公司 | 用于光刻设备的全局调平的装置和方法 |
| JP6193611B2 (ja) | 2013-04-30 | 2017-09-06 | キヤノン株式会社 | 描画装置、及び物品の製造方法 |
| JP2014216631A (ja) * | 2013-04-30 | 2014-11-17 | キヤノン株式会社 | 描画装置、及び物品の製造方法 |
| KR102688211B1 (ko) | 2015-02-23 | 2024-07-24 | 가부시키가이샤 니콘 | 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법 |
| CN111158220A (zh) | 2015-02-23 | 2020-05-15 | 株式会社尼康 | 测量装置及方法、光刻系统、曝光装置及方法 |
| TWI702474B (zh) | 2015-02-23 | 2020-08-21 | 日商尼康股份有限公司 | 基板處理系統及基板處理方法、以及元件製造方法 |
| CN105045042B (zh) * | 2015-04-23 | 2017-06-16 | 清华大学 | 一种硅片台曝光区域六自由度位移测量方法 |
| HK1248833A1 (zh) * | 2015-09-30 | 2018-10-19 | 株式会社尼康 | 曝光装置及曝光方法、以及平面显示器制造方法 |
| HK1249192A1 (zh) | 2015-09-30 | 2018-10-26 | 株式会社尼康 | 曝光装置、平面显示器之制造方法、以及元件制造方法 |
| CN205427436U (zh) * | 2016-03-23 | 2016-08-03 | 北京京东方光电科技有限公司 | 显示器件的对位检测设备及曝光工艺系统 |
| US11099490B2 (en) * | 2016-07-07 | 2021-08-24 | Asml Netherlands B.V. | Inspection substrate and an inspection method |
| TWI604290B (zh) * | 2016-10-31 | 2017-11-01 | 智泰科技股份有限公司 | 具有空間位置誤差補償的數值控制工具機 |
| JP6909021B2 (ja) * | 2017-03-07 | 2021-07-28 | キヤノン株式会社 | リソグラフィ装置及び物品の製造方法 |
| JP6945316B2 (ja) * | 2017-03-24 | 2021-10-06 | キヤノン株式会社 | 検出装置、パターン形成装置、取得方法、検出方法、および物品製造方法 |
| CN106950801A (zh) * | 2017-04-16 | 2017-07-14 | 合肥芯碁微电子装备有限公司 | 一种无掩膜激光直写光刻设备的快速边缘曝光方法 |
| US10522557B2 (en) | 2017-10-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Surface topography by forming spacer-like components |
| CN109957504B (zh) * | 2017-12-14 | 2022-08-02 | 长春长光华大智造测序设备有限公司 | 便于初始对准的高通量基因测序仪硅片及初始对准方法 |
| KR20190092906A (ko) | 2018-01-31 | 2019-08-08 | 김믿음 | 칼날 배수구망 |
| US10591815B2 (en) * | 2018-06-28 | 2020-03-17 | Applied Materials, Inc. | Shifting of patterns to reduce line waviness |
| KR102592792B1 (ko) * | 2018-08-23 | 2023-10-24 | 에이에스엠엘 네델란즈 비.브이. | 대상물 로딩 프로세스를 캘리브레이션하는 스테이지 장치 및 방법 |
| JP7278138B2 (ja) * | 2019-04-18 | 2023-05-19 | キヤノン株式会社 | 基板処理装置、物品製造方法、基板処理方法、基板処理システム、管理装置、およびプログラム |
| US11764111B2 (en) * | 2019-10-24 | 2023-09-19 | Texas Instruments Incorporated | Reducing cross-wafer variability for minimum width resistors |
| JP7495814B2 (ja) * | 2020-05-13 | 2024-06-05 | キヤノン株式会社 | インプリント装置、および物品の製造方法 |
| JP2023000112A (ja) * | 2021-06-17 | 2023-01-04 | キオクシア株式会社 | 計測装置および計測プログラム |
| CN113506746B (zh) * | 2021-06-28 | 2024-03-19 | 华虹半导体(无锡)有限公司 | 解决超级结工艺打标区域高台阶差的方法 |
| JP7753075B2 (ja) * | 2021-12-06 | 2025-10-14 | キヤノン株式会社 | 光源装置、リソグラフィ装置、及び物品の製造方法 |
| CN114256207A (zh) * | 2021-12-13 | 2022-03-29 | 浙江大学杭州国际科创中心 | 晶圆表面标记制作方法及扫描电镜内晶圆的定位方法 |
| WO2024003608A1 (en) * | 2022-06-26 | 2024-01-04 | Nova Ltd | Moving apparatus along multiple axes |
Family Cites Families (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4780617A (en) | 1984-08-09 | 1988-10-25 | Nippon Kogaku K.K. | Method for successive alignment of chip patterns on a substrate |
| JPS6144429A (ja) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | 位置合わせ方法、及び位置合せ装置 |
