KR101369863B1 - 반도체장치 및 전자기기 - Google Patents

반도체장치 및 전자기기 Download PDF

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Publication number
KR101369863B1
KR101369863B1 KR1020070136110A KR20070136110A KR101369863B1 KR 101369863 B1 KR101369863 B1 KR 101369863B1 KR 1020070136110 A KR1020070136110 A KR 1020070136110A KR 20070136110 A KR20070136110 A KR 20070136110A KR 101369863 B1 KR101369863 B1 KR 101369863B1
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South Korea
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terminal
photoelectric conversion
film
conductive film
insulating layer
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Expired - Fee Related
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KR1020070136110A
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English (en)
Korean (ko)
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KR20080061291A (ko
Inventor
아쓰시 히로세
히데아키 시시도
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020070136110A 2006-12-27 2007-12-24 반도체장치 및 전자기기 Expired - Fee Related KR101369863B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006351877 2006-12-27
JPJP-P-2006-00351877 2006-12-27

Publications (2)

Publication Number Publication Date
KR20080061291A KR20080061291A (ko) 2008-07-02
KR101369863B1 true KR101369863B1 (ko) 2014-03-05

Family

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Family Applications (1)

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KR1020070136110A Expired - Fee Related KR101369863B1 (ko) 2006-12-27 2007-12-24 반도체장치 및 전자기기

Country Status (4)

Country Link
US (1) US7923800B2 (enExample)
JP (1) JP5070030B2 (enExample)
KR (1) KR101369863B1 (enExample)
CN (1) CN101211931B (enExample)

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KR100796592B1 (ko) * 2005-08-26 2008-01-21 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
US8207589B2 (en) * 2007-02-15 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device
JP5212686B2 (ja) 2007-08-22 2013-06-19 ソニー株式会社 半導体レーザアレイの製造方法
US8115160B2 (en) * 2008-03-14 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Protection circuit and photoelectric conversion device
JP5388632B2 (ja) 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
TWI493685B (zh) 2012-02-10 2015-07-21 E Ink Holdings Inc 主動陣列基板上之靜電防護結構
EP2651035B1 (en) * 2012-04-11 2017-05-03 Imec Low voltage drop unidirectional smart bypass elements
JP2015149414A (ja) * 2014-02-06 2015-08-20 株式会社東芝 半導体装置及び撮像装置
CN105304656B (zh) * 2014-06-23 2018-06-22 上海箩箕技术有限公司 光电传感器
CN104637970B (zh) * 2015-03-03 2018-03-06 京东方科技集团股份有限公司 阵列基板及其制作方法、x射线平板探测器、摄像系统
CN110649068A (zh) * 2019-09-02 2020-01-03 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制备方法
CN110895374A (zh) * 2019-11-26 2020-03-20 上海天马微电子有限公司 显示面板及显示装置
KR20220033596A (ko) * 2020-09-08 2022-03-17 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 표시 장치 및 이의 제조 방법

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JP3444093B2 (ja) * 1996-06-10 2003-09-08 株式会社デンソー 光センサ回路
KR20050083654A (ko) * 2002-08-23 2005-08-26 마이크론 테크놀로지, 인크 적층형 아발란치 증폭층과 저전압 독출 회로를 구비한 씨모스 에이피에스
JP2006276590A (ja) 2005-03-30 2006-10-12 Sanyo Epson Imaging Devices Corp アクティブマトリクス型液晶表示装置

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JPH09283572A (ja) * 1996-04-17 1997-10-31 Nec Corp フィルム・キャリア半導体装置
JP3444093B2 (ja) * 1996-06-10 2003-09-08 株式会社デンソー 光センサ回路
KR20050083654A (ko) * 2002-08-23 2005-08-26 마이크론 테크놀로지, 인크 적층형 아발란치 증폭층과 저전압 독출 회로를 구비한 씨모스 에이피에스
JP2006276590A (ja) 2005-03-30 2006-10-12 Sanyo Epson Imaging Devices Corp アクティブマトリクス型液晶表示装置

Also Published As

Publication number Publication date
CN101211931B (zh) 2011-04-13
JP2008182214A (ja) 2008-08-07
CN101211931A (zh) 2008-07-02
KR20080061291A (ko) 2008-07-02
US7923800B2 (en) 2011-04-12
US20080156368A1 (en) 2008-07-03
JP5070030B2 (ja) 2012-11-07

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