JP5238157B2 - 硬化性シリコーン組成物および電子部品 - Google Patents
硬化性シリコーン組成物および電子部品 Download PDFInfo
- Publication number
- JP5238157B2 JP5238157B2 JP2006346865A JP2006346865A JP5238157B2 JP 5238157 B2 JP5238157 B2 JP 5238157B2 JP 2006346865 A JP2006346865 A JP 2006346865A JP 2006346865 A JP2006346865 A JP 2006346865A JP 5238157 B2 JP5238157 B2 JP 5238157B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- component
- curable silicone
- silicone composition
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 99
- 229920001296 polysiloxane Polymers 0.000 title claims abstract description 70
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 24
- 239000003822 epoxy resin Substances 0.000 claims abstract description 23
- 239000004593 Epoxy Substances 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 125000003700 epoxy group Chemical group 0.000 claims description 26
- 125000000962 organic group Chemical group 0.000 claims description 26
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 24
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 12
- 150000001412 amines Chemical class 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 125000005375 organosiloxane group Chemical group 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 239000011231 conductive filler Substances 0.000 claims description 2
- -1 phenylpropiyl Chemical group 0.000 description 68
- 239000002245 particle Substances 0.000 description 27
- IISBACLAFKSPIT-UHFFFAOYSA-N Bisphenol A Natural products C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 14
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 125000000217 alkyl group Chemical group 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 10
- 238000002156 mixing Methods 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000002775 capsule Substances 0.000 description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 239000003921 oil Substances 0.000 description 7
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 6
- 239000000835 fiber Substances 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 125000002947 alkylene group Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000006482 condensation reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 3
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 3
- 125000005417 glycidoxyalkyl group Chemical group 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 3
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 3
- 239000005054 phenyltrichlorosilane Substances 0.000 description 3
- 238000004382 potting Methods 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 125000003944 tolyl group Chemical group 0.000 description 3
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 3
