CN1863954B - 制备纳米线复合体的系统和方法及由此得到的电子衬底 - Google Patents
制备纳米线复合体的系统和方法及由此得到的电子衬底 Download PDFInfo
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- CN1863954B CN1863954B CN200480028982XA CN200480028982A CN1863954B CN 1863954 B CN1863954 B CN 1863954B CN 200480028982X A CN200480028982X A CN 200480028982XA CN 200480028982 A CN200480028982 A CN 200480028982A CN 1863954 B CN1863954 B CN 1863954B
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Abstract
Description
Claims (88)
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Families Citing this family (219)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8958917B2 (en) | 1998-12-17 | 2015-02-17 | Hach Company | Method and system for remote monitoring of fluid quality and treatment |
US9056783B2 (en) | 1998-12-17 | 2015-06-16 | Hach Company | System for monitoring discharges into a waste water collection system |
US7454295B2 (en) | 1998-12-17 | 2008-11-18 | The Watereye Corporation | Anti-terrorism water quality monitoring system |
US20060175601A1 (en) * | 2000-08-22 | 2006-08-10 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
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US6872645B2 (en) * | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
US8294025B2 (en) * | 2002-06-08 | 2012-10-23 | Solarity, Llc | Lateral collection photovoltaics |
US6864162B2 (en) * | 2002-08-23 | 2005-03-08 | Samsung Electronics Co., Ltd. | Article comprising gated field emission structures with centralized nanowires and method for making the same |
US8920619B2 (en) | 2003-03-19 | 2014-12-30 | Hach Company | Carbon nanotube sensor |
US7041530B2 (en) * | 2003-06-12 | 2006-05-09 | Matsushita Electric Industrial Co., Ltd. | Method of production of nano particle dispersed composite material |
US7118941B2 (en) * | 2003-06-25 | 2006-10-10 | Intel Corporation | Method of fabricating a composite carbon nanotube thermal interface device |
AU2004265938B2 (en) | 2003-08-04 | 2009-07-02 | Nanosys, Inc. | System and process for producing nanowire composites and electronic substrates therefrom |
US7038299B2 (en) * | 2003-12-11 | 2006-05-02 | International Business Machines Corporation | Selective synthesis of semiconducting carbon nanotubes |
US7208094B2 (en) * | 2003-12-17 | 2007-04-24 | Hewlett-Packard Development Company, L.P. | Methods of bridging lateral nanowires and device using same |
US7112525B1 (en) * | 2003-12-22 | 2006-09-26 | University Of South Florida | Method for the assembly of nanowire interconnects |
US20090227107A9 (en) * | 2004-02-13 | 2009-09-10 | President And Fellows Of Havard College | Nanostructures Containing Metal Semiconductor Compounds |
US7595528B2 (en) | 2004-03-10 | 2009-09-29 | Nanosys, Inc. | Nano-enabled memory devices and anisotropic charge carrying arrays |
EP1723676A4 (en) | 2004-03-10 | 2009-04-15 | Nanosys Inc | MEMORY DEVICES WITH NANOCAPACITIES AND ANISOTROPIC LOADED NETWORKS |
EP1738378A4 (en) | 2004-03-18 | 2010-05-05 | Nanosys Inc | NANOFIBRE SURFACE BASED CAPACITORS |
EP1742893B1 (en) | 2004-04-27 | 2012-10-10 | The Board Of Trustees Of The University Of Illinois | Composite patterning devices for soft lithography |
KR20050104839A (ko) * | 2004-04-29 | 2005-11-03 | 삼성에스디아이 주식회사 | 전자 방출원 제조 방법, 전자 방출원 및 상기 전자방출원을 구비하는 전자 방출 소자 |
US7785922B2 (en) | 2004-04-30 | 2010-08-31 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
CN103633099B (zh) | 2004-06-04 | 2016-09-28 | 伊利诺伊大学评议会 | 可拉伸半导体元件、可拉伸电路及其制造方法 |
US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
US7943491B2 (en) | 2004-06-04 | 2011-05-17 | The Board Of Trustees Of The University Of Illinois | Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp |
US8217381B2 (en) | 2004-06-04 | 2012-07-10 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
US7521292B2 (en) | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
US8088483B1 (en) | 2004-06-08 | 2012-01-03 | Nanosys, Inc. | Process for group 10 metal nanostructure synthesis and compositions made using same |
TWI406890B (zh) | 2004-06-08 | 2013-09-01 | Sandisk Corp | 奈米結構之沉積後包封:併入該包封體之組成物、裝置及系統 |
US7968273B2 (en) | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
WO2005122235A2 (en) | 2004-06-08 | 2005-12-22 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US20070264623A1 (en) * | 2004-06-15 | 2007-11-15 | President And Fellows Of Harvard College | Nanosensors |
US8558311B2 (en) * | 2004-09-16 | 2013-10-15 | Nanosys, Inc. | Dielectrics using substantially longitudinally oriented insulated conductive wires |
US8089152B2 (en) * | 2004-09-16 | 2012-01-03 | Nanosys, Inc. | Continuously variable graded artificial dielectrics using nanostructures |
US7365395B2 (en) * | 2004-09-16 | 2008-04-29 | Nanosys, Inc. | Artificial dielectrics using nanostructures |
