JP7326053B2 - Workpiece processing method - Google Patents

Workpiece processing method Download PDF

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JP7326053B2
JP7326053B2 JP2019129633A JP2019129633A JP7326053B2 JP 7326053 B2 JP7326053 B2 JP 7326053B2 JP 2019129633 A JP2019129633 A JP 2019129633A JP 2019129633 A JP2019129633 A JP 2019129633A JP 7326053 B2 JP7326053 B2 JP 7326053B2
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workpiece
laser beam
processing
division
starting point
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JP2021015889A (en
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金艶 趙
良彰 淀
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Disco Corp
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Disco Corp
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Priority to JP2019129633A priority Critical patent/JP7326053B2/en
Priority to KR1020200073376A priority patent/KR20210007840A/en
Priority to US16/918,177 priority patent/US11569129B2/en
Priority to CN202010644377.6A priority patent/CN112216654A/en
Priority to DE102020208482.3A priority patent/DE102020208482A1/en
Priority to TW109123219A priority patent/TW202103226A/en
Publication of JP2021015889A publication Critical patent/JP2021015889A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Description

本発明は、被加工物の加工方法に関する。 The present invention relates to a method for processing a workpiece.

裏面にＤＡＦ（Die Attached Film）が貼着された被加工物を分割する場合、被加工物を分割した後に、被加工物とは別にＤＡＦを分割する技術が知られている（特許文献１参照）。また、裏面にメタル膜が形成された被加工物を分割する場合、被加工物を分割した後に、被加工物とは別にＤＡＦを分割する技術が知られている（特許文献２参照）。 When dividing a workpiece with a DAF (Die Attached Film) attached to the back surface, there is a known technique for dividing the workpiece and then dividing the DAF separately from the workpiece (see Patent Document 1 ). Further, when dividing a workpiece having a metal film formed on the back surface, there is known a technique of dividing the workpiece and then dividing the DAF separately from the workpiece (see Patent Document 2).

特開２０１４－１３０９１０号公報JP 2014-130910 A 特開２００６－０７３６９０号公報JP 2006-073690 A

しかしながら、特許文献１及び特許文献２に記載の技術のように、２回の工程に分けて分割する場合、分割の効率が悪いという問題があった。 However, as in the techniques described in Patent Literatures 1 and 2, there is a problem that the efficiency of division is low when dividing into two steps.

本発明は、かかる問題点に鑑みてなされたものであり、その目的は、裏面に材質の異なる部材が積層された被加工物を効率よく分割する被加工物の加工方法を提供することである。 SUMMARY OF THE INVENTION The present invention has been made in view of such problems, and its object is to provide a method for processing a workpiece that efficiently divides a workpiece having members of different materials laminated on the back surface thereof. .

上述した課題を解決し、目的を達成するために、本発明の被加工物の加工方法は、被加工物の加工方法であって、被加工物の裏面には被加工物とは材質の異なる部材が積層され、被加工物の裏面側を保持テーブルに保持する保持ステップと、該保持ステップの実施後に、被加工物の表面側から、被加工物に対して透過性を有する波長のレーザー光線を被加工物の内部に集光点を合わせた状態で照射し、被加工物の内部に改質層を形成するとともに、該集光点から裏面側に漏れたレーザー光線によって該部材に分割起点を形成する分割起点形成ステップと、を備え、該分割起点形成ステップにおいて、該レーザー光線の該集光点が合わせられた位置の裏面からの被加工物の厚さ方向の距離が、該集光点で集光した該レーザー光線の漏れ光の熱により該部材を溶かして変質させて、該部材の内部に該分割起点を形成できる距離であることを特徴とする。 In order to solve the above-described problems and achieve the object, a method for machining a workpiece according to the present invention is a method for machining a workpiece, wherein the back surface of the workpiece is made of a material different from that of the workpiece. A holding step of holding the back side of the workpiece in which the members are laminated on the holding table; and after the holding step is performed, a laser beam having a wavelength that is transparent to the workpiece is emitted from the front side of the workpiece. Irradiate the inside of the workpiece with the focused point aligned to form a modified layer inside the workpiece, and form a split starting point on the member by the laser beam leaking from the focused point to the back side. and a division starting point forming step, wherein the distance in the thickness direction of the workpiece from the back surface of the position where the converging point of the laser beam is converged at the converging point. The distance is such that the member can be melted and changed in quality by the heat of the leaked light of the emitted laser beam, and the division starting point can be formed inside the member.

該分割起点形成ステップの実施後に、被加工物の表面側をエキスパンドテープに貼着する貼着ステップと、該エキスパンドテープを拡張して、該分割起点に沿って被加工物及び該部材を分割する分割ステップと、を備えてもよい。 After performing the division origin forming step, a bonding step of affixing the surface side of the workpiece to an expanding tape, and expanding the expanding tape to divide the workpiece and the member along the division origin. and a dividing step.

該部材は、ＤＡＦまたはメタル膜であってもよい。また、該分割起点形成ステップでは、該レーザー光線の被加工物の表面におけるスポット形状を、長軸が被加工物の加工送り方向と平行な楕円形に形成してもよい。 The member may be a DAF or a metal film. Further, in the division starting point forming step, the shape of the spot of the laser beam on the surface of the workpiece may be formed into an elliptical shape with a long axis parallel to the direction of feed for processing of the workpiece.

本願発明は、裏面に材質の異なる部材が積層された被加工物を効率よく分割することができる。 ADVANTAGE OF THE INVENTION This invention can divide efficiently the to-be-processed object by which members with different materials were laminated|stacked on the back surface.

図１は、実施形態に係る被加工物の加工方法の加工対象の被加工物を含む被加工物ユニットの斜視図である。FIG. 1 is a perspective view of a workpiece unit including a workpiece to be processed in a workpiece machining method according to an embodiment. 図２は、実施形態に係る被加工物の加工方法を示すフローチャートである。FIG. 2 is a flow chart showing a method for processing a workpiece according to the embodiment. 図３は、図２の分割起点形成ステップを実施する加工装置の斜視図である。FIG. 3 is a perspective view of a processing apparatus that carries out the division starting point forming step of FIG. 図４は、図３に示された加工装置のレーザー照射ユニットの構成を模式的に示す図である。4 is a diagram schematically showing the configuration of a laser irradiation unit of the processing apparatus shown in FIG. 3. FIG. 図５は、図４に示されたレーザー照射ユニットが照射したレーザー光線のスポット形状の一例を示すウェーハの要部の平面図である。5 is a plan view of a main portion of a wafer showing an example of the spot shape of the laser beam irradiated by the laser irradiation unit shown in FIG. 4. FIG. 図６は、図２の分割起点形成ステップを説明する断面図である。FIG. 6 is a cross-sectional view for explaining the dividing starting point forming step of FIG. 図７は、図２の分割ステップを説明する断面図である。FIG. 7 is a cross-sectional view explaining the dividing step of FIG. 図８は、図２の分割ステップを説明する断面図である。FIG. 8 is a cross-sectional view explaining the dividing step of FIG.

本発明を実施するための形態（実施形態）につき、図面を参照しつつ詳細に説明する。以下の実施形態に記載した内容により本発明が限定されるものではない。また、以下に記載した構成要素には、当業者が容易に想定できるもの、実質的に同一のものが含まれる。さらに、以下に記載した構成は適宜組み合わせることが可能である。また、本発明の要旨を逸脱しない範囲で構成の種々の省略、置換又は変更を行うことができる。 A form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. In addition, the components described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. In addition, various omissions, substitutions, or changes in configuration can be made without departing from the gist of the present invention.

〔実施形態〕
本発明の実施形態に係る被加工物の加工方法を図面に基づいて説明する。まず、実施形態に係る被加工物の加工方法の加工対象を説明する。図１は、実施形態に係る被加工物の加工方法の加工対象の被加工物１０１を含む被加工物ユニット１００の斜視図である。なお、図１は、本実施形態の説明のため、実際よりも被加工物１０１及び被加工物ユニット１００に対してデバイス１０５等を大きく模式的に示しており、以降の図面についても同様である。 [Embodiment]
A method for processing a workpiece according to an embodiment of the present invention will be described with reference to the drawings. First, an object to be processed in the method for processing a workpiece according to the embodiment will be described. FIG. 1 is a perspective view of a workpiece unit 100 including a workpiece 101 to be processed by a workpiece machining method according to an embodiment. Note that FIG. 1 schematically shows the device 105 and the like with respect to the workpiece 101 and the workpiece unit 100 larger than they actually are for the purpose of explaining this embodiment, and the same applies to subsequent drawings. .

実施形態に係る被加工物の加工方法の加工対象である被加工物ユニット１００は、被加工物１０１と、被加工物１０１の裏面１０７に積層された被加工物１０１とは異なる部材１０９と、を少なくとも含む。被加工物ユニット１００において、被加工物１０１と部材１０９とは、本実施形態では、径方向の大きさが互いに等しい円板状に形成されているが、本発明はこれに限定されず、いずれか一方がいずれか他方よりも大径な円板状に形成されていてもよく、角形状等の他の形状に形成されていても良い。 The workpiece unit 100, which is the object to be processed by the workpiece machining method according to the embodiment, includes the workpiece 101, a member 109 different from the workpiece 101 laminated on the back surface 107 of the workpiece 101, including at least In the workpiece unit 100, the workpiece 101 and the member 109 are formed in the shape of discs having the same size in the radial direction, but the present invention is not limited to this. Either one may be formed in a disk shape with a larger diameter than the other, or may be formed in another shape such as a square shape.

被加工物１０１は、図１に示すように、本実施形態では、シリコン、サファイア、ガリウムヒ素又はＳｉＣ（炭化ケイ素）などを基板１０２とする円板状の半導体ウェーハや光デバイスウェーハである。被加工物１０１は、図１に示すように、交差（本実施形態では、直交）する複数の分割予定ライン１０４で区画された基板１０２の表面１０３の各デバイス領域にそれぞれデバイス１０５が形成されている。 As shown in FIG. 1, in this embodiment, the workpiece 101 is a disk-shaped semiconductor wafer or optical device wafer having a substrate 102 made of silicon, sapphire, gallium arsenide, SiC (silicon carbide), or the like. As shown in FIG. 1, a workpiece 101 has devices 105 formed in respective device regions on a surface 103 of a substrate 102 partitioned by a plurality of intersecting (orthogonal in this embodiment) dividing lines 104 . there is

部材１０９は、本実施形態では、被加工物１０１の裏面１０７に貼着されたＤＡＦ（Die Attach Film）、または、被加工物１０１の裏面１０７に成膜されたメタル膜であるが、本発明ではこれに限定されない。部材１０９の一例であるＤＡＦは、被加工物ユニット１００から個々に分割されたデバイス１０５を他のデバイスチップや他の基板等に固定するためのものであり、伸縮性を有する延性材である。部材１０９の他の例であるメタル膜は、例えば、デバイス１０５の電極やヒートシンク等である。 In this embodiment, the member 109 is a DAF (Die Attach Film) attached to the back surface 107 of the workpiece 101 or a metal film formed on the back surface 107 of the workpiece 101. However, it is not limited to this. A DAF, which is an example of the member 109, is for fixing the devices 105 individually divided from the workpiece unit 100 to other device chips or other substrates, and is a ductile material having elasticity. A metal film, which is another example of the member 109, is, for example, an electrode of the device 105, a heat sink, or the like.

被加工物ユニット１００は、被加工物１０１と部材１０９とが共に各分割予定ライン１０４に沿って分割されて、個々の部材１０９付きのデバイス１０５に分割される。 The workpiece unit 100 is split into devices 105 with individual members 109 with both the workpiece 101 and the members 109 split along respective splitting lines 104 .

次に、実施形態に係る被加工物の加工方法を説明する。図２は、実施形態に係る被加工物の加工方法を示すフローチャートである。図３は、図２の分割起点形成ステップＳＴ１２を実施する加工装置１０の斜視図である。図４は、図３に示された加工装置１０のレーザー照射ユニットの構成を模式的に示す図である。図５は、図４に示されたレーザー照射ユニットが照射したレーザー光線のスポット形状の一例を示すウェーハの要部の平面図である。図６は、図２の分割起点形成ステップＳＴ１２を説明する断面図である。図７及び図８は、図２の分割ステップＳＴ１４を説明する断面図である。実施形態に係る被加工物の加工方法は、図２に示すように、保持ステップＳＴ１１と、分割起点形成ステップＳＴ１２と、貼着ステップＳＴ１３と、分割ステップＳＴ１４と、を備える。 Next, a method for processing a workpiece according to the embodiment will be described. FIG. 2 is a flow chart showing a method for processing a workpiece according to the embodiment. FIG. 3 is a perspective view of the processing device 10 that carries out the division starting point forming step ST12 of FIG. FIG. 4 is a diagram schematically showing the configuration of the laser irradiation unit of the processing apparatus 10 shown in FIG. 3. As shown in FIG. 5 is a plan view of a main portion of a wafer showing an example of the spot shape of the laser beam irradiated by the laser irradiation unit shown in FIG. 4. FIG. FIG. 6 is a cross-sectional view for explaining the dividing starting point forming step ST12 in FIG. 7 and 8 are cross-sectional views explaining the division step ST14 in FIG. The method for processing a workpiece according to the embodiment includes, as shown in FIG. 2, a holding step ST11, a split starting point forming step ST12, an adhering step ST13, and a splitting step ST14.

実施形態に係る被加工物の加工方法において、保持ステップＳＴ１１と、分割起点形成ステップＳＴ１２とは、図３に示す加工装置１０により実施される。加工装置１０は、図３に示すように、保持面１２で被加工物ユニット１００（被加工物１０１及び部材１０９）を保持する保持テーブル１１と、保持テーブル１１に保持された被加工物ユニット１００（被加工物１０１及び部材１０９）に向けてレーザー光線１５（図６参照）を照射するレーザー照射ユニット１４と、保持テーブル１１を水平内の一方向であるＸ軸方向に移動させるＸ軸移動ユニット１７と、保持テーブル１１を水平内の別の一方向であるＹ軸方向に移動させるＹ軸移動ユニット１８と、保持テーブル１１に保持された被加工物ユニット１００（被加工物１０１及び部材１０９）を撮像する撮像ユニット１９と、各部及び各ユニットを制御する不図示の制御ユニットと、を備える。 In the method for processing a workpiece according to the embodiment, the holding step ST11 and the division starting point forming step ST12 are performed by the processing apparatus 10 shown in FIG. As shown in FIG. 3, the processing apparatus 10 includes a holding table 11 that holds a workpiece unit 100 (the workpiece 101 and the member 109) on a holding surface 12, and the workpiece unit 100 held by the holding table 11. A laser irradiation unit 14 that irradiates a laser beam 15 (see FIG. 6) toward (the workpiece 101 and the member 109), and an X-axis movement unit 17 that moves the holding table 11 in the X-axis direction, which is one horizontal direction. , the Y-axis moving unit 18 that moves the holding table 11 in the Y-axis direction, which is another horizontal direction, and the workpiece unit 100 (the workpiece 101 and the member 109) held by the holding table 11. An imaging unit 19 for imaging, and a control unit (not shown) for controlling each section and each unit are provided.

レーザー照射ユニット１４は、図４に示すように、被加工物１０１の基板１０２に対して透過性を有する波長のレーザー光線１５を発振するレーザー発振器１４４と、レーザー発振器１４４から出射されたレーザー光線１５を保持テーブル１１の保持面１２に保持した被加工物１０１に向けて反射するミラー１４５と、レーザー光線１５を被加工物１０１の内部に集光する集光レンズ１４９と、レーザー光線１５の集光点１６をＸ軸方向とＹ軸方向との双方に直交するＺ軸方向に移動する図示しない集光点位置調整手段と、レーザー光線１５の被加工物１０１の表面１０３におけるスポット形状１５１を楕円形に成形する楕円スポット整形手段１４６とを備える。 As shown in FIG. 4, the laser irradiation unit 14 holds a laser oscillator 144 that oscillates a laser beam 15 having a wavelength that is transparent to the substrate 102 of the workpiece 101, and the laser beam 15 emitted from the laser oscillator 144. A mirror 145 that reflects toward the workpiece 101 held on the holding surface 12 of the table 11, a condenser lens 149 that converges the laser beam 15 inside the workpiece 101, and a condensing point 16 of the laser beam 15 are X. An elliptical spot for shaping the spot shape 151 of the laser beam 15 on the surface 103 of the workpiece 101 into an elliptical shape. and shaping means 146 .

実施形態１では、楕円スポット整形手段１４６は、ミラー１４５と集光レンズ１４９との間に配置され、平凹シリンドリカルレンズ１４７と平凸シリンドリカルレンズ１４８とから構成される。レーザー光線１５は、平凹シリンドリカルレンズ１４７で線状に集光されてから平凸シリンドリカルレンズ１４８で楕円形状のスポット形状１５１を有するコリメートビーム（平行光線）に変換される。 In Embodiment 1, the elliptical spot shaping means 146 is arranged between the mirror 145 and the condenser lens 149 and is composed of a plano-concave cylindrical lens 147 and a plano-convex cylindrical lens 148 . The laser beam 15 is linearly focused by a plano-concave cylindrical lens 147 and converted into a collimated beam (parallel beam) having an elliptical spot shape 151 by a plano-convex cylindrical lens 148 .

実施形態１では、楕円スポット整形手段１４６は、レーザー光線１５の被加工物１０１の表面１０３における楕円形のスポット形状１５１の長軸を、図５に示すように、被加工物１０１の加工送り方向であるＸ軸方向と平行に位置付ける。 In Embodiment 1, the elliptical spot shaping means 146 aligns the long axis of the elliptical spot shape 151 of the laser beam 15 on the surface 103 of the workpiece 101 in the feed direction of the workpiece 101 as shown in FIG. It is positioned parallel to some X-axis direction.

保持ステップＳＴ１１は、被加工物１０１の裏面１０７側、すなわち、被加工物ユニット１００の部材１０９側を、図３に示す加工装置１０の保持テーブル１１に保持させるステップである。 The holding step ST11 is a step of holding the back surface 107 side of the workpiece 101, ie, the member 109 side of the workpiece unit 100, on the holding table 11 of the processing apparatus 10 shown in FIG.

保持ステップＳＴ１１では、具体的には、本実施形態では、まず、図６に示すように、保持テーブル１１で保持される側である被加工物ユニット１００の部材１０９側に、部材１０９側を保護し、被加工物ユニット１００（被加工物１０１及び部材１０９）より径の大きい保護テープ１１１を貼着し、さらに、保護テープ１１１の外周に環状のフレーム１１２を貼着する。保持ステップＳＴ１１では、次に、図６に示すように、保護テープ１１１を介して、被加工物ユニット１００の部材１０９側を、保持テーブル１１の保持面１２で吸引保持させる。なお、加工装置１０の保持テーブル１１は、不図示の真空源が接続されており、保持面１２で吸引保持することができる。 Specifically, in the holding step ST11, in this embodiment, first, as shown in FIG. Then, a protective tape 111 having a diameter larger than that of the workpiece unit 100 (workpiece 101 and member 109) is attached, and an annular frame 112 is attached to the outer periphery of the protective tape 111. FIG. In the holding step ST11, as shown in FIG. 6, the member 109 side of the workpiece unit 100 is sucked and held by the holding surface 12 of the holding table 11 via the protective tape 111. Next, as shown in FIG. A vacuum source (not shown) is connected to the holding table 11 of the processing apparatus 10 , and the holding surface 12 can be held by suction.

分割起点形成ステップＳＴ１２は、保持ステップＳＴ１１の実施後に、図６に示すように、被加工物１０１の表面１０３側から、被加工物１０１に対して透過性を有する波長のレーザー光線１５を被加工物１０１の内部に集光点１６を合わせた状態で照射し、被加工物１０１の内部に改質層１２１を形成するとともに、集光点１６から裏面１０７側に漏れたレーザー光線１５によって部材１０９に分割起点１２９を形成するステップである。 In the division starting point forming step ST12, after the holding step ST11 is performed, as shown in FIG. The laser beam 15 is irradiated to the inside of the workpiece 101 with the condensing point 16 aligned to form a modified layer 121 inside the workpiece 101, and the laser beam 15 leaking from the condensing point 16 to the back surface 107 side splits the laser beam 109 into the member 109. The step of forming the starting point 129 .

分割起点形成ステップＳＴ１２では、具体的には、まず、レーザー光線１５の照射の前に、撮像ユニット１９により被加工物ユニット１００（被加工物１０１及び部材１０９）を撮像して、被加工物ユニット１００（被加工物１０１及び部材１０９）とレーザー照射ユニット１４との位置合わせを行うアライメントを遂行する。 Specifically, in the division starting point forming step ST12, first, before the irradiation of the laser beam 15, the imaging unit 19 images the workpiece unit 100 (the workpiece 101 and the member 109), and the workpiece unit 100 is imaged. Alignment for aligning (the workpiece 101 and the member 109) and the laser irradiation unit 14 is performed.

分割起点形成ステップＳＴ１２では、次に、被加工物１０１に対して透過性を有する波長のレーザー光線１５の集光点１６を被加工物１０１の内部に合わせる。分割起点形成ステップＳＴ１２では、そして、被加工物１０１の内部にレーザー光線１５の集光点１６を合わせた状態で、レーザー照射ユニット１４によりレーザー光線１５を照射しながら、Ｘ軸移動ユニット１７またはＹ軸移動ユニット１８により被加工物ユニット１００（被加工物１０１及び部材１０９）を保持する保持テーブル１１側を移動させることで、レーザー光線１５を分割予定ライン１０４に沿って照射する。 In the division starting point forming step ST12, next, the condensing point 16 of the laser beam 15 having a wavelength that is transparent to the workpiece 101 is aligned with the inside of the workpiece 101. FIG. In the division starting point forming step ST12, while the laser beam 15 is emitted from the laser irradiation unit 14 with the focal point 16 of the laser beam 15 aligned with the inside of the workpiece 101, the X-axis movement unit 17 or the Y-axis movement is performed. By moving the side of the holding table 11 that holds the workpiece unit 100 (the workpiece 101 and the member 109 ) by the unit 18 , the laser beam 15 is irradiated along the dividing line 104 .

これにより、分割起点形成ステップＳＴ１２では、集光点１６が合わせられた位置を中心に、被加工物１０１の内部に分割予定ライン１０４に沿って改質層１２１のラインを形成するとともに、集光点１６から裏面１０７側に漏れたレーザー光線１５によって、改質層１２１に対して厚み方向に対向する部材１０９の内部の位置を中心に、部材１０９の内部に分割予定ライン１０４に沿って分割起点１２９のラインを形成する。 As a result, in the division starting point forming step ST12, a line of the modified layer 121 is formed along the dividing line 104 inside the workpiece 101 centering on the position where the light condensing point 16 is aligned, and light is condensed. By the laser beam 15 leaking from the point 16 to the rear surface 107 side, a division starting point 129 is formed inside the member 109 along the planned division line 104 centering on the position inside the member 109 facing the modified layer 121 in the thickness direction. form a line of

図６では、－Ｙ方向側から順に、Ｘ軸方向に沿う６本の分割予定ライン１０４に沿って、被加工物ユニット１００の被加工物１０１及び部材１０９のそれぞれ内部に、改質層１２１及び分割起点１２９のそれぞれのラインが形成された状態を示している。分割起点形成ステップＳＴ１２では、最終的に、全ての分割予定ライン１０４に沿って、被加工物１０１及び部材１０９のそれぞれの内部に改質層１２１及び分割起点１２９のそれぞれのラインを形成する。 In FIG. 6, a modified layer 121 and a modified layer 121 and a It shows a state in which each line of division starting points 129 is formed. In the division starting point forming step ST12, lines of the modified layer 121 and division starting points 129 are finally formed inside the workpiece 101 and the member 109 along all the dividing lines 104, respectively.

分割起点形成ステップＳＴ１２では、本実施形態では、さらに、全ての分割予定ライン１０４について、被加工物１０１の内部の第１の所定深さ、及び第２の所定深さにレーザー光線１５の集光点１６を位置付けて、合計２回、レーザー光線１５を照射させることにより、被加工物１０１の内部に改質層１２１を形成するとともに、２回のうち集光点１６を被加工物１０１の内部の最深の所定深さに位置付ける際に、集光点１６から裏面１０７側に漏れたレーザー光線１５により、分割起点１２９を形成する。なお、分割起点形成ステップＳＴ１２におけるレーザー光線１５の照射回数は、上記した様態の２回に限定されず、被加工物１０１の厚み及びレーザー光線１５の照射条件等に応じて、適宜変更することができる。 In the division starting point formation step ST12, in the present embodiment, furthermore, for all the division lines 104, the focal points of the laser beam 15 are formed at a first predetermined depth and a second predetermined depth inside the workpiece 101. 16 is positioned and the laser beam 15 is irradiated a total of two times to form a modified layer 121 inside the workpiece 101 and to set the condensing point 16 to the deepest point inside the workpiece 101 during the two times. , a split starting point 129 is formed by the laser beam 15 leaking from the condensing point 16 to the rear surface 107 side. The number of times of irradiation with the laser beam 15 in the division starting point forming step ST12 is not limited to two times as described above, and can be appropriately changed according to the thickness of the workpiece 101 and the irradiation conditions of the laser beam 15.

ここで、分割起点形成ステップＳＴ１２では、レーザー光線１５の集光点１６が合わせられた位置の裏面１０７からの被加工物１０１の厚さ方向の距離１３１を、極力短く、即ち集光点１６が部材１０９のより近いことが望ましい。即ち、距離１３１は、集光点１６で集光したレーザー光線１５の漏れ光がその熱により部材１０９を溶かして変質させて、部材１０９の内部の分割予定ライン１０４の直下に分割起点１２９を形成できる距離である。 Here, in the division starting point forming step ST12, the distance 131 in the thickness direction of the workpiece 101 from the rear surface 107 of the position where the condensing point 16 of the laser beam 15 is aligned is made as short as possible. Closer to 109 is desirable. That is, the distance 131 is such that the leakage light of the laser beam 15 condensed at the condensing point 16 melts the member 109 due to its heat and alters its properties, so that the division starting point 129 can be formed directly below the planned division line 104 inside the member 109 . Distance.

実施形態に係る被加工物の加工方法では、分割起点形成ステップＳＴ１２の実施を終了すると、保持ステップＳＴ１１で被加工物ユニット１００（被加工物１０１及び部材１０９）に装着した保護テープ１１１及びフレーム１１２を取り外す。 In the method for processing a workpiece according to the embodiment, when the division starting point forming step ST12 is completed, the protective tape 111 and the frame 112 attached to the workpiece unit 100 (the workpiece 101 and the member 109) in the holding step ST11 are removed. Remove the

貼着ステップＳＴ１３は、図７に示すように、分割起点形成ステップＳＴ１２の実施後に、被加工物１０１の表面１０３側を、エキスパンドテープ１４１に貼着するステップである。 The attaching step ST13 is a step of attaching the surface 103 side of the workpiece 101 to the expanding tape 141 after the division starting point forming step ST12 is performed, as shown in FIG.

貼着ステップＳＴ１３では、具体的には、本実施形態では、まず、図７に示すように、
被加工物１０１の表面１０３側に、被加工物ユニット１００（被加工物１０１及び部材１０９）より径の大きく伸縮性を有するエキスパンドテープ１４１の粘着層側を貼着し、エキスパンドテープ１４１の粘着層側の外周に環状のフレーム１４２を貼着する。 Specifically, in the sticking step ST13, in this embodiment, first, as shown in FIG.
The adhesive layer side of the expanding tape 141 having a larger diameter and elasticity than the workpiece unit 100 (the workpiece 101 and the member 109) is adhered to the surface 103 side of the workpiece 101, and the adhesive layer of the expanding tape 141 is attached. An annular frame 142 is attached to the outer periphery of the side.

実施形態に係る被加工物の加工方法において、分割ステップＳＴ１４は、図７及び図８に示す分割装置２０により実施される。分割装置２０は、図７及び図８に示すように、エキスパンドテープ１４１の外周部分が貼着されたフレーム１４２を固定するフレーム固定ユニット２１と、エキスパンドテープ１４１を拡張するテープ拡張ユニット２２と、各ユニットを制御する不図示の制御ユニットと、を備える。フレーム固定ユニット２１及びテープ拡張ユニット２２は、平面形状が概ね同軸の円形に形成されている。テープ拡張ユニット２２は、フレーム固定ユニット２１に対して径方向の内側に、フレーム固定ユニット２１に形成された開口内に設けられている。 In the method for processing a workpiece according to the embodiment, the dividing step ST14 is performed by the dividing device 20 shown in FIGS. 7 and 8. FIG. As shown in FIGS. 7 and 8, the dividing device 20 includes a frame fixing unit 21 for fixing a frame 142 to which the outer peripheral portion of the expanding tape 141 is adhered, a tape expanding unit 22 for expanding the expanding tape 141, and and a control unit (not shown) that controls the unit. The frame fixing unit 21 and the tape extending unit 22 are formed in a generally coaxial circular planar shape. The tape extension unit 22 is provided inside the frame fixing unit 21 in the radial direction and in an opening formed in the frame fixing unit 21 .

分割ステップＳＴ１４は、図７及び図８に示すように、エキスパンドテープ１４１を拡張して、改質層１２１及び分割起点１２９に沿って被加工物１０１及び部材１０９を分割することで、被加工物ユニット１００を一度に分割するステップである。 In the dividing step ST14, as shown in FIGS. 7 and 8, the expanding tape 141 is expanded to divide the workpiece 101 and the member 109 along the modified layer 121 and the division starting point 129, so that the workpiece This is the step of dividing the unit 100 at once.

分割ステップＳＴ１４では、まず、図７に示すように、フレーム固定ユニット２１により、フレーム１４２を全周にわたって外周側から挟持することにより、フレーム１４２を固定する。分割ステップＳＴ１４では、次に、図８に示すように、テープ拡張ユニット２２をフレーム固定ユニット２１に対して鉛直方向に沿う軸心に沿って上方に向けて相対的に移動させることで、エキスパンドテープ１４１のフレーム１４２の内周縁と被加工物ユニット１００の外周縁との間の環状領域１４３を被加工物１０１の表面１０３と直交する方向に押圧してエキスパンドテープ１４１を拡張する。 In the dividing step ST14, first, as shown in FIG. 7, the frame 142 is fixed by the frame fixing unit 21 by holding the frame 142 from the outer peripheral side over the entire circumference. Next, in the dividing step ST14, as shown in FIG. 8, the tape expanding unit 22 is relatively moved upward along the axis along the vertical direction with respect to the frame fixing unit 21, thereby expanding the expanded tape. The expanding tape 141 is expanded by pressing the annular region 143 between the inner peripheral edge of the frame 142 of 141 and the outer peripheral edge of the workpiece unit 100 in a direction perpendicular to the surface 103 of the workpiece 101 .

これにより、分割ステップＳＴ１４では、エキスパンドテープ１４１の拡張により改質層１２１及び分割起点１２９に、同時にかつ同程度に、エキスパンドテープ１４１の延びる方向に沿う離間方向の外力を付与して、分割予定ライン１０４に沿って形成された分割の起点である改質層１２１及び分割起点１２９から被加工物１０１及び部材１０９をそれぞれ一度に破断する。この結果、分割ステップＳＴ１４では、被加工物ユニット１００の被加工物１０１及び部材１０９が各分割予定ライン１０４に沿って分割されて、個々に分割された部材１０９付きのデバイス１０５が得られる。 As a result, in the dividing step ST14, the expansion of the expanding tape 141 applies an external force in the separating direction along the extending direction of the expanding tape 141 to the modified layer 121 and the dividing starting point 129 at the same time and to the same extent, thereby dividing the planned dividing line. The workpiece 101 and the member 109 are broken at once from the modified layer 121 and the splitting starting point 129 formed along the line 104, which are the splitting starting points. As a result, in the dividing step ST14, the workpiece 101 and the members 109 of the workpiece unit 100 are divided along the dividing lines 104 to obtain the devices 105 with the individually divided members 109. FIG.

このように、実施形態に係る被加工物の加工方法を経て、被加工物１０１及び部材１０９を含む被加工物ユニット１００から、個々に分割された部材１０９付きのデバイス１０５が得られる。 As described above, the device 105 with the individually divided members 109 is obtained from the workpiece unit 100 including the workpiece 101 and the members 109 through the workpiece processing method according to the embodiment.

実施形態に係る被加工物の加工方法は、分割起点形成ステップＳＴ１２で、スポット形状１５１を長軸がＸ軸方向と平行な楕円形に形成して、被加工物１０１の表面１０３側から、被加工物１０１に対して透過性を有する波長のレーザー光線１５を被加工物１０１の内部に集光点１６を合わせた状態で照射することで、被加工物１０１の内部に改質層１２１を形成するとともに、集光点１６から裏面１０７側に漏れたレーザー光線１５によって部材１０９に分割起点１２９を形成する。このため、実施形態に係る被加工物の加工方法は、改質層１２１及び分割起点１２９に同時に離間方向の外力を付与することで、材質の異なる層である被加工物１０１及び部材１０９を一度に分割することができるという作用効果を奏する。すなわち、実施形態に係る被加工物の加工方法は、ことができるという作用効果を奏する。裏面１０７に材質の異なる部材１０９が積層された被加工物１０１を効率よく分割することができるという作用効果を奏する。 In the method for processing the workpiece according to the embodiment, in the division starting point forming step ST12, the spot shape 151 is formed into an elliptical shape with the long axis parallel to the X-axis direction, and the workpiece 101 is cut from the surface 103 side. A modified layer 121 is formed inside the workpiece 101 by irradiating the workpiece 101 with a laser beam 15 having a wavelength that is permeable to the workpiece 101 with the focal point 16 aligned with the inside of the workpiece 101 . At the same time, a split starting point 129 is formed in the member 109 by the laser beam 15 leaking from the condensing point 16 to the rear surface 107 side. For this reason, in the method for processing a workpiece according to the embodiment, the workpiece 101 and the member 109, which are layers of different materials, are separated once by simultaneously applying an external force in the separation direction to the modified layer 121 and the division starting point 129. There is an operational effect that it can be divided into . That is, the method for processing a workpiece according to the embodiment has the effect of being able to. It is possible to efficiently divide the workpiece 101 in which the members 109 made of different materials are laminated on the back surface 107 .

また、実施形態に係る被加工物の加工方法は、スポット形状１５１を長軸がＸ軸方向と平行な楕円形に形成し、前述した距離１３１となる位置に集光点１６を設定して、レーザー光線１５を照射する。スポット形状が真円状の場合、集光点から漏れる光は分割予定ライン１０４の下方で分割予定ライン１０４の外側の位置に照射されてしまう恐れがある。これに対して、本実施形態の被加工物の加工方法は、スポット形状が楕円状であるのでＸ方向と直交するＹ方向への広がりを小さくすることができ、集光点１６から漏れるレーザー光が分割予定ライン１０４の下方で、分割予定ライン１０４より外側ではなく分割予定ライン１０４の幅内、すなわち直下に収まって照射されやすくなる。また、一度の分割予定ライン１０４に沿ったレーザー光線１５の照射により、改質層１２１及び分割起点１２９を同時に形成することができるので、従来のように２回に分けて加工するよりも改質層１２１を起点とした分割ラインと分割起点１２９を起点とした分割ラインとのずれが小さくなる。このため、実施形態に係る被加工物の加工方法は、従来のように被加工物１０１と部材１０９とを別々に分割した場合に発生するおそれのあった被加工物１０１の分割ラインと部材１０９の分割ラインとの間に生じるラインずれの現象を大幅に抑制することができるという作用効果を奏する。 Further, in the method for processing a workpiece according to the embodiment, the spot shape 151 is formed in an elliptical shape with the long axis parallel to the X-axis direction, and the condensing point 16 is set at the position where the distance 131 described above is obtained. A laser beam 15 is applied. If the spot shape is a perfect circle, there is a risk that the light leaking from the condensing point will irradiate a position below the planned division line 104 and outside the planned division line 104 . On the other hand, in the method for processing a workpiece according to the present embodiment, since the spot shape is elliptical, the spread in the Y direction orthogonal to the X direction can be reduced, and the laser light leaking from the condensing point 16 can be reduced. is located below the planned division line 104, not outside the planned division line 104, but within the width of the planned division line 104, that is, directly below the planned division line 104, so that it is likely to be irradiated. In addition, since the modified layer 121 and the division starting point 129 can be simultaneously formed by irradiating the laser beam 15 along the planned division line 104 once, the modified layer 121 can be processed in two separate steps as in the conventional art. The deviation between the dividing line starting at 121 and the dividing line starting at the dividing starting point 129 is reduced. For this reason, the method for processing a workpiece according to the embodiment can be used to separate the workpiece 101 and the member 109 from the dividing line of the workpiece 101 that may occur when the workpiece 101 and the member 109 are separately divided as in the conventional art. It is possible to greatly suppress the phenomenon of line deviation occurring between the dividing line and the dividing line.

実施形態に係る被加工物の加工方法は、分割起点形成ステップＳＴ１２の実施後に、被加工物１０１の表面１０３側をエキスパンドテープ１４１に貼着する貼着ステップＳＴ１３と、エキスパンドテープ１４１を拡張して、改質層１２１及び分割起点１２９に沿って被加工物１０１及び部材１０９を分割する分割ステップＳＴ１４と、を備える。このため、実施形態に係る被加工物の加工方法は、エキスパンドテープ１４１を使用して改質層１２１及び分割起点１２９に同時に離間方向の外力を付与することで、好適に、材質の異なる層である被加工物１０１及び部材１０９を一度に分割することができるという作用効果を奏する。 In the method of processing a workpiece according to the embodiment, after performing the division starting point forming step ST12, the bonding step ST13 of bonding the surface 103 side of the workpiece 101 to the expanding tape 141, and expanding the expanding tape 141 , and a dividing step ST14 for dividing the workpiece 101 and the member 109 along the modified layer 121 and the dividing starting point 129 . For this reason, the method for processing a workpiece according to the embodiment uses the expanding tape 141 to simultaneously apply an external force in the separation direction to the modified layer 121 and the splitting starting point 129 , so that layers made of different materials can be preferably processed. It has the effect of being able to divide a workpiece 101 and a member 109 at once.

実施形態に係る被加工物の加工方法は、部材１０９は、ＤＡＦまたはメタル膜が使用されている。このため、実施形態に係る被加工物の加工方法は、従来では被加工物１０１の分割工程とは別の分割工程が必要であったＤＡＦまたはメタル膜が被加工物１０１に積層されている場合でも、一度で効率よく分割することができるという作用効果を奏する。 In the workpiece processing method according to the embodiment, the member 109 uses DAF or a metal film. For this reason, the method for processing a workpiece according to the embodiment can be applied to a case where a DAF or a metal film is laminated on the workpiece 101, which conventionally required a dividing step separate from the dividing step of the workpiece 101. However, there is a working effect that it is possible to divide efficiently at once.

なお、本発明は、上記実施形態に限定されるものではない。即ち、本発明の骨子を逸脱しない範囲で種々変形して実施することができる。 In addition, this invention is not limited to the said embodiment. That is, various modifications can be made without departing from the gist of the present invention.

１０ 加工装置
１１ 保持テーブル
１２ 保持面
１４ レーザー照射ユニット
１５ レーザー光線
１６ 集光点
２０ 分割装置
２１ フレーム固定ユニット
２２ テープ拡張ユニット
１００ 被加工物ユニット
１０１ 被加工物
１０２ 基板
１０３ 表面
１０４ 分割予定ライン
１０５ デバイス
１０７ 裏面
１０９ 部材
１２１ 改質層
１２９ 分割起点
１３１ 距離
１３９ 厚さ
１４１ エキスパンドテープ
１４２ フレーム
１４３ 環状領域 REFERENCE SIGNS LIST 10 processing device 11 holding table 12 holding surface 14 laser irradiation unit 15 laser beam 16 condensing point 20 dividing device 21 frame fixing unit 22 tape extension unit 100 workpiece unit 101 workpiece 102 substrate 103 surface 104 planned division line 105 device 107 Rear surface 109 Member 121 Modified layer 129 Division starting point 131 Distance 139 Thickness 141 Expanding tape 142 Frame 143 Annular region

Claims (4)

被加工物の加工方法であって、
被加工物の裏面には被加工物とは材質の異なる部材が積層され、
被加工物の裏面側を保持テーブルに保持する保持ステップと、
該保持ステップの実施後に、被加工物の表面側から、被加工物に対して透過性を有する波長のレーザー光線を被加工物の内部に集光点を合わせた状態で照射し、被加工物の内部に改質層を形成するとともに、該集光点から裏面側に漏れたレーザー光線によって該部材に分割起点を形成する分割起点形成ステップと、
を備え、
該分割起点形成ステップにおいて、該レーザー光線の該集光点が合わせられた位置の裏面からの被加工物の厚さ方向の距離が、該集光点で集光した該レーザー光線の漏れ光の熱により該部材を溶かして変質させて、該部材の内部に該分割起点を形成できる距離であることを特徴とする、被加工物の加工方法。 A method for processing a workpiece,
A member made of a different material from the workpiece is laminated on the back surface of the workpiece,
a holding step of holding the back side of the workpiece on the holding table;
After the holding step is performed, a laser beam having a wavelength that is transparent to the workpiece is irradiated from the surface side of the workpiece with the focal point aligned with the inside of the workpiece, and the workpiece is A division origin forming step of forming a modified layer inside and forming division origins in the member by a laser beam leaked from the condensing point to the back surface side;
with
In the division starting point forming step, the distance in the thickness direction of the workpiece from the back surface of the position where the condensing point of the laser beam is aligned is reduced by the heat of the leaked light of the laser beam condensed at the condensing point. A method of processing a workpiece, wherein the distance is such that the starting point of division can be formed inside the member by melting and altering the member. 該分割起点形成ステップの実施後に、被加工物の表面側をエキスパンドテープに貼着する貼着ステップと、
該エキスパンドテープを拡張して、該分割起点に沿って被加工物及び該部材を分割する分割ステップと、
を備える事を特徴とする請求項１に記載の被加工物の加工方法。 an adhering step of adhering the surface side of the workpiece to the expanding tape after the division starting point forming step;
a splitting step of expanding the expandable tape to split the workpiece and the member along the splitting origin;
The method for processing a workpiece according to claim 1, characterized by comprising: 該部材は、ＤＡＦまたはメタル膜であることを特徴とする、請求項１または請求項２に記載の被加工物の加工方法。 3. The method of processing a workpiece according to claim 1, wherein said member is a DAF or a metal film. 該分割起点形成ステップでは、該レーザー光線の被加工物の表面におけるスポット形状を、長軸が被加工物の加工送り方向と平行な楕円形に形成する事を特徴とする請求項１に記載の被加工物の加工方法。2. The workpiece according to claim 1, wherein, in said division starting point forming step, the shape of the spot of said laser beam on the surface of said workpiece is formed into an elliptical shape whose long axis is parallel to the processing feed direction of said workpiece. Processing method of workpieces.
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