- 125000005023 xylyl group Chemical group 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- AHIPJALLQVEEQF-UHFFFAOYSA-N C(C1OC1)N(CC1OC1)c(cc1)ccc1OCC1OC1 Chemical compound C(C1OC1)N(CC1OC1)c(cc1)ccc1OCC1OC1 AHIPJALLQVEEQF-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- NCJUKYSFYPSPPR-UHFFFAOYSA-N Cc1ccccc1[O]#C Chemical compound Cc1ccccc1[O]#C NCJUKYSFYPSPPR-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 229910052570 clay Inorganic materials 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 238000006459 hydrosilylation reaction Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 125000004344 phenylpropyl group Chemical group 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 125000005372 silanol group Chemical group 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- XYDAPYXIQXFNJD-UHFFFAOYSA-N C[N](N)(N)O[N](N)(OC[N](N)(N)N)O[N](N)(N)N Chemical compound C[N](N)(N)O[N](N)(OC[N](N)(N)N)O[N](N)(N)N XYDAPYXIQXFNJD-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229920001875 Ebonite Polymers 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 125000002433 cyclopentenyl group Chemical group C1(=CCCC1)* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical group CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- MNFGEHQPOWJJBH-UHFFFAOYSA-N diethoxy-methyl-phenylsilane Chemical compound CCO[Si](C)(OCC)C1=CC=CC=C1 MNFGEHQPOWJJBH-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- BVURNMLGDQYNAF-UHFFFAOYSA-N dimethyl(1-phenylethyl)amine Chemical compound CN(C)C(C)C1=CC=CC=C1 BVURNMLGDQYNAF-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical group C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- MDCWDBMBZLORER-UHFFFAOYSA-N triphenyl borate Chemical compound C=1C=CC=CC=1OB(OC=1C=CC=CC=1)OC1=CC=CC=C1 MDCWDBMBZLORER-UHFFFAOYSA-N 0.000 description 1
- IUURMAINMLIZMX-UHFFFAOYSA-N tris(2-nonylphenyl)phosphane Chemical compound CCCCCCCCCC1=CC=CC=C1P(C=1C(=CC=CC=1)CCCCCCCCC)C1=CC=CC=C1CCCCCCCCC IUURMAINMLIZMX-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/15—Heterocyclic compounds having oxygen in the ring
- C08K5/151—Heterocyclic compounds having oxygen in the ring having one oxygen atom in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Details Of Resistors (AREA)
Description
(A)(A1)平均単位式:
(R1 3SiO1/2)a(R2 2SiO2/2)b(R3SiO3/2)c
{式中、R1、R2、およびR3は同じか、または異なる、置換もしくは非置換の一価炭化水素基またはエポキシ基含有一価有機基(但し、R3の20モル%以上はアリール基)であり、a、b、およびcはそれぞれ、0≦a≦0.8、0≦b≦0.8、0.2≦c≦0.9、かつa+b+c=1を満たす数である。}
で表され、一分子中に少なくとも2個の前記エポキシ基含有一価有機基を有するオルガノポリシロキサンおよび/または(A2)一般式:
A−R5−(R4 2SiO)mR4 2Si−R5−A
{式中、R4は脂肪族不飽和結合を有さない置換もしくは非置換の一価炭化水素基であり、R5は二価有機基であり、Aは平均単位式:
(XR4 2SiO1/2)d(SiO4/2)e
(式中、R4は前記と同じであり、Xは単結合、水素原子、前記R4で表される基、エポキシ基含有一価有機基、またはアルコキシシリルアルキル基であり、但し、一分子中、少なくとも1個のXは単結合であり、少なくとも2個のXはエポキシ基含有一価有機基であり、dは正数であり、eは正数であり、d/eは0.2〜4の数である。)
で表されるシロキサン残基であり、mは1以上の整数である。}
で表されるジオルガノシロキサン、
(B)エポキシ樹脂用硬化剤、
(C)一般式:
で表されるエポキシ化合物
から少なくともなる。
(A)成分は本組成物の主剤であり、(A1)平均単位式:
(R1 3SiO1/2)a(R2 2SiO2/2)b(R3SiO3/2)c
で表されるオルガノポリシロキサンおよび/または(A2)一般式:
A−R5−(R4 2SiO)mR4 2Si−R5−A
で表されるジオルガノシロキサンからなる。
[G(CH3)2SiO1/2]a[C6H5SiO3/2]c
[E(CH3)2SiO1/2]a[C6H5SiO3/2]c
[G(CH3)2SiO1/2]a[(CH3)2SiO2/2]b[C6H5SiO3/2]c
[E(CH3)2SiO1/2]a[(CH3)2SiO2/2]b[C6H5SiO3/2]c
[GCH3SiO2/2]b[C6H5SiO3/2]c
[ECH3SiO2/2]b[C6H5SiO3/2]c
[G(CH3)2SiO1/2]a[C6H5SiO3/2]c'[CH3SiO3/2]c"
[E(CH3)2SiO1/2]a[C6H5SiO3/2]c'[CH3SiO3/2]c"
[C6H5SiO3/2]c'[GSiO3/2]c"
[C6H5SiO3/2]c'[ESiO3/2]c"
(XR4 2SiO1/2)d(SiO4/2)e
で表されるシロキサン残基である。式中、R4は脂肪族不飽和結合を有さない置換もしくは非置換の一価炭化水素基であり、前記と同様の基が例示され、好ましくは、アルキル基であり、特に好ましくは、メチル基である。また、式中、Xは単結合、水素原子、前記R4で表される基、エポキシ基含有一価有機基、またはアルコキシシリルアルキル基であり、このR4で表される基としては、前記と同様の基が例示され、エポキシ基含有一価有機基としては、前記R1、R2、あるいはR3と同様のエポキシ基含有一価有機基が例示され、アルコキシシリルアルキル基としては、トリメトキシシリルエチル基、トリメトキシシリルプロピル基、ジメトキシメチルシリルプロピル基、メトキシジメチルシリルプロピル基、トリエトキシシリルエチル基、トリプロポキシシリルプロピル基が例示される。但し、一分子中、少なくとも1個のXは単結合であり、この単結合を介して上記ジオルガノシロキサン中のR5に結合している。また、一分子中の少なくとも1個のXはエポキシ基含有一価有機基であり、好ましくは、グリシドキシアルキル基であり、特に好ましくは、3−グリシドキシプロピル基である。また、式中、dは正数であり、eは正数であり、d/eは0.2〜4の数である。
R6 3SiO(R6 2SiO)nSiR6 3
で表されるオルガノシロキサンであることが好ましい。上式中、R6は同じか、または異なる、置換もしくは非置換の一価炭化水素基またはフェノール性水酸基含有一価有機基である。この一価炭化水素基としては、前記と同様の基が例示され、好ましくは、アルキル基、アリール基であり、特に好ましくは、メチル基、フェニル基である。また、フェノール性水酸基含有有機基としては、次のような基が例示される。なお、式中のR7は二価有機基であり、具体的には、エチレン基、メチルエチレン基、プロピレン基、ブチレン基、ペンチレン基、ヘキシレン基等のアルキレン基;エチレンオキシエチレン基、エチレンオキシプロピレン基、エチレンオキシブチレン基、プロピレンオキシプロピレン基等のアルキレンオキシアルキレン基が例示され、好ましくはアルキレン基であり、特に好ましくはプロピレン基である。
本発明の電子部品は、上記組成物の硬化物により封止もしくは接着されてなることを特徴とする。この電子部品としては、ダイオード、トランジスタ、サイリスタ、モノリシックIC、ハイブリッドIC、LSI、VLSIが例示される。
E型粘度計(TOKIMEC社製のDIGITAL VISCOMETER DV-U-E II型)を用いて、25℃、回転数2.5rpmの条件で測定した。
10mm×10mm角のシリコンチップをアルミナパネルに厚さ50μmの硬化性シリコーン組成物で貼りあわせ、次いで、150℃で1時間加熱することにより硬化性シリコーン組成物を硬化させてテストピースを作製した。このテストピースをボンドテスター(西進商事社製のMODEL−SS−100KP)により、25℃、剥離速度50mm/分における剥離強度(kgf/cm2)を測定した。
硬化性シリコーン組成物を脱泡後、幅10mm、長さ50mm、深さ2mmのキャビティを有する金型に充填し、150℃、2.5MPaの条件で60分間プレス硬化させた後、180℃のオーブン中で2時間2次加熱して硬化物の試験片を作製した。この試験片をARES粘弾性測定装置(Reometric Scientific社製のRDA700)を使用し、ねじれ0.05%、振動数1Hzの条件で、25℃における複素弾性率を測定した。
すりガラス板上に硬化性シリコーン組成物0.2gを滴下し、25℃で48時間放置後の硬化性シリコーン組成物が形成する直径(L0)とブリードしたオイルが形成する直径(L1)から、式:
100×(L1−L0)/L0
の値によりブリード性を評価した。
平均単位式:
平均単位式:
平均単位式:
平均単位式:
(CH3)3SiO[(CH3)2SiO]25Si(CH3) 2 −Z
(式中、Zは、式:
平均単位式:
(CH3)3SiO[(CH3)2SiO]25Si(CH3) 2 −Z
(式中、Zは、式:
平均式:
X−CH2CH2(CH3)2SiO[(CH3)2SiO]162Si(CH3)2CH2CH2−X
{式中、Xは、平均単位式:
[Y(CH3)2SiO1/2]1.6(SiO4/2)1.0
(式中、Yは単結合、トリメトキシシリルプロピル基、および3−グリシドキシプロピル基からなり、一分子中、1個のYは単結合であり、残りのYはトリメトキシシリルプロピル基、および3−グリシドキシプロピル基からなり、そのモル比はほぼ1:4である。)で表されるオルガノポリシロキサン残基である。}
