JP2008166724A - 半導体装置 - Google Patents
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- JP2008166724A JP2008166724A JP2007289247A JP2007289247A JP2008166724A JP 2008166724 A JP2008166724 A JP 2008166724A JP 2007289247 A JP2007289247 A JP 2007289247A JP 2007289247 A JP2007289247 A JP 2007289247A JP 2008166724 A JP2008166724 A JP 2008166724A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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Abstract
【解決手段】絶縁表面上の半導体層で素子を構成する所謂SOI構造の半導体装置であって、該半導体層を厚さが5nm乃至30nmときわめて薄い半導体層で構成する。このような半導体層に対し、厚さ2nm乃至20nmのゲート絶縁層と、ゲート電極を有し、チャネル長が該半導体層の厚さの10倍以上40倍未満である電界効果型トランジスタを備えた半導体装置である。半導体層を薄膜化することにより、チャネル形成領域に添加される一導電型不純物濃度の影響を受けにくくなるように作用する。
【選択図】図1
Description
11 窒化シリコン層
12 下地絶縁層
13 酸化シリコン層
14 半導体層
15 窒化シリコン層
16 ゲート絶縁層
17 第2不純物領域
18 第1不純物領域
19 素子分離絶縁層
20 絶縁層
22 側壁絶縁層
24 第1ゲート電極層
25 ゲート電極
26 第2ゲート電極層
27 絶縁層
28 サイドウオール絶縁層
30 パッシベーション層
32 層間絶縁層
33 コンタクトホール
34 バリアメタル
36 コンタクトプラグ
38 配線
40 パッシベーション層
41 絶縁層
50 マイクロプロセッサ
51 演算回路
52 演算回路制御部
53 命令解析部
54 割り込み制御部
55 タイミング制御部
56 レジスタ
57 レジスタ制御部
58 バスインターフェース
59 読み出し専用メモリ
60 メモリインターフェース
80 アンテナ
82 誘電体板
84 ガス供給部
86 排気口
88 支持台
90 温度制御部
92 マイクロ波供給部
94 プラズマ
101 基板
102 ソース領域
103 ドレイン領域
104 チャネル形成領域
105 ゲート絶縁層
106 ソース電極
107 ドレイン電極
108 ゲート電極
110 半導体装置
112 アンテナ
114 変調回路
116 復調回路
118 整流回路
120 定電圧回路
122 容量部
124 発振回路
126 リセット回路
128 共振回路
130 アナログ回路部
132 デジタル回路部
134 RFインターフェース
136 制御レジスタ
138 クロックコントローラ
140 インターフェース
142 中央処理ユニット
144 ランダムアクセスメモリ
146 読み出し専用メモリ
150 電源管理回路
Claims (12)
- 絶縁表面に設けられた厚さ10nm乃至25nmの半導体層と、
前記半導体層上に設けられた厚さ2nm乃至20nmのゲート絶縁層と、
前記ゲート絶縁層上に設けられ、チャネル長が前記半導体層の厚さの10倍以上40倍未満であるゲート電極を有し、
しきい値電圧が0.01V以上0.62V未満であって、サブスレッショルド値が60mV/decade以上100mV/decade未満である電界効果型トランジスタを備えたことを特徴とする半導体装置。 - 絶縁表面に設けられた厚さ10nm乃至25nmの半導体層と、
前記半導体層上に設けられた厚さ2nm乃至20nmのゲート絶縁層と、
前記ゲート絶縁層上に設けられ、チャネル長が100nm以上1000nm未満であるゲート電極を有し、
しきい値電圧が0.01V以上0.62V未満であって、サブスレッショルド値が60mV/decade以上100mV/decade未満である電界効果型トランジスタを備えたことを特徴とする半導体装置。 - 絶縁表面に設けられた厚さ10nm乃至25nmの半導体層と、
前記半導体層の周囲に設けられた素子分離絶縁層と、
前記半導体層上に設けられた厚さ2nm乃至20nmのゲート絶縁層と、
前記ゲート絶縁層上に設けられ、チャネル長が前記半導体層の厚さの10倍以上40倍未満であるゲート電極と、
前記半導体層の周辺端部に設けられ、前記素子分離絶縁層と接している窒化シリコン層を有することを特徴とする半導体装置。 - 絶縁表面に設けられた厚さ10nm乃至25nmの半導体層と、
前記半導体層の周囲に設けられた素子分離絶縁層と、
前記半導体層上に設けられた厚さ2nm乃至20nmのゲート絶縁層と、
前記ゲート絶縁層上に設けられ、チャネル長が100nm以上1000nm未満であるゲート電極と、
前記半導体層の周辺端部に設けられ、前記素子分離絶縁層と接している窒化シリコン層を有することを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一項において、
前記半導体層のチャネル形成領域に含まれる一導電型を付与する不純物元素の濃度が5×1017cm−3以上1×1018cm−3以下であることを特徴とする半導体装置。 - 請求項5において、
前記一導電型不純物はp型不純物であることを特徴とする半導体装置。 - 請求項6において、
前記p型不純物は、硼素、アルミニウム、ガリウムから選ばれた一種又は複数種の元素であることを特徴とする半導体装置。 - 請求項1乃至請求項7のいずれか一項において、
前記ゲート絶縁層が、酸化シリコン層、若しくは酸化シリコン層と窒化シリコン層との積層構造を有することを特徴とする半導体装置。 - 請求項1乃至請求項7のいずれか一項において、
前記ゲート電極が、金属窒化物で形成される第1層と、金属で形成される第2層を有することを特徴とする半導体装置。 - 請求項1乃至請求項7のいずれか一項において、
前記ゲート絶縁層が、酸化シリコン層と窒化シリコン層との積層構造を有し、
前記ゲート電極が、金属窒化物で形成される第1層と、金属で形成される第2層を有し、
前記ゲート電極の前記金属窒化物で形成される第1層と前記ゲート絶縁層の前記酸化シリコン層との間に前記窒化シリコン層が設けられていることを特徴とする半導体装置。 - 請求項1乃至請求項10のいずれか一項において、
前記半導体層は、面方位が異なる複数の結晶領域を有していることを特徴とする半導体装置。 - 請求項1乃至請求項11のいずれか一項に記載の半導体装置を用いることを特徴とするマイクロプロセッサ。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014514747A (ja) * | 2011-03-21 | 2014-06-19 | クゥアルコム・メムス・テクノロジーズ・インコーポレイテッド | アモルファス酸化物半導体薄膜トランジスタ作製方法 |
US9379254B2 (en) | 2011-11-18 | 2016-06-28 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
JP2018148232A (ja) * | 2009-11-27 | 2018-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104167449B (zh) * | 2014-08-05 | 2017-09-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
CN104538429B (zh) * | 2014-12-26 | 2019-07-02 | 深圳市华星光电技术有限公司 | Amoled背板的制作方法及其结构 |
JP6814965B2 (ja) | 2017-03-06 | 2021-01-20 | パナソニックIpマネジメント株式会社 | 半導体エピタキシャルウェハ、半導体素子、および半導体素子の製造方法 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000101087A (ja) * | 1998-09-18 | 2000-04-07 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2000277737A (ja) * | 1999-03-24 | 2000-10-06 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2003110105A (ja) * | 2001-10-02 | 2003-04-11 | Nec Corp | 半導体装置、及び、それの製造方法 |
JP2003243415A (ja) * | 2002-02-18 | 2003-08-29 | Nec Corp | 半導体装置およびその製造方法 |
JP2004327977A (ja) * | 2003-04-11 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及びその作製方法 |
JP2005057042A (ja) * | 2003-08-04 | 2005-03-03 | Mitsubishi Electric Corp | 薄膜トランジスタおよびその製造方法ならびに液晶表示装置およびその製造方法 |
JP2005167207A (ja) * | 2003-11-28 | 2005-06-23 | Samsung Sdi Co Ltd | 薄膜トランジスタ |
WO2006038351A1 (ja) * | 2004-09-30 | 2006-04-13 | Sharp Kabushiki Kaisha | 結晶質半導体膜およびその製造方法 |
JP2006148049A (ja) * | 2004-10-20 | 2006-06-08 | Renesas Technology Corp | 半導体装置 |
JP2006179746A (ja) * | 2004-12-24 | 2006-07-06 | Toshiba Corp | 半導体記憶装置 |
JP2006260722A (ja) * | 2005-03-18 | 2006-09-28 | Toshiba Corp | 半導体記憶装置および半導体記憶装置の駆動方法 |
JP2006270076A (ja) * | 2005-02-25 | 2006-10-05 | Semiconductor Energy Lab Co Ltd | 半導体装置、および半導体装置の作製方法 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09116167A (ja) | 1994-12-27 | 1997-05-02 | Seiko Epson Corp | 薄膜半導体装置、液晶表示装置及びその製造方法、並びに電子機器 |
JP3645379B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4014676B2 (ja) | 1996-08-13 | 2007-11-28 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
JP4086925B2 (ja) | 1996-12-27 | 2008-05-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクスディスプレイ |
TW386238B (en) | 1997-01-20 | 2000-04-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP4401448B2 (ja) | 1997-02-24 | 2010-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6452211B1 (en) | 1997-06-10 | 2002-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
JP4068219B2 (ja) | 1997-10-21 | 2008-03-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH11204434A (ja) | 1998-01-12 | 1999-07-30 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP3980156B2 (ja) | 1998-02-26 | 2007-09-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
US6388270B1 (en) | 1998-03-27 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for producing same |
US6288413B1 (en) | 1998-04-03 | 2001-09-11 | Kabushiki Kaisha Toshiba | Thin film transistor and method for producing same |
JPH11345978A (ja) | 1998-04-03 | 1999-12-14 | Toshiba Corp | 薄膜トランジスタおよびその製造方法、液晶表示装置 |
US6396147B1 (en) | 1998-05-16 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with metal-oxide conductors |
US7153729B1 (en) | 1998-07-15 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
US6559036B1 (en) | 1998-08-07 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP4016504B2 (ja) | 1998-10-05 | 2007-12-05 | セイコーエプソン株式会社 | 半導体膜の製造方法及びアニール装置 |
US6909114B1 (en) | 1998-11-17 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having LDD regions |
US6365917B1 (en) | 1998-11-25 | 2002-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6469317B1 (en) | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
JP2000260997A (ja) | 1999-03-10 | 2000-09-22 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
US7002659B1 (en) | 1999-11-30 | 2006-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal panel and liquid crystal projector |
JP2000294799A (ja) | 2000-01-01 | 2000-10-20 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP3531671B2 (ja) | 2001-02-02 | 2004-05-31 | シャープ株式会社 | Soimosfet及びその製造方法 |
JP2003203925A (ja) | 2001-10-26 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4149168B2 (ja) | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | 発光装置 |
US6909240B2 (en) | 2002-01-18 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP3986051B2 (ja) | 2002-04-30 | 2007-10-03 | 株式会社半導体エネルギー研究所 | 発光装置、電子機器 |
JP4356309B2 (ja) * | 2002-12-03 | 2009-11-04 | セイコーエプソン株式会社 | トランジスタ、集積回路、電気光学装置、電子機器 |
US7374981B2 (en) | 2003-04-11 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, electronic device having the same, and method for manufacturing the same |
JP4628032B2 (ja) | 2004-07-28 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
US7265425B2 (en) * | 2004-11-15 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device employing an extension spacer and a method of forming the same |
US20060205129A1 (en) | 2005-02-25 | 2006-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7696024B2 (en) | 2006-03-31 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
EP2259294B1 (en) | 2006-04-28 | 2017-10-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
US7968884B2 (en) * | 2006-12-05 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI418036B (zh) | 2006-12-05 | 2013-12-01 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
-
2007
- 2007-11-07 JP JP2007289247A patent/JP5500771B2/ja active Active
- 2007-11-28 US US11/946,513 patent/US8853782B2/en not_active Expired - Fee Related
- 2007-12-04 KR KR1020070124719A patent/KR101420600B1/ko active IP Right Grant
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000101087A (ja) * | 1998-09-18 | 2000-04-07 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2000277737A (ja) * | 1999-03-24 | 2000-10-06 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2003110105A (ja) * | 2001-10-02 | 2003-04-11 | Nec Corp | 半導体装置、及び、それの製造方法 |
JP2003243415A (ja) * | 2002-02-18 | 2003-08-29 | Nec Corp | 半導体装置およびその製造方法 |
JP2004327977A (ja) * | 2003-04-11 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及びその作製方法 |
JP2005057042A (ja) * | 2003-08-04 | 2005-03-03 | Mitsubishi Electric Corp | 薄膜トランジスタおよびその製造方法ならびに液晶表示装置およびその製造方法 |
JP2005167207A (ja) * | 2003-11-28 | 2005-06-23 | Samsung Sdi Co Ltd | 薄膜トランジスタ |
WO2006038351A1 (ja) * | 2004-09-30 | 2006-04-13 | Sharp Kabushiki Kaisha | 結晶質半導体膜およびその製造方法 |
JP2006148049A (ja) * | 2004-10-20 | 2006-06-08 | Renesas Technology Corp | 半導体装置 |
JP2006179746A (ja) * | 2004-12-24 | 2006-07-06 | Toshiba Corp | 半導体記憶装置 |
JP2006270076A (ja) * | 2005-02-25 | 2006-10-05 | Semiconductor Energy Lab Co Ltd | 半導体装置、および半導体装置の作製方法 |
JP2006260722A (ja) * | 2005-03-18 | 2006-09-28 | Toshiba Corp | 半導体記憶装置および半導体記憶装置の駆動方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018148232A (ja) * | 2009-11-27 | 2018-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2014514747A (ja) * | 2011-03-21 | 2014-06-19 | クゥアルコム・メムス・テクノロジーズ・インコーポレイテッド | アモルファス酸化物半導体薄膜トランジスタ作製方法 |
US9379254B2 (en) | 2011-11-18 | 2016-06-28 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
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