JP7326053B2 - 被加工物の加工方法 - Google Patents
被加工物の加工方法 Download PDFInfo
- Publication number
- JP7326053B2 JP7326053B2 JP2019129633A JP2019129633A JP7326053B2 JP 7326053 B2 JP7326053 B2 JP 7326053B2 JP 2019129633 A JP2019129633 A JP 2019129633A JP 2019129633 A JP2019129633 A JP 2019129633A JP 7326053 B2 JP7326053 B2 JP 7326053B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- laser beam
- processing
- division
- starting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003672 processing method Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 20
- 238000003754 machining Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Description
本発明の実施形態に係る被加工物の加工方法を図面に基づいて説明する。まず、実施形態に係る被加工物の加工方法の加工対象を説明する。図1は、実施形態に係る被加工物の加工方法の加工対象の被加工物101を含む被加工物ユニット100の斜視図である。なお、図1は、本実施形態の説明のため、実際よりも被加工物101及び被加工物ユニット100に対してデバイス105等を大きく模式的に示しており、以降の図面についても同様である。
被加工物101の表面103側に、被加工物ユニット100(被加工物101及び部材109)より径の大きく伸縮性を有するエキスパンドテープ141の粘着層側を貼着し、エキスパンドテープ141の粘着層側の外周に環状のフレーム142を貼着する。
11 保持テーブル
12 保持面
14 レーザー照射ユニット
15 レーザー光線
16 集光点
20 分割装置
21 フレーム固定ユニット
22 テープ拡張ユニット
100 被加工物ユニット
101 被加工物
102 基板
103 表面
104 分割予定ライン
105 デバイス
107 裏面
109 部材
121 改質層
129 分割起点
131 距離
139 厚さ
141 エキスパンドテープ
142 フレーム
143 環状領域
Claims (4)
- 被加工物の加工方法であって、
被加工物の裏面には被加工物とは材質の異なる部材が積層され、
被加工物の裏面側を保持テーブルに保持する保持ステップと、
該保持ステップの実施後に、被加工物の表面側から、被加工物に対して透過性を有する波長のレーザー光線を被加工物の内部に集光点を合わせた状態で照射し、被加工物の内部に改質層を形成するとともに、該集光点から裏面側に漏れたレーザー光線によって該部材に分割起点を形成する分割起点形成ステップと、
を備え、
該分割起点形成ステップにおいて、該レーザー光線の該集光点が合わせられた位置の裏面からの被加工物の厚さ方向の距離が、該集光点で集光した該レーザー光線の漏れ光の熱により該部材を溶かして変質させて、該部材の内部に該分割起点を形成できる距離であることを特徴とする、被加工物の加工方法。 - 該分割起点形成ステップの実施後に、被加工物の表面側をエキスパンドテープに貼着する貼着ステップと、
該エキスパンドテープを拡張して、該分割起点に沿って被加工物及び該部材を分割する分割ステップと、
を備える事を特徴とする請求項1に記載の被加工物の加工方法。 - 該部材は、DAFまたはメタル膜であることを特徴とする、請求項1または請求項2に記載の被加工物の加工方法。
- 該分割起点形成ステップでは、該レーザー光線の被加工物の表面におけるスポット形状を、長軸が被加工物の加工送り方向と平行な楕円形に形成する事を特徴とする請求項1に記載の被加工物の加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019129633A JP7326053B2 (ja) | 2019-07-11 | 2019-07-11 | 被加工物の加工方法 |
KR1020200073376A KR20210007840A (ko) | 2019-07-11 | 2020-06-17 | 피가공물의 가공 방법 |
US16/918,177 US11569129B2 (en) | 2019-07-11 | 2020-07-01 | Workpiece processing method |
CN202010644377.6A CN112216654A (zh) | 2019-07-11 | 2020-07-07 | 被加工物的加工方法 |
DE102020208482.3A DE102020208482A1 (de) | 2019-07-11 | 2020-07-07 | Waferbearbeitungsverfahren |
TW109123219A TW202103226A (zh) | 2019-07-11 | 2020-07-09 | 被加工物之加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019129633A JP7326053B2 (ja) | 2019-07-11 | 2019-07-11 | 被加工物の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021015889A JP2021015889A (ja) | 2021-02-12 |
JP7326053B2 true JP7326053B2 (ja) | 2023-08-15 |
Family