| JPH0545886A (ja) | 1991-08-12 | 1993-02-26 | Nikon Corp | 角形基板の露光装置 |
| KR100300618B1 (ko) | 1992-12-25 | 2001-11-22 | 오노 시게오 | 노광방법,노광장치,및그장치를사용하는디바이스제조방법 |
| JPH07270122A (ja) * | 1994-03-30 | 1995-10-20 | Canon Inc | 変位検出装置、該変位検出装置を備えた露光装置およびデバイスの製造方法 |
| JPH07335529A (ja) * | 1994-06-09 | 1995-12-22 | Nikon Corp | 投影露光装置 |
| US5715064A (en) | 1994-06-17 | 1998-02-03 | International Business Machines Corporation | Step and repeat apparatus having enhanced accuracy and increased throughput |
| US5677758A (en) | 1995-02-09 | 1997-10-14 | Mrs Technology, Inc. | Lithography System using dual substrate stages |
| JP3237522B2 (ja) | 1996-02-05 | 2001-12-10 | ウシオ電機株式会社 | ウエハ周辺露光方法および装置 |
| JP4029180B2 (ja) * | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| KR20030096435A (ko) | 1996-11-28 | 2003-12-31 | 가부시키가이샤 니콘 | 노광장치 및 노광방법 |
| DE69717975T2 (de) | 1996-12-24 | 2003-05-28 | Asml Netherlands B.V., Veldhoven | In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät |
| EP0900412B1 (en) | 1997-03-10 | 2005-04-06 | ASML Netherlands B.V. | Lithographic apparatus comprising a positioning device having two object holders |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| EP1063742A4 (en) | 1998-03-11 | 2005-04-20 | Nikon Corp | ULTRAVIOLET LASER DEVICE AND EXPOSURE APPARATUS COMPRISING SUCH A ULTRAVIOLET LASER DEVICE |
| JP2000068192A (ja) | 1998-08-18 | 2000-03-03 | Nikon Corp | 露光装置、露光方法及び位置検出方法 |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| TWI223734B (en) | 1999-12-21 | 2004-11-11 | Asml Netherlands Bv | Crash prevention in positioning apparatus for use in lithographic projection apparatus |
| KR20010085493A (ko) | 2000-02-25 | 2001-09-07 | 시마무라 기로 | 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법 |
| US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
| US7561270B2 (en) * | 2000-08-24 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| WO2002019401A1 (en) * | 2000-08-29 | 2002-03-07 | Nikon Corporation | Exposure method and device |
| US6611316B2 (en) | 2001-02-27 | 2003-08-26 | Asml Holding N.V. | Method and system for dual reticle image exposure |
| JP2002280283A (ja) * | 2001-03-16 | 2002-09-27 | Canon Inc | 基板処理装置 |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| JP2003037153A (ja) * | 2001-07-25 | 2003-02-07 | Nikon Corp | 保持装置、ステージ装置、および露光装置ならびに半導体デバイス |
| KR20050025626A (ko) * | 2002-07-31 | 2005-03-14 | 가부시키가이샤 니콘 | 위치계측방법, 위치제어방법, 노광방법 및 노광장치,그리고 디바이스 제조방법 |
| TWI242691B (en) | 2002-08-23 | 2005-11-01 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
| KR100585476B1 (ko) | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
| EP1420298B1 (en) | 2002-11-12 | 2013-02-20 | ASML Netherlands B.V. | Lithographic apparatus |
| WO2004053951A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光方法及び露光装置並びにデバイス製造方法 |