US20060060839A1 (en) * | 2004-09-22 | 2006-03-23 | Chandross Edwin A | Organic semiconductor composition |
EP1805823A2 (en) * | 2004-10-12 | 2007-07-11 | Nanosys, Inc. | Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires |
US7560366B1 (en) | 2004-12-02 | 2009-07-14 | Nanosys, Inc. | Nanowire horizontal growth and substrate removal |
CN101124638A (zh) * | 2004-12-06 | 2008-02-13 | 哈佛大学 | 基于纳米尺度线的数据存储 |
US7939218B2 (en) | 2004-12-09 | 2011-05-10 | Nanosys, Inc. | Nanowire structures comprising carbon |
US8278011B2 (en) | 2004-12-09 | 2012-10-02 | Nanosys, Inc. | Nanostructured catalyst supports |
CN101707256B (zh) | 2004-12-09 | 2013-11-06 | 奈米系统股份有限公司 | 用于燃料电池的基于纳米线的膜电极组件 |
EP1874531A2 (en) * | 2005-04-26 | 2008-01-09 | Nanosys, Inc. | Paintable nanofiber coatings |
US7309621B2 (en) * | 2005-04-26 | 2007-12-18 | Sharp Laboratories Of America, Inc. | Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition |
US7230286B2 (en) | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
US20100227382A1 (en) * | 2005-05-25 | 2010-09-09 | President And Fellows Of Harvard College | Nanoscale sensors |
EP1941554A2 (en) * | 2005-06-02 | 2008-07-09 | Nanosys, Inc. | Light emitting nanowires for macroelectronics |
WO2006132659A2 (en) * | 2005-06-06 | 2006-12-14 | President And Fellows Of Harvard College | Nanowire heterostructures |
JP4856900B2 (ja) * | 2005-06-13 | 2012-01-18 | パナソニック株式会社 | 電界効果トランジスタの製造方法 |
AU2006258261A1 (en) * | 2005-06-16 | 2006-12-21 | Qunano Ab | Semiconductor nanowire transistor |
US20070004225A1 (en) * | 2005-06-30 | 2007-01-04 | Donghui Lu | Low-temperature catalyzed formation of segmented nanowire of dielectric material |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7989290B2 (en) | 2005-08-04 | 2011-08-02 | Micron Technology, Inc. | Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps |
US7575978B2 (en) * | 2005-08-04 | 2009-08-18 | Micron Technology, Inc. | Method for making conductive nanoparticle charge storage element |
CN102250506B (zh) | 2005-08-12 | 2014-07-09 | 凯博瑞奥斯技术公司 | 基于纳米线的透明导体 |
KR100691276B1 (ko) | 2005-08-25 | 2007-03-12 | 삼성전기주식회사 | 나노와이어 발광 소자 및 제조방법 |
KR100647699B1 (ko) * | 2005-08-30 | 2006-11-23 | 삼성에스디아이 주식회사 | 나노 반도체 시트, 상기 나노 반도체 시트의 제조방법,상기 나노 반도체 시트를 이용한 박막 트랜지스터의제조방법, 상기 나노 반도체 시트를 이용한 평판표시장치의 제조방법, 박막 트랜지스터, 및 평판 표시장치 |
WO2007038164A2 (en) * | 2005-09-23 | 2007-04-05 | Nanosys, Inc. | Methods for nanostructure doping |
JP2007123657A (ja) * | 2005-10-31 | 2007-05-17 | Nec Corp | 半導体装置及びその製造方法 |
WO2007062072A1 (en) * | 2005-11-21 | 2007-05-31 | University Of Florida Research Foundation, Inc. | Method for forming interpenetrating networks of distinct materials and devices therefrom |
AU2006318658B2 (en) * | 2005-11-21 | 2011-07-28 | Nanosys, Inc. | Nanowire structures comprising carbon |
KR100657973B1 (ko) * | 2005-12-02 | 2006-12-14 | 삼성에스디아이 주식회사 | 기계적 메모리 소자 및 그 제조방법 |
EP1796162A3 (en) | 2005-12-06 | 2010-06-02 | Canon Kabushiki Kaisha | Circuit element having capacitor and field effect transistor comprising nanowires |
US7906803B2 (en) * | 2005-12-06 | 2011-03-15 | Canon Kabushiki Kaisha | Nano-wire capacitor and circuit device therewith |
KR100661602B1 (ko) * | 2005-12-09 | 2006-12-26 | 삼성전기주식회사 | 수직 구조 질화갈륨계 led 소자의 제조방법 |
CA2624778A1 (en) | 2005-12-29 | 2007-11-22 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
US7741197B1 (en) | 2005-12-29 | 2010-06-22 | Nanosys, Inc. | Systems and methods for harvesting and reducing contamination in nanowires |
US20070200187A1 (en) * | 2006-02-28 | 2007-08-30 | Amlani Islamshah S | Nanowire device and method of making |
WO2007126412A2 (en) * | 2006-03-03 | 2007-11-08 | The Board Of Trustees Of The University Of Illinois | Methods of making spatially aligned nanotubes and nanotube arrays |
JP4574634B2 (ja) * | 2006-04-03 | 2010-11-04 | キヤノン株式会社 | シリコンワイヤを含み構成される物品の製造方法 |
KR101533455B1 (ko) | 2006-04-06 | 2015-07-03 | 삼성전자주식회사 | 나노와이어 복합체 및 그의 제조방법 |
JP2009537439A (ja) | 2006-05-19 | 2009-10-29 | マサチューセッツ・インスティテュート・オブ・テクノロジー | ナノチューブを含むナノ構造の生成のための連続処理 |
US8337979B2 (en) | 2006-05-19 | 2012-12-25 | Massachusetts Institute Of Technology | Nanostructure-reinforced composite articles and methods |
US7741647B2 (en) * | 2006-05-22 | 2010-06-22 | Hewlett-Packard Development Company | Utilizing nanowire for different applications |
WO2008051316A2 (en) | 2006-06-12 | 2008-05-02 | President And Fellows Of Harvard College | Nanosensors and related technologies |
GB0617460D0 (en) * | 2006-09-05 | 2006-10-18 | Airbus Uk Ltd | Method of manufacturing composite material |
US8058640B2 (en) | 2006-09-11 | 2011-11-15 | President And Fellows Of Harvard College | Branched nanoscale wires |
EP2064744A2 (en) * | 2006-09-19 | 2009-06-03 | QuNano AB | Assembly of nanoscaled field effect transistors |
