KR101311615B1 - 반도체 웨이퍼의 주연부 에지를 연마하는 장치 및 방법 - Google Patents

반도체 웨이퍼의 주연부 에지를 연마하는 장치 및 방법 Download PDF

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Publication number
KR101311615B1
KR101311615B1 KR1020067026579A KR20067026579A KR101311615B1 KR 101311615 B1 KR101311615 B1 KR 101311615B1 KR 1020067026579 A KR1020067026579 A KR 1020067026579A KR 20067026579 A KR20067026579 A KR 20067026579A KR 101311615 B1 KR101311615 B1 KR 101311615B1
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South Korea
Prior art keywords
polishing
wafer
semiconductor wafer
tape
notch
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Korean (ko)
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KR20070116530A (ko
Inventor
다마미 다까하시
겐야 이또오
미쯔히꼬 시라까시
가즈유끼 이노우에
겐지 야마구찌
마사야 세끼
사또루 사또오
쥰 와따나베
겐지 가또오
쥰 다무라
소오이찌 아사까와
Original Assignee
가부시키가이샤 에바라 세이사꾸쇼
니혼 미크로 코팅 가부시끼 가이샤
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Publication of KR20070116530A publication Critical patent/KR20070116530A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/16—Machines or devices using grinding or polishing belts; Accessories therefor for grinding other surfaces of particular shape

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020067026579A 2005-04-19 2006-04-18 반도체 웨이퍼의 주연부 에지를 연마하는 장치 및 방법 Active KR101311615B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00121464 2005-04-19
JP2005121464A JP5196709B2 (ja) 2005-04-19 2005-04-19 半導体ウエハ周縁研磨装置及び方法
PCT/JP2006/308492 WO2006112531A1 (en) 2005-04-19 2006-04-18 Device for and method of polishing peripheral edge of semiconductor wafer

Publications (2)

Publication Number Publication Date
KR20070116530A KR20070116530A (ko) 2007-12-10
KR101311615B1 true KR101311615B1 (ko) 2013-09-26

Family

ID=37115231

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KR1020067026579A Active KR101311615B1 (ko) 2005-04-19 2006-04-18 반도체 웨이퍼의 주연부 에지를 연마하는 장치 및 방법

Country Status (7)

Country Link
US (1) US8029333B2 (enExample)
EP (1) EP1872393B1 (enExample)
JP (1) JP5196709B2 (enExample)
KR (1) KR101311615B1 (enExample)
CN (1) CN100550314C (enExample)
TW (1) TWI389769B (enExample)
WO (1) WO2006112531A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190057394A (ko) * 2016-12-20 2019-05-28 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법 및 실리콘 웨이퍼의 제조 방법
KR20240057686A (ko) 2022-10-25 2024-05-03 유한회사 씨티씨 반도체 기판 연마장치

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JP4999417B2 (ja) 2006-10-04 2012-08-15 株式会社荏原製作所 研磨装置、研磨方法、処理装置
TW200908124A (en) * 2007-05-21 2009-02-16 Applied Materials Inc Methods and apparatus for using a bevel polishing head with an efficient tape routing arrangement
US7976361B2 (en) 2007-06-29 2011-07-12 Ebara Corporation Polishing apparatus and polishing method
JP5254575B2 (ja) 2007-07-11 2013-08-07 株式会社東芝 研磨装置および研磨方法
JP2009045679A (ja) * 2007-08-16 2009-03-05 Ebara Corp 研磨装置
JP2009119537A (ja) 2007-11-12 2009-06-04 Toshiba Corp 基板処理方法及び基板処理装置
JP5274993B2 (ja) 2007-12-03 2013-08-28 株式会社荏原製作所 研磨装置
USD649126S1 (en) 2008-10-20 2011-11-22 Ebara Corporation Vacuum contact pad
USD616389S1 (en) 2008-10-20 2010-05-25 Ebara Corporation Vacuum contact pad
USD650344S1 (en) 2008-10-20 2011-12-13 Ebara Corporation Vacuum contact pad
JP2010153585A (ja) * 2008-12-25 2010-07-08 Ebara Corp 基板保持具および基板保持方法
DE102009047926A1 (de) * 2009-10-01 2011-04-14 Siltronic Ag Verfahren zum Polieren von Halbleiterscheiben
CN101791773B (zh) * 2010-03-29 2012-10-24 中国电子科技集团公司第四十五研究所 倒角机硅片定位工作台
US8695990B2 (en) 2010-04-01 2014-04-15 Nidec-Read Corporation Wafer flattening apparatus and method
JP5638406B2 (ja) * 2011-01-26 2014-12-10 株式会社ディスコ 研削装置
CN102601711B (zh) * 2012-03-20 2014-10-08 友达光电（苏州）有限公司 板体研磨装置
CN102962743B (zh) * 2012-11-28 2015-06-24 天津市环欧半导体材料技术有限公司 一种可加工非标硅片的倒角机
JP6071611B2 (ja) 2013-02-13 2017-02-01 Ｍｉｐｏｘ株式会社 オリエンテーションフラット等切り欠き部を有する、結晶材料から成るウエハの周縁を、研磨テープを使用して研磨することにより円形ウエハを製造する方法
CN103341457A (zh) * 2013-06-03 2013-10-09 上海华力微电子有限公司 硅片转速测定装置及其测定方法
US10249518B2 (en) * 2015-03-04 2019-04-02 Toshiba Memory Corporation Polishing device and polishing method
JP6587135B2 (ja) * 2015-03-31 2019-10-09 日本電気硝子株式会社 板ガラスの研磨加工方法及び研磨加工装置
JP6540430B2 (ja) * 2015-09-28 2019-07-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6539199B2 (ja) * 2015-12-18 2019-07-03 株式会社荏原製作所 基板搬送用移載機及び基板移載方法
JP6920849B2 (ja) * 2017-03-27 2021-08-18 株式会社荏原製作所 基板処理方法および装置
KR101971150B1 (ko) * 2017-08-18 2019-04-22 에스케이실트론 주식회사 웨이퍼의 에지 연마부, 이를 포함하는 웨이퍼의 에지 연마 장치 및 방법
JP6941008B2 (ja) * 2017-08-31 2021-09-29 株式会社荏原製作所 基板を研磨する方法および装置
JP7129166B2 (ja) 2018-01-11 2022-09-01 株式会社荏原製作所 基板処理装置及び制御方法
CN108436650A (zh) * 2018-03-08 2018-08-24 北京铂阳顶荣光伏科技有限公司 磨边方法及装置
JP6568986B1 (ja) * 2018-06-28 2019-08-28 平田機工株式会社 アライメント装置、半導体ウエハ処理装置、およびアライメント方法
CN108673305A (zh) * 2018-07-16 2018-10-19 湖北荣宝电子科技有限公司 一种印刷电路板加工用砂带削平装置
CN109822419B (zh) * 2019-03-04 2024-08-23 天通日进精密技术有限公司 晶圆转移装置及晶圆转移方法
CN110561230A (zh) * 2019-10-17 2019-12-13 浦江三思光电技术有限公司 一种陶瓷打磨装置及打磨方法
CN110752169B (zh) * 2019-10-21 2022-03-22 西安奕斯伟材料科技有限公司 一种晶圆处理装置和上下料方法
JP7610978B2 (ja) * 2020-12-24 2025-01-09 株式会社荏原製作所 ワークピース処理装置
US12374571B2 (en) 2021-05-28 2025-07-29 Applied Materials, Inc. Displacement measurements in semiconductor wafer processing
US12322662B2 (en) * 2021-05-28 2025-06-03 Applied Materials, Inc. Displacement measurements in semiconductor wafer processing
US11688600B1 (en) * 2021-12-03 2023-06-27 Pulseforge, Inc. Method and apparatus for removing particles from the surface of a semiconductor wafer
TW202427674A (zh) * 2022-04-27 2024-07-01 美商應用材料股份有限公司 半導體晶圓處理中之位移測量
CN115709438A (zh) * 2022-11-18 2023-02-24 北京烁科精微电子装备有限公司 研磨液滴定装置
CN117506689B (zh) * 2023-12-29 2024-03-22 苏州博宏源机械制造有限公司 一种硅片晶圆边缘抛光装置及方法
US12172266B1 (en) * 2024-03-18 2024-12-24 GrayMatter Robotics Inc. System and method for media blasting a workpiece

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Publication number Priority date Publication date Assignee Title
KR20190057394A (ko) * 2016-12-20 2019-05-28 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법 및 실리콘 웨이퍼의 제조 방법
KR102117362B1 (ko) 2016-12-20 2020-06-01 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법 및 실리콘 웨이퍼의 제조 방법
KR20240057686A (ko) 2022-10-25 2024-05-03 유한회사 씨티씨 반도체 기판 연마장치

Also Published As

Publication number Publication date
CN100550314C (zh) 2009-10-14
US20090093192A1 (en) 2009-04-09
US8029333B2 (en) 2011-10-04
WO2006112531A1 (en) 2006-10-26
TWI389769B (zh) 2013-03-21
JP2006303112A (ja) 2006-11-02
KR20070116530A (ko) 2007-12-10
EP1872393A1 (en) 2008-01-02
EP1872393A4 (en) 2011-04-20
TW200706307A (en) 2007-02-16
EP1872393B1 (en) 2015-05-27
CN101164148A (zh) 2008-04-16
JP5196709B2 (ja) 2013-05-15

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