で表されるジメチルポリシロキサン(質量平均分子量=51,000、粘度=12,000mPa・s)3.3質量部、平均単位式:
2 基板
3 ボールグリッド
4 ヒートスプレッダー
5 接着材
6 放熱材
7 放熱板
8 放熱材
Claims (15)
- (A)(A1)平均単位式:
(R1 3SiO1/2)a(R2 2SiO2/2)b(R3SiO3/2)c
{式中、R1、R2、およびR3は同じか、または異なる、置換もしくは非置換の一価炭化水素基またはエポキシ基含有一価有機基(但し、R3の20モル%以上はアリール基)であり、a、b、およびcはそれぞれ、0≦a≦0.8、0≦b≦0.8、0.2≦c≦0.9、かつa+b+c=1を満たす数である。}
で表され、一分子中に少なくとも2個の前記エポキシ基含有一価有機基を有するオルガノポリシロキサンおよび/または(A2)一般式:
A−R5−(R4 2SiO)mR4 2Si−R5−A
{式中、R4は脂肪族不飽和結合を有さない置換もしくは非置換の一価炭化水素基であり、R5は二価有機基であり、Aは平均単位式:
(XR4 2SiO1/2)d(SiO4/2)e
(式中、R4は前記と同じであり、Xは単結合、水素原子、前記R4で表される基、エポキシ基含有一価有機基、またはアルコキシシリルアルキル基であり、但し、一分子中、少なくとも1個のXは単結合であり、少なくとも2個のXはエポキシ基含有一価有機基であり、dは正数であり、eは正数であり、d/eは0.2〜4の数である。)
で表されるシロキサン残基であり、mは1以上の整数である。}
で表されるジオルガノシロキサン、
(B)エポキシ樹脂用硬化剤、
(C)一般式:
で表されるエポキシ化合物
から少なくともなる硬化性シリコーン組成物。 - (B)成分がフェノール性水酸基を有する化合物である、請求項1記載の硬化性シリコーン組成物。
- (B)成分が、フェノール性水酸基を一分子中に少なくとも2個有するオルガノシロキサンである、請求項2記載の硬化性シリコーン組成物。
- (B)成分が、一般式:
R6 3SiO(R6 2SiO)nSiR6 3
{式中、R6は置換もしくは非置換の一価炭化水素基またはフェノール性水酸基含有一価有機基(但し、一分子中、少なくとも2個のR6は前記フェノール性水酸基含有一価有機基)であり、nは0〜1,000の整数である。}
で表されるオルガノシロキサンである、請求項3記載の硬化性シリコーン組成物。 - (B)成分の含有量が、(A)成分100質量部に対して0.1〜500質量部である、請求項1記載の硬化性シリコーン組成物。
- (C)成分の含有量が、硬化性シリコーン組成物中の0.01〜50質量%である、請求項1記載の硬化性シリコーン組成物。
- さらに、(D)硬化促進剤を含有する、請求項1記載の硬化性シリコーン組成物。
- (D)成分がカプセル型アミン系硬化促進剤である、請求項7記載の硬化性シリコーン組成物。
- (D)成分の含有量が、(A)成分100質量部に対して50質量部以下である、請求項7記載の硬化性シリコーン組成物。
- さらに、(E)充填剤を含有する、請求項1記載の硬化性シリコーン組成物。
- (E)成分の含有量が、(A)成分100質量部に対して5,000質量部以下である、請求項10記載の硬化性シリコーン組成物。
- (E)成分が熱伝導性充填剤である、請求項10記載の硬化性シリコーン組成物。
- さらに、(F)有機エポキシ化合物を含有する、請求項1記載の硬化性シリコーン組成物。
- (F)成分の含有量が、(A)成分100質量部に対して500質量部以下である、請求項13記載の硬化性シリコーン組成物。
- 請求項1乃至14のいずれか1項に記載の硬化性シリコーン組成物の硬化物により封止もしくは接着されている電子部品。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006346865A JP5238157B2 (ja) | 2006-12-25 | 2006-12-25 | 硬化性シリコーン組成物および電子部品 |
TW096146566A TWI426106B (zh) | 2006-12-25 | 2007-12-06 | 可固化之聚矽氧組合物及電子組件 |
EP07851014A EP2099867B1 (en) | 2006-12-25 | 2007-12-14 | Curable silicone composition and electronic component |
KR1020097013185A KR101410337B1 (ko) | 2006-12-25 | 2007-12-14 | 경화성 실리콘 조성물 및 전자 부품 |
MYPI20092673A MY148111A (en) | 2006-12-25 | 2007-12-14 | Curable silicone composition and electronic component |
DE602007006345T DE602007006345D1 (de) | 2006-12-25 | 2007-12-14 | Härtbare silikonzusammensetzung und elektronikbauteil |
PCT/JP2007/074607 WO2008078663A1 (en) | 2006-12-25 | 2007-12-14 | Curable silicone composition and electronic component |
US12/520,899 US7994246B2 (en) | 2006-12-25 | 2007-12-14 | Curable silicone composition and electronic component |
CN2007800469756A CN101563425B (zh) | 2006-12-25 | 2007-12-14 | 可固化的硅氧烷组合物和电子组件 |
