KR101420600B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101420600B1
KR101420600B1 KR1020070124719A KR20070124719A KR101420600B1 KR 101420600 B1 KR101420600 B1 KR 101420600B1 KR 1020070124719 A KR1020070124719 A KR 1020070124719A KR 20070124719 A KR20070124719 A KR 20070124719A KR 101420600 B1 KR101420600 B1 KR 101420600B1
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South Korea
Prior art keywords
layer
insulating layer
semiconductor layer
semiconductor
thickness
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Expired - Fee Related
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KR1020070124719A
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English (en)
Korean (ko)
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KR20080052409A (ko
Inventor
？페이 야마자키
야수유키 아라이
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20080052409A publication Critical patent/KR20080052409A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
KR1020070124719A 2006-12-05 2007-12-04 반도체 장치 Expired - Fee Related KR101420600B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006327718 2006-12-05
JPJP-P-2006-00327718 2006-12-05

Publications (2)

Publication Number Publication Date
KR20080052409A KR20080052409A (ko) 2008-06-11
KR101420600B1 true KR101420600B1 (ko) 2014-07-17

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Family Applications (1)

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KR1020070124719A Expired - Fee Related KR101420600B1 (ko) 2006-12-05 2007-12-04 반도체 장치

Country Status (3)

Country Link
US (1) US8853782B2 (enExample)
JP (1) JP5500771B2 (enExample)
KR (1) KR101420600B1 (enExample)

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KR20180059577A (ko) * 2009-11-27 2018-06-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8797303B2 (en) * 2011-03-21 2014-08-05 Qualcomm Mems Technologies, Inc. Amorphous oxide semiconductor thin film transistor fabrication method
US9379254B2 (en) 2011-11-18 2016-06-28 Qualcomm Mems Technologies, Inc. Amorphous oxide semiconductor thin film transistor fabrication method
CN104167449B (zh) * 2014-08-05 2017-09-22 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
CN104538429B (zh) * 2014-12-26 2019-07-02 深圳市华星光电技术有限公司 Amoled背板的制作方法及其结构
JP6814965B2 (ja) * 2017-03-06 2021-01-20 パナソニックＩｐマネジメント株式会社 半導体エピタキシャルウェハ、半導体素子、および半導体素子の製造方法

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JPH09116167A (ja) * 1994-12-27 1997-05-02 Seiko Epson Corp 薄膜半導体装置、液晶表示装置及びその製造方法、並びに電子機器
KR19990006832A (ko) * 1997-06-10 1999-01-25 야마자끼 순페이 반도체 박막 및 반도체 장치
JP2000277737A (ja) * 1999-03-24 2000-10-06 Fujitsu Ltd 半導体装置及びその製造方法
JP2000294799A (ja) * 2000-01-01 2000-10-20 Semiconductor Energy Lab Co Ltd 半導体装置

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JP4014676B2 (ja) 1996-08-13 2007-11-28 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP4086925B2 (ja) 1996-12-27 2008-05-14 株式会社半導体エネルギー研究所 アクティブマトリクスディスプレイ
TW386238B (en) 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4401448B2 (ja) 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4068219B2 (ja) 1997-10-21 2008-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11204434A (ja) 1998-01-12 1999-07-30 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3980156B2 (ja) 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
US6388270B1 (en) 1998-03-27 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for producing same
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JP4016504B2 (ja) 1998-10-05 2007-12-05 セイコーエプソン株式会社 半導体膜の製造方法及びアニール装置
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US7002659B1 (en) 1999-11-30 2006-02-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal panel and liquid crystal projector
JP3531671B2 (ja) 2001-02-02 2004-05-31 シャープ株式会社 Ｓｏｉｍｏｓｆｅｔ及びその製造方法
JP4134545B2 (ja) 2001-10-02 2008-08-20 日本電気株式会社 半導体装置
JP2003203925A (ja) 2001-10-26 2003-07-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4149168B2 (ja) 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
CN1432984A (zh) 2002-01-18 2003-07-30 株式会社半导体能源研究所 发光器件
JP4193097B2 (ja) * 2002-02-18 2008-12-10 日本電気株式会社 半導体装置およびその製造方法
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JP4356309B2 (ja) * 2002-12-03 2009-11-04 セイコーエプソン株式会社 トランジスタ、集積回路、電気光学装置、電子機器
JP2004327977A (ja) * 2003-04-11 2004-11-18 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法
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JP4469744B2 (ja) * 2005-03-18 2010-05-26 株式会社東芝 半導体記憶装置および半導体記憶装置の駆動方法
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09116167A (ja) * 1994-12-27 1997-05-02 Seiko Epson Corp 薄膜半導体装置、液晶表示装置及びその製造方法、並びに電子機器
KR19990006832A (ko) * 1997-06-10 1999-01-25 야마자끼 순페이 반도체 박막 및 반도체 장치
JP2000277737A (ja) * 1999-03-24 2000-10-06 Fujitsu Ltd 半導体装置及びその製造方法
JP2000294799A (ja) * 2000-01-01 2000-10-20 Semiconductor Energy Lab Co Ltd 半導体装置

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JP5500771B2 (ja) 2014-05-21
KR20080052409A (ko) 2008-06-11
US20080128702A1 (en) 2008-06-05
JP2008166724A (ja) 2008-07-17
US8853782B2 (en) 2014-10-07

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