KR101239889B1 - 박막 트랜지스터 기판 및 그 제조 방법 - Google Patents

박막 트랜지스터 기판 및 그 제조 방법 Download PDF

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Publication number
KR101239889B1
KR101239889B1 KR1020050074582A KR20050074582A KR101239889B1 KR 101239889 B1 KR101239889 B1 KR 101239889B1 KR 1020050074582 A KR1020050074582 A KR 1020050074582A KR 20050074582 A KR20050074582 A KR 20050074582A KR 101239889 B1 KR101239889 B1 KR 101239889B1
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South Korea
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gate insulating
semiconductor layer
layer
region
conductive
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Expired - Lifetime
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KR1020050074582A
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English (en)
Korean (ko)
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KR20070019914A (ko
Inventor
박경민
유춘기
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삼성디스플레이 주식회사
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Priority to KR1020050074582A priority Critical patent/KR101239889B1/ko
Priority to JP2006183068A priority patent/JP5348362B2/ja
Priority to CN2006101101429A priority patent/CN1913163B/zh
Priority to US11/502,806 priority patent/US7682881B2/en
Publication of KR20070019914A publication Critical patent/KR20070019914A/ko
Priority to US12/693,909 priority patent/US8253202B2/en
Application granted granted Critical
Publication of KR101239889B1 publication Critical patent/KR101239889B1/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020050074582A 2005-08-13 2005-08-13 박막 트랜지스터 기판 및 그 제조 방법 Expired - Lifetime KR101239889B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020050074582A KR101239889B1 (ko) 2005-08-13 2005-08-13 박막 트랜지스터 기판 및 그 제조 방법
JP2006183068A JP5348362B2 (ja) 2005-08-13 2006-07-03 薄膜トランジスタ基板の製造方法
CN2006101101429A CN1913163B (zh) 2005-08-13 2006-08-07 薄膜晶体管衬底及其制造方法
US11/502,806 US7682881B2 (en) 2005-08-13 2006-08-11 Thin film transistor substrate and method of manufacturing the same
US12/693,909 US8253202B2 (en) 2005-08-13 2010-01-26 Thin film transistor substrate and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050074582A KR101239889B1 (ko) 2005-08-13 2005-08-13 박막 트랜지스터 기판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20070019914A KR20070019914A (ko) 2007-02-16
KR101239889B1 true KR101239889B1 (ko) 2013-03-06

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KR1020050074582A Expired - Lifetime KR101239889B1 (ko) 2005-08-13 2005-08-13 박막 트랜지스터 기판 및 그 제조 방법

Country Status (4)

Country Link
US (2) US7682881B2 (enExample)
JP (1) JP5348362B2 (enExample)
KR (1) KR101239889B1 (enExample)
CN (1) CN1913163B (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US10580902B2 (en) 2016-09-05 2020-03-03 Samsung Display Co., Ltd. Transistor, thin film transistor array panel, and related manufacturing method

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JP5005302B2 (ja) * 2006-09-19 2012-08-22 株式会社ジャパンディスプレイイースト 表示装置の製造方法
KR100917654B1 (ko) * 2006-11-10 2009-09-17 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 박막트랜지스터 액정 디스플레이 화소 구조 및 그 제조방법
KR101576813B1 (ko) * 2007-08-17 2015-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
JP5948025B2 (ja) 2010-08-06 2016-07-06 株式会社半導体エネルギー研究所 液晶表示装置
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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WO2012160800A1 (ja) 2011-05-24 2012-11-29 シャープ株式会社 半導体装置の製造方法
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CN202549848U (zh) 2012-04-28 2012-11-21 京东方科技集团股份有限公司 显示装置、阵列基板和薄膜晶体管
TW201413825A (zh) * 2012-09-17 2014-04-01 Ying-Jia Xue 薄膜電晶體的製作方法
CN102856260B (zh) * 2012-09-26 2015-08-19 京东方科技集团股份有限公司 一种cmos晶体管及其制造方法
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CN103258827B (zh) * 2013-04-28 2016-03-23 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
KR20150000215A (ko) * 2013-06-24 2015-01-02 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR102091664B1 (ko) * 2013-09-27 2020-03-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조방법
CN104103584A (zh) * 2014-06-25 2014-10-15 京东方科技集团股份有限公司 阵列基板制作方法
CN104465405B (zh) * 2014-12-30 2017-09-22 京东方科技集团股份有限公司 薄膜晶体管的制作方法及阵列基板的制作方法
CN104716092B (zh) * 2015-04-02 2017-11-10 京东方科技集团股份有限公司 阵列基板的制造方法及制造装置
CN105140124B (zh) * 2015-07-29 2018-12-11 武汉华星光电技术有限公司 一种多晶硅薄膜晶体管的制作方法
KR20170080996A (ko) * 2015-12-31 2017-07-11 삼성디스플레이 주식회사 표시 장치용 박막 트랜지스터 및 이를 포함하는 유기 발광 표시 장치
CN105514119A (zh) * 2016-01-04 2016-04-20 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板
KR102568776B1 (ko) * 2016-03-28 2023-08-22 삼성디스플레이 주식회사 유기 발광 표시 장치
CN106531690B (zh) * 2016-12-19 2020-03-10 武汉新芯集成电路制造有限公司 一种轻掺杂漏区的形成方法
CN106910712B (zh) * 2017-03-03 2019-09-24 厦门天马微电子有限公司 阵列基板的制作方法
CN107464836B (zh) * 2017-07-19 2020-04-10 深圳市华星光电半导体显示技术有限公司 一种顶栅型薄膜晶体管的制作方法及顶栅型薄膜晶体管
US10957713B2 (en) * 2018-04-19 2021-03-23 Wuhan China Star Optoelectronics Technology Co., Ltd. LTPS TFT substrate and manufacturing method thereof
CN108565247B (zh) * 2018-04-19 2020-09-29 武汉华星光电技术有限公司 Ltps tft基板的制作方法及ltps tft基板
CN108511464B (zh) * 2018-04-20 2020-07-28 武汉华星光电技术有限公司 Cmos型ltps tft基板的制作方法
WO2020177057A1 (zh) * 2019-03-04 2020-09-10 京东方科技集团股份有限公司 Cmos结构及cmos结构的制造方法
CN114267684B (zh) * 2020-09-25 2025-04-29 武汉天马微电子有限公司 薄膜晶体管基板及薄膜晶体管基板的制造方法
CN112542516B (zh) * 2020-11-03 2024-01-30 北海惠科光电技术有限公司 一种主动开关及其制作方法和显示面板
JP7623864B2 (ja) 2021-03-22 2025-01-29 武漢天馬微電子有限公司 薄膜トランジスタ基板
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US10985281B2 (en) 2016-09-05 2021-04-20 Samsung Display Co., Ltd. Transistor, thin film transistor array panel, and related manufacturing method

Also Published As

Publication number Publication date
KR20070019914A (ko) 2007-02-16
JP5348362B2 (ja) 2013-11-20
US8253202B2 (en) 2012-08-28
US7682881B2 (en) 2010-03-23
US20070045627A1 (en) 2007-03-01
JP2007053343A (ja) 2007-03-01
CN1913163B (zh) 2010-06-16
US20100127329A1 (en) 2010-05-27
CN1913163A (zh) 2007-02-14

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