KR101199076B1 - 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소 - Google Patents

강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소 Download PDF

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Publication number
KR101199076B1
KR101199076B1 KR1020077000237A KR20077000237A KR101199076B1 KR 101199076 B1 KR101199076 B1 KR 101199076B1 KR 1020077000237 A KR1020077000237 A KR 1020077000237A KR 20077000237 A KR20077000237 A KR 20077000237A KR 101199076 B1 KR101199076 B1 KR 101199076B1
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South Korea
Prior art keywords
delete delete
reflectance
layer system
interference layer
projection objective
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Expired - Fee Related
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KR1020077000237A
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English (en)
Korean (ko)
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KR20070041497A (ko
Inventor
파트리크 샤이블레
알렉산드라 파찌디스
라이너 가라이스
미카엘 토트쩨크
하이코 펠트만
파울 그로이프너
한스-위르겐 로스탈스키
볼프강 징거
Original Assignee
칼 짜이스 에스엠티 게엠베하
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Publication of KR20070041497A publication Critical patent/KR20070041497A/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/02Telephoto objectives, i.e. systems of the type + - in which the distance from the front vertex to the image plane is less than the equivalent focal length
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0804Catadioptric systems using two curved mirrors
    • G02B17/0812Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0892Catadioptric systems specially adapted for the UV
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/32Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52Details
    • G03B27/54Lamp housings; Illuminating means
    • G03B27/545Lamp housings; Illuminating means for enlargers
    • G03B27/547Lamp housings; Illuminating means for enlargers colour mixing heads
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/72Controlling or varying light intensity, spectral composition, or exposure time in photographic printing apparatus
    • G03B27/725Optical projection devices wherein the contrast is controlled electrically (e.g. cathode ray tube masking)
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70133Measurement of illumination distribution, in pupil plane or field plane
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70308Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020077000237A 2004-06-04 2005-06-03 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소 Expired - Fee Related KR101199076B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US57680804P 2004-06-04 2004-06-04
US60/576,808 2004-06-04
US63325804P 2004-12-03 2004-12-03
US60/633,258 2004-12-03
PCT/EP2005/005979 WO2005119369A1 (en) 2004-06-04 2005-06-03 Projection system with compensation of intensity variatons and compensation element therefor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020117023187A Division KR101248328B1 (ko) 2004-06-04 2005-06-03 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소

Publications (2)

Publication Number Publication Date
KR20070041497A KR20070041497A (ko) 2007-04-18
KR101199076B1 true KR101199076B1 (ko) 2012-11-07

Family

ID=34969021

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117023187A Expired - Fee Related KR101248328B1 (ko) 2004-06-04 2005-06-03 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소
KR1020077000237A Expired - Fee Related KR101199076B1 (ko) 2004-06-04 2005-06-03 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020117023187A Expired - Fee Related KR101248328B1 (ko) 2004-06-04 2005-06-03 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소

Country Status (5)

Country Link
US (1) US8605257B2 (enExample)
EP (1) EP1759248A1 (enExample)
JP (2) JP4913041B2 (enExample)
KR (2) KR101248328B1 (enExample)
WO (1) WO2005119369A1 (enExample)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
CN104678715B (zh) 2003-02-26 2017-05-17 株式会社尼康 曝光方法以及器件制造方法
KR101697896B1 (ko) 2003-04-11 2017-01-18 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101520591B1 (ko) 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
JP4437474B2 (ja) 2003-06-19 2010-03-24 株式会社ニコン 露光装置及びデバイス製造方法
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
WO2005006416A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 結合装置、露光装置、及びデバイス製造方法
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
WO2005006418A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
EP3346485A1 (en) 2003-07-25 2018-07-11 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
KR101642670B1 (ko) 2003-07-28 2016-07-25 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100407371C (zh) 2003-08-29 2008-07-30 株式会社尼康 曝光装置和器件加工方法
KR101308826B1 (ko) 2003-09-03 2013-09-13 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
KR101664642B1 (ko) 2003-09-29 2016-10-11 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
JP2005136364A (ja) 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
EP1672682A4 (en) 2003-10-08 2008-10-15 Zao Nikon Co Ltd SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
WO2005036621A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
TWI605315B (zh) 2003-12-03 2017-11-11 Nippon Kogaku Kk Exposure device, exposure method, and device manufacturing method
JP4720506B2 (ja) 2003-12-15 2011-07-13 株式会社ニコン ステージ装置、露光装置、及び露光方法
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US7990516B2 (en) 2004-02-03 2011-08-02 Nikon Corporation Immersion exposure apparatus and device manufacturing method with liquid detection apparatus
WO2005111722A2 (en) 2004-05-04 2005-11-24 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
WO2005119368A2 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101342330B1 (ko) 2004-07-12 2013-12-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4599936B2 (ja) * 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US20090262316A1 (en) 2005-01-31 2009-10-22 Nikon Corporation Exposure apparatus and method for producing device
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
DE102005041938A1 (de) 2005-09-03 2007-03-08 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
US7629572B2 (en) * 2005-10-28 2009-12-08 Carl Zeiss Laser Optics Gmbh Optical devices and related systems and methods
US7518797B2 (en) 2005-12-02 2009-04-14 Carl Zeiss Smt Ag Microlithographic exposure apparatus
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006013459A1 (de) * 2006-03-23 2007-09-27 Infineon Technologies Ag Anordnung zur Übertragung von Strukturelementen einer Photomaske auf ein Substrat und Verfahren zur Übertragung von Strukturelementen einer Photomaske auf ein Substrat
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
EP1930771A1 (en) 2006-12-04 2008-06-11 Carl Zeiss SMT AG Projection objectives having mirror elements with reflective coatings
KR101399768B1 (ko) 2006-12-28 2014-05-27 칼 짜이스 에스엠티 게엠베하 기울어진 편향 미러를 갖는 반사굴절식 투영 대물렌즈, 투영 노광 장치, 투영 노광 방법 및 미러
DE102007023411A1 (de) * 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
JP2010517310A (ja) 2007-01-30 2010-05-20 カール・ツァイス・エスエムティー・アーゲー マイクロリソグラフィ投影露光装置の照明システム
JP5165700B2 (ja) 2007-02-28 2013-03-21 カール・ツァイス・エスエムティー・ゲーエムベーハー 瞳補正を有する反射屈折投影対物系
JP5461387B2 (ja) * 2007-04-03 2014-04-02 カール・ツァイス・エスエムティー・ゲーエムベーハー 特にマイクロリソグラフィ投影露光装置の照明デバイス又は投影対物器械である光学システム
US7929115B2 (en) * 2007-06-01 2011-04-19 Carl Zeiss Smt Gmbh Projection objective and projection exposure apparatus for microlithography
US7817250B2 (en) * 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
JP5224218B2 (ja) * 2007-07-23 2013-07-03 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学システム
CN101836163B (zh) 2007-08-20 2012-06-27 卡尔蔡司Smt有限责任公司 包括具有反射涂层的镜元件的投射物镜
JP5097166B2 (ja) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置の動作方法
JP5473350B2 (ja) * 2009-02-13 2014-04-16 キヤノン株式会社 照明光学系、露光装置及びデバイスの製造方法
DE102009047179B8 (de) 2009-11-26 2016-08-18 Carl Zeiss Smt Gmbh Projektionsobjektiv
DE102011084152A1 (de) * 2011-10-07 2013-04-11 Carl Zeiss Smt Gmbh Verfahren zur Einstellung der Intensitätsverteilung in einem optischen System einer mikrolithographischen Projektionsbelichtungsanlage, sowie optisches System
DE102012205615A1 (de) 2012-04-04 2013-10-10 Carl Zeiss Smt Gmbh Beschichtungsverfahren, Beschichtungsanlage und optisches Element mit Beschichtung
JP6069919B2 (ja) 2012-07-11 2017-02-01 旭硝子株式会社 Euvリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板およびその製造方法
JP5746259B2 (ja) * 2013-05-07 2015-07-08 カール・ツァイス・エスエムティー・ゲーエムベーハー 反射コーティングを備えたミラー要素を有する投影対物系
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DE102016212373A1 (de) 2016-07-07 2018-01-11 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102017202802A1 (de) * 2017-02-21 2018-08-23 Carl Zeiss Smt Gmbh Objektiv und optisches System mit einem solchen Objektiv
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JP7253717B2 (ja) 2019-05-30 2023-04-07 パナソニックIpマネジメント株式会社 投影装置及びヘッドアップディスプレイ
JP7402702B2 (ja) * 2020-01-31 2023-12-21 リコーインダストリアルソリューションズ株式会社 結像光学系および画像表示装置および撮像装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001508340A (ja) * 1997-01-13 2001-06-26 メディスペクトラ インコーポレーテッド 空間的に分解された光学的測定
US20030099034A1 (en) * 2001-08-01 2003-05-29 Carl Zeiss Semiconductor Manufacturing Techniologies Ag Reflective projection lens for EUV-photolithography

