KR101187601B1 - 경화성 실리콘 조성물 및 전자 부품 - Google Patents

경화성 실리콘 조성물 및 전자 부품 Download PDF

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Publication number
KR101187601B1
KR101187601B1 KR1020077024763A KR20077024763A KR101187601B1 KR 101187601 B1 KR101187601 B1 KR 101187601B1 KR 1020077024763 A KR1020077024763 A KR 1020077024763A KR 20077024763 A KR20077024763 A KR 20077024763A KR 101187601 B1 KR101187601 B1 KR 101187601B1
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South Korea
Prior art keywords
component
curable silicone
silicone composition
sio
group
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Expired - Fee Related
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KR1020077024763A
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English (en)
Korean (ko)
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KR20070122512A (ko
Inventor
요시쓰구 모리타
미노루 잇시키
도모코 가토
Original Assignee
다우 코닝 도레이 캄파니 리미티드
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Publication of KR20070122512A publication Critical patent/KR20070122512A/ko
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
    • C08G59/4085—Curing agents not provided for by the groups C08G59/42 - C08G59/66 silicon containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
KR1020077024763A 2005-04-27 2006-04-27 경화성 실리콘 조성물 및 전자 부품 Expired - Fee Related KR101187601B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00129442 2005-04-27
JP2005129442A JP4931366B2 (ja) 2005-04-27 2005-04-27 硬化性シリコーン組成物および電子部品
PCT/JP2006/309219 WO2006118335A1 (en) 2005-04-27 2006-04-27 Curable silicone composition and electronic components

Publications (2)

Publication Number Publication Date
KR20070122512A KR20070122512A (ko) 2007-12-31
KR101187601B1 true KR101187601B1 (ko) 2012-10-11

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KR1020077024763A Expired - Fee Related KR101187601B1 (ko) 2005-04-27 2006-04-27 경화성 실리콘 조성물 및 전자 부품

Country Status (9)

Country Link
US (1) US8338527B2 (enExample)
EP (1) EP1874870B1 (enExample)
JP (1) JP4931366B2 (enExample)
KR (1) KR101187601B1 (enExample)
CN (1) CN101166792B (enExample)
AT (1) ATE410484T1 (enExample)
DE (1) DE602006003085D1 (enExample)
TW (1) TWI386461B (enExample)
WO (1) WO2006118335A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4931366B2 (ja) 2005-04-27 2012-05-16 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5207591B2 (ja) * 2006-02-23 2013-06-12 東レ・ダウコーニング株式会社 半導体装置の製造方法および半導体装置
JP5285846B2 (ja) 2006-09-11 2013-09-11 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5306592B2 (ja) * 2006-12-04 2013-10-02 東レ・ダウコーニング株式会社 硬化性エポキシ樹脂組成物、硬化物、およびその用途
JP5248012B2 (ja) 2006-12-25 2013-07-31 東レ・ダウコーニング株式会社 硬化性シリコーン組成物
JP5238157B2 (ja) 2006-12-25 2013-07-17 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5547369B2 (ja) * 2007-09-28 2014-07-09 東レ・ダウコーニング株式会社 硬化性液状エポキシ樹脂組成物およびその硬化物
JP5251919B2 (ja) * 2009-05-08 2013-07-31 信越化学工業株式会社 光半導体素子封止用樹脂組成物
KR101074505B1 (ko) * 2010-01-25 2011-10-17 주식회사 엘지화학 광전지 모듈
EP2530740B1 (en) * 2010-01-25 2018-08-01 LG Chem, Ltd. Photovoltaic module
EP2530731B1 (en) * 2010-01-25 2016-03-30 LG Chem, Ltd. Sheet for photovoltaic cells
KR101556274B1 (ko) 2012-12-28 2015-09-30 제일모직 주식회사 봉지재 조성물, 봉지재 및 전자 소자
MX2015017158A (es) * 2013-06-19 2016-03-16 Akzo Nobel Coatings Int Bv Composicion de recubrimiento en polvo resistente a altas temperaturas, metodo de preparacion de la misma y utilizacion de la misma.
CN104830024B (zh) 2014-01-15 2018-02-06 财团法人工业技术研究院 有机无机混成树脂、包含其的模塑组合物、以及光电装置
CN105339410B (zh) * 2014-06-04 2019-08-20 日立化成株式会社 膜状环氧树脂组合物、膜状环氧树脂组合物的制造方法和半导体装置的制造方法
CN105219097B (zh) * 2014-06-30 2017-12-08 广州慧谷化学有限公司 一种可固化的硅橡胶组合物及半导体器件