AT07851014T ATE466903T1 (de) | 2006-12-25 | 2007-12-14 | Härtbare silikonzusammensetzung und elektronikbauteil |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006346865A JP5238157B2 (ja) | 2006-12-25 | 2006-12-25 | 硬化性シリコーン組成物および電子部品 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008156474A JP2008156474A (ja) | 2008-07-10 |
JP2008156474A5 JP2008156474A5 (ja) | 2011-02-17 |
JP5238157B2 true JP5238157B2 (ja) | 2013-07-17 |
Family
ID=39135290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006346865A Expired - Fee Related JP5238157B2 (ja) | 2006-12-25 | 2006-12-25 | 硬化性シリコーン組成物および電子部品 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7994246B2 (ja) |
EP (1) | EP2099867B1 (ja) |
JP (1) | JP5238157B2 (ja) |
KR (1) | KR101410337B1 (ja) |
CN (1) | CN101563425B (ja) |
AT (1) | ATE466903T1 (ja) |
DE (1) | DE602007006345D1 (ja) |
MY (1) | MY148111A (ja) |
TW (1) | TWI426106B (ja) |
WO (1) | WO2008078663A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4931366B2 (ja) * | 2005-04-27 | 2012-05-16 | 東レ・ダウコーニング株式会社 | 硬化性シリコーン組成物および電子部品 |
JP5207591B2 (ja) * | 2006-02-23 | 2013-06-12 | 東レ・ダウコーニング株式会社 | 半導体装置の製造方法および半導体装置 |
JP5285846B2 (ja) * | 2006-09-11 | 2013-09-11 | 東レ・ダウコーニング株式会社 | 硬化性シリコーン組成物および電子部品 |
JP5547369B2 (ja) * | 2007-09-28 | 2014-07-09 | 東レ・ダウコーニング株式会社 | 硬化性液状エポキシ樹脂組成物およびその硬化物 |
KR101195674B1 (ko) * | 2009-01-29 | 2012-10-30 | 야마하 가부시키가이샤 | 열교환 유닛 |
KR101863884B1 (ko) * | 2010-12-27 | 2018-06-01 | 다우 코닝 도레이 캄파니 리미티드 | 경화성 에폭시 수지 조성물 |
KR101518104B1 (ko) | 2011-06-17 | 2015-05-06 | 주식회사 엘지화학 | 경화성 조성물 |
WO2014088370A1 (ko) | 2012-12-07 | 2014-06-12 | 제일모직 주식회사 | 광학기기용 경화형 폴리실록산 조성물, 봉지재 및 광학기기 |
KR101556274B1 (ko) | 2012-12-28 | 2015-09-30 | 제일모직 주식회사 | 봉지재 조성물, 봉지재 및 전자 소자 |
US20180016475A1 (en) * | 2015-01-21 | 2018-01-18 | Shin-Etsu Chemical Co., Ltd. | Room temperature-curable organopolysiloxane composition |
US9659844B2 (en) * | 2015-08-31 | 2017-05-23 | Texas Instruments Incorporated | Semiconductor die substrate with integral heat sink |
TW202132467A (zh) * | 2019-12-18 | 2021-09-01 | 美商陶氏有機矽公司 | 可固化聚矽氧組成物及其固化產物 |
JP7321081B2 (ja) * | 2019-12-26 | 2023-08-04 | 株式会社藤商事 | 遊技機 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3251655B2 (ja) | 1992-08-05 | 2002-01-28 | 東レ・ダウコーニング・シリコーン株式会社 | ジオルガノポリシロキサンおよびその製造方法 |
EP1094087B1 (en) * | 1999-03-11 | 2004-09-08 | Toray Industries, Inc. | Epoxy resin composition, epoxy resin composition for fiber-reinforced composite, and fiber-reinforced composite containing the same |
US6512031B1 (en) * | 1999-04-15 | 2003-01-28 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin composition, laminate film using the same, and semiconductor device |
JP3796648B2 (ja) | 1999-04-15 | 2006-07-12 | 信越化学工業株式会社 | エポキシ樹脂組成物並びにこのエポキシ樹脂組成物を用いた積層フィルム及び半導体装置 |
TWI345576B (en) | 2003-11-07 | 2011-07-21 | Dow Corning Toray Silicone | Curable silicone composition and cured product thereof |
JP2005146104A (ja) * | 2003-11-14 | 2005-06-09 | Shin Etsu Chem Co Ltd | 液状エポキシ樹脂組成物及び半導体装置 |
JP5166677B2 (ja) * | 2005-03-15 | 2013-03-21 | 東レ・ダウコーニング株式会社 | 硬化性シリコーン組成物および電子部品 |
JP2006316250A (ja) * | 2005-04-12 | 2006-11-24 | Shin Etsu Chem Co Ltd | 液状エポキシ樹脂組成物及び半導体装置 |
JP5004433B2 (ja) | 2005-04-27 | 2012-08-22 | 東レ・ダウコーニング株式会社 | 硬化性シリコーン組成物およびその硬化物 |
JP4931366B2 (ja) * | 2005-04-27 | 2012-05-16 | 東レ・ダウコーニング株式会社 | 硬化性シリコーン組成物および電子部品 |
JP4017645B2 (ja) * | 2005-12-22 | 2007-12-05 | 横浜ゴム株式会社 | 湿気硬化性樹脂組成物 |
-
2006
- 2006-12-25 JP JP2006346865A patent/JP5238157B2/ja not_active Expired - Fee Related
-
2007
- 2007-12-06 TW TW096146566A patent/TWI426106B/zh not_active IP Right Cessation
- 2007-12-14 DE DE602007006345T patent/DE602007006345D1/de active Active
- 2007-12-14 AT AT07851014T patent/ATE466903T1/de not_active IP Right Cessation
- 2007-12-14 US US12/520,899 patent/US7994246B2/en not_active Expired - Fee Related
- 2007-12-14 KR KR1020097013185A patent/KR101410337B1/ko active IP Right Grant
- 2007-12-14 CN CN2007800469756A patent/CN101563425B/zh not_active Expired - Fee Related
- 2007-12-14 MY MYPI20092673A patent/MY148111A/en unknown
- 2007-12-14 EP EP07851014A patent/EP2099867B1/en not_active Not-in-force
- 2007-12-14 WO PCT/JP2007/074607 patent/WO2008078663A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US7994246B2 (en) | 2011-08-09 |
KR101410337B1 (ko) | 2014-06-23 |
MY148111A (en) | 2013-02-28 |
WO2008078663A1 (en) | 2008-07-03 |
JP2008156474A (ja) | 2008-07-10 |
KR20090099060A (ko) | 2009-09-21 |
DE602007006345D1 (de) | 2010-06-17 |
US20100063185A1 (en) | 2010-03-11 |
EP2099867B1 (en) | 2010-05-05 |
TW200835749A (en) | 2008-09-01 |
EP2099867A1 (en) | 2009-09-16 |
CN101563425A (zh) | 2009-10-21 |
TWI426106B (zh) | 2014-02-11 |
ATE466903T1 (de) | 2010-05-15 |
CN101563425B (zh) | 2012-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5238157B2 (ja) | 硬化性シリコーン組成物および電子部品 | |
JP5285846B2 (ja) | 硬化性シリコーン組成物および電子部品 | |
JP5166677B2 (ja) | 硬化性シリコーン組成物および電子部品 | |
JP5248012B2 (ja) | 硬化性シリコーン組成物 | |
JP4931366B2 (ja) | 硬化性シリコーン組成物および電子部品 | |
JP5422109B2 (ja) | 硬化性シリコーン組成物およびその硬化物 | |
JP5004433B2 (ja) | 硬化性シリコーン組成物およびその硬化物 | |
JP4799848B2 (ja) | 硬化性シリコーン組成物およびその硬化物 | |
TWI432520B (zh) | 可固化之聚矽氧組合物及其固化體 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091208 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121106 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130326 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130401 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5238157 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160405 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |