FR3046243B1 - Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur - Google Patents

Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur

Info

Publication number
FR3046243B1
FR3046243B1 FR1563324A FR1563324A FR3046243B1 FR 3046243 B1 FR3046243 B1 FR 3046243B1 FR 1563324 A FR1563324 A FR 1563324A FR 1563324 A FR1563324 A FR 1563324A FR 3046243 B1 FR3046243 B1 FR 3046243B1
Authority
FR
France
Prior art keywords
nanofil
detectors
semiconductor
separate
fet sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1563324A
Other languages
English (en)
Other versions
FR3046243A1 (fr
Inventor
Willy Ludurczak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1563324A priority Critical patent/FR3046243B1/fr
Priority to US15/387,878 priority patent/US9897568B2/en
Publication of FR3046243A1 publication Critical patent/FR3046243A1/fr
Application granted granted Critical
Publication of FR3046243B1 publication Critical patent/FR3046243B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
FR1563324A 2015-12-24 2015-12-24 Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur Active FR3046243B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1563324A FR3046243B1 (fr) 2015-12-24 2015-12-24 Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur
US15/387,878 US9897568B2 (en) 2015-12-24 2016-12-22 NW-FET sensor comprising at least two distinct semiconducting nanowire detectors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1563324A FR3046243B1 (fr) 2015-12-24 2015-12-24 Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur

Publications (2)

Publication Number Publication Date
FR3046243A1 FR3046243A1 (fr) 2017-06-30
FR3046243B1 true FR3046243B1 (fr) 2017-12-22

Family

ID=55971124

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1563324A Active FR3046243B1 (fr) 2015-12-24 2015-12-24 Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur

Country Status (2)

Country Link
US (1) US9897568B2 (fr)
FR (1) FR3046243B1 (fr)

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
JP2007501525A (ja) * 2003-08-04 2007-01-25 ナノシス・インコーポレイテッド ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法
KR100652381B1 (ko) * 2004-10-28 2006-12-01 삼성전자주식회사 다수의 나노 와이어 채널을 구비한 멀티 브릿지 채널 전계효과 트랜지스터 및 그 제조방법
FR2886459B1 (fr) * 2005-05-31 2007-08-24 Thales Sa Reseau de transistors fet a nanotube ou nanofil semi-conducteur et dispositif electronique correspondant, pour la detection d'analytes
US7924413B2 (en) * 2006-04-28 2011-04-12 Hewlett-Packard Development Company, L.P. Nanowire-based photonic devices
US7741647B2 (en) * 2006-05-22 2010-06-22 Hewlett-Packard Development Company Utilizing nanowire for different applications
US7999251B2 (en) * 2006-09-11 2011-08-16 International Business Machines Corporation Nanowire MOSFET with doped epitaxial contacts for source and drain
US7906778B2 (en) * 2007-04-02 2011-03-15 Hewlett-Packard Development Company, L.P. Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures
KR101375833B1 (ko) * 2007-05-03 2014-03-18 삼성전자주식회사 게르마늄 나노로드를 구비한 전계효과 트랜지스터 및 그제조방법
DE102008030853B4 (de) * 2008-06-30 2014-04-30 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Dreidimensionaler Transistor mit einer Doppelkanal-Konfiguration
US7968935B2 (en) * 2008-08-25 2011-06-28 Seoul National University Research & Development Business Foundation Reconfigurable semiconductor device
WO2011017077A2 (fr) * 2009-07-27 2011-02-10 Trustees Of Boston University Système détecteur à base de nanocanaux à sensibilité contrôlée
JP2011220803A (ja) * 2010-04-08 2011-11-04 Mitsumi Electric Co Ltd 電界効果トランジスタ素子を具備するバイオセンサ
US10216698B2 (en) 2010-06-07 2019-02-26 Commissariat à l 'Energie Atomique et aux Energies Alternatives Analysis device including a MEMS and/or NEMS network
US8896066B2 (en) * 2011-12-20 2014-11-25 Intel Corporation Tin doped III-V material contacts
CN104054181B (zh) * 2011-12-30 2017-10-20 英特尔公司 全包围栅晶体管的可变栅极宽度
US8575009B2 (en) * 2012-03-08 2013-11-05 International Business Machines Corporation Two-step hydrogen annealing process for creating uniform non-planar semiconductor devices at aggressive pitch
US9983183B2 (en) * 2012-04-13 2018-05-29 University Of Maryland, College Park Highly selective nanostructure sensors and methods of detecting target analytes
RU2638130C2 (ru) * 2012-10-16 2017-12-11 Конинклейке Филипс Н.В. Датчик для текучих сред с широким динамическим диапазоном на основе нанопроводной платформы
KR101444260B1 (ko) * 2012-12-05 2014-09-26 포항공과대학교 산학협력단 3차원 적층 구조의 나노선을 갖춘 나노선 전계효과 센서 및 그 제조방법
CN108352400B (zh) * 2015-10-30 2021-09-10 佛罗里达大学研究基金会有限公司 包封的纳米结构及其制造方法
US10157992B2 (en) * 2015-12-28 2018-12-18 Qualcomm Incorporated Nanowire device with reduced parasitics

Also Published As

Publication number Publication date
US20170184540A1 (en) 2017-06-29
FR3046243A1 (fr) 2017-06-30
US9897568B2 (en) 2018-02-20

Similar Documents

Publication Publication Date Title
KR20180085011A (ko) 웨이퍼-레벨 패키지의 열 적외선 센서 어레이
FI20155095A (fi) Mikromekaaninen kulmanopeusanturi
ES1278874Y (es) Dispositivo de sensor de seguridad
DK3465077T3 (da) Påsvejsbart FBG-deformationsfølerarrangement
DE112018001949T8 (de) Objekterfassungsvorrichtung
ITUB20152562A1 (it) Procedimento di funzionamento di sensori di hall e dispositivo corrispondente
FI20155508A (fi) MEMS anturi
DK3329265T3 (da) Sensoranordning
BR112017021852A2 (pt) ferramenta de anexação de sensor.
DE112018005261T8 (de) Gassensor
FR3031586B1 (fr) Capteurs inductifs de deplacement
DE112017005112A5 (de) Sensor
DE112017004618T8 (de) Objekterfassungsvorrichtung
DK3367886T3 (da) Sensoranordning
DK3124938T3 (da) Tryksensor
DK3642056T3 (da) Dæktilstandssensorsamling
DE112016004588T8 (de) Gassensor
DE112016004219A5 (de) Meeresboden-Sensoreinrichtung
DK3324182T3 (da) Fugtighedsmåleapparat
ES1281275Y (es) Dispositivo de sensor de seguridad
FR3042864B1 (fr) Capteur de pression differentielle
DK3032247T3 (da) Gassensorelement
FR3028947B1 (fr) Capteur de temperature
FR3038712B1 (fr) Capteur de charge
DE102017000616A8 (de) Sensor

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20170630

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9