GB2442768A (en) * | 2006-10-11 | 2008-04-16 | Sharp Kk | A method of encapsulating low dimensional structures |
KR101545219B1 (ko) * | 2006-10-12 | 2015-08-18 | 캄브리오스 테크놀로지즈 코포레이션 | 나노와이어 기반의 투명 도전체 및 그의 응용 |
US8018568B2 (en) * | 2006-10-12 | 2011-09-13 | Cambrios Technologies Corporation | Nanowire-based transparent conductors and applications thereof |
KR100792036B1 (ko) * | 2006-10-17 | 2008-01-04 | 한양대학교 산학협력단 | 유기 박막 트랜지스터 및 그 제조 방법 |
WO2008049015A2 (en) * | 2006-10-17 | 2008-04-24 | Purdue Research Foundation | Electrothermal interface material enhancer |
KR100836131B1 (ko) * | 2006-10-19 | 2008-06-09 | 삼성전기주식회사 | 나노와이어를 이용한 커패시터 및 그 제조방법 |
JP5009993B2 (ja) | 2006-11-09 | 2012-08-29 | ナノシス・インク. | ナノワイヤの配列方法および堆積方法 |
WO2008127314A1 (en) * | 2006-11-22 | 2008-10-23 | President And Fellows Of Harvard College | High-sensitivity nanoscale wire sensors |
US8686490B2 (en) * | 2006-12-20 | 2014-04-01 | Sandisk Corporation | Electron blocking layers for electronic devices |
US20080150004A1 (en) * | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
US20080150003A1 (en) * | 2006-12-20 | 2008-06-26 | Jian Chen | Electron blocking layers for electronic devices |
US7847341B2 (en) | 2006-12-20 | 2010-12-07 | Nanosys, Inc. | Electron blocking layers for electronic devices |
US20080150009A1 (en) * | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
US20080157354A1 (en) * | 2007-01-03 | 2008-07-03 | Sharp Laboratories Of America, Inc. | Multiple stacked nanostructure arrays and methods for making the same |
WO2008143635A1 (en) * | 2007-01-17 | 2008-11-27 | The Board Of Trustees Of The University Of Illinois | Optical systems fabricated by printing-based assembly |
WO2008094517A1 (en) * | 2007-01-30 | 2008-08-07 | Solasta, Inc. | Photovoltaic cell and method of making thereof |
KR20090120474A (ko) * | 2007-02-12 | 2009-11-24 | 솔라스타, 인코포레이티드 | 고온 캐리어 냉각이 감소된 광전지 셀 |
US8628746B2 (en) * | 2007-04-12 | 2014-01-14 | Raytheon Company | System and method for dispersing nanostructures in a composite material |
EP2477229B1 (en) | 2007-04-20 | 2021-06-23 | Cambrios Film Solutions Corporation | Composite transparent conductors and methods of forming the same |
US7892610B2 (en) * | 2007-05-07 | 2011-02-22 | Nanosys, Inc. | Method and system for printing aligned nanowires and other electrical devices |
JP5216237B2 (ja) * | 2007-05-16 | 2013-06-19 | パナソニック株式会社 | 半導体素子及びその製造方法 |
US8097922B1 (en) * | 2007-05-29 | 2012-01-17 | The Regents Of The University Of California | Nanometer-scale transistor architecture providing enhanced carrier mobility |
US8367506B2 (en) | 2007-06-04 | 2013-02-05 | Micron Technology, Inc. | High-k dielectrics with gold nano-particles |
EP2171763A2 (en) * | 2007-06-26 | 2010-04-07 | Solarity, Inc. | Lateral collection photovoltaics |
TW200919751A (en) * | 2007-07-03 | 2009-05-01 | Solasta Inc | Distributed coax photovoltaic device |
KR100904588B1 (ko) * | 2007-07-05 | 2009-06-25 | 삼성전자주식회사 | 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자 |
DE102007031600B4 (de) * | 2007-07-06 | 2015-10-15 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Array aus vertikalen UV-Leuchtemitterdioden und Verfahren zu seiner Herstellung |
KR100857542B1 (ko) | 2007-07-19 | 2008-09-08 | 삼성전자주식회사 | 탄소 나노튜브 발광소자 및 그 제조방법 |
EP2019313B1 (en) * | 2007-07-25 | 2015-09-16 | Stichting IMEC Nederland | Sensor device comprising elongated nanostructures, its use and manufacturing method |
US8491292B1 (en) | 2007-07-31 | 2013-07-23 | Raytheon Company | Aligning nanomaterial in a nanomaterial composite |
US8636972B1 (en) | 2007-07-31 | 2014-01-28 | Raytheon Company | Making a nanomaterial composite |
US8729381B2 (en) | 2007-08-21 | 2014-05-20 | The Regents Of The University Of California | Nanostructures having high performance thermoelectric properties |
JP2009057518A (ja) * | 2007-09-03 | 2009-03-19 | Institute Of Physical & Chemical Research | 異方性フィルムおよび異方性フィルムの製造方法 |
KR100945251B1 (ko) * | 2007-09-28 | 2010-03-03 | 한국과학기술원 | 형태 조절이 가능한 단결정 나노구조체 제작방법 및 단결정나노구조체 제작장치 |
US8919428B2 (en) * | 2007-10-17 | 2014-12-30 | Purdue Research Foundation | Methods for attaching carbon nanotubes to a carbon substrate |
KR101272012B1 (ko) | 2007-11-28 | 2013-06-07 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
KR101345432B1 (ko) * | 2007-12-13 | 2013-12-27 | 성균관대학교산학협력단 | 무촉매 단결정 실리콘 나노와이어의 제조방법, 그에 의해형성된 나노와이어 및 이를 포함하는 나노소자 |
US8273983B2 (en) * | 2007-12-21 | 2012-09-25 | Hewlett-Packard Development Company, L.P. | Photonic device and method of making same using nanowires |
US8603246B2 (en) * | 2008-01-30 | 2013-12-10 | Palo Alto Research Center Incorporated | Growth reactor systems and methods for low-temperature synthesis of nanowires |
US8283556B2 (en) | 2008-01-30 | 2012-10-09 | Hewlett-Packard Development Company, L.P. | Nanowire-based device and array with coaxial electrodes |
CN101960570A (zh) * | 2008-02-26 | 2011-01-26 | Nxp股份有限公司 | 制造半导体器件的方法和半导体器件 |
EP2963675A1 (en) | 2008-03-05 | 2016-01-06 | The Board of Trustees of The University of Illinois | Stretchable and foldable electronic devices |
FR2929267B1 (fr) * | 2008-03-27 | 2011-01-14 | Commissariat Energie Atomique | Procede de preparation de zno ou de znmgo dope de type p |
GB2459251A (en) * | 2008-04-01 | 2009-10-21 | Sharp Kk | Semiconductor nanowire devices |
GB2458907A (en) * | 2008-04-01 | 2009-10-07 | Sharp Kk | Device interconnects |
GB2458906A (en) * | 2008-04-01 | 2009-10-07 | Sharp Kk | Nanowire manufacture |
KR20100137566A (ko) * | 2008-04-15 | 2010-12-30 | 큐나노 에이비 | 나노와이어 랩 게이트 디바이스들 |
WO2009136906A1 (en) * | 2008-05-05 | 2009-11-12 | Hewlett-Packard Development Company, L.P. | Nanowire-based photodiode |
JP5347340B2 (ja) * | 2008-06-04 | 2013-11-20 | 株式会社豊田中央研究所 | 共鳴トンネルダイオードの製法 |
WO2010005707A1 (en) | 2008-06-16 | 2010-01-14 | The Board Of Trustees Of The University Of Illinois | Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates |
US7858506B2 (en) * | 2008-06-18 | 2010-12-28 | Micron Technology, Inc. | Diodes, and methods of forming diodes |
US20110253217A1 (en) * | 2008-09-30 | 2011-10-20 | The Regents Of The University Of California | Controlled Alignment in Polymeric Solar Cells |
US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
US9289132B2 (en) | 2008-10-07 | 2016-03-22 | Mc10, Inc. | Catheter balloon having stretchable integrated circuitry and sensor array |
US20100108132A1 (en) * | 2008-10-30 | 2010-05-06 | General Electric Company | Nano-devices and methods of manufacture thereof |
US9494615B2 (en) * | 2008-11-24 | 2016-11-15 | Massachusetts Institute Of Technology | Method of making and assembling capsulated nanostructures |
TWI397548B (zh) * | 2008-12-19 | 2013-06-01 | Hon Hai Prec Ind Co Ltd | 含有奈米線的複合粒子及其製備方法 |
US20110220171A1 (en) * | 2009-01-30 | 2011-09-15 | Mathai Sagi V | Photovoltaic Structure and Solar Cell and Method of Fabrication Employing Hidden Electrode |
US8541058B2 (en) * | 2009-03-06 | 2013-09-24 | Timothy S. Fisher | Palladium thiolate bonding of carbon nanotubes |
WO2010120297A1 (en) * | 2009-04-15 | 2010-10-21 | Hewlett-Packard Development Company, L.P | Nanowire sensor having a nanowire and electrically conductive film |
CN102484147B (zh) * | 2009-04-15 | 2015-11-25 | 索尔伏打电流公司 | 具有纳米线的多结光生伏打电池 |
KR101706915B1 (ko) | 2009-05-12 | 2017-02-15 | 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 | 변형가능 및 반투과 디스플레이를 위한 초박형, 미세구조 무기발광다이오드의 인쇄 어셈블리 |
ES2867474T3 (es) * | 2009-05-19 | 2021-10-20 | Oned Mat Inc | Materiales nanoestructurados para aplicaciones de batería |
WO2010138506A1 (en) | 2009-05-26 | 2010-12-02 | Nanosys, Inc. | Methods and systems for electric field deposition of nanowires and other devices |
US8623288B1 (en) | 2009-06-29 | 2014-01-07 | Nanosys, Inc. | Apparatus and methods for high density nanowire growth |
US8062568B2 (en) | 2009-08-27 | 2011-11-22 | Korea University Research And Business Foundation | Nano pattern writer |
US20110049473A1 (en) | 2009-08-28 | 2011-03-03 | International Business Machines Corporation | Film Wrapped NFET Nanowire |
US20120168713A1 (en) * | 2009-09-03 | 2012-07-05 | Korea Research Institute Of Standards And Science | Method for manufacturing a silicon nanowire array using a porous metal film |
WO2011038228A1 (en) | 2009-09-24 | 2011-03-31 | President And Fellows Of Harvard College | Bent nanowires and related probing of species |
US8759810B2 (en) * | 2009-09-25 | 2014-06-24 | The Trustees Of The University Of Pennsylvania | Phase change memory devices with relaxed stress |
US9723122B2 (en) | 2009-10-01 | 2017-08-01 | Mc10, Inc. | Protective cases with integrated electronics |
KR101734282B1 (ko) * | 2009-10-01 | 2017-05-12 | 경기대학교 산학협력단 | 면 광원 소자 |
KR20110041401A (ko) * | 2009-10-15 | 2011-04-21 | 샤프 가부시키가이샤 | 발광 장치 및 그 제조 방법 |
US8872214B2 (en) | 2009-10-19 | 2014-10-28 | Sharp Kabushiki Kaisha | Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device |
JP5014403B2 (ja) * | 2009-11-19 | 2012-08-29 | シャープ株式会社 | 棒状構造発光素子、発光装置、発光装置の製造方法、バックライト、照明装置および表示装置 |
KR101178468B1 (ko) * | 2009-10-19 | 2012-09-06 | 샤프 가부시키가이샤 | 봉형상 구조 발광 소자, 봉형상 구조 발광 소자의 제조 방법, 백라이트, 조명 장치 및 표시 장치 |
JP5094824B2 (ja) * | 2009-10-19 | 2012-12-12 | シャープ株式会社 | 棒状構造発光素子、バックライト、照明装置および表示装置 |
JP5014477B2 (ja) * | 2009-10-19 | 2012-08-29 | シャープ株式会社 | 棒状構造発光素子の製造方法および表示装置の製造方法 |
JP4897034B2 (ja) * | 2009-12-03 | 2012-03-14 | シャープ株式会社 | 棒状構造発光素子、発光装置、発光装置の製造方法、バックライト、照明装置および表示装置 |
JP2011119617A (ja) * | 2009-12-07 | 2011-06-16 | Sharp Corp | 棒状構造発光素子の製造方法 |
JP6046491B2 (ja) | 2009-12-16 | 2016-12-21 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | コンフォーマル電子機器を使用した生体内での電気生理学 |