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3168405A (en) 1962-12-28 1965-02-02 Procter & Gamble Culinary composition containing edible acidic lipid anhydrides
US3410820A (en) 1966-08-01 1968-11-12 Gen Electric Room temperature vulcanizing compositions
JPH0617458B2 (ja) 1987-03-16 1994-03-09 信越化学工業株式会社 エポキシ樹脂組成物
PH27310A (en) * 1988-05-13 1993-05-28 M & T Chemicals Inc Epoxy-aromatic polysiloxane compositions
JPH0297559A (ja) 1988-10-03 1990-04-10 Toshiba Silicone Co Ltd 熱伝導性シリコーン組成物
US5206312A (en) 1989-11-20 1993-04-27 The Dow Chemical Company Aromatic hydroxyl-containing compounds containing organosiloxane moieties, epoxy compounds and cured products thereof
MY107113A (en) 1989-11-22 1995-09-30 Sumitomo Bakelite Co Epoxy resin composition for semiconductor sealing.
JP2712093B2 (ja) * 1990-06-29 1998-02-10 東芝シリコーン株式会社 紫外線硬化性シリコーン組成物
JP2511348B2 (ja) 1991-10-17 1996-06-26 東レ・ダウコーニング・シリコーン株式会社 オルガノポリシロキサンおよびその製造方法
JP3161786B2 (ja) * 1991-11-20 2001-04-25 東レ・ダウコーニング・シリコーン株式会社 オルガノポリシロキサンおよびその製造方法
US5319005A (en) 1992-01-27 1994-06-07 Hitachi Chemical Co., Ltd. Epoxy resin molding material for sealing of electronic component
JP3193106B2 (ja) 1992-03-05 2001-07-30 日東電工株式会社 エポキシ樹脂組成物の硬化方法および硬化物
JP3367964B2 (ja) 1992-04-21 2003-01-20 東レ・ダウコーニング・シリコーン株式会社 硬化性樹脂組成物
JP3786139B2 (ja) 1992-05-26 2006-06-14 東レ・ダウコーニング株式会社 硬化性シリコーン組成物
JP3251655B2 (ja) 1992-08-05 2002-01-28 東レ・ダウコーニング・シリコーン株式会社 ジオルガノポリシロキサンおよびその製造方法
US5645941A (en) 1992-11-19 1997-07-08 Shin-Etsu Chemical Co., Ltd. Silicone resin/silicone rubber composite material
EP0620242B1 (en) * 1993-04-15 1998-08-19 Dow Corning Toray Silicone Company, Limited Epoxy group-containing silicone resin and compositions based thereon
US5952439A (en) 1993-04-15 1999-09-14 Dow Corning Toray Silicone Co., Ltd. Epoxy group-containing silicone resin and compositions based thereon
JP2781799B2 (ja) 1993-04-20 1998-07-30 信越ポリマー株式会社 硬質キートップ押釦スイッチ用カバー部材
JP2812139B2 (ja) 1993-04-27 1998-10-22 信越化学工業株式会社 エポキシ樹脂組成物
JP2695598B2 (ja) 1993-06-30 1997-12-24 住友ベークライト株式会社 ダイボンディング材
JP3466239B2 (ja) 1993-08-18 2003-11-10 東レ・ダウコーニング・シリコーン株式会社 硬化性樹脂組成物
DE69407137T2 (de) 1993-10-06 1998-04-09 Dow Corning Toray Silicone Mit Silber gefüllte, elektrisch leitfähige Organosiloxan-Zusammensetzungen
JP3035135B2 (ja) 1993-10-25 2000-04-17 住友ベークライト株式会社 ダイボンディング材
JPH07133351A (ja) 1993-11-08 1995-05-23 Shin Etsu Chem Co Ltd エポキシ変性シリコーンの製造方法
JP2834658B2 (ja) 1993-12-02 1998-12-09 住友ベークライト株式会社 半導体用導電性樹脂ペースト
TW343218B (en) 1994-03-25 1998-10-21 Shinetsu Chem Ind Co Integral composite consisted of polysiloxane rubber and epoxy resin and process for producing the same
DE4424105A1 (de) 1994-07-08 1996-01-11 Bayer Ag Epoxigruppen enthaltende Siloxane und ihre Mischungen mit Polycarbonaten