| KR100967835B1 (ko) | 2002-12-13 | 2010-07-05 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 층상 스폿 조사 방법 및 장치에서의 액체 제거 |
| WO2004057590A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
| KR101442361B1 (ko) | 2003-02-26 | 2014-09-23 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| EP2722702A3 (en) | 2003-05-06 | 2014-07-23 | Nikon Corporation | Projection optical system, and exposure apparatus and exposure method |
| KR101134957B1 (ko) | 2003-06-19 | 2012-04-10 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
| JP4492239B2 (ja) * | 2003-07-28 | 2010-06-30 | 株式会社ニコン | 露光装置及びデバイス製造方法、並びに露光装置の制御方法 |
| JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
| WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
| US7589822B2 (en) * | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| US7102729B2 (en) * | 2004-02-03 | 2006-09-05 | Asml Netherlands B.V. | Lithographic apparatus, measurement system, and device manufacturing method |
| JP2005317916A (ja) | 2004-03-30 | 2005-11-10 | Canon Inc | 露光装置及びデバイス製造方法 |
| US7566893B2 (en) | 2004-06-22 | 2009-07-28 | Nikon Corporation | Best focus detection method, exposure method, and exposure apparatus |
| KR100550352B1 (ko) * | 2004-07-02 | 2006-02-08 | 삼성전자주식회사 | 반도체 기판의 노광방법 및 이를 이용하는 노광 장치 |
| JP4747545B2 (ja) * | 2004-09-30 | 2011-08-17 | 株式会社ニコン | ステージ装置及び露光装置並びにデバイス製造方法 |
| TWI538013B (zh) * | 2004-11-18 | 2016-06-11 | 尼康股份有限公司 | A position measuring method, a position control method, a measuring method, a loading method, an exposure method and an exposure apparatus, and a device manufacturing method |
| KR100585170B1 (ko) * | 2004-12-27 | 2006-06-02 | 삼성전자주식회사 | 트윈 기판 스테이지를 구비한 스캐너 장치, 이를 포함하는반도체 사진 설비 및 상기 설비를 이용한 반도체 소자의제조방법 |
| US20060139595A1 (en) | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness |
| JP2006278820A (ja) * | 2005-03-30 | 2006-10-12 | Nikon Corp | 露光方法及び装置 |
| JP4677267B2 (ja) * | 2005-04-04 | 2011-04-27 | キヤノン株式会社 | 平面ステージ装置及び露光装置 |
| US7161659B2 (en) * | 2005-04-08 | 2007-01-09 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US7515281B2 (en) | 2005-04-08 | 2009-04-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN100555568C (zh) | 2005-04-28 | 2009-10-28 | 株式会社尼康 | 曝光方法及曝光装置、以及元件制造方法 |
| JP4410216B2 (ja) | 2005-05-24 | 2010-02-03 | エーエスエムエル ネザーランズ ビー．ブイ． | ２ステージ・リソグラフィ装置及びデバイス製造方法 |
| KR20080066836A (ko) * | 2005-11-09 | 2008-07-16 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| TWI457977B (zh) * | 2005-12-28 | 2014-10-21 | 尼康股份有限公司 | A pattern forming method and a pattern forming apparatus, and an element manufacturing method |
| KR101442381B1 (ko) | 2006-01-19 | 2014-09-22 | 가부시키가이샤 니콘 | 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 패턴 형성 장치, 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 |
| EP3115844B1 (en) * | 2006-02-21 | 2018-08-15 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
| US8908145B2 (en) | 2006-02-21 | 2014-12-09 | Nikon Corporation | Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method |
| KR101400571B1 (ko) | 2006-02-21 | 2014-05-28 | 가부시키가이샤 니콘 | 측정 장치 및 방법, 처리 장치 및 방법, 패턴 형성 장치 및방법, 노광 장치 및 방법, 그리고 디바이스 제조 방법 |
| US7310132B2 (en) | 2006-03-17 | 2007-12-18 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI454859B (zh) * | 2006-03-30 | 2014-10-01 | 尼康股份有限公司 | 移動體裝置、曝光裝置與曝光方法以及元件製造方法 |
| CN100504614C (zh) * | 2006-04-14 | 2009-06-24 | 上海微电子装备有限公司 | 步进扫描光刻机双台交换定位系统 |
| US7483120B2 (en) | 2006-05-09 | 2009-01-27 | Asml Netherlands B.V. | Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method |
| TWI425318B (zh) * | 2006-06-09 | 2014-02-01 | 尼康股份有限公司 | 移動體裝置、曝光裝置和曝光方法以及元件製造方法 |
| US20080094592A1 (en) | 2006-08-31 | 2008-04-24 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
| TWI597585B (zh) | 2006-08-31 | 2017-09-01 | 尼康股份有限公司 | Exposure method and exposure apparatus, and device manufacturing method |
| KR101648289B1 (ko) | 2006-08-31 | 2016-08-12 | 가부시키가이샤 니콘 | 이동체 구동 시스템 및 이동체 구동 방법, 패턴 형성 장치 및 방법, 노광 장치 및 방법, 디바이스 제조 방법, 그리고 결정 방법 |
| EP2071614B1 (en) | 2006-09-01 | 2018-06-20 | Nikon Corporation | Exposure method and apparatus |
| SG174102A1 (en) | 2006-09-01 | 2011-09-29 | Nikon Corp | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method |
| CN100468212C (zh) * | 2006-09-22 | 2009-03-11 | 上海微电子装备有限公司 | 双台定位交换系统 |
| JP2007274881A (ja) * | 2006-12-01 | 2007-10-18 | Nikon Corp | 移動体装置、微動体及び露光装置 |
| US7903866B2 (en) * | 2007-03-29 | 2011-03-08 | Asml Netherlands B.V. | Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object |
| CN102566320B (zh) | 2007-12-28 | 2015-01-28 | 株式会社尼康 | 曝光装置、曝光方法以及器件制造方法 |
-
2008
- 2008-12-29 CN CN201210037442.4A patent/CN102566320B/zh not_active Expired - Fee Related
- 2008-12-29 US US12/344,659 patent/US9229333B2/en not_active Expired - Fee Related
- 2008-12-29 JP JP2009547917A patent/JP5088588B2/ja not_active Expired - Fee Related
- 2008-12-29 TW TW106130073A patent/TWI640840B/zh not_active IP Right Cessation
- 2008-12-29 CN CN2008800195892A patent/CN101681809B/zh not_active Expired - Fee Related
- 2008-12-29 KR KR1020097027565A patent/KR101477833B1/ko not_active Expired - Fee Related
- 2008-12-29 KR KR1020137022078A patent/KR101497862B1/ko not_active Expired - Fee Related
- 2008-12-29 CN CN201210035719.XA patent/CN102540767B/zh not_active Expired - Fee Related
- 2008-12-29 TW TW107136030A patent/TW201907243A/zh unknown
- 2008-12-29 TW TW097151188A patent/TWI454851B/zh not_active IP Right Cessation
- 2008-12-29 TW TW106130071A patent/TWI643035B/zh not_active IP Right Cessation
- 2008-12-29 KR KR1020137022077A patent/KR101525342B1/ko not_active Expired - Fee Related
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