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0023231B1 (de) * 1979-07-27 1982-08-11 Tabarelli, Werner, Dr. Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US5222112A (en) * 1990-12-27 1993-06-22 Hitachi, Ltd. X-ray pattern masking by a reflective reduction projection optical system
US5333166A (en) 1992-08-28 1994-07-26 Intel Corporation Self-apodizing collimator for x-ray lithography
JP3635684B2 (ja) * 1994-08-23 2005-04-06 株式会社ニコン 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置
JPH0778753A (ja) * 1993-09-07 1995-03-20 Canon Inc 投影露光装置及びそれを用いた半導体素子の製造方法
JPH07211617A (ja) * 1994-01-25 1995-08-11 Hitachi Ltd パターン形成方法,マスク、及び投影露光装置
JP3395801B2 (ja) * 1994-04-28 2003-04-14 株式会社ニコン 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US20010041843A1 (en) 1999-02-02 2001-11-15 Mark Modell Spectral volume microprobe arrays
JP3065017B2 (ja) * 1997-02-28 2000-07-12 キヤノン株式会社 投影露光装置及びデバイスの製造方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JPH1138323A (ja) * 1997-07-16 1999-02-12 Nikon Corp 反射光学系及び露光装置
DE19807120A1 (de) * 1998-02-20 1999-08-26 Zeiss Carl Fa Optisches System mit Polarisationskompensator
US6243203B1 (en) * 1998-04-24 2001-06-05 U.S. Philips Corporation Optical system with anti-reflection coating
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000331927A (ja) * 1999-03-12 2000-11-30 Canon Inc 投影光学系及びそれを用いた投影露光装置
DE19929403A1 (de) * 1999-06-26 2000-12-28 Zeiss Carl Fa Objektiv, insbesondere Objektiv für eine Halbleiter-Lithographie-Projektionsbelichtungsanlage und Herstellungverfahren
AU6061000A (en) * 1999-07-01 2001-01-22 Bruce W. Smith Apparatus and method of image enhancement through spatial filtering
DE10029938A1 (de) * 1999-07-09 2001-07-05 Zeiss Carl Optisches System für das Vakuum-Ultraviolett
JP2001168000A (ja) * 1999-12-03 2001-06-22 Nikon Corp 露光装置の製造方法、および該製造方法によって製造された露光装置を用いたマイクロデバイスの製造方法
US6324003B1 (en) * 1999-12-23 2001-11-27 Silicon Valley Group, Inc. Calcium fluoride (CaF2) stress plate and method of making the same
JP4532647B2 (ja) * 2000-02-23 2010-08-25 キヤノン株式会社 露光装置
US6480330B1 (en) * 2000-02-24 2002-11-12 Silicon Valley Group, Inc. Ultraviolet polarization beam splitter for microlithography
KR100379246B1 (ko) * 2000-07-12 2003-04-08 한국과학기술연구원 두께에 따라 빔의 세기 분포 조절이 용이한 연속 중성밀도필터
US20020089758A1 (en) * 2001-01-05 2002-07-11 Nikon Corporation Optical component thickness adjustment method, optical component, and position adjustment method for optical component
JP4929529B2 (ja) 2001-03-27 2012-05-09 株式会社ニコン 光学系の製造方法、および該製造方法で製造された光学系を備えた露光装置
US6862398B2 (en) * 2001-03-30 2005-03-01 Texas Instruments Incorporated System for directed molecular interaction in surface plasmon resonance analysis
WO2002093209A2 (de) * 2001-05-15 2002-11-21 Carl Zeiss Objektiv mit fluorid-kristall-linsen
DE10124474A1 (de) * 2001-05-19 2002-11-21 Zeiss Carl Mikrolithographisches Belichtungsverfahren sowie Projektionsobjektiv zur Durchführung des Verfahrens
US6683710B2 (en) * 2001-06-01 2004-01-27 Optical Research Associates Correction of birefringence in cubic crystalline optical systems
BR0103248A (pt) * 2001-06-13 2004-03-23 Fundacao De Amparo A Pesquisa Elemento óptico com modulação complexa completa de frentes de onda de luz, e seu processo de obtenção
DE10133841A1 (de) * 2001-07-18 2003-02-06 Zeiss Carl Objektiv mit Kristall-Linsen
EP1291680A2 (en) 2001-08-27 2003-03-12 Nikon Corporation Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations
DE10237430A1 (de) 2001-09-17 2003-04-03 Zeiss Carl Semiconductor Mfg Verfahren und Beschichtungsanlage zum Beschichten von Substraten für optische Komponenten
JP2003266011A (ja) * 2001-09-17 2003-09-24 Cark Zeiss Smt Ag 光学部材用の基板の塗布方法および塗布装置
AU2002360329A1 (en) * 2001-10-30 2003-05-12 Optical Research Associates Structures and methods for reducing aberration in optical systems
JP4016179B2 (ja) * 2002-02-28 2007-12-05 ソニー株式会社 露光装置及び収束レンズの制御方法
US7075721B2 (en) * 2002-03-06 2006-07-11 Corning Incorporated Compensator for radially symmetric birefringence
DE10210899A1 (de) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10218989A1 (de) * 2002-04-24 2003-11-06 Zeiss Carl Smt Ag Projektionsverfahren und Projektionssystem mit optischer Filterung
DE10229614A1 (de) * 2002-06-25 2004-01-15 Carl Zeiss Smt Ag Katadioptrisches Reduktionsobjektiv
TWI242691B (en) * 2002-08-23 2005-11-01 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
JP4366990B2 (ja) * 2003-05-08 2009-11-18 株式会社ニコン 投影光学系、露光装置及び露光方法
EP1491956B1 (en) * 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005059645A2 (en) * 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
JP2005191381A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
JP2005195713A (ja) * 2004-01-05 2005-07-21 Nikon Corp 投影光学系、露光装置、および露光方法
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
JP2007520893A (ja) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
JP2005235921A (ja) * 2004-02-18 2005-09-02 Nikon Corp 光学系の調整方法、結像光学系、露光装置、および露光方法
KR101213831B1 (ko) * 2004-05-17 2012-12-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001508340A (ja) * 1997-01-13 2001-06-26 メディスペクトラ インコーポレーテッド 空間的に分解された光学的測定
US20030099034A1 (en) * 2001-08-01 2003-05-29 Carl Zeiss Semiconductor Manufacturing Techniologies Ag Reflective projection lens for EUV-photolithography

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JP2012028803A (ja) 2012-02-09
EP1759248A1 (en) 2007-03-07
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