JP3574226B2 (ja) 1994-10-28 2004-10-06 東レ・ダウコーニング・シリコーン株式会社 硬化性シリコーン組成物およびその硬化物
TW296400B (enExample) 1994-11-17 1997-01-21 Shinetsu Chem Ind Co
JP3516764B2 (ja) 1995-03-08 2004-04-05 アピックヤマダ株式会社 リリースフィルムを用いる樹脂モールド装置及び樹脂モールド方法
US5575956A (en) 1995-07-19 1996-11-19 Hughes Aircraft Company Room-temperature stable, one-component, electrically-conductive, flexible epoxy adhesives
JP3313267B2 (ja) 1995-09-28 2002-08-12 住友ベークライト株式会社 導電性樹脂ペースト
JPH1036510A (ja) * 1996-07-26 1998-02-10 Toray Dow Corning Silicone Co Ltd 電気部品およびその製造方法
JP3411164B2 (ja) 1996-10-31 2003-05-26 住友ベークライト株式会社 ダイアタッチペースト
JPH10147764A (ja) 1996-11-20 1998-06-02 Sumitomo Bakelite Co Ltd ダイアタッチペースト及び半導体装置
JP3469446B2 (ja) * 1996-11-29 2003-11-25 株式会社東芝 樹脂組成物およびこれを用いた樹脂封止型半導体装置の製造方法
US5859127A (en) 1996-11-29 1999-01-12 Shin-Etsu Polymer Co., Ltd. Thermosetting resin composition and two-parts composite body thereof with silcone rubber
JP3313292B2 (ja) 1996-12-04 2002-08-12 住友ベークライト株式会社 ダイアタッチペースト
JP3420473B2 (ja) 1997-04-30 2003-06-23 東レ・ダウコーニング・シリコーン株式会社 シリコーン系接着性シート、その製造方法、および半導体装置
JPH1177733A (ja) 1997-09-01 1999-03-23 Apic Yamada Kk 樹脂モールド方法及び樹脂モールド装置
US6117953A (en) 1998-01-22 2000-09-12 Shin-Etsu Chemical Co., Ltd. Liquid epoxy resin composition for ball grid array package
JP2000198929A (ja) 1998-10-30 2000-07-18 Dow Corning Toray Silicone Co Ltd 複合成形用シリコーンゴム組成物
JP2000230039A (ja) 1998-12-08 2000-08-22 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
JP3494586B2 (ja) 1999-03-26 2004-02-09 アピックヤマダ株式会社 樹脂封止装置及び樹脂封止方法
US6512031B1 (en) 1999-04-15 2003-01-28 Shin-Etsu Chemical Co., Ltd. Epoxy resin composition, laminate film using the same, and semiconductor device
US6861482B2 (en) 1999-05-18 2005-03-01 General Electric Company Weatherable, thermostable polymers having improved flow composition
US7169859B2 (en) 1999-05-18 2007-01-30 General Electric Company Weatherable, thermostable polymers having improved flow composition
TW521256B (en) * 2000-05-18 2003-02-21 Semiconductor Energy Lab Electronic device and method of driving the same
JP4646357B2 (ja) 2000-06-08 2011-03-09 東レ・ダウコーニング株式会社 熱伝導性シリコーンゴム組成物
JP2002020719A (ja) 2000-07-11 2002-01-23 Shin Etsu Chem Co Ltd シリコーンゴム接着剤組成物及び該接着剤組成物と熱可塑性樹脂との一体成形体
JP4278309B2 (ja) * 2001-01-24 2009-06-10 ニチアス株式会社 シリコーン表面層を有するフッ素ゴム成形体及びフッ素ゴム成形体の表面処理法
US6709756B2 (en) 2001-05-21 2004-03-23 Shin-Etsu Chemical Co., Ltd. Optical device-related adhesive and optical device
AU2002257325A1 (en) 2001-05-29 2002-12-09 Vanderbilt University Cleavable surfactants and methods of use thereof
JP4948716B2 (ja) 2001-06-29 2012-06-06 東レ・ダウコーニング株式会社 硬化性エポキシ樹脂組成物
US6632892B2 (en) 2001-08-21 2003-10-14 General Electric Company Composition comprising silicone epoxy resin, hydroxyl compound, anhydride and curing catalyst