US9936574B2 (en) | 2009-12-16 | 2018-04-03 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
US10441185B2 (en) | 2009-12-16 | 2019-10-15 | The Board Of Trustees Of The University Of Illinois | Flexible and stretchable electronic systems for epidermal electronics |
EP2513952A1 (en) | 2009-12-17 | 2012-10-24 | Merck Patent GmbH | Deposition of nanoparticles |
KR101732178B1 (ko) * | 2010-01-15 | 2017-05-04 | 삼성전자주식회사 | 나노 섬유-나노 와이어 복합체 및 그 제조방법 |
EP3409732A1 (en) * | 2010-02-05 | 2018-12-05 | CAM Holding Corporation | Photosensitive ink compositions and transparent conductors and method of using the same |
CN102892356B (zh) | 2010-03-17 | 2016-01-13 | 伊利诺伊大学评议会 | 基于生物可吸收基质的可植入生物医学装置 |
KR101701967B1 (ko) * | 2010-05-31 | 2017-02-03 | 도레이케미칼 주식회사 | 나노와이어를 포함하는 투명 도전체의 제조방법 |
US8680510B2 (en) * | 2010-06-28 | 2014-03-25 | International Business Machines Corporation | Method of forming compound semiconductor |
US9000660B2 (en) * | 2010-11-15 | 2015-04-07 | Laurence H. Cooke | Uses of hydrocarbon nanorings |
US9240328B2 (en) | 2010-11-19 | 2016-01-19 | Alphabet Energy, Inc. | Arrays of long nanostructures in semiconductor materials and methods thereof |
US8736011B2 (en) | 2010-12-03 | 2014-05-27 | Alphabet Energy, Inc. | Low thermal conductivity matrices with embedded nanostructures and methods thereof |
TWI441305B (zh) | 2010-12-21 | 2014-06-11 | Ind Tech Res Inst | 半導體裝置 |
US9442285B2 (en) | 2011-01-14 | 2016-09-13 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
US9765934B2 (en) | 2011-05-16 | 2017-09-19 | The Board Of Trustees Of The University Of Illinois | Thermally managed LED arrays assembled by printing |
JP2014523633A (ja) | 2011-05-27 | 2014-09-11 | エムシー10 インコーポレイテッド | 電子的、光学的、且つ/又は機械的装置及びシステム並びにこれらの装置及びシステムを製造する方法 |
US8934965B2 (en) | 2011-06-03 | 2015-01-13 | The Board Of Trustees Of The University Of Illinois | Conformable actively multiplexed high-density surface electrode array for brain interfacing |
EP2786644B1 (en) | 2011-12-01 | 2019-04-10 | The Board of Trustees of the University of Illionis | Transient devices designed to undergo programmable transformations |
US9051175B2 (en) | 2012-03-07 | 2015-06-09 | Alphabet Energy, Inc. | Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same |
EP2830492B1 (en) | 2012-03-30 | 2021-05-19 | The Board of Trustees of the University of Illinois | Appendage mountable electronic devices conformable to surfaces and method of making the same |
US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
JP2015532725A (ja) * | 2012-08-13 | 2015-11-12 | プレジデント アンド フェローズ オブ ハーバード カレッジ | 光学装置、光フィルタの製造方法、画像形成装置およびその製造方法 |
US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
US9082930B1 (en) | 2012-10-25 | 2015-07-14 | Alphabet Energy, Inc. | Nanostructured thermolectric elements and methods of making the same |
CN103854971B (zh) * | 2012-12-04 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | 纳米线的制造方法、纳米线场效应晶体管的制造方法 |
WO2014159927A2 (en) | 2013-03-14 | 2014-10-02 | Nanosys, Inc. | Method for solventless quantum dot exchange |
US20140374715A1 (en) * | 2013-06-21 | 2014-12-25 | Postech Academy – Industry Foundation | Method for fabricating organic electronic device having separate patterns using organic fiber, and organic electronic device having the organic fiber |
KR102235020B1 (ko) * | 2013-07-03 | 2021-04-02 | 루미리즈 홀딩 비.브이. | 금속화 층 아래에 스트레스-버퍼 층을 가지는 led |
US9691849B2 (en) | 2014-04-10 | 2017-06-27 | Alphabet Energy, Inc. | Ultra-long silicon nanostructures, and methods of forming and transferring the same |
DE102014107167B4 (de) * | 2014-05-21 | 2022-04-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Halbleiterbauelements mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen und strahlungsemittierendes Halbleiterbauelement mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen |
KR101635770B1 (ko) * | 2014-07-29 | 2016-07-04 | 한국세라믹기술원 | 폴리머 매트릭스 내 금속 나노와이어의 3차원 네트워크를 이용한 촉감센서 및 그 제조방법 |
DE102014018878B8 (de) * | 2014-12-17 | 2017-11-16 | Technische Universität Darmstadt | Federsensorelement |
CN105870183B (zh) * | 2015-01-19 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
BR112017025609A2 (pt) | 2015-06-01 | 2018-08-07 | The Board Of Trustees Of The University Of Illinois | sistemas eletrônicos miniaturizados com potência sem fio e capacidades de comunicação de campo próximo |
JP2018524566A (ja) | 2015-06-01 | 2018-08-30 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | 代替的uvセンシング手法 |
US10925543B2 (en) | 2015-11-11 | 2021-02-23 | The Board Of Trustees Of The University Of Illinois | Bioresorbable silicon electronics for transient implants |
FR3046243B1 (fr) * | 2015-12-24 | 2017-12-22 | Commissariat Energie Atomique | Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur |
BR112018072800A2 (pt) | 2016-05-31 | 2019-03-12 | Massachusetts Inst Technology | artigos compósitos compreendendo nanoestruturas alongadas não lineares e métodos associados |
WO2018092123A1 (en) | 2016-11-17 | 2018-05-24 | Orbotech Ltd. | Hybrid, multi-material 3d printing |
CN106825601B (zh) * | 2016-12-30 | 2019-03-29 | 西安交通大学青岛研究院 | 一种银纳米线的制备方法 |
US11257984B2 (en) | 2017-06-09 | 2022-02-22 | University Of Massachusetts | III-nitride down-conversion nanomaterial for white LEDs |
US20190055677A1 (en) * | 2017-08-17 | 2019-02-21 | Lintec Of America, Inc. | Selective infiltration of nanofiber yarns |
US20190085138A1 (en) | 2017-09-15 | 2019-03-21 | Massachusetts Institute Of Technology | Low-defect fabrication of composite materials |
KR102089637B1 (ko) * | 2017-09-26 | 2020-03-16 | 동우 화인켐 주식회사 | 금속 나노 와이어를 포함하는 투명 도전성 접착제 필름 및 그 제조방법 |
KR101997670B1 (ko) * | 2017-10-17 | 2019-07-09 | 한국과학기술연구원 | 기능성 물질층이 전사된 구조체 형성 방법 |
KR102028599B1 (ko) * | 2017-10-17 | 2019-10-04 | 한국과학기술연구원 | 3d 프린트 출력물에 기능성 물질층을 전사하는 방법 |
US11031657B2 (en) | 2017-11-28 | 2021-06-08 | Massachusetts Institute Of Technology | Separators comprising elongated nanostructures and associated devices and methods, including devices and methods for energy storage and/or use |
FR3079345B1 (fr) * | 2018-03-26 | 2020-02-21 | Soitec | Procede de fabrication d'un substrat pour dispositif radiofrequence |
JP7354153B2 (ja) | 2018-05-16 | 2023-10-02 | リンテック オブ アメリカ インク | ナノファイバー布帛 |
EP3844099A1 (en) * | 2018-08-29 | 2021-07-07 | Thales Solutions Asia Pte Ltd. | Nanostructure transfer method |
KR20210003991A (ko) | 2019-07-02 | 2021-01-13 | 삼성디스플레이 주식회사 | 발광 소자, 이의 제조 방법 및 표시 장치 |
RU197477U1 (ru) * | 2019-12-09 | 2020-04-30 | Федеральное государственное бюджетное учреждение высшего образования и науки "Санкт-Петербургский национальный исследовательский Академический университет имени Ж.И. Алферова Российской академии наук" (СПБАУ РАН им. Ж.И. Алферова) | Функциональный трехмерный компонент оптоэлектронного прибора |
CN113782674B (zh) * | 2020-06-09 | 2024-02-27 | 北京元芯碳基集成电路研究院 | 碳纳米管射频器件、制造方法及集成电路系统 |
CN114540786B (zh) * | 2022-02-17 | 2022-12-30 | 山西大学 | 一种抗反射复合材料及其制备方法和应用 |
CN114736620B (zh) * | 2022-06-15 | 2022-11-15 | 深圳市卓汉材料技术有限公司 | 屏蔽胶带、其制备方法及屏蔽结构 |
TWI814578B (zh) * | 2022-09-13 | 2023-09-01 | 國立中山大學 | 薄膜電晶體及其製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1230283A (zh) * | 1996-05-15 | 1999-09-29 | 海珀里昂催化国际有限公司 | 用于电化学电容器中的纳米级石墨纤维 |
US6297063B1 (en) * | 1999-10-25 | 2001-10-02 | Agere Systems Guardian Corp. | In-situ nano-interconnected circuit devices and method for making the same |
US6383923B1 (en) * | 1999-10-05 | 2002-05-07 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
CN1383418A (zh) * | 1998-09-18 | 2002-12-04 | 威廉马歇莱思大学 | 单壁碳质毫微管有助于其溶剂化的化学衍生化以及经衍生化毫微管的用途 |
US6741019B1 (en) * | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
Family Cites Families (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55125681A (en) | 1979-03-22 | 1980-09-27 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
US4625071A (en) | 1984-11-05 | 1986-11-25 | Chronar Corp. | Particulate semiconductors and devices |
US4752455A (en) * | 1986-05-27 | 1988-06-21 | Kms Fusion, Inc. | Pulsed laser microfabrication |
US5401587A (en) | 1990-03-27 | 1995-03-28 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Anisotropic nanophase composite material and method of producing same |
AU650878B2 (en) | 1990-04-17 | 1994-07-07 | Ecole Polytechnique Federale De Lausanne | Photovoltaic cells |
JP2866730B2 (ja) * | 1990-11-14 | 1999-03-08 | 日本電信電話株式会社 | 半導体回路の形成方法 |
JP3125332B2 (ja) | 1991-06-21 | 2001-01-15 | ソニー株式会社 | 量子ドットトンネル素子とそれを用いた情報処理装置及び情報処理方法 |
US5262357A (en) | 1991-11-22 | 1993-11-16 | The Regents Of The University Of California | Low temperature thin films formed from nanocrystal precursors |
WO1993010564A1 (en) | 1991-11-22 | 1993-05-27 | The Regents Of The University Of California | Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers |
US5505928A (en) | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
DE4207659A1 (de) | 1992-03-11 | 1993-09-16 | Abb Patent Gmbh | Verfahren zur herstellung einer photoelektrochemischen zelle sowie eine demgemaess hergestellte zelle |
JPH05308146A (ja) | 1992-05-01 | 1993-11-19 | Ricoh Co Ltd | 有機光起電力素子 |
IL102374A0 (en) | 1992-06-30 | 1993-01-14 | Yeda Res & Dev | Nanocrystalline cell |
US5331183A (en) | 1992-08-17 | 1994-07-19 | The Regents Of The University Of California | Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
GB9217811D0 (en) | 1992-08-21 | 1992-10-07 | Graetzel Michael | Organic compounds |
US5260957A (en) | 1992-10-29 | 1993-11-09 | The Charles Stark Draper Laboratory, Inc. | Quantum dot Laser |
US5293050A (en) | 1993-03-25 | 1994-03-08 | International Business Machines Corporation | Semiconductor quantum dot light emitting/detecting devices |
US6048616A (en) | 1993-04-21 | 2000-04-11 | Philips Electronics N.A. Corp. | Encapsulated quantum sized doped semiconductor particles and method of manufacturing same |
US5504323A (en) | 1993-12-07 | 1996-04-02 | The Regents Of The University Of California | Dual function conducting polymer diodes |
US5422489A (en) | 1994-01-24 | 1995-06-06 | Bhargava; Rameshwar N. | Light emitting device |
US5434878A (en) | 1994-03-18 | 1995-07-18 | Brown University Research Foundation | Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers |
US5537000A (en) | 1994-04-29 | 1996-07-16 | The Regents, University Of California | Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices |
EP0758337B1 (en) | 1994-05-02 | 1998-12-16 | Ecole Polytechnique Federale De Lausanne | Phosphonated polypyridyl compounds and their complexes |
US5523555A (en) | 1994-09-14 | 1996-06-04 | Cambridge Display Technology | Photodetector device having a semiconductive conjugated polymer |
JPH10506502A (ja) | 1994-09-29 | 1998-06-23 | ブリティッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニー | 量子ドットを備えた光ファイバ |
GB9423692D0 (en) | 1994-11-23 | 1995-01-11 | Philips Electronics Uk Ltd | A photoresponsive device |
GB2296815B (en) | 1994-12-09 | 1999-03-17 | Cambridge Display Tech Ltd | Photoresponsive materials |
US5585640A (en) | 1995-01-11 | 1996-12-17 | Huston; Alan L. | Glass matrix doped with activated luminescent nanocrystalline particles |
AU5386296A (en) | 1995-04-05 | 1996-10-23 | Uniax Corporation | Smart polymer image processor |
US5690807A (en) | 1995-08-03 | 1997-11-25 | Massachusetts Institute Of Technology | Method for producing semiconductor particles |
US5897945A (en) | 1996-02-26 | 1999-04-27 | President And Fellows Of Harvard College | Metal oxide nanorods |
US6036774A (en) | 1996-02-26 | 2000-03-14 | President And Fellows Of Harvard College | Method of producing metal oxide nanorods |
EP0792688A1 (en) | 1996-03-01 | 1997-09-03 | Dow Corning Corporation | Nanoparticles of silicon oxide alloys |
JP4619462B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
US5997832A (en) | 1997-03-07 | 1999-12-07 | President And Fellows Of Harvard College | Preparation of carbide nanorods |
US6413489B1 (en) | 1997-04-15 | 2002-07-02 | Massachusetts Institute Of Technology | Synthesis of nanometer-sized particles by reverse micelle mediated techniques |
US6231744B1 (en) * | 1997-04-24 | 2001-05-15 | Massachusetts Institute Of Technology | Process for fabricating an array of nanowires |
DE69819712T2 (de) | 1997-05-07 | 2004-09-23 | Ecole polytechnique fédérale de Lausanne (EPFL) | Fotoempfindlicher metallkomplex und fotovoltaische zelle |
US6730537B2 (en) | 2000-03-24 | 2004-05-04 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon | Scaffold-organized clusters and electronic devices made using such clusters |
US6013871A (en) | 1997-07-02 | 2000-01-11 | Curtin; Lawrence F. | Method of preparing a photovoltaic device |
US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
US6207392B1 (en) | 1997-11-25 | 2001-03-27 | The Regents Of The University Of California | Semiconductor nanocrystal probes for biological applications and process for making and using such probes |
US5990479A (en) | 1997-11-25 | 1999-11-23 | Regents Of The University Of California | Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes |
US20020172802A1 (en) * | 1998-08-20 | 2002-11-21 | Weder Donald E. | Decorative creped shredded material |
US6501091B1 (en) | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
US6277740B1 (en) | 1998-08-14 | 2001-08-21 | Avery N. Goldstein | Integrated circuit trenched features and method of producing same |
JP3569135B2 (ja) * | 1998-09-09 | 2004-09-22 | 株式会社東芝 | 電界放出陰極の製造方法 |
WO2000022682A2 (en) | 1998-10-09 | 2000-04-20 | The Trustees Of Columbia University In The City Of New York | Solid-state photoelectric device |
US6855202B2 (en) | 2001-11-30 | 2005-02-15 | The Regents Of The University Of California | Shaped nanocrystal particles and methods for making the same |
AU782000B2 (en) | 1999-07-02 | 2005-06-23 | President And Fellows Of Harvard College | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
US6649824B1 (en) | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
US6440213B1 (en) | 1999-10-28 | 2002-08-27 | The Regents Of The University Of California | Process for making surfactant capped nanocrystals |
US6306736B1 (en) | 2000-02-04 | 2001-10-23 | The Regents Of The University Of California | Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
US6225198B1 (en) | 2000-02-04 | 2001-05-01 | The Regents Of The University Of California | Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process |
EP1264375A2 (en) | 2000-03-14 | 2002-12-11 | Massachusetts Institute Of Technology | Optical amplifiers and lasers |
AU2001250882A1 (en) | 2000-03-20 | 2001-10-03 | Massachusetts Institute Of Technology | Inorganic particle conjugates |
JP4537528B2 (ja) | 2000-03-29 | 2010-09-01 | 株式会社東芝 | 光記録媒体 |
US6919119B2 (en) | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
ATE342573T1 (de) | 2000-08-15 | 2006-11-15 | Fuji Photo Film Co Ltd | Photoelektrische zelle und herstellungsmethode |
AU8664901A (en) | 2000-08-22 | 2002-03-04 | Harvard College | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
US7301199B2 (en) | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
US6611640B2 (en) | 2000-10-03 | 2003-08-26 | Evident Technologies | Optical dispersion compensator |
JP2002132016A (ja) * | 2000-10-23 | 2002-05-09 | Ricoh Co Ltd | 接触型帯電器、その作製方法およびそれを有する画像形成装置 |
JP2002141633A (ja) * | 2000-10-25 | 2002-05-17 | Lucent Technol Inc | 垂直にナノ相互接続された回路デバイスからなる製品及びその製造方法 |
US6576291B2 (en) | 2000-12-08 | 2003-06-10 | Massachusetts Institute Of Technology | Preparation of nanocrystallites |
DE60135775D1 (de) * | 2000-12-11 | 2008-10-23 | Harvard College | Vorrichtung enthaltend nanosensoren zur ekennung eines analyten und verfahren zu ihrer herstellung |
KR20040030495A (ko) | 2001-01-23 | 2004-04-09 | 퀀텀 폴리머 테크날러쥐스 인코포레이티드 | 전도성 폴리머 물질, 그 제조 방법 및 이용 |
US20020110180A1 (en) | 2001-02-09 | 2002-08-15 | Barney Alfred A. | Temperature-sensing composition |
US6996147B2 (en) | 2001-03-30 | 2006-02-07 | The Regents Of The University Of California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
JP2003012313A (ja) * | 2001-06-26 | 2003-01-15 | Kansai Tlo Kk | 保護カバー付カーボンナノチューブ |
US6794265B2 (en) | 2001-08-02 | 2004-09-21 | Ultradots, Inc. | Methods of forming quantum dots of Group IV semiconductor materials |
EP1438614B1 (en) | 2001-09-17 | 2009-05-13 | Massachusetts Institute Of Technology | Semiconductor nanocrystal composite |
US7777303B2 (en) | 2002-03-19 | 2010-08-17 | The Regents Of The University Of California | Semiconductor-nanocrystal/conjugated polymer thin films |
KR101058483B1 (ko) | 2002-03-29 | 2011-08-24 | 유니버셜 디스플레이 코포레이션 | 반도체 나노결정을 포함하는 발광 소자 |
US20040026684A1 (en) | 2002-04-02 | 2004-02-12 | Nanosys, Inc. | Nanowire heterostructures for encoding information |
US6872645B2 (en) | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
US20040003838A1 (en) | 2002-07-05 | 2004-01-08 | Curtin Lawrence F. | Nano photovoltaic/solar cells |
US7068898B2 (en) | 2002-09-05 | 2006-06-27 | Nanosys, Inc. | Nanocomposites |
EP1540741B1 (en) | 2002-09-05 | 2014-10-29 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
US7051945B2 (en) | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
AU2003283973B2 (en) | 2002-09-30 | 2008-10-30 | Oned Material Llc | Large-area nanoenabled macroelectronic substrates and uses therefor |
AU2004265938B2 (en) * | 2003-08-04 | 2009-07-02 | Nanosys, Inc. | System and process for producing nanowire composites and electronic substrates therefrom |
-
2004
- 2004-08-04 AU AU2004265938A patent/AU2004265938B2/en not_active Ceased
- 2004-08-04 JP JP2006522674A patent/JP2007501525A/ja active Pending
- 2004-08-04 US US10/910,800 patent/US7091120B2/en active Active
- 2004-08-04 KR KR1020067002377A patent/KR101132076B1/ko active IP Right Grant
- 2004-08-04 WO PCT/US2004/025064 patent/WO2005017962A2/en active Application Filing
- 2004-08-04 CA CA002532991A patent/CA2532991A1/en not_active Abandoned
- 2004-08-04 EP EP04779980A patent/EP1652218A2/en not_active Withdrawn
- 2004-08-04 CN CN200480028982XA patent/CN1863954B/zh not_active Expired - Lifetime
-
2005
- 2005-09-14 US US11/225,951 patent/US7468315B2/en active Active
-
2008
- 2008-11-20 US US12/274,904 patent/US7795125B2/en not_active Expired - Lifetime
-
2010
- 2010-08-11 US US12/854,323 patent/US20100323500A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1230283A (zh) * | 1996-05-15 | 1999-09-29 | 海珀里昂催化国际有限公司 | 用于电化学电容器中的纳米级石墨纤维 |
CN1383418A (zh) * | 1998-09-18 | 2002-12-04 | 威廉马歇莱思大学 | 单壁碳质毫微管有助于其溶剂化的化学衍生化以及经衍生化毫微管的用途 |
US6383923B1 (en) * | 1999-10-05 | 2002-05-07 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
US6741019B1 (en) * | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
US6297063B1 (en) * | 1999-10-25 | 2001-10-02 | Agere Systems Guardian Corp. | In-situ nano-interconnected circuit devices and method for making the same |
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AU2004265938A1 (en) | 2005-02-24 |
US20090075468A1 (en) | 2009-03-19 |
US7091120B2 (en) | 2006-08-15 |
JP2007501525A (ja) | 2007-01-25 |
US20070238314A1 (en) | 2007-10-11 |
WO2005017962A2 (en) | 2005-02-24 |
CN1863954A (zh) | 2006-11-15 |
US7468315B2 (en) | 2008-12-23 |
AU2004265938B2 (en) | 2009-07-02 |
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