KR101119387B1 - 절단방법 - Google Patents
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- KR101119387B1 KR101119387B1 KR1020107019033A KR20107019033A KR101119387B1 KR 101119387 B1 KR101119387 B1 KR 101119387B1 KR 1020107019033 A KR1020107019033 A KR 1020107019033A KR 20107019033 A KR20107019033 A KR 20107019033A KR 101119387 B1 KR101119387 B1 KR 101119387B1
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Abstract
가공 대상물(1)의 내부에 집광점을 맞추어 레이저 광을 조사하고, 가공 대상물의 절단 예정라인을 따라 가공 대상물의 내부에 다광자 흡수에 의한 피처리부(7, 13)를 형성함과 동시에, 가공 대상물의 내부에 있어 피처리부에 대응하는 소정의 위치에 미소공동(8)을 형성하는 공정을 구비한다.
Description
도 2는 도 1에 도시되는 가공 대상물의 II-II단면도이다.
도 3은 본 실시 형태의 레이저 가공방법에 따라 레이저 가공을 실시한 가공 대상물의 평면도이다.
도 4는 도 3에 도시되는 가공 대상물의 IV-IV단면도이다.
도 5는 도 3에 도시되는 가공 대상물의 V-V단면도이다.
도 6은 본 실시 형태의 레이저 가공방법에 따라 절단된 가공 대상물의 평면도이다.
도 7은 본 실시 형태의 레이저 가공방법으로 사용할 수 있는 레이저 가공장치의 개략 구성도이다.
도 8은 본 실시 형태의 레이저 가공방법을 설명하기 위한 플로우 차트(flow chart)이다.
도 9는 본 실시 형태의 레이저 가공방법에 따라 절단된 실리콘 웨이퍼의 단면의 사진을 도시한 도면이다.
도 10은 본 실시 형태의 레이저 가공방법에 따라 절단된 실리콘 웨이퍼의 단면의 사진을 도시한 도면이다.
도 11은 도9 및 도 10에 나타나는 단면의 전체를 나타내는 사진이다.
도 12는 본 실시 형태의 레이저 가공방법의 조건을 검토한 도면이다.
도 13은 본 실시 형태의 레이저 가공방법에 따라 절단된 실리콘 웨이퍼의 단면의 사진을 나타낸 도면이다.
도 14는 본 실시 형태의 레이저 가공방법에 따라 절단 된 실리콘 웨이퍼의 단면의 사진을 나타낸 도면이다.
도 15는 도 14의 모식도이다.
도 16은 본 실시 형태의 레이저 가공방법의 원리를 검토한 도면이다.
도 17은 본 실시 형태의 레이저 가공방법의 원리를 검토한 도면이다.
도 18은 본 실시 형태의 레이저 가공방법에 따라 레이저 가공을 실시한 가공 대상물의 단면도이다.
도 19는 본 실시 형태의 레이저 가공방법에 따라 레이저 가공을 실시한 가공 대상물의 단면도이다.
도 20은 본 실시 형태의 레이저 가공방법에 따라 레이저 가공을 실시한 가공 대상물의 단면도이다.
5 : 절단예정라인 7 : 피처리부
8 : 미소공동
Claims (17)
- 반도체 기판의 내부에 집광점을 맞추고, 상기 집광점의 피크파워밀도가 1 × 108(W/㎠) 이상의 조건에서 펄스 레이저 광을 조사하며, 상기 펄스 레이저 광을 상기 반도체 기판의 절단예정라인을 따라서 상대적으로 이동시킴으로써, 상기 절단예정라인을 따라서 상기 반도체 기판의 내부에 용융처리영역을 형성함과 아울러, 상기 반도체 기판의 내부에서 상기 용융처리영역을 사이에 두고 상기 펄스 레이저 광의 입사 측과는 반대 측에 상기 절단예정라인을 따라서 서로 이격하도록 복수의 미소공동을 형성하는 공정과,
상기 용융처리영역과 상기 미소공동으로 이루어지는 개질영역을 기점으로 하여 갈라짐을 발생시켜 상기 절단예정라인을 따라서 상기 반도체 기판을 절단하는 공정을 구비하고,
상기 펄스 레이저 광의 펄스 폭은 100nsec ~ 500nsec이며,
상기 펄스 레이저 광의 펄스 피치는 2.00㎛ ~ 6.00㎛인 절단방법. - 청구항 1에 있어서,
상기 절단예정라인을 설정하는 공정을 구비하는 절단방법. - 삭제
- 청구항 1 또는 2에 있어서,
상기 펄스 레이저 광의 펄스 피치는 3.00㎛ ~ 5.00㎛인 절단방법. - 청구항 1 또는 2에 있어서,
상기 반도체 기판의 주면에는 기능소자가 형성되어 있고, 상기 펄스 레이저 광은 상기 주면의 반대 측의 면으로부터 상기 반도체 기판으로 입사시키며, 상기 미소공동은 상기 주면과 상기 용융처리영역과의 사이에 형성되는 절단방법. - 실리콘 웨이퍼의 내부에 집광점을 맞추고, 상기 집광점의 피크파워밀도가 1 × 108(W/㎠) 이상의 조건에서 펄스 레이저 광을 조사하며, 상기 펄스 레이저 광을 상기 실리콘 웨이퍼의 절단예정라인을 따라서 상대적으로 이동시킴으로써, 상기 절단예정라인을 따라서 상기 실리콘 웨이퍼의 내부에 용융처리영역을 형성함과 아울러, 상기 실리콘 웨이퍼의 내부에서 상기 용융처리영역을 사이에 두고 상기 펄스 레이저 광의 입사 측과는 반대 측에 상기 절단예정라인을 따라서 서로 이격하도록 복수의 미소공동을 형성하는 공정과,
상기 용융처리영역과 상기 미소공동으로 이루어지는 개질영역을 기점으로 하여 갈라짐을 발생시켜 상기 절단예정라인을 따라서 상기 실리콘 웨이퍼를 절단하는 공정을 구비하며,
상기 펄스 레이저 광의 펄스 폭은 100nsec ~ 500nsec이며,
상기 펄스 레이저 광의 펄스 피치는 2.00㎛ ~ 6.00㎛인 절단방법. - 청구항 6에 있어서,
상기 미소공동의 가능위치의 깊이는, 상기 펄스 레이저 광의 입사측의 상기 실리콘 웨이퍼의 표면으로부터 45㎛ ~ 90㎛인 절단방법. - 삭제
- 삭제
- 삭제
- 삭제
- 청구항 1 또는 2에 있어서,
상기 반도체 기판에 붙어 있는 익스팬드 테이프를 상기 반도체 기판의 주연(周緣)방향으로 확장하여 상기 반도체 기판을 상기 절단예정라인을 따라서 분리하여 절단하는 절단방법. - 청구항 12에 있어서,
상기 익스팬드 테이프는, 상기 용융처리영역 및 상기 미소공동을 형성한 후에 상기 반도체 기판에 붙여지는 절단방법. - 청구항 12에 있어서,
상기 익스팬드 테이프는, 상기 용융처리영역 및 상기 미소공동을 형성하기 전에 상기 반도체 기판에 붙여지는 절단방법. - 청구항 6 또는 7에 있어서,
상기 실리콘 웨이퍼에 붙어 있는 익스팬드 테이프를 상기 실리콘 웨이퍼의 주연(周緣)방향으로 확장하여 상기 실리콘 웨이퍼를 상기 절단예정라인을 따라서 분리하여 절단하는 절단방법. - 청구항 15에 있어서,
상기 익스팬드 테이프는, 상기 용융처리영역 및 상기 미소공동을 형성한 후에 상기 실리콘 웨이퍼에 붙여지는 절단방법. - 청구항 15에 있어서,
상기 익스팬드 테이프는, 상기 용융처리영역 및 상기 미소공동을 형성하기 전에 상기 실리콘 웨이퍼에 붙여지는 절단방법.
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WO2002022301A1 (fr) | 2000-09-13 | 2002-03-21 | Hamamatsu Photonics K.K. | Procede et dispositif d'usinage par rayonnement laser |
JP2002205180A (ja) * | 2000-09-13 | 2002-07-23 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2003154517A (ja) | 2001-11-21 | 2003-05-27 | Seiko Epson Corp | 脆性材料の割断加工方法およびその装置、並びに電子部品の製造方法 |
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