JP3803058B2 (ja) 2001-12-11 2006-08-02 信越化学工業株式会社 熱伝導性シリコーン組成物、その硬化物及び敷設方法並びにそれを用いた半導体装置の放熱構造体
JP4050070B2 (ja) 2002-02-28 2008-02-20 東レ・ダウコーニング株式会社 シリコーンレジン組成物、硬化性樹脂組成物、および硬化物
JP4663969B2 (ja) 2002-07-09 2011-04-06 東レ・ダウコーニング株式会社 硬化性シリコーンレジン組成物およびその硬化物
JP2004043814A (ja) 2002-07-15 2004-02-12 Dow Corning Toray Silicone Co Ltd シリコーン系接着性シート、半導体チップと該チップ取付部の接着方法、および半導体装置
JP4409160B2 (ja) * 2002-10-28 2010-02-03 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP4607429B2 (ja) 2003-03-25 2011-01-05 東レ・ダウコーニング株式会社 半導体装置の製造方法および半導体装置
US6836156B2 (en) * 2003-04-25 2004-12-28 Broadcom Corp. High frequency signal peak detector
JP2004352947A (ja) 2003-05-30 2004-12-16 Shin Etsu Chem Co Ltd 室温硬化型熱伝導性シリコーンゴム組成物
KR100517075B1 (ko) 2003-08-11 2005-09-26 삼성전자주식회사 반도체 소자 제조 방법
JP2005075959A (ja) 2003-09-01 2005-03-24 Dow Corning Toray Silicone Co Ltd 粘着性シリコーンエラストマーシート
US20050267286A1 (en) 2003-10-20 2005-12-01 Shinya Nakamura Curing accelerator for curing resin, curing resin composition, electronic component device and method for producing phosphine derivative
TWI345576B (en) 2003-11-07 2011-07-21 Dow Corning Toray Silicone Curable silicone composition and cured product thereof
JP4803339B2 (ja) 2003-11-20 2011-10-26 信越化学工業株式会社 エポキシ・シリコーン混成樹脂組成物及び発光半導体装置
JP5101788B2 (ja) 2003-12-22 2012-12-19 東レ・ダウコーニング株式会社 半導体装置の製造方法および半導体装置
JP4903987B2 (ja) 2004-03-19 2012-03-28 東レ・ダウコーニング株式会社 半導体装置の製造方法
JP2006063092A (ja) 2004-07-29 2006-03-09 Dow Corning Toray Co Ltd 硬化性オルガノポリシロキサン組成物、その硬化方法、光半導体装置および接着促進剤
CN1737072B (zh) 2004-08-18 2011-06-08 播磨化成株式会社 导电粘合剂及使用该导电粘合剂制造物件的方法
JP5166677B2 (ja) * 2005-03-15 2013-03-21 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP4931366B2 (ja) 2005-04-27 2012-05-16 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5004433B2 (ja) 2005-04-27 2012-08-22 東レ・ダウコーニング株式会社 硬化性シリコーン組成物およびその硬化物
JP4017645B2 (ja) 2005-12-22 2007-12-05 横浜ゴム株式会社 湿気硬化性樹脂組成物
JP5207591B2 (ja) * 2006-02-23 2013-06-12 東レ・ダウコーニング株式会社 半導体装置の製造方法および半導体装置
JP5285846B2 (ja) * 2006-09-11 2013-09-11 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5238157B2 (ja) * 2006-12-25 2013-07-17 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5248012B2 (ja) * 2006-12-25 2013-07-31 東レ・ダウコーニング株式会社 硬化性シリコーン組成物

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JP4931366B2 (ja) 2012-05-16
EP1874870A1 (en) 2008-01-09
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JP2006306954A (ja) 2006-11-09
ATE410484T1 (de) 2008-10-15
KR20070122512A (ko) 2007-12-31
EP1874870B1 (en) 2008-10-08
US20090203837A1 (en) 2009-08-13
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DE602006003085D1 (de) 2008-11-20
WO2006118335A1 (en) 2006-11-09

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