KR101132076B1 - 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스 - Google Patents

나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스 Download PDF

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KR101132076B1
KR101132076B1 KR1020067002377A KR20067002377A KR101132076B1 KR 101132076 B1 KR101132076 B1 KR 101132076B1 KR 1020067002377 A KR1020067002377 A KR 1020067002377A KR 20067002377 A KR20067002377 A KR 20067002377A KR 101132076 B1 KR101132076 B1 KR 101132076B1
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nanowire
nanowires
composite
substrate
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KR20060087500A (ko
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미하이 버레티
지안 첸
캘빈 코우
춘밍 니우
야오링 팬
제이. 왈래스 패스
린다 티. 로마노
데이비드 스텀보
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나노시스, 인크.
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    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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    • H10H20/80—Constructional details
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    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
KR1020067002377A 2003-08-04 2004-08-04 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스 Expired - Lifetime KR101132076B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49197903P 2003-08-04 2003-08-04
US60/491,979 2003-08-04
PCT/US2004/025064 WO2005017962A2 (en) 2003-08-04 2004-08-04 System and process for producing nanowire composites and electronic substrates therefrom

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KR20060087500A KR20060087500A (ko) 2006-08-02
KR101132076B1 true KR101132076B1 (ko) 2012-04-02

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KR1020067002377A Expired - Lifetime KR101132076B1 (ko) 2003-08-04 2004-08-04 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스

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US (4) US7091120B2 (enExample)
EP (1) EP1652218A2 (enExample)
JP (1) JP2007501525A (enExample)
KR (1) KR101132076B1 (enExample)
CN (1) CN1863954B (enExample)
AU (1) AU2004265938B2 (enExample)
CA (1) CA2532991A1 (enExample)
WO (1) WO2005017962A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20160014219A (ko) * 2014-07-29 2016-02-11 한국세라믹기술원 폴리머 매트릭스 내 금속 나노와이어의 3차원 네트워크를 이용한 촉감센서 및 그 제조방법

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