ID=74059377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019129633A Active JP7326053B2 (ja) | 2019-07-11 | 2019-07-11 | 被加工物の加工方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11569129B2 (ja) |
JP (1) | JP7326053B2 (ja) |
KR (1) | KR20210007840A (ja) |
CN (1) | CN112216654A (ja) |
DE (1) | DE102020208482A1 (ja) |
TW (1) | TW202103226A (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010206044A (ja) | 2009-03-05 | 2010-09-16 | Toshiba Corp | 半導体装置の製造方法 |
JP2011108709A (ja) | 2009-11-13 | 2011-06-02 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2013055137A (ja) | 2011-09-01 | 2013-03-21 | Disco Abrasive Syst Ltd | チップ間隔維持方法 |
JP2016058510A (ja) | 2014-09-09 | 2016-04-21 | 株式会社ディスコ | ワークの分割方法 |
JP2018160579A (ja) | 2017-03-23 | 2018-10-11 | 株式会社ディスコ | 加工方法 |
JP2018170474A (ja) | 2017-03-30 | 2018-11-01 | 三星ダイヤモンド工業株式会社 | 樹脂層付き脆性材料基板の分断方法並びに分断装置 |
JP2018170475A (ja) | 2017-03-30 | 2018-11-01 | 三星ダイヤモンド工業株式会社 | 金属膜付き脆性材料基板の分断方法並びに分断装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2332687B1 (en) * | 2003-07-18 | 2015-02-18 | Hamamatsu Photonics K.K. | Method of laser beam machining a machining target using pulsed laser beam and expanded tape for cutting a machining target |
JP2006073690A (ja) | 2004-09-01 | 2006-03-16 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
US8785234B2 (en) * | 2012-10-31 | 2014-07-22 | Infineon Technologies Ag | Method for manufacturing a plurality of chips |
JP6110136B2 (ja) | 2012-12-28 | 2017-04-05 | 株式会社ディスコ | ウエーハのレーザー加工方法およびレーザー加工装置 |
US10144088B2 (en) * | 2013-12-03 | 2018-12-04 | Rofin-Sinar Technologies Llc | Method and apparatus for laser processing of silicon by filamentation of burst ultrafast laser pulses |
KR20150130835A (ko) * | 2014-05-14 | 2015-11-24 | 주식회사 이오테크닉스 | 금속층이 형성된 반도체 웨이퍼를 절단하는 레이저 가공 방법 및 레이저 가공 장치 |
US9165832B1 (en) * | 2014-06-30 | 2015-10-20 | Applied Materials, Inc. | Method of die singulation using laser ablation and induction of internal defects with a laser |
JP6256917B2 (ja) * | 2014-09-08 | 2018-01-10 | 新電元工業株式会社 | カスコード素子 |
JP6716263B2 (ja) * | 2016-01-22 | 2020-07-01 | 株式会社ディスコ | ウエーハの加工方法 |
EP3468742B1 (en) | 2016-06-14 | 2022-08-31 | Evana Technologies, UAB | A multi-segment focusing lens and the laser processing system for wafer dicing or cutting |
US10607861B2 (en) * | 2017-11-28 | 2020-03-31 | Nxp B.V. | Die separation using adhesive-layer laser scribing |
JP6994646B2 (ja) * | 2018-01-17 | 2022-01-14 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
US11469141B2 (en) * | 2018-08-07 | 2022-10-11 | Texas Instruments Incorporated | Laser dicing for singulation |
-
2019
- 2019-07-11 JP JP2019129633A patent/JP7326053B2/ja active Active
-
2020
- 2020-06-17 KR KR1020200073376A patent/KR20210007840A/ko active Search and Examination
