JP5500771B2 - 半導体装置及びマイクロプロセッサ - Google Patents

半導体装置及びマイクロプロセッサ Download PDF

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Publication number
JP5500771B2
JP5500771B2 JP2007289247A JP2007289247A JP5500771B2 JP 5500771 B2 JP5500771 B2 JP 5500771B2 JP 2007289247 A JP2007289247 A JP 2007289247A JP 2007289247 A JP2007289247 A JP 2007289247A JP 5500771 B2 JP5500771 B2 JP 5500771B2
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layer
insulating layer
semiconductor layer
region
semiconductor
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Japanese (ja)
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JP2008166724A (ja
JP2008166724A5 (enExample
Inventor
舜平 山崎
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007289247A priority Critical patent/JP5500771B2/ja
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Publication of JP2008166724A5 publication Critical patent/JP2008166724A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
JP2007289247A 2006-12-05 2007-11-07 半導体装置及びマイクロプロセッサ Active JP5500771B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007289247A JP5500771B2 (ja) 2006-12-05 2007-11-07 半導体装置及びマイクロプロセッサ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006327718 2006-12-05
JP2006327718 2006-12-05
JP2007289247A JP5500771B2 (ja) 2006-12-05 2007-11-07 半導体装置及びマイクロプロセッサ

Publications (3)

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JP2008166724A JP2008166724A (ja) 2008-07-17
JP2008166724A5 JP2008166724A5 (enExample) 2010-10-28
JP5500771B2 true JP5500771B2 (ja) 2014-05-21

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JP2007289247A Active JP5500771B2 (ja) 2006-12-05 2007-11-07 半導体装置及びマイクロプロセッサ

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US (1) US8853782B2 (enExample)
JP (1) JP5500771B2 (enExample)
KR (1) KR101420600B1 (enExample)

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KR20180059577A (ko) * 2009-11-27 2018-06-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8797303B2 (en) * 2011-03-21 2014-08-05 Qualcomm Mems Technologies, Inc. Amorphous oxide semiconductor thin film transistor fabrication method
US9379254B2 (en) 2011-11-18 2016-06-28 Qualcomm Mems Technologies, Inc. Amorphous oxide semiconductor thin film transistor fabrication method
CN104167449B (zh) * 2014-08-05 2017-09-22 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
CN104538429B (zh) * 2014-12-26 2019-07-02 深圳市华星光电技术有限公司 Amoled背板的制作方法及其结构
JP6814965B2 (ja) * 2017-03-06 2021-01-20 パナソニックＩｐマネジメント株式会社 半導体エピタキシャルウェハ、半導体素子、および半導体素子の製造方法

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Publication number Publication date
KR20080052409A (ko) 2008-06-11
US20080128702A1 (en) 2008-06-05
JP2008166724A (ja) 2008-07-17
KR101420600B1 (ko) 2014-07-17
US8853782B2 (en) 2014-10-07

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