- 2020-07-01 US US16/918,177 patent/US11569129B2/en active Active
- 2020-07-07 CN CN202010644377.6A patent/CN112216654A/zh active Pending
- 2020-07-07 DE DE102020208482.3A patent/DE102020208482A1/de active Pending
- 2020-07-09 TW TW109123219A patent/TW202103226A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010206044A (ja) | 2009-03-05 | 2010-09-16 | Toshiba Corp | 半導体装置の製造方法 |
JP2011108709A (ja) | 2009-11-13 | 2011-06-02 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2013055137A (ja) | 2011-09-01 | 2013-03-21 | Disco Abrasive Syst Ltd | チップ間隔維持方法 |
JP2016058510A (ja) | 2014-09-09 | 2016-04-21 | 株式会社ディスコ | ワークの分割方法 |
JP2018160579A (ja) | 2017-03-23 | 2018-10-11 | 株式会社ディスコ | 加工方法 |
JP2018170474A (ja) | 2017-03-30 | 2018-11-01 | 三星ダイヤモンド工業株式会社 | 樹脂層付き脆性材料基板の分断方法並びに分断装置 |
JP2018170475A (ja) | 2017-03-30 | 2018-11-01 | 三星ダイヤモンド工業株式会社 | 金属膜付き脆性材料基板の分断方法並びに分断装置 |
Also Published As
Publication number | Publication date |
---|---|
DE102020208482A1 (de) | 2021-01-14 |
TW202103226A (zh) | 2021-01-16 |
JP2021015889A (ja) | 2021-02-12 |
US20210013102A1 (en) | 2021-01-14 |
KR20210007840A (ko) | 2021-01-20 |
US11569129B2 (en) | 2023-01-31 |
CN112216654A (zh) | 2021-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6053381B2 (ja) | ウェーハの分割方法 | |
JP5568760B2 (ja) | レーザーによって脆い物質で作られた平行平面板を複数の個々のプレートに分割する方法及び装置 | |
JP2014236034A (ja) | ウェーハの加工方法 | |
JP5495695B2 (ja) | ウエーハの加工方法 | |
TWI459452B (zh) | A method of breaking the film attached to the back of the wafer, and a subsequent film | |
JP2017041472A (ja) | 貼り合せ基板の加工方法 | |
JP6523882B2 (ja) | ウエーハの加工方法 | |
KR20130111994A (ko) | 접착 필름을 갖는 칩의 형성 방법 | |
JP2016087655A (ja) | ウエーハの加工方法 | |
TWI743353B (zh) | 工件加工方法 | |
JP6045361B2 (ja) | ウエーハの加工方法 | |
JP7326053B2 (ja) | 被加工物の加工方法 | |
JP2019033212A (ja) | 分割方法 | |
JP6634300B2 (ja) | ウエーハの加工方法 | |
JP2018067667A (ja) | 分割方法 | |
JP5489808B2 (ja) | 半導体デバイスの製造方法 | |
JP2015107491A (ja) | レーザー加工方法 | |
JP7511981B2 (ja) | 接着用フィルム付きチップの製造方法 | |
JP2020129642A (ja) | エキスパンドシートの拡張方法 | |
JP2023081754A (ja) | 被加工物の加工方法およびレーザー加工装置 | |
JP2023021579A (ja) | ウェーハの分割方法 | |
JP6435140B2 (ja) | ウエーハの分割方法 | |
JP2024101752A (ja) | 被加工物の加工方法 | |
TW202306688A (zh) | 被加工物的加工方法 | |
JP2015179756A (ja) | 脆性基板の加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220520 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230330 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230404 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230526 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230718 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230802 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7326053 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |